TW200813267A - Crystallization furnace - Google Patents
Crystallization furnace Download PDFInfo
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- TW200813267A TW200813267A TW096122678A TW96122678A TW200813267A TW 200813267 A TW200813267 A TW 200813267A TW 096122678 A TW096122678 A TW 096122678A TW 96122678 A TW96122678 A TW 96122678A TW 200813267 A TW200813267 A TW 200813267A
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- electromagnetic
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- crucible
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- 238000002425 crystallisation Methods 0.000 title claims abstract description 15
- 230000008025 crystallization Effects 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000003756 stirring Methods 0.000 claims abstract description 14
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 8
- 238000007599 discharging Methods 0.000 claims abstract 3
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 4
- 206010029412 Nightmare Diseases 0.000 claims 1
- 206010036790 Productive cough Diseases 0.000 claims 1
- 241000221035 Santalaceae Species 0.000 claims 1
- 235000008632 Santalum album Nutrition 0.000 claims 1
- 210000003802 sputum Anatomy 0.000 claims 1
- 208000024794 sputum Diseases 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 8
- 238000013019 agitation Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 210000003298 dental enamel Anatomy 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012821 model calculation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Furnace Details (AREA)
Abstract
Description
200813267 九、發明說明: 【發明所屬之技術領域】 本發明有關一種用於矽之結晶化的熔爐。 【先前技術】200813267 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a furnace for crystallization of ruthenium. [Prior Art]
用於光電池(photovoltaic cell)之最常見的基板材料 係多結晶矽。在工業上,此種材料一般藉著各種相關技術 以方向性凝固(DS)在結晶化熔爐之中製造。DS的一種變型 敛述於例如是美國專利申請案第2〇〇7/〇〇447〇7_Ai號中。 在習知技術中,熔爐的加熱器通常係由三相交流電供 給電力。此交流電亦建立起攪拌作用力,此攪拌作用力的 大小至少相似於由熔爐中之溫度差異所產生的熱浮力。此 攪拌作用力會造成溶化物的循環,其改善了離開結晶體之 雜質的凝析及降低了在石夕熔化物中的溫度梯度。然而,擾 拌作用力係取決於溶爐的加熱功率。 【發明内容】 本發明之目的係提供一種炫爐,而可以改善由溶爐所 產生的矽的品質。另一目的係改善矽之結晶化的控制。 本發明係揭示在申請專利範圍第1項中。本發明進一 步特徵則揭示於申請專利範圍附屬項中。 【實施方式】 現在參考圖1及圖2。 溶爐包含一上殼體 去,用於負載及卸載。 生真空緊密。 1及一下殼體10。該上殼體能被移 關閉的熔爐係藉著一密封件8而產 5 200813267 該熔爐更包含坩堝4,用於容納用於結晶化的原料。 該原料可例如是藉著該西門子製程或類似製程所產生的 矽。該原料係在結晶化製程開始之前被放置在坩堝之中。 圖1及圖2中係顯示一層固體矽6及一層熔化矽5。 該熔爐更包含用於加熱坩堝4的加熱裝置3,藉此置 ’、;斗熔化加熱裝置可譬如被設置成一個或數個接近掛 尚的加熱元件。加熱裝置3可例如是基於電加熱元件, 例^以直流t《單相《三相$力電來供電。加熱裝置可例 如疋基於傳統式加熱元件或感應式加熱元件。 熔爐可以例如包含用於坩堝之隔熱的隔熱裝置2。在 圖1中,所顯示的是隔熱裝置2係包圍加熱裝置3且亦包 圍坩堝4。此外,熔爐可以例如包含一下絕緣裝置12,該 下、、巴緣I置具有一用於導引件13的開口。 熔爐更包含一排熱裝置,用於在結晶化期間從坩堝排 出熱里。排熱裝置有數種替代實例。在一實例中,絕緣裝 置12犯移動,例如向下移動,用以增加離開坩堝的熱傳 士或者’在一些實例中有可能的是例如藉著一導引件13 相對於加熱裝置3降低堆堝支撐件1 ^及坩堝4。也有可能 的疋在冷部期間減少到達加熱裝置3的電力。另一種可能 的解决方案是藉著冷卻氣體的循環主動地移除熱量,如於 世界專利申請案第w〇2〇〇6/〇82〇85號中所揭示者。 再者’溶爐包含一氣體入口 7及一氣體出口 9,以於 、、盧中提仪^性的大氣,如熟習此項技術的人士將會獲知 者本文所使用的用詞“惰性之大氣,,係意指與熔爐中的 6 200813267 材料及熱區中的砍金屬相接觸的大氣’該大氣本質上對於 熔爐之材料、及於固體及液體狀態二者中之矽金屬相來說 在化學上是惰性的。本文所使用之用詞包含惰性大氣的任 何氣體壓力,包括真空。