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TW200812109A - White light-emitting apparatus - Google Patents

White light-emitting apparatus Download PDF

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Publication number
TW200812109A
TW200812109A TW96101133A TW96101133A TW200812109A TW 200812109 A TW200812109 A TW 200812109A TW 96101133 A TW96101133 A TW 96101133A TW 96101133 A TW96101133 A TW 96101133A TW 200812109 A TW200812109 A TW 200812109A
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TW
Taiwan
Prior art keywords
light emitting
white light
fluorescent material
emitting device
light
Prior art date
Application number
TW96101133A
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Chinese (zh)
Inventor
Chih-Chieh Yang
Chih-Min Lin
Yi-Jung Chen
Ru-Shi Liu
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Everlight Electronics Co Ltd
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Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to JP2007116298A priority Critical patent/JP2008060530A/en
Publication of TW200812109A publication Critical patent/TW200812109A/en

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    • Y02B20/181

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  • Luminescent Compositions (AREA)

Abstract

A white light-emitting apparatus comprises a light-emitting device, a nitride fluorescent compound and an oxynitride fluorescent compound. The light-emitting device is used to generate a first color light having a first wavelength range. The nitride fluorescent compound and the oxynitride fluorescent compound cover the light-emitting device. The nitride and oxynitride fluorescent compounds are excited by the first color light, and further generate a second color light having a second wavelength range and a third color light having a third wavelength range, respectively. The first, second and third color lights are mixed to generate a white light. A white light-emitting diode is also disclosed in the specification.

Description

200812109 九、發明說明: 【發明所屬之技術領域】 且特別是有關於一種 本發明是有關於一種發光裝置 白光發光裝置。 【先前技術】 、白光t光二極體心具有省電、低驅動電壓、壽命長 以及,有%保效果等優點,逐漸用於各種照㈣備以及液 晶顯示器的背光源上,成為目前重要的發光裝置之… 目前習知的白光發光二極體的其中一種製作方法為使 用藍光發光元件加上黃色螢光材料,用以產生白光。此方 ^斤產生的白光效率相當不錯,但缺點是演色性差以及色 々飽和度不佳’且在南電流下會呈現色度座標過度偏移的 現象由於在液晶顯不器的背光源以及一些照明設備的使 =上’對於色彩的要求相當嚴格,上述提及之缺點 ,將使 得液晶顯示器與照明設備的顯示與照明效果下降。因此, -種在不同:L作電流下仍具有良好的色_定性,同時具 有較佳决色性以及色彩飽和度的白光發光裝置為目前工業 界所需。 【發明内容】 因此’本發明提出了一種在不同的工作電流下皆具有 良好的色彩穩定性之白光發光裝置。 根據本發明之一實施例,提出了 一種白光發光裝置, 此發光裝置包含了發光元件、氮化物螢光材料以及氮氧化 200812109 物螢光材料。發光元件係用於產生具有第一波長範圍之第 一色光。氮化物螢光材料與氮氧化物螢光材料包覆此發光 元件,當此二螢光材料受第一色光激發後,將分別產生具 有第二波長範圍的第二色光以及具有第三波長範圍的第三 色光。第一色光、第二色光以及第三色光混合形成一白光。 根據本發明之一實施例,提出了 一種白光發光二極 體。此白光發光二極體包含發光元件,氮化物螢光材料以 及氮氧化物螢光材料。發光元件係用於產生具有第一波長 範圍之藍光。氮化物螢光材料與氮氧化物螢光材料包覆此 發光元件,且此二螢光材料係分別由鈽金屬活化之氮化物 與銪金屬活化之氮氧化物所組成。且,當此二螢光材料受 藍光激發後,分別產生具有第二波長範圍的紅光以及具有 弟二波長範圍的綠光。前述之藍光、紅光以及綠光混合形 成一白光。 由本發明之上述實施例所述,本發明實施例所述之白 光發光裝置,在不同的工作電流下,發光裝置並不會因工 作電流的改變而出現顏色的偏差。而且,前述的白光發光 裝置的演色指數(color rendering index ; CRI)在90以上,具 有良好的演色性。除此之外,本發明實施例中使用三原色 搭配而成的白光發光裝置,當用以做為顯示器的背光源 時,其色彩飽和度可達68 〇/〇,較習知藍光晶片搭配黃色螢 光材料所製作的背光源的顯示器的色彩飽和度來得高。 【實施方式】 弟1圖係繪不了依照本發明一實施例所述之白光發光 200812109 裝置的剖面結構圖。在第」圖中,白光發光裝L 係由一發,元件104與一封裝谬體108所構成。封裝膠體 ⑽具有I化物螢光材料與氮氧化物螢光材料分散於其 中’此二螢光材料係分別由氮化物與氮氧化物所組成。此 夕卜’發光元件104下具有一封裝承載S 102。在封裝承載座 102與發光元件104之間具有至少一導線106以電性連接封 裝承載座102與發光元件1〇4,使發光元件可藉由導線 106接收外界施加之電壓以進行發光。 ’在前述實施例中,發光元件係用於產生具有第一波長 範圍的第一色光。第一色光可用於激發氮化物螢光材料與 氮氧化物蝥光材料,使其分別產生具有第二波長範圍的第 一色光以及具有第三波長範圍的第三色光。藉由第一、第 二以及第三色光的混合,可使白光發光裝置1〇〇進一步產 生白光。在一實施例中,此白光發光裝置1〇〇為一白光發 光二極體。 上述之第一色光可為一藍光,第一波長範圍約為36〇 I nm〜48〇nm。第二色光可為一紅光,第二波長範圍約為56〇 nm〜76〇nm。第三色光可為一綠光,第三波長範圍約為49〇 nm〜660 nm 〇 上述之發光元件可以為一半導體元件,此半導體元件 為III·V族元素的多元複合化合物。上述之氮化物螢光材料 例如可為鈽金屬活化的氮化物,如CaxSiyN3:Ce (0<(x,y)<4) 或CaSiNyCe (激發波長約為300 nm〜500 nm)。氮氡化物螢 光材料例如可為銪金屬活化的氮氧化物,如 sl2XSi〇4.yNy:Eu (0<x<l,0< y<4)或 SrSi202N2:Eu (激發波 200812109 長約為350 nm〜480 nm)。 第2圖係繪示了依照本發明一實施例所述之白光發光 裝置在20毫安培(mA)的直流電工作電流下各色光的放射 光譜。其中(a)圖為一 III-V族元素組成的半導體發光元件所 放射的藍光光譜,其放射波長大約為430 nm〜480 nm。(b) : 圖為前述的氮氧化物螢光材料SrSi202N2:Eu受藍光激發後 - 所放射的光譜,其放射波長大約為480 nm〜660 nm,為一 綠光光譜。在430 nm〜480 nm所出現的光譜為其激發光源 φ 的放射藍光光譜。(c)圖為前述的氮化物螢光材料CaSiN2:Ce 受藍光激發後所放射的光譜,其放射波長大約為560 nm〜780 nm,為一紅光光譜。如同(b)圖戶斤述,在430 nm〜480 nm所出現的光譜為其激發光源的放射藍光光譜。(d)圖為前 述三種顏色的光譜混合所形成之白光光譜,其放射波長大 約為 43Ό nm〜780 nm 〇 第3圖係繪示了第2圖中所述的白光發光裝置在不同 的工作電流下的色度座標的變化。a、b、c、d分別代表了 φ 白光發光裝置所放射之未進行光色混合前的藍光、綠光、 紅光以及三原色混合後所產生之白光。在不同的工作電流 下,各顏色的光的色度座標的變化相當和缓,由此可看出 此白光發光裝置具有良好的色彩穩定性,其色度座樣並不 會隨著工作電流的變化而產生大幅度的偏移。 - 表一進一步揭示了第2圖中所述的白光發光裝置在不 同的工作電流下白光的色彩穩定度的變化。由表一中,當 電流由5 mA上昇至60 mA時,其色度座標、色温以及演200812109 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a light-emitting device white light-emitting device. [Prior Art] The white light t-light diode has the advantages of power saving, low driving voltage, long life, and % guaranteed effect. It is gradually used in backlights of various photos and liquid crystal displays, and has become an important light. Device... One of the currently known white light emitting diodes is to use a blue light emitting element plus a yellow fluorescent material to produce white light. The white light efficiency produced by this side is quite good, but the disadvantage is poor color rendering and poor color saturation, and the phenomenon of excessive chromaticity coordinates shifting under the south current due to the backlight of the liquid crystal display and some illumination. The device's requirements for color are quite strict, and the above mentioned shortcomings will reduce the display and illumination effects of liquid crystal displays and lighting devices. Therefore, a white light-emitting device which has a good color-determination under the same current as L, and which has better color-reducing color and color saturation is currently required by the industry. SUMMARY OF THE INVENTION Therefore, the present invention proposes a white light emitting device which has good color stability under different operating currents. According to an embodiment of the present invention, a white light emitting device comprising a light emitting element, a nitride fluorescent material, and a nitrogen oxide 200812109 fluorescent material is proposed. The illuminating element is for producing a first color light having a first wavelength range. The nitride fluorescent material and the oxynitride fluorescent material coat the light emitting element, and when the two fluorescent materials are excited by the first color light, respectively generate a second color light having a second wavelength range and have a third wavelength range The third color light. The first color light, the second color light, and the third color light are mixed to form a white light. According to an embodiment of the invention, a