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TW200811092A - Novel crystalline modifications of 3-chloro-N2-[(1S)-1-methyl-2-(methylsulphonyl)ethyl]-N1-{2-methyl-4-[1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl]phenyl}phthalamide - Google Patents

Novel crystalline modifications of 3-chloro-N2-[(1S)-1-methyl-2-(methylsulphonyl)ethyl]-N1-{2-methyl-4-[1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl]phenyl}phthalamide Download PDF

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TW200811092A
TW200811092A TW96110660A TW96110660A TW200811092A TW 200811092 A TW200811092 A TW 200811092A TW 96110660 A TW96110660 A TW 96110660A TW 96110660 A TW96110660 A TW 96110660A TW 200811092 A TW200811092 A TW 200811092A
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ethyl
methyl
phenyl
decylamine
tetrafluoro
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TW96110660A
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Chinese (zh)
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Britta Olenik
Ruediger Fischer
Christian Funke
Lorna Elisabeth Davies
Gerhard Thielking
Sergiy Pazenok
Hiroto Harayama
Hayami Nakao
Michihiko Kawaguchi
Masanori Tohnishi
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Bayer Cropscience Ag
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Priority claimed from DE200610014491 external-priority patent/DE102006014491A1/en
Priority claimed from DE200610031647 external-priority patent/DE102006031647A1/en
Application filed by Bayer Cropscience Ag filed Critical Bayer Cropscience Ag
Publication of TW200811092A publication Critical patent/TW200811092A/en

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00Sulfones; Sulfoxides
    • C07C317/26Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C317/28Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton with sulfone or sulfoxide groups bound to acyclic carbon atoms of the carbon skeleton
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01NPRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF; BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES; PEST REPELLANTS OR ATTRACTANTS; PLANT GROWTH REGULATORS
    • A01N41/00Biocides, pest repellants or attractants, or plant growth regulators containing organic compounds containing a sulfur atom bound to a hetero atom
    • A01N41/02Biocides, pest repellants or attractants, or plant growth regulators containing organic compounds containing a sulfur atom bound to a hetero atom containing a sulfur-to-oxygen double bond
    • A01N41/10Sulfones; Sulfoxides

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  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Dentistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plant Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Zoology (AREA)
  • Environmental Sciences (AREA)
  • Pest Control & Pesticides (AREA)
  • Agronomy & Crop Science (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

The present invention relates to defined crystalline modifications of 3-chloro-N2-[(1S)-1-methyl-2-(methylsulphonyl)ethyl]-N1-{2-methyl-4-[1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl] phenyl}-phthalamide of the formula (A), processes for their preparation and their use in agrochemical preparations.

Description

200811092 九、發明說明: 【發明所屬之技術領域】 本發明係關於新穎之3-氯-N2-[(1S)-1 -曱基-2-(曱磺醯 基)乙基甲基-4-[l,2,2,2-四氟小(三氟甲基)乙基]苯 5 基卜5酞醯胺(參照以下CMP,cf·式(A))結晶變體、其製備 方法及其作為農業化學製品之用途。 , 【先前技術】200811092 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to novel 3-chloro-N2-[(1S)-1-indolyl-2-(indolyl)ethylmethyl-4- [l,2,2,2-tetrafluorosuccinyl (trifluoromethyl)ethyl]benzene 5 yl 5 decylamine (refer to the following CMP, cf. formula (A)) crystal modification, preparation method thereof and Used as an agricultural chemical. [Prior Art]

CMP於EP-A 1 006 107中經揭示為消旋物,且為未公 ίο 開之日本專利申請案JP 2005-239974之純鏡像異構物。CMP 可經其所述方法合成。進一步之方法敘述於國際專利申請 案 PCT/EP05/00894。 前述合成方法中,結晶變體IV之CMP (關於命名法 及特徵描述,參見以下進一步敘述)。該結晶變體屬亞穩狀 15 態。 B 各種結晶變體(多晶形態)活性物質之出現對實施製 備方法及發展配製物均實屬重要。從而,化合物之各種結 晶變體之相異非僅於外觀(晶癖)及硬度上,尚且於許多更 深入之物理化學性質上。穩定性、過濾、性、可溶性、吸濕 20 性、熔點、固態密度及流動性之相異處,對農作物處理配 方之品質及效率將產生可觀影響。預期結晶變體之出現及 數量,包括其物理化學性質目前尚屬不可能。尤以熱動力 學穩定度,及其投與活生物體後之不同表現,無法預先測 5 200811092 定。 【發明内容】 於化ΓΓ之目的係提供c Mp之新穎結晶變體,其由 於化子式之物理化學性質,可為㈣掌握。The CMP is disclosed as a racemate in EP-A 1 006 107, and is a pure image isomer of Japanese Patent Application No. 2005-239974, which is incorporated herein by reference. CMP can be synthesized by the methods described there. Further methods are described in International Patent Application PCT/EP05/00894. In the foregoing synthetic method, the CMP of the crystalline variant IV (for further naming and characterization, see further description below). The crystal modification is metastable. B The appearance of various crystalline variants (polymorphic forms) of active substances is important for the preparation of the preparation methods and the development of the formulations. Thus, the various crystallization variants of the compound differ not only in appearance (crystallinity) and hardness, but also in many more intensive physicochemical properties. Stability, filtration, properties, solubility, moisture absorption, melting point, solid density and fluidity will have a considerable impact on the quality and efficiency of crop processing formulations. It is currently not possible to expect the presence and amount of crystalline variants, including their physicochemical properties. In particular, the thermodynamic stability and its different performance after being administered to living organisms cannot be pre-measured 5 200811092. SUMMARY OF THE INVENTION The purpose of Yuhuan is to provide a novel crystalline variant of c Mp which can be mastered by the physicochemical properties of the chemical formula.

根據本發明,該目的可由CMAccording to the invention, the object can be achieved by CM

10 1510 15

為結晶變體達成。 體’以下 ^本㉟明係關於CMp之結晶變體τ,其特徵為具 U 1 2細a、> 2〇%相對強度)所载反射位置之χ_射線 末、、&射圖案。結晶變體1之粉末X·射線繞射圖案亦示 於圖、、、《曰曰變體1之x_射線粉末繞射圖案最強訊號(2 13.24、14.76°及 18.81。出現(每項±〇.2。)。 本發明亦係關於CMP之結晶變體π,其特徵為具有 於下表2 (2 theta、>20%相對強度)所載反射位置之尽射 線粉末繞射圖案。結晶變體11之粉末X-射線繞射圖案亦 theta)係相應於 19.42。、12.93。、19.91。、18,51。、14 39。、 示於圖2。結晶變體n之乂_射線粉末繞射圖案最強訊號(2 theta)係相應於 14.74。、10.29。、16.43。、23.89。、15.28。、 11·6Γ、15·84。及 18.50。出現(每項±0.2。)。 本發明亦係關於CMP之結晶變體ΙΠ,其特徵為具有 下表3 (2 theta、>20%相對強度)所載反射位置之X-射線 粉末繞射圖案。結晶變體III之粉末X-射線繞射圖案亦示 於圖3。結晶變體π之X-射線粉末繞射圖案最強訊號(2 20 200811092 theta)係相應於 21·84。、15·52。、9.50。、14·57。、13.43。、 20 25.79。、16.50。及 23.22。出現(每項±0.2。)。 所有粉末X-射線繞射數據均以下列參數獲得: 繞射儀:傳播(Transmission) 5Achieved for crystallized variants. The following is a crystallization of the CMp, which is characterized by having a U 1 2 fine a, > 2〇% relative intensity, and a 反射-ray end, & The powder X-ray diffraction pattern of the crystal modification 1 is also shown in the figure, ", the strongest signal of the x-ray powder diffraction pattern of the 曰曰 variant 1 (2 13.24, 14.76 ° and 18.81. appears (each item ± 〇 .2. The present invention is also directed to the CMP crystal modification π characterized by having a ray powder diffraction pattern at the reflection position of the following Table 2 (2 theta, > 20% relative intensity). The powder X-ray diffraction pattern of the body 11 is also corresponding to 19.42. 12.93. 19.91. 18,51. , 14 39. , shown in Figure 2. The crystallization of the crystalline variant n is the strongest signal (2 theta) corresponding to 14.74. 10.29. 16.43. 23.89. 15.28. , 11.6Γ, 15.84. And 18.50. Appears (±0.2 per item). The present invention is also directed to a CMP crystal modification ΙΠ characterized by having an X-ray powder diffraction pattern of the reflection position carried in Table 3 below (2 theta, > 20% relative intensity). The powder X-ray diffraction pattern of crystal modification III is also shown in Fig. 3. The strongest signal of the X-ray powder diffraction pattern of the crystal modification π (2 20 200811092 theta) corresponds to 21·84. 15.52. , 9.50. , 14.57. 13.43. , 20 25.79. 16.50. And 23.22. Appears (±0.2 per item). All powder X-ray diffraction data are obtained with the following parameters: Diffraction: Transmission 5