The most common substrate material used in photovoltaic cells is polycrystalline germanium. Industrially, such materials are generally produced in a crystallization furnace by directional solidification (DS) by various related techniques. A variant of DS is described, for example, in U.S. Patent Application Serial No. 2/7/447/7-Ai. In the prior art, the heater of the furnace is usually supplied with electric power from a three-phase alternating current. This alternating current also establishes a stirring force which is at least similar to the thermal buoyancy generated by the temperature difference in the furnace. This agitation force causes a cycle of the melt which improves the condensate of the impurities leaving the crystal and reduces the temperature gradient in the Shishi melt. However, the disturbance force depends on the heating power of the furnace. SUMMARY OF THE INVENTION An object of the present invention is to provide a bright furnace which can improve the quality of flaws produced by a furnace. Another object is to improve the control of crystallization of ruthenium. The present invention is disclosed in the first item of the patent application. Further features of the present invention are disclosed in the dependent claims. [Embodiment] Reference is now made to Figs. 1 and 2. The furnace contains an upper casing for loading and unloading. The vacuum is tight. 1 and the lower housing 10. The furnace in which the upper casing can be closed is produced by a seal 8 5 200813267 The furnace further comprises crucible 4 for containing the raw material for crystallization. The material can be, for example, produced by the Siemens process or the like. The material is placed in the crucible prior to the start of the crystallization process. In Fig. 1 and Fig. 2, a layer of solid crucible 6 and a layer of melting crucible 5 are shown. The furnace further comprises a heating device 3 for heating the crucible 4, whereby the bucket melting heating device can be arranged, for example, as one or several heating elements that are close to being attached. The heating device 3 can be, for example, based on an electric heating element, for example, powered by a direct current t "single phase "three phase $ power. The heating device can be, for example, based on a conventional heating element or an inductive heating element. The furnace may, for example, comprise a thermal insulation device 2 for the thermal insulation of the crucible. In Fig. 1, it is shown that the heat insulating device 2 surrounds the heating device 3 and also surrounds the weir 4. Furthermore, the furnace may, for example, comprise a lower insulating means 12, the lower edge of which has an opening for the guide member 13. The furnace further includes a row of heat devices for venting heat from the crucible during crystallization. There are several alternative examples of heat removal devices. In an example, the insulating device 12 is moved, for example, moved downward to increase the heat sergeant leaving the raft or 'in some instances it is possible to lower the stack relative to the heating device 3 by, for example, a guide 13埚 Supports 1 ^ and 坩埚 4. It is also possible that the electric power reaching the heating device 3 is reduced during the cold portion. Another possible solution is to actively remove heat by the circulation of the cooling gas, as disclosed in the World Patent Application No. WO 〇 2〇〇6/〇 82〇85. Furthermore, the 'solution furnace contains a gas inlet 7 and a gas outlet 9 for the atmosphere of the gas, and those skilled in the art will know the term "inert atmosphere" as used herein. , means the atmosphere in contact with the chopped metal in the 2008 200813267 material and hot zone in the furnace. 'The atmosphere is essentially chemical for the material of the furnace and the base metal phase in both solid and liquid states. It is inert. The term used herein includes any gas pressure of an inert atmosphere, including vacuum.
