200839359 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種光電元件；特別是有關於一種可撓 式光電元件。 【先前技術】 現今許多電子產品都配備有顯示裝置，做為與使用者 溝通的媒介。例如，個人數位助理(PersonalData Assistant) ， 通常會配備有液晶顯示裝置，以顯示資訊供使用者閱覽。 許多電子產品的資訊輸入裝置也配備有液晶顯示裝置，供 使用者輸入資料予該電子裝置。但現今電子產品的顯示裝 置仍屬較厚重的配備，例如液晶顯示裝置通常使用玻璃基 板，而相較於電子產品的其它部件仍較為厚重。再者，由 於傳統液晶顯示裝置使用硬質、易脆基板，其受到外力撞 擊之後容易損壞，甚而影響電子產品的操作功能。例如使 用者手持個人數位助理時，往往容易不慎掉落在地上，其 衝撞力容易造成液晶顯示裝置的損壞，而使得個人數位^ Γ 理的操作功能受到不利影響。因此，基於上述傳統液晶顯 示衣置之缺失以及因應電子產品朝輕薄、易收納與產品設 計靈活性之要求，顯示裝置之基板已由傳統玻璃基板朝向 可撓式基板發展。 美國專利公開申清案弟US20020180344號「可撓式電 子裝置」提供一種具有可撓式顯示面板之可撓式電子裝 置，參第一圖，係該可撓式電子裝置之部份透視示意圖。 該可撓式電子裝置100係包括一可撓式顯示面板13〇、一 可撓式電路基板133及一電源端138，該可撓式顯示面板 130及可撓式電路基板133各為一獨立單元，其係在該可 5 200839359 撓式顯示面板130獨立製作完成後，再用異向性勝材與兮 可撓式電路基板133黏結。該可撓式電子裝置1(^係^字^ 可撓式顯示面板130、該可撓式電路基板133及電源端13$ 为開成為各自獨立的構件’此種設計使得該可挽式電子裝 置100的厚度τ無法減少，使其仍無法滿足電子產品朝輕 薄短小的需求。再者，由於前述可撓式顯示面板13〇、可 撓式電路基板133及電源端138係獨立製作完成之後，再 組裝在一起，並不利於該可撓式電子裝置1〇〇之快速量產 【發明内容】 ^本發明提供一種可撓式光電元件，係利用特定結構設 計將顯示元件直接製作在一可撓式電路基板上，並以光電 調交介質做為該顯示元件的顯示媒介，以使該可撓式光電 元件的設計更具彈性。 本發明之可撓式光電元件係包括一可撓式電路基 ^三複數條平行排列的第一電極導線、一第一微結構層、 第一光電調變介質及複數條平行排列的第二電極導 该可撓式電路基板係具一第一表面及一第二表面，及 =等第一電極導線係形成於該可撓式電路基板之該第一 2面上，其中每一該第一電極導線具有一厚度T。該第一 =結構層係形成於前述第一電極導線線距之間，該第一微 :構層具有-最大垂直高度Η。該第一光電調變介質係形 於該第一微結構層中，該第一光電調變介質具有一厚度 ’其，第-電極，線之厚度τ、該第—微結構層之最 垂直南度Η及該第-光電調變介質之厚度D符合關係式 H_TgD。該等第二電極導線係與該等第—電極導線呈 200839359 垂直堆疊關係而形成於該第一微結構層之對向，其中該第 一光電調變介質係夾持於每一該第一電極導線與每一該 第二電極導線重疊區域之該第一微結構層中並定義一 素單元。 本發明係利用前述微結構層形成在該可撓式電路基 板上，並將該光電調變介質形成在該微結構層以將^ 示元件直接製作在該可撓式電路基板上。再者，可依需求 選擇適合的光電調變介質材料，使本發明之可撓式光電元 件設計更為彈性化。 70 另一方面，本發明光電元件可使用雙面可撓式電路基 板:而在該雙面可撓式電路基板的兩面分別形成一前述顯 不兀件，使該光電元件成為一可雙面顯示相同或不同晝面 之可挽式顯示裝置。 本發明可撓式光電元件使用可撓式電路基板，係可與 捲繞(R2R，R〇ll-t〇-R〇ll)連續式製程相容，而有利於該可繞 式光電元件之快速大量生產。 【實施方式】 本發明提供-種可撓式光電元件，尤指一種可挽式顯 不兀件，藉由以下具體實施例配合所附圖式，將予以詳細 說明本發明可撓式光電元件之實施態樣。 第二圖係本發明可撓式光電元件之第一具體實施之 結構截，示意圖，第二A圖係第二圖的部份放大圖。參第 二圖及第二A® H具體實施例巾，本發明之可撓式 光件20係包括一可撓式電路基板21、複數條平行排 列的，一電極導線22、一微結構層23、一光電調變介質 24、複數條平行排列的第二電極導線乃及一保護膜％。 200839359 該可撓式電路基板21具有一第一表面211及一第二表面 212,該等第一電極導線22係形成於該可撓式電路基板21 之該第一表面211上，其中每一該第一電極導線22具有一 厚度T。該微結構層23係形成於前述第一電極導線22線 距之間，並且該微結構層23具有一最大垂直高度H。該光 電調變；I貝24係形成於該微結構層23間，該光電調變介 質24具有一厚度D，其中該第一電極導線22之厚度τ、 該微結構層23之最大垂直高度H及該光電調變介質以之 厚度D付合關係式（丨）：h-T^D。該等第二電極導線25係 與該等第-電極導線22呈垂直堆疊關係而形成於該微結 ，層23之對向，其中該光電調變介質24係夾持於每一該 第一電極導線22與每一該第二電極導線25重疊區域之該 微結構ϋ3中並且定* —像素單元。前述保護膜26係形 成於該等第二電料線25之—側，崎護前述之各層結 構。再者，該保護膜26亦可以一可撓式基板代替，來伴 護前述之各層結構。 在第一具體實施例中，該可撓式電路基板21可以是一 可撓式印刷電路板，並可直接應㈣膜上晶片（chip⑽ Film)技術-將該可撓式光電元件2〇之驅動電路晶片π及 主、被動兀件28、29言史置在該可撓式電路基板21的第一 表面211上’使該可撓式電路基板21本身即可做為前述可 之轉電路板。或者，該可撓式電路基板 -么插槽(未示出），以電性連結前述可撓式光電 多層結構，而可賴料—電極^ ^ 相關電路佈局形成於該多層結構巾，關應可撓式光電產 品之设计與使用需求。前述第一電極導線22及前述第二電 8 200839359 =25可以是異向性導電材料’並且可在 V線22面向該光電調變介f 24之表面經表 =極 表面成為反光表面、部份反光/部份吸光表面或1 該 件20顯不晝面之需求。 70 ，微:吉構層23可以是一封閉型結構或 構。弟四Α圖、第四Β圖及第四（：圖係顯示出前述第—: 極V線22與該微結構層23的上視示意圖，其中第四a = 及第四B圖顯示出該微結構層23具有一封閉型垆構，= ，四C圖顯示出該微結構層23具有—非封閉型結構。如 第四A圖所示’該微結構層23可具有複數個平行排列 狀兀件23,如第四b圖所示，該微結構層23係可呈—格 狀結構，而如第四C圖所示，該微結構層23可以是呈^ 陣排^的複數間隔元件(spacer) 23。該微結構層23係用以 提供前述可撓式光電元件20之機械強度，若使用上述封閉 型微結構層，更可提供該光電調變介質24之像素分割之 用。 該光電調變介質24係指一種在電場作用下會改變其 發光特性之材料，其可以是液晶、以液晶為主要成份之^ 合物、電致發光材料(electro-light emitting medium)、電致 變色材料（electrochromic medium)或電控潤濕材料 (electrowetting medium)。若該光電調變介質24為液晶或 以液晶為主要成份之混合物，則可進一步搭配配向膜、偏 光膜、各式補償膜的設計，以製作出各種不同模式的可撓 式顯示器。例如，該第一光電調變介質24係為液晶或以 液晶為主要成份之混合物時，可在該第一電極導線22面 向該第一光電調變介質24之表面以塗佈方式形成一第一 200839359 偏光膜（未示出），而該第一偏光膜係使該可撓式液晶光電 兀件產生所需之光學特性。又例如，該第一光電調變介質 24係為液晶或以液晶為主要成份之混合物時，可在該第一 電極導線22面向該第一光電調變介質以之表面以塗佈方 式形成一第一光學補償膜（未示出），而該第一光學補償膜 係使該可撓式液晶光電元件產生所需之光學特性。 除此之外，本發明亦可使用印刷方法(printing)將偏光 膜或光學補償膜形成在該等第一電極導線22面向該第一 光電調變介質24之表面上。或者本發明可將偏光膜或光 學補傾膜分別貼附在該保護膜26外側及該可撓式電路基 板21的下表面。 第二圖係本發明可撓式光電元件之第二具體實施之 結構截面示意圖。在第二具體實施例中，該可撓光 件30係制-雙面可撓式電路基板3卜並在該雙面可挽 式龟路基板31之一弟一表面311及一第二表面μ]分別形 成一可撓式顯示元件，以使該可撓式光電元件成為一 可雙面顯示相同或不同晝面之可撓式顯示裝置。