單光儀:曲線鍺(Π1) (Curved Germanium (111)) 波長:1.540598 Cu 偵測器:線性PSD ( Linear PSD ) 掃描模式:傳播/移動PSD/固定歐米茄(omega) 掃描型態:2 theta :歐米茄 2 theta 數據:±0·2ο 10 200811092 表iSpectrometer: Curve 锗 (Π1) (Curved Germanium (111)) Wavelength: 1.540598 Cu Detector: Linear PSD (Linear PSD) Scan Mode: Propagation / Mobile PSD / Fixed Omega Scanning Type: 2 theta : Omega 2 theta data: ±0·2ο 10 200811092 Table i

2 theta /° 相對強度1 相對強度2 9.31 弱 38 10.96 弱 35 11.54 弱 26 1L80 弱 38 12.93 極強 95 13.24 強 62 14.39 強 67 14/76 中 59 15.44 弱 21 16.09 中 44 16.75 中 51 16.94 中 48 17.46 弱 26 17.79 中 41 8 2008110922 theta /° Relative strength 1 Relative strength 2 9.31 Weak 38 10.96 Weak 35 11.54 Weak 26 1L80 Weak 38 12.93 Extremely strong 95 13.24 Strong 62 14.39 Strong 67 14/76 Medium 59 15.44 Weak 21 16.09 Medium 44 16.75 Medium 51 16.94 Medium 48 17.46 Weak 26 17.79 of 41 8 200811092

17.96 中 44 18.51 強 80 18.81 中 56 19.42 極強 100 19.63 中 45 19.91 極強 89 20.78 弱 37 20.99 弱 25 21·88 弱 37 22.26 弱 35 22.74 弱 23 23.47 中 43 23.89 中 44 24.23 弱 28 25.20 弱 28 26.24 弱 28 9 200811092 26.96 弱 36 2738 弱 25 28.04 弱 25 28.25 弱 23 28.88 弱 24 29.40 弱. 2117.96 Medium 44 18.51 Strong 80 18.81 Medium 56 19.42 Extremely strong 100 19.63 Medium 45 19.91 Extremely strong 89 20.78 Weak 37 20.99 Weak 25 21·88 Weak 37 22.26 Weak 35 22.74 Weak 23 23.47 Medium 43 23.89 Medium 44 24.23 Weak 28 25.20 Weak 28 26.24 Weak 28 9 200811092 26.96 Weak 36 2738 Weak 25 28.04 Weak 25 28.25 Weak 23 28.88 Weak 24 29.40 Weak. 21

^訊號強度之> 60至80%,「極強」應理解為頻譜中最強訊號強 度之>80至100%。「弱」較優應理解為頻譜中最強訊號20至 40%之強度,「中」應理解為頻譜中最強訊號強度之> 40至60%, 5 「強」應理解為頻譜中最強訊號強度之>60至80%,「極強」 應理解為頻譜中最強訊號強度之>80至100%。 2頻譜中最強訊號之相關強度,其任意定義為100。 10 200811092^Signal intensity > 60 to 80%, "extremely strong" should be understood as >80 to 100% of the strongest signal strength in the spectrum. "Weak" is better understood as the intensity of the strongest signal in the spectrum of 20 to 40%. "Medium" should be understood as the strongest signal strength in the spectrum > 40 to 60%. 5 "Strong" should be understood as the strongest signal strength in the spectrum. >60 to 80%, "extremely strong" should be understood as >80 to 100% of the strongest signal strength in the spectrum. 2 The correlation strength of the strongest signal in the spectrum, which is arbitrarily defined as 100. 10 200811092

表2 2 theta /° 相對強度1 相對強度2 6.34 弱 22 8.70 弱 33 10.29 強 71 10.84 弱‘ 39 11.61 弱 40 12.17 弱 30 13.70 弱 21 14.13 弱 32 14.74 極強 100 15.28 中 51 15.84 中 42 16.43 中 60 16.94 弱 30 17.37 弱 31 17.50 弱 38 π 200811092Table 2 2 theta /° relative intensity 1 relative intensity 2 6.34 weak 22 8.70 weak 33 10.29 strong 71 10.84 weak ' 39 11.61 weak 40 12.17 weak 30 13.70 weak 21 14.13 weak 32 14.74 extremely strong 100 15.28 medium 51 15.84 medium 42 16.43 medium 60 16.94 Weak 30 17.37 Weak 31 17.50 Weak 38 π 200811092

17.79 弱 31 17.95 弱 27 18.50 中 46 18.96 弱 23 20.63 弱 27 20.90 弱 35 21.06 弱 38 22.48 弱 35 22.73 弱 37 23.05 弱 25 23.89 中 53 24.17 弱 25 25.57 弱 25 「弱」較優理解為頻譜中最強訊號強度之20至40%,「中」 理解為頻譜中最強訊號強度之>40至60%,「強」理解為頻譜 中最強訊號強度之60至80%,「極強」理解為頻譜中最強訊 號強度之>80至100%。 5 2頻譜中最強訊號之相關強度,其任意定義為100。 12 200811092 表317.79 Weak 31 17.95 Weak 27 18.50 Medium 46 18.96 Weak 23 20.63 Weak 27 20.90 Weak 35 21.06 Weak 38 22.48 Weak 35 22.73 Weak 37 23.05 Weak 25 23.89 Of 53 24.17 Weak 25 25.57 Weak 25 Weakness is better understood as the strongest signal in the spectrum. 20 to 40% of the intensity, "middle" is understood to be 40 to 60% of the strongest signal strength in the spectrum, and "strong" is understood to be 60 to 80% of the strongest signal strength in the spectrum. "Extremely strong" is understood to be the strongest in the spectrum. Signal strength > 80 to 100%. 5 2 The correlation strength of the strongest signal in the spectrum, which is arbitrarily defined as 100. 12 200811092 Table 3

2 theta/。 相對強度1 相對強度2 9.50 中 58 13.43 弱 20 14.57 中 44 15.52 中 46 1638 強 64 16.50 弱 29 18.24 弱 36 19.11 弱 30 19.92 弱 27 21,84 弱 27 23.22 極強 100 23.88 弱 32 2414 弱 22 25.79 弱 26 13 200811092 25.98 弱 33 29.58 弱 24 1「弱」較優理解為頻譜中最強訊號強度之20至40%,「中」 理解為頻譜中最強訊號強度之>40至60%,「強」理解為頻譜 中最強訊號強度之60至80%,「極強」理解為頻譜中最強訊 號強度之>80至100%。 2頻譜中最強訊號之相關強度,其任意定義為100。 已知之CMP之結晶變體IV之特徵為具有下表4(2 theta、>20%相對強度)所載反射位置之X-射線粉末繞射 圖案。結晶變體IV之粉末X-射線繞射圖案亦示於圖4。 表4 2 theta/0 相對強度1 相對強度2 5·16 中 42 6.18 中 52 6.52 強 64 7.00 強 64 7.37 中 43 8.63 中 57 14 2008110922 theta/. Relative strength 1 Relative intensity 2 9.50 Medium 58 13.43 Weak 20 14.57 Medium 44 15.52 Medium 46 1638 Strong 64 16.50 Weak 29 18.24 Weak 36 19.11 Weak 30 19.92 Weak 27 21,84 Weak 27 23.22 Extremely strong 100 23.88 Weak 32 2414 Weak 22 25.79 Weak 26 13 200811092 25.98 Weak 33 29.58 Weak 24 1 "Weak" is better understood as 20 to 40% of the strongest signal strength in the spectrum. "Medium" is understood as the strongest signal strength in the spectrum > 40 to 60%, "strong" understanding For the 60 to 80% of the strongest signal strength in the spectrum, "extremely strong" is understood to be >80 to 100% of the strongest signal strength in the spectrum. 2 The correlation strength of the strongest signal in the spectrum, which is arbitrarily defined as 100. The known CMP crystal modification IV is characterized by an X-ray powder diffraction pattern having reflection positions carried by the following Table 4 (2 theta, > 20% relative intensity). The powder X-ray diffraction pattern of crystal modification IV is also shown in FIG. Table 4 2 theta/0 relative intensity 1 relative intensity 2 5·16 medium 42 6.18 medium 52 6.52 strong 64 7.00 strong 64 7.37 medium 43 8.63 medium 57 14 200811092

9.00 弱 35 9.85 弱 39 10.34 弱 38 10.58 弱 39 11.59 弱 32 12.27 中 48 1238 強 63 12.84 弱 35 13.05 極強 88 1339 弱 31 13.48 弱 37 13.66 中 47 14.06 弱 31 14,57 中 57 14.99 弱 38 15.97 極強 100 15 2008110929.00 weak 35 9.85 weak 39 10.34 weak 38 10.58 weak 39 11.59 weak 32 12.27 medium 48 1238 strong 63 12.84 weak 35 13.05 extremely strong 88 1339 weak 31 13.48 weak 37 13.66 medium 47 14.06 weak 31 14,57 medium 57 14.99 weak 38 15.97 pole Strong 100 15 200811092

16.32 弱 37 16.59 弱 37 16.85 中 44 17.28 中 42 17.46 弱 37 17.75 中 52 18.23 中 50 18.64 強 70 18.86 弱 29 19.77 強 66 20.19 弱 34 20.54 弱 38 21.03 弱 30 2135 中 42 21.63 弱 31 22.11 弱 29 16 20081109216.32 Weak 37 16.59 Weak 37 16.85 Medium 44 17.28 Medium 42 17.46 Weak 37 17.75 Medium 52 18.23 Medium 50 18.64 Strong 70 18.86 Weak 29 19.77 Strong 66 20.19 Weak 34 20.54 Weak 38 21.03 Weak 30 2135 Medium 42 21.63 Weak 31 22.11 Weak 29 16 200811092