white light emitting diode is proposed. The white light emitting diode comprises a light emitting element, a nitride fluorescent material, and an oxynitride fluorescent material. The illuminating element is used to generate blue light having a first wavelength range. The nitride fluorescent material and the oxynitride fluorescent material coat the light-emitting element, and the two fluorescent materials are respectively composed of a base metal-activated nitride and a base metal-activated nitrogen oxide. Moreover, when the two phosphor materials are excited by blue light, red light having a second wavelength range and green light having a wavelength range of two wavelengths are respectively generated. The aforementioned combination of blue light, red light and green light forms a white light. According to the above embodiment of the present invention, in the white light emitting device according to the embodiment of the present invention, the light emitting device does not exhibit a color deviation due to a change in the operating current under different operating currents. Further, the above-described white light-emitting device has a color rendering index (CRI) of 90 or more and has good color rendering properties. In addition, in the embodiment of the present invention, a white light emitting device using three primary colors is used, and when used as a backlight of the display, the color saturation can reach 68 〇/〇, which is better than the conventional blue chip with yellow fluorescent. The color saturation of the display of the backlight made of the optical material is high. [Embodiment] FIG. 1 is a cross-sectional structural view of a device according to an embodiment of the present invention. In the first figure, the white light-emitting device L is composed of a single element, an element 104 and a package body 108. The encapsulant (10) has an I-form fluorescent material and an oxynitride fluorescent material dispersed therein. The two phosphor materials are composed of a nitride and an oxynitride, respectively. In this case, the light-emitting element 104 has a package carrier S 102 under it. Between the package carrier 102 and the light-emitting element 104, at least one wire 106 is electrically connected to the package carrier 102 and the light-emitting element 1〇4, so that the light-emitting element can receive an externally applied voltage through the wire 106 to emit light. In the foregoing embodiment, the light-emitting element is for generating a first color light having a first wavelength range. The first color light can be used to excite the nitride phosphor material and the oxynitride phosphor material to produce a first color light having a second wavelength range and a third color light having a third wavelength range, respectively. The white light-emitting device 1 can further generate white light by the mixing of the first, second and third color lights. In one embodiment, the white light emitting device 1 is a white light emitting diode. The first color light described above may be a blue light, and the first wavelength range is about 36 〇 I nm to 48 〇 nm. The second color light may be a red light, and the second wavelength range is about 56 〇 nm to 76 〇 nm. The third color light may be a green light, and the third wavelength