該可撓式 光電，件30除了使用該雙面可撓式電路基板31外，^包 括··複數條平行排列的第一電極導線32a，係形成於該雙 面可撓式電路基板31之該第一表面311上，其中每一該第 一電極導線32a具有一厚度T; 一第一微結/構層33&了係 形成於前述第一電極導線32&線距之間，該第一微結構層 具有一农大垂直高度Η; —第一光電調變介質34a，係 形成於該第一微結構層33a中，該第一光電調變介質34a 具有一厚度D，其中該第一電極導線32a之厚度τ、、該第 一微結構層33&之最大垂直高度Η及該第—光電調變^質 34a之厚度D符合關係式（1):H-TgD;複數條平行排列的 200839359 巧‘線35a，係與該等第一電極導線32a呈垂直堆 璺關係而形成於該第一微結構層33a之對向，其中該第一 2二ί，二質34&係失持於每一該第一電極導線32a與每 、，==—兒極導線35a重疊區域之該第一微結構層33a中 亚像素單元；―第—保制36a，係形成於該等第 “ β V線35a之一侧，以保護前述之各層結構；複數條 第三電極導線奶，係形成於該雙面可 綠1之該第二表面312上，其中每一該第三電極導 ί有一厚度Τ; 一第二微結構層33b，係形成於前 二卷極，線321)線距之間，該第二微結構層3%具有 二，，垂直高度H;—第二光電調變介質m，係形成於 ，弟二微結構層33b中，該第二光電調變介質34b具有一 厚度D其中該第三電極導線32b之厚度T、該第二微結 才?1層33^之彔大垂直高度^^及該第二光電調變介質34b之 厚度D符合前述關係式（1)H-T2D;複數條平行排列的第 四私極導線35b，係與該等第三電極導線32b呈垂直堆疊 關係=形成於該第二微結構層33b之對向，其中該第二光 包，、欠介質34b係夾持於每一該第三電極導線32b與每一 ，第四電極導線35b重疊區域之該第二微結構層33b中並 定義:像素單元·，及一第二保護膜36b係形成於該等第四 電極導線~35b之一侧，以保護形成於該雙面可撓式電路基 ，31,第一表面312的可撓式顯示元件各層結構。前述 第一保護膜36a及第二保護膜36b皆可利用一可撓式基板 代替。 如同第一具體實施例，在該第二具體實施例中，該雙 面可挽，電路基板31可以是一可撓式印刷電路板，並可直 接應用薄膜上晶片（Chip on Film)技術，將該雙面可撓式電 11 200839359 路基板3i之第-表面311與第二表面312上個別的顯示元 件的驅動電路晶片37a、37b及主、被動元件38a38b、39a 及39b分別設置在該雙面可撓式電路基板31之第一表面 311與第二表面312上，使該雙面可撓式電路基板31 ；^身 即可做為前述個別顯示元件之驅動電路板。或者，該雙面 可撓式電路基板31之第一表面311及第二表面312上$分 別設有一插槽（未示出），以電性連結前述個別顯示元件之 一驅動電路板(未示出）。另外，該雙面可撓式電路基板31 广 可以是一雙面多層結構，而可將該等第一電極導線32&及 相關電路佈局以及該等第三電極導線32b與相關電路佈局 形成於該雙面多層結構中，以因應可撓式光電產品之設計 與使用需求。該等第一電極導線32a及該等第三電極導線 32b分別面向該第一光電調變介質34a及該第二光電調變 介質34b之表面經表面處理，使該表面成為反光表面、部 伤反光/部份吸光表面或吸光表面，以搭配不同光電調變介 質之光電特性及前述個別顯示元件顯示晝面之需求。 此外，在第二具體實施例中，其第一微結構層33a及 % 第二微結構層33b的實施態樣係相同於第一具體實施例的 該微結構層23的實施態樣；第二具體實施例的第一光電 調變介質34a及第二光電調變介質34b的實施態樣亦相同 於第一具體實施例該光電調變介質24之實施態樣。再者， 該第一光電調變介質34a與該第二光電調變介質34b可為 相同或不同之介質材料。當該第一光電調變介質34a與該 第二光電調變介質34b係為液晶或以液晶為主要成份之混 合物時，可在該第一電極導線32a面向該第一光電調變介 質34a之表面及在該第三電極導線32b面向該第二光電調 變介質34b之表面以塗佈方式分別形成一第一偏光膜（未 12 200839359 示出)，而該第一偏光膜及該第二 偏先膜係使該可撓式液晶光電元件產生 性。又例如當該第-光電調變介質34a與該第二光電y 係為液晶或以液晶為主要成份之混合物時，可： 该弟-，極導線32a面向該第—光電調變介質34a之 及在該第三電極導線32b面向該第二光電調變介質^之 ί面式分別形成—第-光學補償膜(未示出)及- 未不出)、’而該第-光學補償膜及該第二 =補<貞膜係使該可換式液晶光電元件產生所需之光學 除此之外，本發明亦可使用印刷方法(printing)將偏光 膜或光學補舰形成在鱗[電極導線32a面向該第一 光電調變介質34a之表面上及該等第三電極導線似 該弟二光電調變介質34b之表面上。 膜或光學補償膜分別貼附在該第―保護膜恤及該第^ 護膜36b外側。 、據上，本發明係可將可撓式顯示元件直接製作在一可 撓式電路基板上，並且薄膜上晶片技術 將=可撓式顯示元件的驅動電路晶片直接設置在該可挽 式，路基板上，使该可撓式電路基板本身即成為該可撓式 顯示元件的驅動電路板。再者，本發明使用的可撓式電路 基板係可與捲繞(R2R，R〇ll-t〇-R〇ll)連續製程相容，而有利 於快速大量生產本發明之可撓式光電元件。此外，本發明 可撓式光電元件可採用各種不同的光電調變介質，以達到 各種不同顯示需求’而使本發明可撓式光電元件的設計 具有彈性。 以上所述僅為本發明之具體實施例而已，並非用以限 13 200839359 定本發明之申請專利範圍；凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾，均應包含在下述之申請 專利範圍内。 14 200839359 【圖式簡單說明】 第一圖係一傳統可撓式電子裝置之部份結構透視示 意圖， 第二圖係本發明可撓式光電元件之第一具體實施例 之截面示意圖； 第二A圖係第二圖之部份放大示意圖； 第三圖係本發明可撓式光電元件之第二具體實施例 之截面示意圖；及 第四A圖至第四C圖係本發明第一電極導線與微結 構層之各種變化例的上視示意圖，其中第四A圖及第四B 圖係顯示該微結構層具有封閉型結構，而第四C圖係顯 示該微結構層具有非封閉型結構。 【主要元件符號對照說明】 100-…可撓式電子裝置 130—可挽式顯不面板 133—可挽式電路基板 138 —電源端 2〇、30-…可撓式光電元件21-…可撓式電路基板 22——第一電極導線 23-…微結構層 24——光電調變介質 25第二電極導線 26…-保護膜 27、 37a、37b—驅動電路晶片 28、 38a、38b-…主動元件 29、 39a、39b…-被動元件 211、311…-第一表面 212、312_…第二表面 31-…雙面可撓式電路基板 15 200839359 ^…第三電極導線 第二微結構層 35b-…第四電極導線 36b-…第二保護膜 32a—弟一電極導線 33a-—第一微結構層 34a-…第一光電調變介質 34b_—第二光電調變介質 35a—弟二電極導線 36a—第一保護膜 \ 16BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photovoltaic element; and more particularly to a flexible photovoltaic element. [Prior Art] Many electronic products today are equipped with display devices as a medium for communication with users. For example, the Personal Data Assistant is usually equipped with a liquid crystal display to display information for the user to view. Many electronic product information input devices are also equipped with liquid crystal display devices for the user to input data to the electronic