該熔爐更包含一攪拌裝置14。該攪拌裝置14包含一 個或數個以交流電供電之電磁裝置,用於將交流的電磁場 應用於坩堝4中的矽。該電磁裝置可例如包含線圈或其他 型式之導電軌條,其係適用於在供給交流電時提供充分之 交流電磁場。舉例來說,電磁裝置包含具有1 -50轉圈之線 圈。 該攪拌裝置係連接至一電源。該電源能夠例如是可控 制的電源,用於控制供給至線圈之交流電的頻率及/或振 幅。或者,該電源係以固定頻率及/或固定振幅的電流來 供給。 由交流電所提供的攪拌作用力能描述成羅倫茲 (Lorentz)作用力,其由以下公式提供··The furnace further comprises a stirring device 14. The agitation device 14 includes one or more electromagnetic devices that are powered by an alternating current for applying an alternating electromagnetic field to the crucible in the crucible 4. The electromagnetic device may, for example, comprise a coil or other type of conductive rail that is adapted to provide a sufficient alternating electromagnetic field when supplying alternating current. For example, an electromagnetic device includes a coil having a 1 to 50 revolution. The stirring device is connected to a power source. The power source can be, for example, a controllable power source for controlling the frequency and/or amplitude of the alternating current supplied to the coil. Alternatively, the power source is supplied at a fixed frequency and/or a fixed amplitude current. The agitation force provided by the alternating current can be described as the Lorentz force, which is provided by the following formula...
Re(Jx(B + Bs)) = -Re(JxB)+ Re(J)xBs) + -Re(JxB) v-v—-/ 2 v-v-Re(Jx(B + Bs)) = -Re(JxB)+ Re(J)xBs) + -Re(JxB) v-v--/ 2 v-v-
Lorentzy作用力Lorentzy force
Lorentz作用力的 靜態部份Static part of Lorentz's force
Lorentz作用力 具有頻率必之 與時間有關的部份Lorentz force has a frequency-dependent part of time
Lorentz作用力 具有頻率2必之 與時間有關的部份 羅倫茲作用力的理論係進一步敘述於教科書中,例如 P. A. Davidson在2001年劍橋大學出版社、應用數學中劍 橋教科書 “An Introduction to Magnetohydrodynamics” , 及R. Moreau在1990年之倫敦的Kluwer學院出版社之 7 200813267The theory of Lorentz's force with a frequency-dependent part of the time-dependent part of Lorentz's force is further described in textbooks such as PA Davidson's Cambridge textbook "An Introduction to Magnetohydrodynamics" in Cambridge University Press, 2001. , and R. Moreau at the Kluwer College Press in London in 1990 7 200813267
Magnetohydrodynam i c s ” 。 在本實例中,攪拌裝置14係放置在絕緣裝置2外側, 以保護攪拌裝置不遭受來自加熱裝置3之熱量。再者,有 可能的是將例如是水冷機構或類似機構的冷卻機構提供給 攪拌裝置14之一些或所有元件。 ^在本實例中,水平定向之五個轉圈的線圈係放置成環 几著熱衣置2。線圈係以具有可從大約丨〇調整到J 赫 _ 兹之頻率的交流電供電。電流之振幅可由0調整到3〇〇〇Α。 在本實例中,該線圈係連接至一包含控制機構的可控 制電源,以控制傳送至線圈之電流的頻率及振幅數值。這 些數值可為不變的,或這些數值可為根據用於製程的預設 時間間隔而改變。或者,這些數值可以根據一個或數個例 如溶爐溫度等等的製程參數而被控制。在此,用於感測製 程參數的感測器將被連接至電源之控制機構。 於以上的實施例中,已發現產生至少0.5公分/秒之 籲+均溶化速率的電流將會是適當的。該平均溶化速率無法 被直接測里,但基於模型及模擬,有可能的是計算出供應 至攪拌裝置以達成此平均熔化速率的電流。 有可此的疋使熔爐設有電磁控制裝置,用以將來自線 圈的電磁場集中至掛禍。電磁控制裝置可以例如是磁性聚 焦材料,像是美國密西根州Auburn HiU的Fluxtrol公司所 提供的Fluxtrol A (商標)。 在本貝例中,加熱裝置係以直流電供電,同時攪拌裝 置係則以又机電供電。來自加熱裝置的電磁場將是如此靜 8 200813267 態的,而不會引發熔化物中的攪拌。 於選擇的貫例中’個別線圈的交流電可以相對彼此相 移位。於又選擇的實例中,攪拌裝置包含三個線圈,其中 每個線圈都以三相交流電的個別相位供電。 於選擇的實例中,溶爐中有數個掛塌4。 本發明之證明 根據本發明,由於攪拌機構14可獨立於加熱機構3而 受到控制 實施例 的特徵化 首先 釋放塗層In this example, the stirring device 14 is placed outside the insulating device 2 to protect the stirring device from heat from the heating device 3. Further, it is possible to cool, for example, a water-cooling mechanism or the like. The mechanism provides some or all of the components of the agitation device 14. ^ In this example, the five-coil coils that are oriented horizontally are placed in a loop with a number of thermostats 2. The coils are adjustable from