22.36 弱 38 22.47 中 47 22.55 弱 33 23.14 弱 26 2336 弱 26 23.93 弱 24 24.30 弱 32 24.88 中 41 25.09 弱 22 25.50 弱 20 25.95 弱 22 26.20 弱 22 26.58 弱 28 27.16 弱 26 28.87 弱 21 「弱」較優應理解為頻譜中最強訊號20至40%之強度,「中」 應理解為頻譜中最強訊號強度之>40至60%,「強」應理解為 17 200811092 頻譜中最強訊號強度之>60至80%,「極強」應理解為頻譜中 最強訊號強度之> 80至100%。 2頻譜中最強訊號之相關強度,其任意定義為100。 5 本發明之CMP結晶變體亦具有IR光譜學特性。IR頻 譜包含以下列於表5 (結晶變體I)、表6 (結晶變體II) 及表7 (結晶變體III)之譜帶最高點(於德國不來梅市布 除魯克區以FTIR張量(Tensor) 37測量,使用固態用之 金門(Golden Gate) ATR 單位): ίο 表5 波數[cm1】 波數【cm_1J 波數【cm1】 波數【cm1] 3268 1415 981 628 3022 1301 928 585 2937 1277 867 562 2839 1249 828 1630 1232 814 1591 1206 804 1568 1168 751 1529 1131 728 1506 1101 708 1442 1024 645 18 200811092 表6 波數【cm1] 波數[em·1】 波數【cm1】 波數丨cii^J 3235 1447 1028 728 3072 1415 1011 709 2983 1386 980 690 2934 1292 968 633 1652 1278 888 628 1634 1211 874 586 1589 1167 831 556 1569 1142 813 1538 1131 783 1520 1105 752 表7 波數【cm1] 波數【cm Μ 波數丨cm1】 波數丨cm Ί 3268 1381 1026 752 3024 1306 1007 728 2931 1276 979 707 1668 1251 906 660 1630 1219 884 640 1589 1204 875 604 19 200811092 1570 U71 860 588 1537 1134 831 1448 1113 820 1415 1097 807 > 已知之CMP之結晶變體IV亦可以IR光譜學描述 特性。IR頻譜包含以下列於表8之譜帶最高點(於德國不 來梅市布魯克區以FTIR張量(Tensor) 37測量,使用 5 固態用之金門(Golden Gate) ATR單位): 表8 波數【cnf1] 波數[em1】 波數丨cm1】 3250 1210 830 2934 1167 814 1652 1137 762 1592 1101 752 1568 1029 728 1524 1012 709 1444 979 644 20 200811092 1417 929 625 1293 908 587 1278 859 562 本發明之結晶變體亦可以萊曼(Raman)光譜學描述 特性。譜帶最高點(於德國不來梅市布魯克區以萊曼 , R100/S測量)列於表9(結晶變體I)、表10(結晶變體II) 及表11 (結晶變體III): 5 表9 波數【cm 1 波數【cm1] 波數丨cm 4 波數【cm1】 3069 1296 802 393 3021 1264 765 357 2990 1238 752 346 2931 1223 740 330 2888 1205 728 306 2741 1197 709 284 2552 1171 702 259 1666 1157 688 230 1653 1141 645 217 21 20081109222.36 Weak 38 22.47 Medium 47 22.55 Weak 33 23.14 Weak 26 2336 Weak 26 23.93 Weak 24 24.30 Weak 32 24.88 Medium 41 25.09 Weak 22 25.50 Weak 20 25.95 Weak 22 26.20 Weak 22 26.58 Weak 28 27.16 Weak 26 28.87 Weak 21 Weak 21 It should be understood that the intensity of the strongest signal in the spectrum is 20 to 40%, "middle" should be understood as the highest signal intensity in the spectrum > 40 to 60%, and "strong" should be understood as 17 of the strongest signal strength in the spectrum of 200811092 > 60 To 80%, "extremely strong" should be understood as 80 to 100% of the strongest signal strength in the spectrum. 2 The correlation strength of the strongest signal in the spectrum, which is arbitrarily defined as 100. 5 The CMP crystal modification of the present invention also has IR spectroscopy properties. The IR spectrum contains the highest bands in Table 5 (Crystalline Variation I), Table 6 (Crystal Variation II) and Table 7 (Crystal Variation III) (in the FTIR section of the Brecker District of Bremen, Germany) Measurement (Tensor) 37 measurement, using the Golden Gate ATR unit for solid state): ίο Table 5 Wave number [cm1] Wave number [cm_1J Wave number [cm1] Wave number [cm1] 3268 1415 981 628 3022 1301 928 585 2937 1277 867 562 2839 1249 828 1630 1232 814 1591 1206 804 1568 1168 751 1529 1131 728 1506 1101 708 1442 1024 645 18 200811092 Table 6 Wave number [cm1] Wave number [em·1] Wave number [cm1] Wave number 丨cii 。 。 。 。 。 。 。 。 。 。 Μ Wavenumber 丨 cm1] Wavenumber 丨 cm Ί 3268 1381 1026 752 3024 1306 1007 728 2931 1276 979 707 1668 1251 906 660 1630 1219 884 640 1589 1204 875 604 19 200811092 1570 U71 860 588 1537 1134 831 1448 1113 820 1415 109 7 807 > The known CMP crystal modification IV can also characterize IR spectroscopy. The IR spectrum contains the highest point in the band below in Table 8 (measured in FTIR tensor (Tensor 37) in the Brooke district of Bremen, Germany, using the Golden Gate ATR unit for 5 solid state): Table 8 Wavenumber [cnf1 Wavenumber [em1] Wavenumber 丨 cm1] 3250 1210 830 2934 1167 814 1652 1137 762 1592 1101 752 1568 1029 728 1524 1012 709 1444 979 644 20 200811092 1417 929 625 1293 908 587 1278 859 562 The crystal variant of the invention is also Characteristics can be described by Raman spectroscopy. The highest point of the band (measured by Lehman, R100/S in Brooke, Bremen, Germany) is shown in Table 9 (Crystalline Variation I), Table 10 (Crystal Variation II) and Table 11 (Crystal Variation III): 5 Table 9 Wavenumber [cm 1 wave number [cm1] wave number 丨 cm 4 wave number [cm1] 3069 1296 802 393 3021 1264 765 357 2990 1238 752 346 2931 1223 740 330 2888 1205 728 306 2741 1197 709 284 2552 1171 702 259 1666 1157 688 230 1653 1141 645 217 21 200811092

1632 1132 627 209 1612 1108 590 194 1591 1063 568 155 1567 984 539 92 1532 963 530 1505 929 505 1453 897 487 1408 875 465 1386 853 445 1318 818 410 表ίο 波數【cm1】 波數[cm1] 波數【cm1】 波數[cm1】 3077 1414 934 507 3007 1381 904 475 2978 1319 877 446 2932 1297 814 432 22 2008110921632 1132 627 209 1612 1108 590 194 1591 1063 568 155 1567 984 539 92 1532 963 530 1505 929 505 1453 897 487 1408 875 465 1386 853 445 1318 818 410 Table ίο Wavenumber [cm1] Wavenumber [cm1] Wavenumber [cm1 Wavenumber [cm1] 3077 1414 934 507 3007 1381 904 475 2978 1319 877 446 2932 1297 814 432 22 200811092