device. However, the display devices of electronic products today are still relatively heavy. For example, liquid crystal display devices usually use a glass substrate, which is still relatively thick compared to other components of the electronic product. Furthermore, since the conventional liquid crystal display device uses a hard and fragile substrate, it is easily damaged by an external force, and even affects the operational function of the electronic product. For example, when a user holds a personal digital assistant, it is often easy to accidentally fall to the ground, and the collision force easily causes damage to the liquid crystal display device, and the operation function of the personal digital device is adversely affected. Therefore, based on the above-mentioned lack of conventional liquid crystal display clothing and the requirement for electronic products to be thin, easy to store and flexible in product design, the substrate of the display device has been developed from a conventional glass substrate toward a flexible substrate. U.S. Patent Application Serial No. US20020180344, "Flexible Electronic Device", provides a flexible electronic device having a flexible display panel, as shown in the first figure, which is a partial perspective view of the flexible electronic device. The flexible electronic device 100 includes a flexible display panel 13A, a flexible circuit substrate 133, and a power terminal 138. The flexible display panel 130 and the flexible circuit substrate 133 are each a separate unit. After the flexible display panel 130 is independently fabricated, the anisotropic material is bonded to the flexible circuit board 133. The flexible electronic device 1 (the flexible display panel 130, the flexible circuit substrate 133, and the power supply terminal 13$ are opened as separate components'). The design makes the portable electronic device The thickness τ of 100 cannot be reduced, so that it still cannot meet the requirements of lightness, thinness and shortness of the electronic product. Furthermore, since the flexible display panel 13〇, the flexible circuit substrate 133 and the power supply terminal 138 are independently manufactured, The invention is not advantageous for the rapid mass production of the flexible electronic device. [Invention] The present invention provides a flexible photoelectric element which is directly fabricated into a flexible type by using a specific structural design. On the circuit substrate, a photoelectric matching medium is used as a display medium of the display element, so that the design of the flexible photoelectric element is more flexible. The flexible photoelectric element of the present invention comprises a flexible circuit base. a plurality of first electrode wires arranged in parallel, a first microstructure layer, a first photoelectric modulation medium, and a plurality of second electrodes arranged in parallel to guide the flexible circuit substrate to have a first surface a second surface, and a first electrode lead is formed on the first surface of the flexible circuit substrate, wherein each of the first electrode wires has a thickness T. The first = structural layer is formed Between the first electrode wire pitches, the first micro-structure layer has a maximum vertical height Η. The first photoelectric modulation medium is shaped in the first microstructure layer, and the first photoelectric modulation medium Having a thickness 'its, the first electrode, the thickness τ of the line, the most vertical southness 该 of the first microstructure layer, and the thickness D of the first