range is about 49 〇 nm to 660 nm. The light-emitting element may be a semiconductor element, and the semiconductor element is a multi-component compound of a group III·V element. The above nitride fluorescent material may be, for example, a ruthenium metal activated nitride such as CaxSiyN3:Ce (0<(x,y)<4) or CaSiNyCe (excitation wavelength is about 300 nm to 500 nm). The nitrogen telluride fluorescent material may be, for example, a ruthenium metal activated oxynitride such as sl2XSi〇4.yNy:Eu (0<x<1,0<y<4) or SrSi202N2:Eu (excitation wave 200812109 is about 350 long) Nm~480 nm). Fig. 2 is a view showing the emission spectrum of light of each color of a white light emitting device according to an embodiment of the present invention at a direct current operating current of 20 milliamperes (mA). (a) is a blue light spectrum emitted by a semiconductor light-emitting element composed of a group III-V element, and has a radiation wavelength of about 430 nm to 480 nm. (b): The picture shows the spectrum of the above-mentioned oxynitride phosphor SrSi202N2:Eu excited by blue light, which emits a spectrum with a wavelength of about 480 nm to 660 nm, which is a green spectrum. The spectrum appearing at 430 nm to 480 nm is the emission blue light spectrum of the excitation source φ. (c) The picture shows the spectrum of the above-mentioned nitride fluorescent material CaSiN2:Ce excited by blue light, and its emission wavelength is about 560 nm to 780 nm, which is a red spectrum. As shown in (b), the spectrum appearing at 430 nm to 480 nm is the emission blue light spectrum of the excitation source. (d) The picture shows the white light spectrum formed by the spectral mixing of the above three colors, and the emission wavelength is about 43 〜 nm to 780 nm. The third figure shows the different operating currents of the white light illuminating device described in FIG. The change in the chromaticity coordinates below. a, b, c, and d respectively represent the white light generated by the mixing of the blue light, the green light, the red light, and the three primary colors before the light color mixing is performed by the φ white light emitting device. Under different operating currents, the chromaticity coordinates of the light of each color change quite slowly, so it can be seen that the white light illuminating device has good color stability, and its chromaticity sample does not change with the working current. And it produces a large offset. - Table 1 further discloses the change in color stability of white light at different operating currents for the white light emitting device described in Fig. 2. From Table 1, when the current rises from 5 mA to 60 mA, its chromaticity coordinates, color temperature and performance

S 色指數(color rendering index ; CRI)都呈現相當穩定的表 8 200812109 現。例如其演色指數的變化僅為2·1 %左右,其色温的變化 更低於1.5 %。 表一:不同工作電流下白光的色彩穩定度的變化 電流(mA) 色度座標 色溫(K) 演色指數(CRI) 5 (0.3383,0.3363) 5239 90.3 10 (03387,03368) 5218 90.3 20 (0.3391,0.3374) 5206 90.5 30 (0.3389,0.3373) 5211 90.9 40 (0.3384,03372) 5230 91.2 60 (0.3369,0.3367) 5297 92.2 由本發明的上述實施例可知,本發明實施例所述之白 光發光裝置,在不同的工作電流下,其色度座標、色温以 及演色指數都具有良好的穩定性。換句話說,當此白光發 光裝置需在不同的工作電流下使用時,此發光裝置並不會 因工作電流的改變而出現顏色的偏差。此外,前述的白光 發光裝置的演色指數(color rendering index ; CRI)在90以 上,而習知的白光二極體的CRI僅為80左右,相較之下, 本發明實施例的白光發光裝置具有更佳的演色性。