about 丨〇 to J Hz. _ The frequency of the alternating current supply. The amplitude of the current can be adjusted from 0 to 3. In this example, the coil is connected to a controllable power supply containing a control mechanism to control the frequency of the current delivered to the coil and Amplitude value. These values may be constant, or these values may be changed according to preset time intervals for the process. Alternatively, these values may be controlled according to one or several process parameters such as furnace temperature and the like. Here, the sensor for sensing the process parameters will be connected to the control mechanism of the power source. In the above embodiments, it has been found that at least 0.5 is generated. The centimeter/second call + current melting rate current will be appropriate. The average melting rate cannot be directly measured, but based on the model and simulation, it is possible to calculate the supply to the stirring device to achieve this average melting rate. There is a possibility that the furnace is provided with an electromagnetic control device for concentrating the electromagnetic field from the coil. The electromagnetic control device can be, for example, a magnetic focusing material, such as that provided by Fluxtrol of Auburn HiU, Michigan, USA. Fluxtrol A (trademark). In this case, the heating device is powered by direct current, while the agitating device is powered by electromechanical. The electromagnetic field from the heating device will be so static that it will not cause melting. Stirring in the mixture. In the selected example, the alternating currents of the individual coils can be displaced relative to each other. In a further example, the stirring device comprises three coils, each of which is powered by an individual phase of three-phase alternating current. In the selected example, there are several collapses in the furnace. 4. Proof of the invention According to the invention, the agitation mechanism 14 is unique The heating means 3 by the control features of the first embodiment of the release coating
可以達成該結晶化製程的改善控制 及所產峰之材料 用於製造多結晶矽的四個標準坩堝被塗層以一 且根據標準程序以PV等級之矽填料。2載的 掛禍被放置在㈣内的石墨支撐板上1爐接著被關閉、 :空:以氬氣回填。掛塥係藉著頂部及底部電阻加熱器加 :至所有頻㈣為止。排熱裝置及電磁攪拌裝置係 被啟動,1多結晶矽錠塊係成長。在完成晶體之士, 程序被冷卻。鍵塊係被切割成16塊15:二 ^ Semilab ΓοΓ' 从-PCD儀益測虿母個塊件 命。來自其中-個錠塊的四個塊件之影 數二子使用舞 紅外線影像係顯示沒有第二相的沉澱。:::在圖3中。 函數之平均少數載子使用壽命係顯示在圖;:牛中:置的 出的曲線)。 中(以實線繚 為了做比較,在沒有使用電磁㈣裝置的情況下施行 9 200813267 相同私序。來自其中-個鏡塊之四個塊件的對應影像係顯 示在圖4中。紅外線影像顯示第二相的沉澱。為塊件中之 位置之函數的平均少數载子使用壽命係顯示在圖5中(以 虛線緣出的曲線)。 用於太陽能等級矽錠塊的二項品質需求為高少數載子 使用壽命及沒有沉澱。如能夠在圖4及圖5中看出的,本 發明改善這些性質。 鲁 2 :藉著電磁攪j半器攪棘夕模剞計篡 28x28x4毫米的方形銅輪廓之5個轉圈的線圈係放置 成環繞四掛禍DS熔爐中之隔熱裝置的外侧。該線圈係18〇 毫米高且以離開㈣壁面37 3公分的距離放置在錠塊的直 立位準處。具有線圈之熔爐的2D軸對稱有限元素法(FEM) 計算指出1 50赫兹之283〇安培的線圈電流,可以獲得 3公为/秒之取大熔化速率及2 7公分/秒之平均熔化 速率。Improved control of the crystallization process and material of the peaks can be achieved. The four standard crucibles used to make the polycrystalline germanium are coated with a PV grade crucible according to standard procedures. The two-loaded accident was placed on the graphite support plate in (4) and then the furnace was closed. Air: Backfilled with argon. The hanging system is added by the top and bottom resistance heaters: to all frequencies (four). The heat-dissipating device and the