photoelectric conversion medium conform to the relationship H_TgD. The second electrode wire is Formed in the vertical stacking relationship of the first and second electrode wires in a vertical stacking relationship of 200839359, wherein the first photoelectric modulation medium is sandwiched between each of the first electrode wires and each of the second electrodes Forming a unit cell in the first microstructure layer of the electrode lead overlapping region. The present invention uses the foregoing microstructure layer to be formed on the flexible circuit substrate, and the photoelectric modulation medium is formed on the microstructure layer Make the component directly in the flexible Further, a suitable photoelectric modulation dielectric material can be selected according to requirements, so that the flexible photoelectric element design of the present invention is more elastic. 70 On the other hand, the photovoltaic element of the invention can use double-sided flexible type a circuit board: a display element is formed on each of the two sides of the double-sided flexible circuit board, so that the photoelectric element becomes a portable display device capable of displaying the same or different sides on both sides. The photoelectric element uses a flexible circuit substrate, which is compatible with the winding (R2R, R〇ll-t〇-R〇ll) continuous process, and is advantageous for rapid mass production of the wrapable photovoltaic element. MODE FOR CARRYING OUT THE INVENTION The present invention provides a flexible photoelectric element, in particular, a portable display element, and the implementation of the flexible photoelectric element of the present invention will be described in detail by the following specific embodiments in conjunction with the accompanying drawings. Aspect. The second drawing is a cross-sectional view of a first embodiment of the flexible photoelectric element of the present invention, and a second partial view is a partial enlarged view of the second drawing. Referring to the second embodiment and the second A® H embodiment, the flexible optical device 20 of the present invention comprises a flexible circuit substrate 21, a plurality of parallel arrays, an electrode lead 22, and a microstructure layer 23. , a photoelectric modulation medium 24, a plurality of second electrode wires arranged in parallel, and a protective film %. The first circuit surface 22 is formed on the first surface 211 of the flexible circuit substrate 21, and each of the first electrode wires 22 is formed on the first surface 211 of the flexible circuit substrate 21. The first electrode lead 22 has a thickness T. The microstructure layer 23 is formed between the aforementioned first electrode wires 22 and the microstructure layer 23 has a maximum vertical height H. The photoelectric modulation medium is formed between the microstructure layer 23, and the photoelectric modulation medium 24 has a thickness D, wherein the thickness τ of the first electrode wire 22 and the maximum vertical height H of the microstructure layer 23 And the photoelectric modulation medium is subjected to a relationship of thickness D (丨): hT^D. The second electrode wires 25 are formed in a vertically stacked relationship with the first electrode wires 22 in the micro-junction, opposite to the layer 23, wherein the photoelectric modulation medium 24 is clamped to each of the first electrodes. The wire 22 overlaps the microstructure of the second electrode wire 25 in the microstructure ϋ3 and defines a pixel unit. The protective film 26 is formed on the side of the second electric