除此之 外,本發明實施例中使用三原色搭配而成的白光發光裝 置,當用以做為顯示器的背光源時,其色彩飽和度可達68 %,較習知藍光晶片搭配黃色螢光材料所製作的背光源的顯 示器的色彩飽和度來得高。 雖然本發明已以實施例揭露如上,然其並非用以限定 200812109 本發明,任何熟習此技藝者,在不脫離本發明之精神和範 圍内,當可作各種之更動與潤飾,因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂,所附圖式之詳細說明如下: 第1圖係繪示了依照本發明一實施例所述之白光發光 裝置的剖面結構圖。 第2圖係繪示了依照本發明一實施例所述之白光發光 裝置在20毫安培的直流電工作電流下各色光的放射光譜。 苐3圖係繪示了第2圖中所述的白光發光裝置在不同 的工作電流下的色度座標的變化。 【主要元件符號說明】 1〇〇:白光發光裝置 102:封裝承載座 104 :發光元件 106 :導線 108 :封裝膠體The S color index (CRI) is fairly stable. Table 8 200812109 is now available. For example, the change in color rendering index is only about 2.1%, and the change in color temperature is less than 1.5%. Table 1: Variation of color stability of white light at different operating currents (mA) Chromaticity coordinate color temperature (K) Color rendering index (CRI) 5 (0.3383, 0.3363) 5239 90.3 10 (03387, 03368) 5218 90.3 20 (0.3391, 0.3374) 5206 90.5 30 (0.3389, 0.3373) 5211 90.9 40 (0.3384, 03372) 5230 91.2 60 (0.3369, 0.3367) 5297 92.2 It is known from the above embodiments of the present invention that the white light emitting device according to the embodiment of the present invention is different. Under the working current, its chromaticity coordinates, color temperature and color rendering index have good stability. In other words, when the white light emitting device is to be used under different operating currents, the light emitting device does not exhibit a color deviation due to a change in operating current. In addition, the white light emitting device has a color rendering index (CRI) of 90 or more, and the conventional white light diode has a CRI of only about 80. In contrast, the white light emitting device of the embodiment of the present invention has Better color rendering. In addition, in the embodiment of the present invention, the white light emitting device using the three primary colors is used, and when used as a backlight of the display, the color saturation can reach 68%, which is better than the conventional blue light wafer with the yellow fluorescent material. The color saturation of the display of the produced backlight is high. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. It is to be understood that the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A cross-sectional structural view of the white light emitting device. Fig. 2 is a view showing the emission spectrum of light of each color of a white light emitting device according to an embodiment of the present invention at a direct current operating current of 20 mA. The Fig. 3 diagram shows the variation of the chromaticity coordinates of the white light emitting device described in Fig. 2 at different operating currents. [Description of main component symbols] 1〇〇: White light emitting device 102: Package carrier 104: Light-emitting element 106: Wire 108: Package colloid

Claims (1)