2890 1259 772 400 2752 1210 754 347 2557 1168 699 330 1650 1133 651 306 1614 1106 627 294 1589 1095 588 276 1569 1064 555 228 1514 984 541 181 1462 967 527 99 表11 波數【cm·1】 波數丨cm 1 波數丨cm1】 波數丨cnf1】 3077 1455 1159 876 2986 1414 1136 852 2932 1401 1098 821 2743 1385 1070 806 2600 1365 1042 774 23 200811092 1669 1321 985 754 1641 1293 955 742 1617 1256 923 702 1589 1236 906 1541 1206 894 已知之結晶變體IV亦可以萊曼(Raman)光譜學描 述特性。譜帶最高點(於德國不來梅市布魯克區以萊曼 R100/S測量)列於表12: 表12 波數[cm 1 波數丨cm1】 波數丨cm1】 波數丨cm1】 3078 1321 908 445 2980 1298 875 419 2935 1264 810 399 1658 1211 765 346 1615 1172 753 292 1592 1135 740 224 1568 1107 700 178 24 200811092 1525 -—---- 1065 644 100 1455 ~——---- 1003 589 —--^ 1409 ——----- 953 534 —--—^一 1382 930 477 -------_ --- 韓變==體1之CMP令人料地穩定,即使長期存放亦不 變為,、匕結晶變體。更有甚者,結晶變體I於空氣中 =2結;變;甚多。基於該等原因’其特別適於固 二,衣物衣。0。由於其穩定度,其配製物具有所需之耐 9』限。結晶變體1使穩定之CMP S1態製品得以固定日 標明確之方式製備。 U疋且目 結晶變體I之CMP可包含下列方法:2890 1259 772 400 2752 1210 754 347 2557 1168 699 330 1650 1133 651 306 1614 1106 627 294 1589 1095 588 276 1569 1064 555 228 1514 984 541 181 1462 967 527 99 Table 11 Wavenumber [cm·1] Wavenumber 丨 cm 1 Wavenumber 丨 cm1] Wavenumber 丨cnf1] 3077 1455 1159 876 2986 1414 1136 852 2932 1401 1098 821 2743 1385 1070 806 2600 1365 1042 774 23 200811092 1669 1321 985 754 1641 1293 955 742 1617 1256 923 702 1589 1236 906 1541 1206 894 The known crystal modification IV can also characterize Raman spectroscopy. The highest point of the band (measured by Lehman R100/S in Brooke, Bremen, Germany) is shown in Table 12: Table 12 Wavenumber [cm 1 Wavenumber 丨 cm1] Wave Number 丨 cm1] Wave Number 丨 cm1] 3078 1321 908 445 2980 1298 875 419 2935 1264 810 399 1658 1211 765 346 1615 1172 753 292 1592 1135 740 224 1568 1107 700 178 24 200811092 1525 -—---- 1065 644 100 1455 ~——---- 1003 589 —--^ 1409 ——----- 953 534 —--—^1382 930 477 —------_ --- Han dynaming == The CMP of body 1 is unsatisfactorily stable, even if it is stored for a long time. For, 匕 crystallized variants. What's more, the crystal modification I is in the air = 2 knots; For these reasons, it is particularly suitable for solid clothes and clothing. 0. Due to its stability, its formulation has the required tolerance. Crystalline variant 1 was prepared in such a manner that the stabilized CMP S1 article was fixed in a fixed manner. The CMP of the crystal modification I can include the following methods:

方法A 播J!結^體11或1v^cmp _於至少—種非極性有 、命蜊並加熱。或者,將結晶變體II或IV之CMP懸浮於 f ^。種非極性有機_及至少—種極性溶劑之混合物並 σ,、、、。於再結晶完成後,將沉澱物分離並乾燥。 較優之常財極性有機溶劑為分枝、直鏈 化合物’更優為直鏈或環狀之碳氫化合物,特優為正戍= 正己烷、正歧、環⑽、正辛烧、正 為正辛烧或歧。 ^ 25 15 200811092 酯類(諸如乙酸曱酯、乙酸乙酯或乙酸丙酯)、腈類(諸 如乙腈、丁腈或苯甲腈)、醚類(諸如二甲氧基乙烷、二甘二 甲醚、THE、二口等烷、NMP、磺醯烷或〇]\4人八)、醇類(諸如 曱醇,乙醇或異丙醇)或乙酸為可用較優之極性溶劑。乙酸乙 5 酯或二曱氧基乙烷為可用更優者,特優者為乙酸乙酯。 如使用至少一種有機非極性溶劑及至少一種極性溶劑 之混合物,混合之比例(有機溶劑:極性溶劑、v/v)—般均係自 I 1000:1至30:1,更優為500:1至25:1,特優為400」至20:1 而極優為300:1至15:1。 1〇 所用結晶變體IV之CMP較優濃度為10至500 g/;l,更 優濃度為25至300 g/Ι ,而極優濃度為50至250g/l。 再結晶之持續期長短相差甚多。較優為1至24小時,更優 為2至12小時,而特優為4至8小時。 再結晶可於甚廣之溫度範圍下進行。較優為於溶劑混合 15 物之沸點回流溫度80-150。€下進行,較優為9O-120QC,而 | 更優為 100-120°C。 如溶劑混合物之沸點位於100°C以下(己烷、環己烷), 再結晶係於加壓下(1-8巴)進行。 結晶變體I之CMP可添加入反應混合物為種子材料以 2〇 增進其產出或縮短所需之再結晶時間。Method A broadcasts J! junction body 11 or 1v^cmp _ at least - a kind of non-polar, sputum and heat. Alternatively, the CMP of the crystal modification II or IV is suspended in f^. a mixture of non-polar organic _ and at least a polar solvent and σ, , , , . After the recrystallization is completed, the precipitate is separated and dried. The preferred polar organic solvent is a branched or linear compound, which is more preferably a linear or cyclic hydrocarbon. It is preferably n-hexane, n-hexane, ortho-ruthenium, ring (10), positively pungent, positive It is burning or disagreeting. ^ 25 15 200811092 Esters (such as decyl acetate, ethyl acetate or propyl acetate), nitriles (such as acetonitrile, butyronitrile or benzonitrile), ethers (such as dimethoxyethane, diethylene glycol) Ether, THE, two, etc., alkane, NMP, sulfonane or oxime], an alcohol (such as decyl alcohol, ethanol or isopropanol) or acetic acid is a preferred polar solvent. Ethyl acetate or dimethoxyethane is preferred, and ethyl acetate is preferred. If a mixture of at least one organic non-polar solvent and at least one polar solvent is used, the mixing ratio (organic solvent: polar solvent, v/v) is generally from I 1000:1 to 30:1, more preferably 500:1. Up to 25:1, excellent for 400" to 20:1 and excellent for 300:1 to 15:1. 1〇 The crystallization of the crystal modification IV used has a preferred concentration of 10 to 500 g/l, a higher concentration of 25 to 300 g/Ι, and a superior concentration of 50 to 250 g/l. The duration of recrystallization is quite different. It is preferably from 1 to 24 hours, more preferably from 2 to 12 hours, and particularly preferably from 4 to 8 hours. Recrystallization can be carried out over a wide range of temperatures. It is preferred to have a boiling point reflux temperature of 80-150 in a solvent mixture. Under the €, the best is 9O-120QC, and the better is 100-120 °C. For example, the boiling point of the solvent mixture is below 100 ° C (hexane, cyclohexane), and recrystallization is carried out under pressure (1-8 bar). The CMP of the crystal modification I can be added to the reaction mixture as a seed material to increase its yield or shorten the required recrystallization time.

方法B 步驟1 26 200811092 將結晶變體ιν之CMP於非極性有機溶劑及乙酸乙醋 之混合物中加熱。 可用之較優非極性有機溶劑為分枝、直鏈或環狀碳氫化 合物,更優為直鏈或環狀碳氫化合物,特優為正祕,正己 5 烧,環己烧,正>庚烧,正辛烧,而極優為環己烧或正己炫。 如有機溶劑(OS)與乙酸乙酯(EA)之混合物用於再結 晶,邊二溶劑較優之混合比為(os:EA,v/v) 至1:2更 • 優為500:1至1:1,特優為200:1至1:1,而極優為100:1至 2·1。根據本發明以方法B製得之結晶變體1再結晶較優為 10 於正己烷及乙酸乙酯之混合物内進行。 結晶變體IV之CMPis較優之可用濃度為1〇至500 §化 浪度為25至300 g/l ,而極優濃度為5〇t〇2〇〇g/1。再 結晶之持縯期長短相差甚多。較優為〇 5至 24小時,更優 為1至12小時,而特優為2至8小時。 15 、本發明之方法B步驟1可進行於甚廣之溫度範圍。較優 # 為㈣點未超過100°C,可於回流溫度下溶劑混合物之沸點 進行,如溶劑混合物之沸點超過1〇〇。〇,可於6〇艺至^⑽它 進行,較優為於7(TC至100艺,而更優為7(rc至9〇t。 結晶變體I之CMP可添加入反應混合物為種 2〇 增進其產出或縮短所需之再結晶時間。 ;碎以 於其之後,將該批冷卻,並濾出及乾燥產物。 27 200811092 步驟2 將自步驟1取得之該物質於水中加熱攪拌,冷卻並濾 出。隨後將該物質乾燥。 將自步驟1取得之該物質導入水中,成為濃度10至500 5 g/Ι之懸浮液,較優為20至250 g/Ι,更優為50至200 g/Ι。 本發明方法B之步驟2可進行於甚廣之溫度範圍(上限 為水之沸點)。較優為於70°C以上進行,更優為80°C以上, 藝而特優為於沸水(l〇〇°C)。 步驟2之持續期長短相差甚多。步驟2較優為進行於0.5 1〇 與24小時之間,更優為1與12小時之間,而特優為2與6 小時之間。 於步驟2已進行後,產物較優係經過濾並隨後乾燥獲得 (例如以乾燥烘箱或使用乾燥劑之乾燥器,諸如P205或 CaCl2)。 15Method B Step 1 26 200811092 The CMP of the crystal modification ιν is heated in a mixture of a non-polar organic solvent and ethyl acetate. The preferred non-polar organic solvent is a branched, linear or cyclic hydrocarbon, more preferably a linear or cyclic hydrocarbon, especially excellent as a secret, a positive 5 burn, a cyclohexane, a positive > Geng is burning, it is burning, and it is extremely good for the ring to burn or to be dazzling. For example, a mixture of organic solvent (OS) and ethyl acetate (EA) is used for recrystallization. The preferred mixing ratio of the two solvents is (os: EA, v/v) to 1:2 and more preferably 500:1 to 1:1, the excellent is 200:1 to 1:1, and the excellent is 100:1 to 2.1. The crystal modification 1 obtained by the method B according to the present invention is preferably recrystallized in a mixture of n-hexane and ethyl acetate. The CMPis of the crystalline variant IV is preferably used at a concentration of from 1 to 500 § with a wave of 25 to 300 g/l and a very good concentration of 5 〇t 〇 2 〇〇 g/1. There are many differences in the duration of recrystallization. Preferably, it is 5 to 24 hours, more preferably 1 to 12 hours, and superior is 2 to 8 hours. 15. Step 1 of Method B of the present invention can be carried out over a wide temperature range. Preferably, the (four) point does not exceed 100 ° C, and the boiling point of the solvent mixture can be carried out at a reflux temperature, for example, the boiling point of the solvent mixture exceeds 1 Torr. 〇, can be carried out from 6 〇 to ^ (10), preferably 7 (TC to 100 art, and more preferably 7 (rc to 9 〇t.) Crystallization variant I CMP can be added to the reaction mixture as species 2 〇 increase its output or shorten the required recrystallization time. After crushing, the batch is cooled, and the product is filtered off and dried. 27 200811092 Step 2 The material obtained in step 1 is heated and stirred in water. Cooling and filtering out. The material is then dried. The material obtained in step 1 is introduced into water to a suspension having a concentration of 10 to 500 5 g/Ι, preferably 20 to 250 g/Ι, more preferably 50 to 200 g / Ι. Step 2 of the method B of the invention can be carried out in a wide temperature range (the upper limit is the boiling point of water), preferably above 70 ° C, more preferably above 80 ° C, and excellent For boiling water (l〇〇°C), the duration of step 2 varies greatly. Step 2 is better than 0.5 1〇 and 24 hours, more preferably between 1 and 12 hours, and excellent Between 2 and 6 hours. After step 2 has been carried out, the product is preferably filtered and subsequently dried (for example in a drying oven or using a desiccant) Dryer, such as P205, or CaCl2). 15