wires 25 to saturate the above-mentioned respective layer structures. Furthermore, the protective film 26 can also be replaced by a flexible substrate to support the various layer structures described above. In the first embodiment, the flexible circuit substrate 21 can be a flexible printed circuit board, and can be directly driven by the (meth) chip (10) Film technology. The circuit chip π and the main and passive components 28, 29 are placed on the first surface 211 of the flexible circuit substrate 21 to make the flexible circuit substrate 21 itself a front-end circuit board. Alternatively, the flexible circuit substrate slot (not shown) electrically connects the flexible optical multi-layer structure, and the circuit-electrode-related circuit layout is formed on the multi-layer structure towel. Design and use requirements for flexible optoelectronic products. The first electrode lead 22 and the second electric 8200839359=25 may be an anisotropic conductive material' and may be a reflective surface or a part of the surface of the V-line 22 facing the photoelectric modulation device f 24 via the surface of the surface. Reflective/partially absorbing surface or 1 This piece 20 is not required. 70, micro: the gem layer 23 can be a closed structure or structure. a fourth diagram, a fourth diagram, and a fourth (the diagram shows the foregoing -: a top view of the pole V line 22 and the microstructure layer 23, wherein the fourth a = and the fourth B diagram show the The microstructure layer 23 has a closed structure, and the Fig. 4C shows that the microstructure layer 23 has a non-closed structure. As shown in Fig. 4A, the microstructure layer 23 may have a plurality of parallel arrays. The element 23, as shown in the fourth b, may have a lattice structure, and as shown in FIG. 4C, the microstructure layer 23 may be a plurality of spacer elements arranged in a matrix. (spacer) 23. The microstructure layer 23 is for providing the mechanical strength of the flexible photovoltaic element 20, and if the closed microstructure layer is used, the pixel division of the photoelectric modulation medium 24 can be further provided. The photoelectric modulation medium 24 refers to a material which changes its luminescent property under the action of an electric field, and may be a liquid crystal, a compound containing a liquid crystal as a main component, an electro-light emitting medium, or an electrochromic material. Electrochromic medium or electrowetting medium. If the light The electrically variable medium 24 is a mixture of liquid crystal or liquid crystal as a main component, and can be further matched with an alignment film, a polarizing film, and various compensation film designs to produce flexible displays of various modes. For example, the first When the photoelectric modulation medium 24 is a mixture of liquid crystal or liquid crystal as a main component, a first 200839359 polarizing film may be formed on the surface of the first electrode wire 22 facing the first photoelectric modulation medium 24 by coating. The first polarizing film is used to produce the desired optical characteristics of the flexible liquid crystal photoelectric element. For example, when the first photoelectric modulation medium 24 is a mixture of liquid crystal or liquid crystal as a main component. a first optical compensation film (not shown) may be formed on the surface of the first electrode lead 22 facing the first photoelectric modulation medium by coating, and the first optical compensation film may be the flexible The liquid crystal photovoltaic element produces desired