200812109 十、申請專利範圍: 1· 一種白光發光裝置,包含: 一發光元件,該發光元件係用於產生具有一第一波長 範圍之一第一色光; 一氮化物螢光材料,包覆該發光元件,該氮化物螢光 材料受該第一色光激發後,產生具有一第二波長範圍之一 第二色光;以及 一氮氧化物螢光材料,包覆該發光元件,該氮氧化物 螢光材料受該第一色光激發後,產生具有一第三波長範圍 之一第二色光,該第三色光與該第二色光以及該第一色光 混合形成一白光。 2.如申請專利範圍第丨項所述之白光發光裝置,其中 談第一色光係為藍光。 3·如申請專利範圍第1項所述之白光發光裝置,其中 该發光元件為一半導體元件。 4. 如申請專利範圍第3項所述之白光發光裝置,其中 該半導體元件為_族元素之多元複合化合物。 5. 如申印專利範圍第1項所述之白光發光裝置,其中 該第一波長範圍大約為36〇nm〜48〇nm。 6. 如申請專職圍第1項所述之自紐光裝置,其中 200812109 '... ..- - . . ' 該第二色光為紅光。 7·如申請專利範圍第1項所述之白光發光裝置,其中 該第二波長範圍大約為560 nm〜760 nm。 ^ 8·如申請專利範圍第}項所述之白光發光裝置,其中 _ 該氮化物螢光材料為鈽金屬活化之氮化物。 _ 9·如申請專利範圍第8項所述之白光發光裝置,其中 _ 該氮化物螢光材料的化學式為CaSiN2:Ce。 1〇·如申請專利範圍第9項所述之白光發光裝置,其 中該氮化物螢光材料的受激發波長大約為3〇〇nm〜5〇〇nm。 11·如申請專利範圍第8項所述之白光發光裝置,其 中該氮化物螢光材料的化學式為caxSiyN3:Ce,且 0&lt;(x,y)&lt;4 〇 12·如申睛專利範圍第!項所述之白光發光裝置,其 中該第三色光為綠光。 , 丨3·如申請專利範圍第丨項所述之白光發光裝置,其 中該第三波長範圍大約為490 nm〜660 nm。 14·如申凊專利範圍第〗項所述之白光發光裝置,其 中該氮氧化物螢光材料為一銪金屬活化之氮氧化合物。 12 200812109 15.如申請專利範圍第14項所述之白光發光裝置,其 中該氮氧化物螢光材料的化學式為SrSi2Q2N2:Eu。 16·如申請專利範圍第15項所述之白光發光裝置,其 中該氮氧化物螢光材料的受激發波長大約為35〇 〜48〇 nm °200812109 X. Patent Application Range: 1. A white light emitting device comprising: a light emitting element for generating a first color light having a first wavelength range; a nitride fluorescent material covering the a light-emitting element, the nitride fluorescent material is excited by the first color light to generate a second color light having a second wavelength range; and an oxynitride fluorescent material covering the light-emitting element, the nitrogen oxide After the fluorescent material is excited by the first color light, a second color light having a third wavelength range is generated, and the third color light is mixed with the second color light and the first color light to form a white light. 2. The white light emitting device of claim 2, wherein the first color light system is blue light. 3. The white light emitting device of claim 1, wherein the light emitting element is a semiconductor element. 4. The white light emitting device according to claim 3, wherein the semiconductor element is a multi-component compound of a group element. 5. The white light emitting device of claim 1, wherein the first wavelength range is approximately 36 〇 nm to 48 〇 nm. 6. If applying for the self-lighting device described in item 1 of the full-time division, which is 200812109 '... ..- - . . ' The second color light is red light. 7. The white light emitting device of claim 1, wherein the second wavelength range is approximately 560 nm to 760 nm. The white light emitting device of claim 1, wherein the nitride fluorescent material is a base metal activated nitride. The white light emitting device of claim 8, wherein the chemical formula of the nitride fluorescent material is CaSiN2:Ce. The white light-emitting device of claim 9, wherein the nitride fluorescent material has an excitation wavelength of about 3 〇〇 nm to 5 〇〇 nm. 11. The white light emitting device of claim 8, wherein the nitride fluorescent material has a chemical formula of caxSiyN3:Ce, and 0 &lt;(x,y)&lt;4 〇12· ! The white light emitting device of the item, wherein the third color light is green light. The white light emitting device of claim 3, wherein the third wavelength range is approximately 490 nm to 660 nm. 14. The white light emitting device of claim 1, wherein the oxynitride phosphor is a metal-activated oxynitride. The white light emitting device of claim 14, wherein the oxynitride fluorescent material has a chemical formula of SrSi2Q2N2:Eu. The white light emitting device of claim 15, wherein the oxynitride phosphor has an excitation wavelength of about 35 〜 to 48 〇 nm ° Π·如申請專利範圍第14項所述之白先發光裝置,其 中該&amp;氧化物螢光材料的化學式為Sr2 2xSi〇4 yNy:Eu,且 0&lt;X&lt;1,〇&lt;y&lt;4 〇 18· —種白光發光二極體,包含 一發光元件,該發光元件係用於產生具有一第一波長 範圍之一藍光; 一氨化物螢光材料,包覆該發光元件,該氮化物螢光 材料係為一鈽金屬活化之氮化物,該氮化物螢光材料受該 藍光激發後,產生具有一第二波長範圍之一紅光;以及 一氮氧化物螢光材料,包覆該發光元件,該氮氧化物 螢光材料係為一銪金屬活化之氮氧化物,該氮氧化物螢光 材料受該藍光激發後,產生具有一第三波長範圍之一綠 光’該綠光與該紅光以及該益光混合形成一白光^ 19·如申請專利範圍第18項所述之白光發光二極體, 其中該發光元件為一半導體元件。 