, 方法C 結晶變體II之CMP可經下列方法獲得: 結晶變體IV之CMP於水中以回流溫度下加熱。隨後將 該物質乾燥。 2〇 再結晶可進行於甚廣之溫度範圍(上限視水之沸點而 定)。再結晶反應較優進行於40°C以上,更優為60°C以 上,而特優為於沸水(100°C)進行。 28 200811092 再結晶之持續期長短相差甚多。步驟 俾 至24小時之間,更優為i至12小時 ^進仃於0.5 小時之間。 向知優為1至6 為進行本發明之方法C,將結晶變體 中成為濃度ω至500 g/1之懸浮液,較 p導入f 優為 50 至 200 g/l。 至 250g/l,更Method CMP of Crystalline Variant II can be obtained by the following method: CMP of Crystalline Variant IV is heated in water at reflux temperature. The material is then dried. 2〇 Recrystallization can be carried out over a wide temperature range (the upper limit depends on the boiling point of water). The recrystallization reaction is preferably carried out at 40 ° C or higher, more preferably at 60 ° C or higher, and particularly preferably at boiling water (100 ° C). 28 200811092 The duration of recrystallization is quite different. Step 俾 Between 24 hours, preferably i to 12 hours ^ 仃 between 0.5 hours. To the method of the present invention, the method C is carried out, and the crystal modification is made into a suspension having a concentration of ω to 500 g/1, which is preferably 50 to 200 g/l as compared with p. To 250g/l, more

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方法D 結晶變體ΠΙ之CMP可經下列方法獲得: 將結晶變體IV之CMP詈於非;1¾ 士 n 入你…#、, 置於有機溶劑與醇類之混 口物,’亚將所形成之沉澱物以適當之已知方法分離, 如過濾分離。 可用較優之非極性有機溶劑(os)為分枝或直鏈碳氮化 :物,更優為直鏈碳氫化合物,特優為正錢、正己烧、正 庚烷、正辛烷,而極優為正己烷。 1可用#乂叙之醇類(AL)為分枝或直鏈具二至五個碳原子 之醇更優為乙醇、正丙醇、異丙醇、正丁醇、異丁醇或三 級丁醇,特優為正丙醇。 更ic之再結晶係進行於正己烧與正丙醇之混合物内。 用於再結晶之溶劑可用較優之混合比(OS:AL、v/v)為200:1 至!·2,更優為100:1至1],特優為20:1至I],而極優為 自 5:1 至 1:1 。 再= 曰可於甚廣之溫度範圍進行,較優於70-130。€。 再、、Ό s曰之持績期長短相差甚多。較優為,加熱起初作用 29 200811092 於回流溫度下,隨後則不以回流溫度。回流溫度下加熱一般 進行5分鐘至6小時,較優為5分鐘至2小時,而更優為 10至60分鐘。後續之不依回流溫度加熱一般進行10分鐘至 6小時,較優為20分鐘至3小時,更優為30分鐘至2小 5 時。之後,再容許結晶溶液不加熱靜置直至再結晶之材料沉 澱為止。該靜置狀態一般持續1至48小時,較優為3至24 小時,更優為6至18小時。 • 為本發明之方法D,結晶變體IV之CMP導入之濃度 為10至500 g/Ι,較優為20至250 §/1,更優為50至200 §/卜 1〇 下列實施例示範本發明,惟本發明不僅限於此。下列實 施例所用之溶劑系統為特優者。 【實施方式】 製備實施例1 (方法A) 15 CMP之結晶變體I之獲得,係將自已知合成方法所取得 p 結晶變體IV之CMP,懸浮於正辛烷/乙酸乙酯(100:lv/v), 濃度165g/l,並於115至120QC攪拌六小時。之後,產物以 過濾及真空乾燥分離。獲得熔點168-170QC,含90至95%結 晶變體I之物質,97至99%之產率。 20 製備實施例2 (方法A) CMP之結晶變體I之獲得,係將經已知合成方法取得 之結晶變體IV之CMP懸浮於正辛烷,濃度147 g/Ι,並於 115至120QC攪拌六小時。之後,沉澱物以過濾及真空乾燥 30 200811092 分離。所獲彿點168_17〇〇c之cmp之結晶變體I產率97至 99% (結晶變體!之比例9〇至95%)。 製備貫施例3 (方法b) CMP之結晶變體I之獲得,係將自已知合成方法取得之 I口日日、欠體IV之CMP之己烧/乙酸乙酯(3:lv/v),濃度102 g/Ι ’於80-90。〇擾拌3小時。之後,將該批冷卻,並將產物 以吸引濾出並乾燥。將所獲該物質於水中濃度129 g/1,於回 流溫度下攪拌約3小時,冷卻,以吸引濾出並以水充份潤 濕。最後’以P2〇5之乾燥器乾燥。獲得熔點171°C之物質。 製備實施例4 (方法B) CMP之結晶變體j之獲得,係將自已知合成方法取得之 結曰曰1:體IV之CMP’於己燒/乙酸乙酉旨(3:lv/v),濃度83 15Method D Crystallization of the ruthenium CMP can be obtained by the following method: CMP of the crystal modification IV is immersed; 13⁄4 士 n into your ... #,, placed in a mixture of organic solvents and alcohols, 'Aya The precipitate formed is separated by a suitable known method, such as filtration. A preferred non-polar organic solvent (os) can be used as a branched or linear carbonitride: more preferably a linear hydrocarbon, especially a positive, positive, n-heptane, n-octane, and Excellent is n-hexane. 1 Available alcohols (AL) are branched or linear alcohols having two to five carbon atoms, preferably ethanol, n-propanol, isopropanol, n-butanol, isobutanol or tertiary butyl Alcohol, especially excellent in n-propanol. The recrystallization of more ic is carried out in a mixture of n-hexane and n-propanol. Solvents for recrystallization can be used with a preferred mixing ratio (OS:AL, v/v) of 200:1 to! · 2, better 100:1 to 1], excellent for 20:1 to I], and excellent for 5:1 to 1:1. Then = 曰 can be carried out in a wide temperature range, better than 70-130. €. Moreover, the length of the performance period of 、 曰 相 is quite different. Preferably, the heating initially acts 29 200811092 at the reflux temperature and then at the reflux temperature. The heating at the reflux temperature is usually carried out for 5 minutes to 6 hours, preferably 5 minutes to 2 hours, and more preferably 10 to 60 minutes. Subsequent heating without reflux temperature is generally carried out for 10 minutes to 6 hours, preferably 20 minutes to 3 hours, more preferably 30 minutes to 2 hours 5 hours. Thereafter, the crystallization solution is allowed to stand still without heating until the recrystallized material is precipitated. The resting state generally lasts from 1 to 48 hours, preferably from 3 to 24 hours, more preferably from 6 to 18 hours. • For the method D of the present invention, the crystallization of the crystal modification IV is carried out at a concentration of 10 to 500 g/Ι, preferably 20 to 250 §/1, more preferably 50 to 200 §/b 1 〇 The invention is not limited to this invention. The solvent system used in the following examples is a preferred one. [Examples] Preparation Example 1 (Method A) 15 CMP crystal modification I was obtained by suspending CMP of p crystal modification IV obtained by a known synthesis method in n-octane/ethyl acetate (100: Lv/v), concentration 165 g/l, and stirred at 115 to 120 QC for six hours. Thereafter, the product was separated by filtration and vacuum drying. A material having a melting point of 168-170 QC, containing 90 to 95% of the crystalline variant I, is obtained in a yield of 97 to 99%. 20 Preparation Example 2 (Method A) Crystallization variant I of CMP was obtained by suspending CMP of crystal modification IV obtained by a known synthesis method in n-octane at a concentration of 147 g/Ι and at 115 to 120 QC. Stir for six hours. Thereafter, the precipitate was separated by filtration and vacuum drying 30 200811092. The crystal modification I yield of the obtained clp of 168_17〇〇c was 97 to 99% (the ratio of crystal modification! 9〇 to 95%). Preparation of Example 3 (Method b) The crystallization of Crystallization I of CMP was obtained by a known synthesis method, and the CMP of the CMP was obtained from the known synthesis method (3: lv/v). , concentration 102 g / Ι ' at 80-90. Mix and smash for 3 hours. Thereafter, the batch was cooled and the product was filtered off with suction and dried. The obtained material was stirred at a concentration of 129 g/1 in water at reflux temperature for about 3 hours, cooled, filtered off with suction and moistened with water. Finally, it was dried in a dryer of P2〇5. A substance having a melting point of 171 ° C was obtained. Preparation Example 4 (Method B) The crystallization crystal modification j of CMP was obtained from the known synthesis method: CMP of body IV in hexane/acetate (3: lv/v), Concentration 83 15