optical characteristics. In addition, the present invention may also use a printing method to form a polarizing film or an optical compensation film on the first electrode wires 22 facing the first light. Alternatively, the polarizing film or the optical supplemental film may be attached to the outside of the protective film 26 and the lower surface of the flexible circuit substrate 21. The second figure is flexible in the present invention. A schematic cross-sectional view of a second embodiment of the photovoltaic element. In the second embodiment, the flexible member 30 is a double-sided flexible circuit substrate 3 and is disposed on the double-sided movable path substrate 31. One of the surface 311 and the second surface μ] respectively form a flexible display element, so that the flexible photoelectric element becomes a flexible display device capable of displaying the same or different sides on both sides. The flexible photoelectric device 30 includes, in addition to the double-sided flexible circuit substrate 31, a plurality of first electrode wires 32a arranged in parallel, which are formed on the double-sided flexible circuit substrate 31. On the surface 311, each of the first electrode wires 32a has a thickness T; a first microjunction/layer 33& is formed between the first electrode wires 32 & line spacing, the first microstructure layer Having a vertical height Η of the agricultural university; - the first photoelectric modulation medium 34a Formed in the first microstructure layer 33a, the first photoelectric modulation medium 34a has a thickness D, wherein the thickness τ of the first electrode wire 32a, and the maximum vertical height of the first microstructure layer 33& The thickness D of the first photo-electrical modulation material 34a conforms to the relationship (1): H-TgD; a plurality of parallel parallel lines of 200839359 巧 'line 35a are vertically stacked with the first electrode wires 32a. And formed in the opposite direction of the first microstructure layer 33a, wherein the first 2, 2, 34 & is lost in each of the first electrode wires 32a and overlaps with each of the ==-child wires 35a a sub-pixel unit in the first microstructure layer 33a of the region; a first-preservation 36a formed on one side of the "beta V line 35a" to protect the foregoing layer structure; a plurality of third electrode wire milk Formed on the second surface 312 of the double-sided green 1, wherein each of the third electrodes has a thickness Τ; a second microstructure layer 33b is formed on the first two windings, line 321) Between the line spacings, the second microstructure layer has 3%, and the vertical height H; - the second photoelectric modulation medium m, the shape In the second microstructure layer 33b, the second photoelectric modulation medium 34b has a thickness D, wherein the thickness T of the third electrode lead 32b, the second micro-junction, and the vertical vertical height of the first layer 33^^ And the thickness D of the second photoelectric modulation medium 34b conforms to the above relation (1) H-T2D; the plurality of fourth private pole wires 35b arranged in parallel are vertically stacked with the third electrode wires 32b. Formed in the opposite direction of the second microstructure layer 33b, wherein the second optical package, the underlying medium 34b is sandwiched between each of the third electrode leads 32b and the fourth electrode lead 35b. The second microstructure layer 33b is defined as: a pixel unit·, and a second protection film 36b is formed on one side of the fourth electrode wires ～35b to protect the