13 200812109 20·如申請專利範圍第19項所述之白光發光二極體, 其中該半導體元件為Ιπ_ν族元素之多元複合化合物。 21·如申請專利範圍第18項所述之白光發光二極體, ,、中該弟波長範圍大約為360 nm〜480 nm。 乂 22·如申請專利範圍第18項所述之白光發光二極體, 其中該第二波長範圍大約為560 nm〜760 nm。 擊 23·如申請專利範圍第!8項所述之白光發光二極體, 其中該氮化物螢光材料的化學式為CaSiN2:Ce。 24·如申請專利範圍第23項所述之白光發光二極體, 其中該氮化物螢光材料的受激發波長大約為3〇〇 nrn〜5〇〇 nm。 25·如申請專利範圍第18項所述之白光發光二極體, 其中該氮化物螢光材料的化學式為CaxSiyN3:Ce,且 0&lt;(x,y)&lt;4 〇 26·如申^專利範圍第18項所述之白光發光二極體, ' 其中該第二波長範圍大約為490 nm〜660 nm。 27·如申凊專利範圍第1 $項所述之白光發光二極體, 其中該氮氧化物螢光材料的化學式為SrSi2〇2N2:Eu。 200812109 28.如申請專利範圍第27項所述之白光發光二極體, 其中該氮氧化物螢光材料的受激發波長大約為350 nm〜480 nm ° 29·如申請專利範圍第18項所述之白光發光二極體, 其中該氮氧化物螢光材料的化學式為Si*2_2xSi04.yNy:Eu,且 0&lt;x&lt;l,0&lt;y&lt;4 〇The white light-emitting device of claim 14, wherein the &amp; oxide phosphor material has a chemical formula of Sr2 2xSi〇4 yNy:Eu, and 0 &lt;X&lt;1,〇&lt;y&lt;4 〇18· a white light emitting diode comprising a light emitting element for generating blue light having a first wavelength range; a hexamide fluorescent material covering the light emitting element, the nitride fluorescent material The light material is a metal-activated nitride, and the nitride fluorescent material is excited by the blue light to generate red light having a second wavelength range; and an oxynitride fluorescent material covering the light-emitting element The oxynitride fluorescent material is a metal-activated oxynitride, and the oxynitride fluorescent material is excited by the blue light to generate green light having a third wavelength range, the green light and the red The light and the light are mixed to form a white light. The white light emitting diode according to claim 18, wherein the light emitting element is a semiconductor element. The white light emitting diode according to claim 19, wherein the semiconductor element is a multi-component composite compound of the Ιπ_ν group element. 21. The white light emitting diode according to claim 18, wherein the wavelength range is about 360 nm to 480 nm. The white light emitting diode according to claim 18, wherein the second wavelength range is approximately 560 nm to 760 nm. Click 23·If you apply for a patent scope! The white light emitting diode according to item 8, wherein the nitride fluorescent material has a chemical formula of CaSiN2:Ce. The white light emitting diode according to claim 23, wherein the nitride fluorescent material has an excitation wavelength of about 3 〇〇 nrn 〜5 〇〇 nm. 25. The white light emitting diode according to claim 18, wherein the nitride fluorescent material has a chemical formula of CaxSiyN3:Ce, and 0 &lt;(x,y)&lt;4 〇26· The white light emitting diode according to item 18, wherein the second wavelength range is approximately 490 nm to 660 nm. 27. The white light emitting diode according to claim 1, wherein the chemical formula of the nitrogen oxide fluorescent material is SrSi2〇2N2:Eu. The white light emitting diode of claim 27, wherein the oxynitride phosphor has an excitation wavelength of about 350 nm to 480 nm ° 29 as described in claim 18 a white light emitting diode, wherein the chemical formula of the oxynitride fluorescent material is Si*2_2xSi04.yNy:Eu, and 0 &lt;x&lt;l,0&lt;y&lt;4 〇 1515
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