g/1,於回流溫度下攪拌2小時。之後,將該批冷卻,並經 過濾獲得沉澱物。所獲該物質於回流溫度下,於水中,濃度 172 g/ι ’攪拌3小時,所得沉澱物以過濾採集。最後,以G/1, stirred at reflux temperature for 2 hours. Thereafter, the batch was cooled and filtered to obtain a precipitate. The obtained material was stirred at reflux temperature of 172 g/m in water for 3 hours, and the obtained precipitate was collected by filtration. Finally,

CaCU之乾燥益乾燥。獲得熔點i69〇c之之結晶變體 I,產率83%。 製備實施例5 (方法d) CMP之結晶變體m之獲得’係將自已知合成方法取 之結晶變體1V < 轉於正㈣與正稱之混彳 V/V) ’濃度50 g/1 ’並於回流溫度下加熱加分鐘。反及 洛液另不依回H度加熱_小時,而隨後料顿拌靜置1、 20 200811092 小時。 將所形成沉澱物濾出。獲得熔點140-143。。之CMP之結 晶變體,產率48%。 5 配製物實施例1 製備可溶解濃縮CMP(SC)之配製物。於該製備程序後之 顆粒大小約1·5 μπι (圖5a)。其隨後於54°C儲存六週。儲存 • 後,使用活性物質僅包含約50%之結晶變體I之配製物,顯 示具體之結晶成長,平均顆粒大小為8μπι (圖5b)。具變體I 10 比例80-85%之配製物顆粒大小約6μπι (圖5c)。另一方面, 活性物質具變體I 90%以上之配製物幾乎沒有晶體成長,相 同時間之顆粒大小約1·8μιη (圖5d)。 32The dryness of CaCU is dry and dry. The crystal modification I of the melting point i69〇c was obtained in a yield of 83%. Preparation Example 5 (Method d) The crystallization of crystal modification m of CMP was obtained by a known synthesis method. The crystal modification 1V < was transferred to the positive (four) and the positively mixed 彳V/V) 'concentration 50 g / 1 'and heat at reflux temperature for a few minutes. In contrast, Luo liquid does not rely on H degree heating _ hours, and then the mixture is allowed to stand for 1, 20 200811092 hours. The precipitate formed was filtered off. The melting point of 140-143 was obtained. . The CMP has a crystal modification with a yield of 48%. 5 Formulation Example 1 A formulation that dissolves concentrated CMP (SC) is prepared. The particle size after the preparation procedure was about 1.5 μm (Fig. 5a). It was then stored at 54 ° C for six weeks. Storage • After the active material was used to contain only about 50% of the formulation of Crystalline I, showing a specific crystal growth with an average particle size of 8 μm (Figure 5b). The formulation having a variant I 10 ratio of 80-85% had a particle size of about 6 μm (Fig. 5c). On the other hand, the formulation in which the active material has a variant I of 90% or more has almost no crystal growth, and the particle size at the same time is about 1.8 μm (Fig. 5d). 32

Claims (1)