double-sided flexible circuit substrate, 31, The flexible display elements of the first surface 312 are in various layer configurations. The first protective film 36a and the second protective film 36b may be replaced by a flexible substrate. As in the first embodiment, in the second embodiment, the double-sided removable, the circuit substrate 31 can be a flexible printed circuit board, and can directly apply chip on film technology, The double-sided flexible circuit 11 200839359 is provided on the first surface 311 of the road substrate 3i and the drive circuit chips 37a and 37b of the individual display elements on the second surface 312 and the main and passive components 38a38b, 39a and 39b, respectively. The first surface 311 and the second surface 312 of the flexible circuit substrate 31 are such that the double-sided flexible circuit substrate 31 can be used as the driving circuit board of the individual display elements. Alternatively, the first surface 311 and the second surface 312 of the double-sided flexible circuit substrate 31 are respectively provided with a slot (not shown) for electrically connecting one of the individual display elements to the driving circuit board (not shown). Out). In addition, the double-sided flexible circuit substrate 31 can be a double-sided multi-layer structure, and the first electrode wires 32& and related circuit layouts and the third electrode wires 32b and related circuit layouts can be formed thereon. In the double-sided multi-layer structure, in response to the design and use requirements of flexible optoelectronic products. The first electrode lead 32a and the third electrode lead 32b are surface-treated on the surfaces of the first photoelectric modulation medium 34a and the second photoelectric modulation medium 34b, respectively, so that the surface becomes a reflective surface and the surface is damaged. / Partially absorbing surface or light absorbing surface to match the photoelectric characteristics of different photoelectric modulation media and the above-mentioned individual display components to display the surface requirements. In addition, in the second embodiment, the first microstructure layer 33a and the second second microstructure layer 33b are identical to the implementation of the microstructure layer 23 of the first embodiment; Embodiments of the first photoelectric modulation medium 34a and the second photoelectric modulation medium 34b of the specific embodiment are also the same as the embodiment of the photoelectric modulation medium 24 of the first embodiment. Furthermore, the first photoelectric modulation medium 34a and the second photoelectric modulation medium 34b may be the same or different dielectric materials. When the first photoelectric modulation medium 34a and the second photoelectric modulation medium 34b are liquid crystal or a mixture of liquid crystals as a main component, the first electrode lead 32a may face the surface of the first photoelectric modulation medium 34a. And forming a first polarizing film (not shown in FIG. 12 200839359) on the surface of the third electrode lead 32b facing the second photoelectric modulation medium 34b, and the first polarizing film and the second first The film system makes the flexible liquid crystal cell produce. For example, when the first photoelectric conversion medium 34a and the second photoelectric y are liquid crystal or a mixture of liquid crystals as a main component, the second electrode 32a faces the first photoelectric modulation medium 34a. Forming a first-optical compensation film (not shown) and - not