electromagnetic stirring device were activated, and the 1-polycrystalline ingot block was grown. After completing the Crystal Warrior, the program is cooled. The key block is cut into 16 blocks 15: 2 ^ Semilab ΓοΓ' From the -PCD instrument to measure the block piece life. The shadow of the four blocks from one of the ingots is used. The infrared image shows no precipitation of the second phase. ::: In Figure 3. The average minority carrier lifetime of the function is shown in the graph;: in the cow: the set curve). In the middle of the line (for the comparison, the same private sequence is applied in the case of the electromagnetic device without using the electromagnetic (four) device. The corresponding image from the four blocks of the mirror block is shown in Figure 4. Infrared image display Precipitation of the second phase. The average minority carrier lifetime as a function of position in the block is shown in Figure 5 (curve with a dotted line). The two quality requirements for solar grade bismuth ingots are high. The minority carrier has a service life and no precipitation. The present invention improves these properties as can be seen in Figures 4 and 5. Lu 2: by means of an electromagnetic stirrer, the second half of the device is 28x28x4 mm square copper. The 5 turns of the contour are placed around the outside of the thermal insulation in the DS furnace. The coil is 18 mm high and is placed at an upright position of the ingot at a distance of 37 cm from the (four) wall. The 2D axisymmetric finite element method (FEM) calculation for a furnace with coils indicates a coil current of 283 amps at 50 Hz, which can achieve a large melting rate of 3 ng/sec and an average melting rate of 2 7 cm/sec. .
_ 一電磁授JLiAii之模型計I 實施例2中所敘述之計算係被重複,但電流係減少 20/。。具有線圈之熔爐的2D軸對稱FEM計算指出:以5〇 赫茲之566安培的線圈電流,可以獲得3 〇公分/秒之最 大熔化速率及0.6公分/秒之平均熔化速率。 lAJj 4 :藉i 一電磁攪拌j|_攪拌之握刑計箄 實施例2之熔爐及線圈的2D軸對稱FEM計算指出: 以30赫兹之2830安培的線圈電流,可以獲得分/ 秒之最大熔化速率及2·8公分/秒之平均熔化速率。 10 200813267_ A model of electromagnetically imparted JLiAii The calculation system described in Example 2 was repeated, but the current system was reduced by 20/. . The 2D axisymmetric FEM calculation of a furnace with coils indicates that a maximum melting rate of 3 〇 cm/sec and an average melting rate of 0.6 cm/sec can be obtained with a coil current of 566 amps at 5 Hz. lAJj 4: By means of an electromagnetic stirring j|_ stirring grip, the 2D axisymmetric FEM calculation of the furnace and coil of Example 2 indicates that the maximum melting of minutes/second can be obtained with a coil current of 2830 amps at 30 Hz. Rate and average melting rate of 2·8 cm/sec. 10 200813267
加熱器擾拌的(比較)模型計篝 3D FEM計算係由具有配置在坩堝上方及下方之三相 交流電加熱器的DS熔爐所做成。以大約1〇8〇安培(每一 相位)的電流在最高容量下加熱會產生2·2公分/秒之最 大熔化速率及0.6么、分//秒之平均熔化速率。在結晶化期 間’攪拌效果係由於降低的功率輸入而降低。 半的(比鲂 在裝有溶化石夕的掛瑪中,掛竭中心與壁面間的最大溫 度差為1〇K。模型計算指出:在〇1_〇5公"秒範圍中之 平均溶化速率。 已經顯示出根據本發明的熔爐增加了Heater Scrambled (Comparative) Model Count The 3D FEM calculation is made up of a DS furnace with three-phase AC heaters placed above and below the raft. Heating at a maximum capacity with a current of about 1 〇 8 amps (per phase) produces a maximum melting rate of 2·2 cm/sec and an average melting rate of 0.6 Å/min. The agitation effect during crystallization is reduced due to reduced power input. Half (the ratio of the maximum temperature difference between the center and the wall of the hanging enamel in the enamel with the melting fossils is 1〇K. The model calculation indicates that the average melting in the range of 〇1_〇5 public" Rate. It has been shown that the furnace according to the invention has been added