200811092 十、申請專利範圍: 1. 一種3-氯-N2-[(1S)-1-曱基-2-(甲磺醯基)乙基]-#-{2-甲基 -4-[l,2,2,2-四氟-1-(三氟曱基)乙基]苯基}酞醯胺之結晶變 體I,其特徵為使用CuKa放射線,其X-射線粉末繞射 5 圖案具至少以下反射位置:200811092 X. Patent application scope: 1. A 3-chloro-N2-[(1S)-1-indolyl-2-(methylsulfonyl)ethyl]-#-{2-methyl-4-[l , Crystalline variant I of 2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl]phenyl}decylamine, characterized by the use of CuKa radiation, the X-ray powder diffraction 5 pattern At least the following reflection locations: • 2.根據申請專利範圍第1項之3-氯-N2-[(1S)-1-甲基-2-(甲磺 醯基)乙基甲基-4-[l,2,2,2-四氟-I·(三氟甲基)乙基] ίο 苯基}酞醯胺之結晶變體I,其特徵為使用Cu Ka放射 線,其X-射線粉末繞射圖案具至少以下進一步之反射位 置: 33 200811092• 2. 3-Chloro-N2-[(1S)-1-methyl-2-(methylsulfonyl)ethylmethyl-4-[l,2,2,2 according to the scope of patent application - Crystalline variant I of tetrafluoro-I.(trifluoromethyl)ethyl] ίο phenyl}decylamine, characterized by the use of Cu Ka radiation, the X-ray powder diffraction pattern having at least the following further reflection Location: 33 200811092 3·根據申請專利範圍第1項之3-氯-N2-[(1S)-1-甲基-2-(甲磺 醯基)乙基]-NM2-曱基-4-[1,2,2,2-四氟-1-(三氟甲基)乙基] 苯基}酞醯胺之結晶變體I,其特徵為使用Cu Κα放射 5 線,其X-射線粉末繞射圖案大致符合圖1之頻譜。 4· 一種3-氯-N2-[(1S)-1-曱基-2-(曱磺醯基)乙基]-ΝΜ2-甲基 | -4-[1,2,2,2·四氟-1-(三氟甲基)乙基]苯基}3太酿胺之結晶變 體II,其特徵為使用CuKa放射線,其X-射線粉末繞射 圖案具至少以下進一步之反射位置:3. According to the scope of patent application, 3-chloro-N2-[(1S)-1-methyl-2-(methylsulfonyl)ethyl]-NM2-mercapto-4-[1,2, Crystalline variant I of 2,2-tetrafluoro-1-(trifluoromethyl)ethyl]phenyl}decylamine, characterized by the use of Cu Κα radiation 5 lines, the X-ray powder diffraction pattern substantially conforms The spectrum of Figure 1. 4. A 3-chloro-N2-[(1S)-1-indolyl-2-(indolyl)ethyl]-indole 2-methyl | -4-[1,2,2,2·tetrafluoro Crystalline variant II of -1-(trifluoromethyl)ethyl]phenyl}3 melamine, characterized by the use of CuKa radiation having an X-ray powder diffraction pattern with at least the following further reflection positions: 34 20081109234 200811092 5.根據申請專利範圍第4項之3-氯-N2-[(1S>1-甲基-2-(甲磺 醯基)乙基甲基-4-[1,2,2,2-四氟小(三氟甲基)乙基] | 苯基}酞醯胺之結晶變體II,其特徵為使用Cu Κα放射 5 線,其X-射線粉末繞射圖案具至少以下進一步之反射位 置: 2 theta/c 8.70 10.84 14.135. 3-Chloro-N2-[(1S>1-methyl-2-(methylsulfonyl)ethylmethyl-4-[1,2,2,2-four according to item 4 of the scope of the patent application Crystalline variant II of fluoro small (trifluoromethyl)ethyl] phenyl} decylamine characterized by the use of Cu Κα radiation 5 lines, the X-ray powder diffraction pattern having at least the following further reflection positions: 2 theta/c 8.70 10.84 14.13 17.50 20.90 2L06 22.48 22.73 6·根據申請專利範圍第4或5項之3-氯-N、[(1S)-1-甲基 ίο -2-(曱磺醯基)乙基]甲基-4-[l,2,2,2-四氟小(三氟 曱基)乙基]苯基}酞醯胺之結晶變體II,其特徵為使用Cu 35 200811092 Κα放射線,其X-射線粉末繞射圖案大致符合圖2之頻 言普0 一種3-氯-ΝΜ(⑸小甲基_1·(甲磺醯基)乙基甲基 _441,2,2,2-四氟(三氟甲基)乙基]苯基]酜酿胺之結晶變 體III,其特徵為使用Cu Κα放射線,其X-射線粉末繞 射圖案具至少以下進一步之反射位置:17.50 20.90 2L06 22.48 22.73 6. 3-Chloro-N, [(1S)-1-methyl ίο -2-(indolyl)ethyl]methyl-4-, according to Clause 4 or 5 of the scope of the patent application Crystalline variant II of [l,2,2,2-tetrafluorosuccinyl(trifluoromethyl)ethyl]phenyl}decylamine, characterized by the use of Cu 35 200811092 Κα radiation, X-ray powder diffraction The pattern roughly conforms to the frequency of Figure 2. A 3-chloro-indole ((5) small methyl-1·(methylsulfonyl)ethylmethyl-441,2,2,2-tetrafluoro(trifluoromethyl) Crystalline variant III of ethyl]phenyl]anthracene, characterized by the use of Cu Κα radiation, the X-ray powder diffraction pattern having at least the following further reflection positions: 2 theta/( 9.50 13.43 14.57 15.52 16.50 21.84 23.22 25.79 8’根據申凊專利範圍第7項之3-氯-N1-[(1 S)-l-曱基-2-(甲磺 醯基)乙基]曱基-4-[l,2,2,2-四氟-i_(三氟甲基)乙基] 苯基}酞醯胺之結晶變體ΙΠ’其特徵為使用CuKa放射 線’其X-射線粉末繞射圖案具至少以下進一步之反射位 置: 36 1 theta/0 200811092 16.38 18,24 19.11 19,92 23.88 24,14 25.982 theta/( 9.50 13.43 14.57 15.52 16.50 21.84 23.22 25.79 8' 3-Chloro-N1-[(1 S)-l-fluorenyl-2-(methylsulfonyl)ethyl according to item 7 of the scope of the patent application Crystalline variant 曱 of thiol-4-[l,2,2,2-tetrafluoro-i-(trifluoromethyl)ethyl]phenyl}decylamine, which is characterized by the use of CuKa radiation 'X- The ray powder diffraction pattern has at least the following further reflection positions: 36 1 theta/0 200811092 16.38 18,24 19.11 19,92 23.88 24,14 25.98 29.58 9.根據申請專利範圍第7或8項之3_氣·n2_[(is)小甲芙 -2-(甲續醯基)乙基地{2•甲基邻,2,2,2_四氟]•(三^ 甲基)乙基]苯基}酞醯胺之結晶變體ΙΠ,其特徵 529.58 9. According to the scope of patent application No. 7 or 8 of 3_ gas·n2_[(is) small kefu-2-(methyl sulfonyl) ethyl {2•methyl, 2, 2, 2_ four Crystalline variant of fluoro]•(trimethyl)ethyl]phenyl}decylamine, its characteristics 5 10 放射線,其Χ·射線粉末繞射圖案大致符合圖3之 頻譜。 10·根據申請專利範圍第i至3項中一或多項之 _N2-[(1S)小甲基-2_(甲磺醯基)乙基]_ν1_'{2_甲基 邻,2,2,2_四氟]_(三氟甲基)乙基]苯基成酿胺之結晶^ 體I,其可自以下方法取得·· a) f2 ^43;a'N2-[(1SH-^-2-(^^i 基)乙基]-N-{2-甲基-吼如,氟小(三 =]苯基m醯胺懸浮於至少一種非極性有機溶劑土並加 或 b)將結晶變體η或IV之3'氯冰[(ls)小甲基 基)乙基]-#{2-甲基-4-Π,2,2,2-四氟^皿 V—il甲基)乙 37 15 200811092 基]苯基}酞醯胺,懸浮於至少一種非極性有機溶劑與 至少一種極性溶劑之混合物並加熱, 或 C)將結晶變體IV 23|N2_[(1SHm(甲續醯基) ^基]-Ν -{2-甲基-4_[1,2,2,2-四氟小(三氟甲基)乙基] 苯基}酞醯胺先於非極性有機溶劑與乙酸乙酯之混合 物内加熱,隨後於水中加熱。 • 11.根據申請專利範圍第4至6項中一或多項之3|的(1 1〇 S>1一甲基_2_(甲石黃醯基)乙基]一N1♦甲基-4_[ U,2,2-四I -1-(二氟甲基)乙基]苯基丨酞醯胺之結晶變體Η,其可以 於水1中加熱3H[(1S)-1-甲基_2_(甲石黃醯基)乙 基]-N -{L甲基叫n2,2,氟]^氟甲基)乙基]苯基} 酜醯胺之結晶變體IV而取得。 15 12.根2據申請專利範圍第7至9項中一或多項之3·氯 -N -[(lS)-l-甲基_2_(甲磺醯基)乙基]甲基 • 4 [I,2,2,2四氟]_(二氟曱基)乙基]苯基}駄醯胺之結晶變 體III ’其可以於非極性有機溶劑與醇類之混合物中,加 熱3-氯-N2-[⑽·1_甲基_2_(甲續醯基)乙基]_Nl令甲基 20 -4-[1,2,2,2-四氟-1_(三氟曱基)乙基]笨基}酞醯胺之結晶變 體IV而取得。 !3·-種製備申請專利範圍第!至3項中—或多項之」一氯 -N -[(1S)-:U甲基_2_(甲磺醯基)乙基]甲基 _ [ ’,四氟1 (一氟甲基)乙基]苯基}駄醯胺之結晶變 體I的H包括於非極性有機溶劑或非極性溶劑及乙 38 200811092 ,乙醋混合物之懸浮液加熱3-氯-N2-[( 1 s)-l-甲基-2-(甲 磺酿基)乙基]-Nl{2_甲基冰 基]苯基}酞醯胺之結晶變體Π*Ιν。 14·製備申請專利範圍第」至3項中一或多項之^氣 N [(1S)小甲基_2_(曱磺醯基)乙基]曱基 [,,’2四氟1-(二氟曱基)乙基]苯基}酞醯胺之結晶變 體I的方法’包括首先於非極性有機溶劑及乙酸乙醋之混 ⑩ 口物將結晶變體1V,3_氯-NM(1S>4-甲基-2-(甲石黃醯基) 乙基ΡΝ1]2-甲基邻,2,2,2,氟小(三氟基甲基)乙基]苯 10 基}駄醯胺加熱,隨後於水中加熱。 15.-種製備中請專利範圍第4 i -叫〇SH.m(w酿基)乙二:^ 4 [1’2,2,2四氟-1-(二氟曱基)乙基]苯基丨酜醯胺之結晶變 體11的方法,包括於水中將3-氯-N2-[(1S)小甲基-2-(甲 15 石黃醯基)乙基]抓{2_曱基冰[1,2,2,2-四氟+(三氟基曱基) _ 乙基]苯基}酞醯胺之結晶變體IV加熱。 16,^製備㈣糊範圍第7至9項中—或多項之3-氣 -N -[(1S)-1-甲基_2-(甲磺醯基)乙基]_Ni-p曱基 -4-[l,2,2’2-四氟·1_(三氟甲基)乙基]苯基}酞醢胺之結晶變 2〇 體ΠΙ的方法’包括於非極性有機溶劑與醇類之混合物中 將3-氯冰[(13)小甲基κ甲磺醯基)乙基]-Νι_{2_曱基 -4-[1,2,2,2-四氟-1-(三氟基甲基)乙基]苯基}酞醯胺之結晶 變體IV加熱。 Π.—種組成物,包括申請專利範圍第丨至3項中一或多項 39 200811092 之3-氯-N -{(is)-i-甲基甲磺醯基)乙基}_Νι_{2_曱基 -4-[l,2,2,2-四氟(三氟基曱基)乙基]苯基}酞醯胺之結晶 變體I。 18· —種組成=,包括申請專利範圍第4至6項中一或多項 之3氯N [(is)小甲基j(甲石黃酿基)乙基]_^1_{2_曱基 -4-[1,2,2,2-四氟(三氟曱基)乙基]苯基}酞醯胺之結 體II。 • I9·一種組成1,包括申請專利範圍第.4至ό項中一或多項 之3备n2_[(ish_甲基_2_(甲磺醯基)乙基㈣令甲基 10 -4-[1,2,2,2-四氟4-(三氟甲基)乙基]苯基}酞醯胺之結晶變 體 III 〇 2〇· 一種申請專利範圍第1 i 3項中-或多項之3遺 N [(1S)小甲基-2-(曱磧醯基)乙基]_:^1-{2-甲基 -4-[l,2,2,2-四氟(三氟曱基)乙基]苯基丨酞醯胺之結晶變 15 體Ϊ做為殺昆蟲組成物之用途。 • 21.一種申請專利範圍第4 i 6項中-或多項之3-氯 -N2-{(1S)小曱基_2_(甲磺醯基)乙基}·ν1_{2_甲基 _4-[1,2,2,2-四氟-1-(三氟甲基)乙基]苯基}酞醯胺之結晶變 體II做為殺昆蟲組成物之用途。 20 22.-種申請專利範圍第7至9項中一或多項之3_氯 -Ν -[(1S)-1-曱基-2-(甲磺醯基)乙基]_ν1_《2_甲基 -4-[1,2,2,2-四氟-1·(三氟甲基)乙基]苯基}酜醯胺之結晶變 體III做為殺昆蟲組成物之用途。 23·-種控制不欲之昆蟲之方法,其特徵為施用包含申請專 200811092 利範圍第1至3項中一或多項之3-氯-N2-[(1S)-1-曱基 -2-(曱磺醯基)乙基]-NM2-曱基-4-[l,2,2,2-四氟小(三氟 曱基)乙基]苯基}酞醯胺之結晶變體I的配製物於昆蟲及 /或其棲息地及/或種子(seed)。 