present, respectively, in the third electrode lead 32b facing the second photoelectric modulation medium, and the first optical compensation film and the The second = complement < 贞 film system enables the replaceable liquid crystal photovoltaic element to produce the required optics. In addition, the present invention can also use a printing method to form a polarizing film or an optical compensation ship in a scale [electrode wire 32a faces the surface of the first photoelectric modulation medium 34a and the third electrode wires are on the surface of the photoelectric modulation medium 34b. A film or an optical compensation film is attached to the outside of the first protective film shirt and the second protective film 36b. According to the present invention, the flexible display element can be directly fabricated on a flexible circuit substrate, and the wafer-on-film technology directly sets the driving circuit chip of the flexible display element on the movable path. The flexible circuit board itself is used as a drive circuit board of the flexible display element on the substrate. Furthermore, the flexible circuit substrate used in the present invention is compatible with the winding (R2R, R〇ll-t〇-R〇ll) continuous process, and is advantageous for rapid mass production of the flexible photovoltaic device of the present invention. . In addition, the flexible optoelectronic component of the present invention can utilize a variety of different optoelectronic modulation media to achieve a variety of different display requirements' to provide flexibility in the design of the flexible optoelectronic component of the present invention. The above is only the specific embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. All other equivalent changes or modifications which are not departing from the spirit of the present invention should be included. Within the scope of the patent application. 14 200839359 [Simple description of the drawings] The first figure is a schematic perspective view of a part of a conventional flexible electronic device, and the second figure is a schematic cross-sectional view of the first embodiment of the flexible photoelectric element of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic cross-sectional view showing a second embodiment of a flexible photovoltaic element of the present invention; and FIGS. 4A to 4C are first electrode leads of the present invention and A top view of various variations of the microstructure layer, wherein the fourth A and fourth B diagrams show that the microstructure layer has a closed structure, and the fourth C map shows that the microstructure layer has a non-closed structure. [Main component symbol comparison description] 100-...flexible electronic device 130-pullable display panel 133-pullable circuit substrate 138-power supply terminal 2〇, 30-...flexible photovoltaic element 21-...flexible Circuit board 22 - first electrode lead 23 - ... microstructure layer 24 - photoelectric modulation medium 25 second electrode lead 26 ... - protective film 27, 37a, 37b - drive circuit wafer 28, 38a, 38b - ... active Element 29, 39a, 39b...-passive element 211, 311...-first surface 212, 312_... second surface 31-... double-sided flexible circuit substrate 15 200839359 ^...third electrode lead second microstructure layer 35b- ...the fourth electrode lead 36b-...the second protective film 32a-the first electrode lead 33a-the first microstructure layer 34a-...the first photoelectric modulation medium 34b_the second photoelectric modulation medium 35a-the second electrode lead 36a —First protective film \ 16