【圖式簡單說明】 於圖式中: 了溶化物的 。此結果 圖1說明由㈣面觀看之本發明實例;[Simple description of the diagram] In the figure: the dissolved matter. This result Fig. 1 illustrates an example of the invention as viewed from the (four) plane;
’其中在結晶化期間係 ’其中在結晶化期間係 所示樣本之少數載子的使用壽 11 200813267 【主要元件符號說明】 1 上殼體 2 隔熱裝置 3 加熱裝置 4 坩堝 5 熔化矽 6 固體矽 7 氣體入口 8 密封件 9 氣體出口 10 下殼體 11 坩堝支撐件 12 下絕緣裝置 13 導引件 14 攪拌裝置 12'Where during the crystallization period' is the use of the minority carrier of the sample shown in the crystallization period. 2008 11267 [Main component symbol description] 1 Upper casing 2 Insulation device 3 Heating device 4 坩埚5 Melting 矽6 Solid矽7 Gas inlet 8 Seal 9 Gas outlet 10 Lower housing 11 坩埚 Support 12 Lower insulation 13 Guide 14 Stirrer 12
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| CN102575376A (en) * | 2009-09-18 | 2012-07-11 | Abb公司 | Apparatus and method for crystallization of silicon |
| CN102732959A (en) * | 2011-04-11 | 2012-10-17 | 上海普罗新能源有限公司 | Polysilicon ingot furnace and polysilicon ingot casting method |
| CN103014850A (en) * | 2012-12-10 | 2013-04-03 | 常州大学 | Novel polycrystalline silicon ingot casting device and ingot casting method thereof |
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| DE102008029951B4 (en) | 2008-06-26 | 2011-06-09 | Schott Ag | Heat-insulating arrangement for crucibles and their use, as well as apparatus and method for the production of monocrystalline or multicrystalline materials |
| DE102008039457A1 (en) | 2008-08-25 | 2009-09-17 | Schott Ag | Apparatus for oriented solidification of melts in crucibles, especially production of mono- or multi-crystalline silicon, comprises induction heater mounted on base of crucible or plate which supports it |
| DE102010028173B4 (en) | 2010-04-26 | 2012-11-29 | Forschungsverbund Berlin E.V. | Process for the preparation of crystal blocks of high purity |
| CN102644104A (en) * | 2011-06-15 | 2012-08-22 | 安阳市凤凰光伏科技有限公司 | Gradient improving device of thermal field for producing pseudo single crystal silicon ingot by casting method |
| JP5951826B2 (en) * | 2015-03-02 | 2016-07-13 | エービービー エービー | Apparatus and method for crystallizing silicon |
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| DE19704075C2 (en) * | 1997-02-04 | 2002-09-19 | Rossendorf Forschzent | Method and device for producing single crystals in ampoules under the influence of magnetic fields |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102575376A (en) * | 2009-09-18 | 2012-07-11 | Abb公司 | Apparatus and method for crystallization of silicon |
| CN102575376B (en) * | 2009-09-18 | 2016-07-06 | Abb公司 | Apparatus and methods for silicon crystallization |
| CN102732959A (en) * | 2011-04-11 | 2012-10-17 | 上海普罗新能源有限公司 | Polysilicon ingot furnace and polysilicon ingot casting method |
| CN103014850A (en) * | 2012-12-10 | 2013-04-03 | 常州大学 | Novel polycrystalline silicon ingot casting device and ingot casting method thereof |
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