5 24·—種控制不欲之昆蟲之方法,其特徵為施用包含申請專 利範圍第4至6項中一或多項之3-氯-N2-[(1S)-1-甲基 -2-(甲磺醯基)乙基]-NM2-甲基-4-[l,2,2,2-四氟小(三氟 _ 甲基)乙基]苯基}酞醯胺之結晶變體II之配製物於昆蟲及/ 或其棲息地及/或種子。 ίο 25·—種控制不欲之昆蟲之方法,其特徵為施用包含申請專 利範圍第7至9項中一或多項之3-氯-N2-[(1S)-1-甲基 -2-(甲磺醯基)乙基]-N1]]-曱基-4-[l,2,2,2-四氟-1-(三氟 甲基)乙基]苯基}酞醯胺之結晶變體III的配製物於昆蟲及 /或其棲息地及/或種子。 4110 Radiation, the diffraction pattern of the Χ·ray powder roughly conforms to the spectrum of Figure 3. 10. _N2-[(1S)小methyl-2_(methylsulfonyl)ethyl]_ν1_'{2_methyl, 2, 2, according to one or more of the items i to 3 of the scope of the patent application 2_tetrafluoro]-(trifluoromethyl)ethyl]phenyl-forming amine crystals I, which can be obtained from the following method: a) f2 ^43; a'N2-[(1SH-^-2 -(^^i group)ethyl]-N-{2-methyl-吼, such as fluorine small (three =] phenyl m amide suspended in at least one non-polar organic solvent soil and b or crystallized 3'-chlorine [(ls) small methyl) ethyl]-#{2-methyl-4-anthracene, 2,2,2-tetrafluorobenzene dish V-il methyl) 37 15 200811092 base]phenyl}guanamine, suspended in a mixture of at least one non-polar organic solvent and at least one polar solvent and heated, or C) crystallized variant IV 23|N2_[(1SHm) ^基]-Ν -{2-methyl-4_[1,2,2,2-tetrafluorosuccinyl(trifluoromethyl)ethyl]phenyl}decylamine precedes non-polar organic solvents and ethyl acetate The mixture is heated and then heated in water. • 11. (1 1〇S>1 monomethyl_2_(methyl sulphate)ethyl) according to one or more of the claims 4 to 6 of the patent application One N1♦ Crystalline variant of phenyl-4_[U,2,2-tetra-I-(difluoromethyl)ethyl]phenyl decylamine, which can be heated in water 1 3H[(1S)-1 -Methyl-2_(methylglycosyl)ethyl]-N-{L methyl is called n2,2,fluoro]fluoromethyl)ethyl]phenyl} decylamine crystal derivative IV. 12. Root 2 According to one or more of items 7 to 9 of the patent application scope, chloro-N-[(lS)-l-methyl-2_(methylsulfonyl)ethyl]methyl • 4 [I , 2,2,2 tetrafluoro]-(difluoroindolyl)ethyl]phenyl}decylamine crystal modification III 'which can be heated in a mixture of a non-polar organic solvent and an alcohol - 3-chloro- N2-[(10)·1_methyl_2_(methylsulfonyl)ethyl]_Nl methyl 20 -4-[1,2,2,2-tetrafluoro-1_(trifluoromethyl)ethyl] Stupid base} The crystallized variant IV of decylamine is obtained. !3·- The preparation of the scope of the patent application! To 3 items - or a plurality of "monochloro-N -[(1S)-:U methyl_2_ H of the crystalline variant I of (methanesulfonyl)ethyl]methyl-[ ', tetrafluoro 1 (monofluoromethyl)ethyl]phenyl}decylamine is included in a non-polar organic solvent or a non-polar solvent And B 38 200811092, suspension of ethyl vinegar mixture heated 3- -N2 - [(1 s) -l- methyl-2- (methanesulfonamide stuffed yl) ethyl] -Nl {2_ ice-yl methyl] phenyl} phthalocyanine crystal Amides of variant Π * Ιν. 14·Preparation of one or more of the scope of the patent application from “S1 to 3” [(1S) small methyl-2_(indolyl)ethyl]indolyl [,, '2 tetrafluoro-1-(II) The method of crystal modification I of fluoromethyl)ethyl]phenyl}decylamine includes the first crystallized variant 1V, 3-chloro-NM (1S> in a mixture of a non-polar organic solvent and ethyl acetate). ; 4-methyl-2-(methyl fluorenyl) ethyl hydrazine 1] 2-methyl ortho, 2, 2, 2, fluoro small (trifluoromethyl) ethyl] benzene 10 yl} decylamine heating, Then heated in water. 15.- The preparation of the patent range 4 i - called 〇SH.m (w-branched) E2: ^ 4 [1'2,2,2 tetrafluoro-1-(difluorofluorene) A method of crystallizing variant 11 of ethyl]phenyl decylamine comprising the step of capturing 3-chloro-N2-[(1S)small methyl-2-(methyl 15 sulphate)ethyl] in water { 2_曱基冰 [1,2,2,2-tetrafluoro+(trifluoromethylindenyl) _ethyl]phenyl}decylamine crystal modification IV heating. 16, ^ preparation (four) paste range 7 Up to 9 - or more than 3-gas-N -[(1S)-1-methyl_2-(methylsulfonyl)ethyl]_Ni-p-mercapto-4-[l,2,2' Crystallization of 2-tetrafluoro·1_(trifluoromethyl)ethyl]phenyl}decylamine The method 'includes 3-chloro-ice [(13) small methyl κ-methylsulfonyl) ethyl]-Νι_{2_mercapto-4-[1,2 in a mixture of a non-polar organic solvent and an alcohol. Crystalline variant IV of 2,2-tetrafluoro-1-(trifluoromethyl)ethyl]phenyl}decylamine was heated. Π.—The composition, including one or more of the patent applications 丨 to 3, 39, 200811092, 3-chloro-N -{(is)-i-methylmethylsulfonyl)ethyl}_Νι_{2_ Crystalline variant I of mercapto-4-[l,2,2,2-tetrafluoro(trifluorodecyl)ethyl]phenyl}decylamine. 18·—Composition=, including one or more of the patent scopes 4 to 6 of 3 chloro N [(is) small methyl j (methionite) ethyl]_^1_{2_ fluorenyl The knot II of -4-[1,2,2,2-tetrafluoro(trifluoromethyl)ethyl]phenyl}decylamine. • I9 · A composition 1, including one or more of the patent applications in paragraphs 4 to 3, n2_[(ish_methyl_2_(methylsulfonyl)ethyl (tetra)methyl 10 -4-[ Crystalline variant of 1,2,2,2-tetrafluoro-4-(trifluoromethyl)ethyl]phenyl}decylamine III 〇2〇· One or more of the patent claims 1 i 3 3 residual N [(1S) small methyl-2-(indenyl)ethyl]_:^1-{2-methyl-4-[l,2,2,2-tetrafluoro(trifluorofluorene) The use of chloroformylamine as a pesticidal composition. 21. A 3-chloro-N2-{- (1S) bismuthyl-2-((methylsulfonyl)ethyl}·ν1_{2_methyl_4-[1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl] The use of phenyl}guanamine crystal variant II as an insecticidal composition. 20 22.- One of the patent applications in the range of items 7 to 9 of 3_chloro-Ν-[(1S)-1 -mercapto-2-(methylsulfonyl)ethyl]_ν1_"2-methyl-4-[1,2,2,2-tetrafluoro-1·(trifluoromethyl)ethyl]phenyl} The use of phthalamide crystal modification III as an insecticidal composition. 23·-A method for controlling unwanted insects Characterized by the application of 3-chloro-N2-[(1S)-1-indolyl-2-(indolyl)ethyl]-NM2- comprising one or more of items 1 to 3 of the application specification 200811092 Formulation of crystalline variant I of mercapto-4-[l,2,2,2-tetrafluorosuccinyl(ethyl)phenyl]decylamine in insects and/or their habitat and/or Or a seed. 5 24 · A method for controlling an unwanted insect, characterized by applying 3-chloro-N2-[(1S)-1- comprising one or more of items 4 to 6 of the patent application scope Methyl-2-(methylsulfonyl)ethyl]-NM2-methyl-4-[l,2,2,2-tetrafluoros(trifluoro-methyl)ethyl]phenyl}decylamine The formulation of the crystal modification II is in insects and/or its habitat and/or seed. ίο 25 - A method of controlling an unwanted insect, characterized in that the application comprises one of items 7 to 9 of the scope of the patent application or 3-Chloro-N2-[(1S)-1-methyl-2-(methylsulfonyl)ethyl]-N1]]-mercapto-4-[l,2,2,2-tetrafluoro Formulation of crystalline variant III of -1-(trifluoromethyl)ethyl]phenyl}decylamine in insects and/or their habitat and/or seeds.
TW96110660A 2006-03-29 2007-03-28 Novel crystalline modifications of 3-chloro-N2-[(1S)-1-methyl-2-(methylsulphonyl)ethyl]-N1-{2-methyl-4-[1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl]phenyl}phthalamide TW200811092A (en)

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