[go: up one dir, main page]

TW200801818A - Composition for forming under film and method for forming pattern - Google Patents

Composition for forming under film and method for forming pattern

Info

Publication number
TW200801818A
TW200801818A TW096108622A TW96108622A TW200801818A TW 200801818 A TW200801818 A TW 200801818A TW 096108622 A TW096108622 A TW 096108622A TW 96108622 A TW96108622 A TW 96108622A TW 200801818 A TW200801818 A TW 200801818A
Authority
TW
Taiwan
Prior art keywords
forming
composition
under film
pattern
forming pattern
Prior art date
Application number
TW096108622A
Other languages
English (en)
Other versions
TWI414893B (zh
Inventor
Nakaatsu Yoshimura
Yousuke Konno
Hikaru Sugita
Junichi Takahashi
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200801818A publication Critical patent/TW200801818A/zh
Application granted granted Critical
Publication of TWI414893B publication Critical patent/TWI414893B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096108622A 2006-03-14 2007-03-13 底層膜形成用組成物及圖型之形成方法 TWI414893B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006068525 2006-03-14

Publications (2)

Publication Number Publication Date
TW200801818A true TW200801818A (en) 2008-01-01
TWI414893B TWI414893B (zh) 2013-11-11

Family

ID=38509592

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108622A TWI414893B (zh) 2006-03-14 2007-03-13 底層膜形成用組成物及圖型之形成方法

Country Status (7)

Country Link
US (1) US7749681B2 (zh)
EP (1) EP1995636A4 (zh)
JP (1) JP5136407B2 (zh)
KR (1) KR101454490B1 (zh)
CN (1) CN101427183A (zh)
TW (1) TWI414893B (zh)
WO (1) WO2007105776A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI510862B (zh) * 2009-12-23 2015-12-01 Merck Patent Gmbh 抗反射塗層組合物及其方法
TWI644937B (zh) * 2014-03-31 2018-12-21 日產化學工業股份有限公司 含有附加芳香族乙烯基化合物之酚醛清漆樹脂的光阻底層膜形成組成物
TWI697738B (zh) * 2016-06-16 2020-07-01 南韓商東友精細化工有限公司 硬遮罩用組成物

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100896451B1 (ko) * 2006-12-30 2009-05-14 제일모직주식회사 카본 함량이 개선된 고 내에칭성 반사방지 하드마스크조성물, 이를 이용한 패턴화된 재료 형상의　제조방법
US8017296B2 (en) 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
EP2219076B1 (en) * 2007-12-07 2013-11-20 Mitsubishi Gas Chemical Company, Inc. Composition for forming base film for lithography and method for forming multilayer resist pattern
JP5157560B2 (ja) * 2008-03-21 2013-03-06 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びそれを用いたパターン形成方法
JP5077026B2 (ja) * 2008-04-02 2012-11-21 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びそれを用いたデュアルダマシン構造の形成方法
JP5251433B2 (ja) * 2008-10-31 2013-07-31 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びパターン形成方法
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
WO2012043403A1 (ja) 2010-09-29 2012-04-05 Jsr株式会社 パターン形成方法、レジスト下層膜及びレジスト下層膜形成用組成物
WO2012077640A1 (ja) * 2010-12-09 2012-06-14 日産化学工業株式会社 水酸基含有カルバゾールノボラック樹脂を含むレジスト下層膜形成組成物
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US9029069B2 (en) 2011-03-31 2015-05-12 Jsr Corporation Resist underlayer film-forming composition and method for forming pattern
US8513133B2 (en) 2011-03-31 2013-08-20 Jsr Corporation Composition for forming resist underlayer film and method for forming pattern
KR101922280B1 (ko) * 2011-10-12 2018-11-26 제이에스알 가부시끼가이샤 패턴 형성 방법 및 레지스트 하층막 형성용 조성물
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR102155115B1 (ko) * 2012-12-14 2020-09-11 닛산 가가쿠 가부시키가이샤 카르보닐기함유 폴리하이드록시 방향환 노볼락수지를 포함하는 레지스트 하층막 형성조성물
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR101956333B1 (ko) * 2013-12-11 2019-03-08 주식회사 엘지화학 나프탈렌 유도체와 금속 복합체를 포함하는 캡슐 조성물 및 이를 이용한 가역적 캡슐 형성방법
KR102313101B1 (ko) 2013-12-12 2021-10-15 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 하부층용 방향족 수지
KR102634064B1 (ko) * 2015-12-01 2024-02-07 닛산 가가쿠 가부시키가이샤 인돌로카바졸노볼락 수지를 포함하는 레지스트 하층막 형성 조성물
KR101801922B1 (ko) 2015-12-28 2017-11-27 에스케이씨 주식회사 고내열성 및 고내화학성의 보호박막 조성물 및 이를 이용하여 보호박막을 제조하는 방법
KR101962419B1 (ko) * 2016-01-20 2019-03-26 삼성에스디아이 주식회사 중합체, 유기막 조성물, 및 패턴형성방법
JP6981945B2 (ja) 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法
JP2023101149A (ja) * 2022-01-07 2023-07-20 東京応化工業株式会社 レジスト下層膜形成用組成物、レジストパターン形成方法、レジスト下層膜パターンの形成方法、及びパターン形成方法
JP2024116011A (ja) 2023-02-15 2024-08-27 信越化学工業株式会社 パターン形成方法
JP2025117967A (ja) 2024-01-31 2025-08-13 信越化学工業株式会社 パターン形成方法、及び積層体

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61130947A (ja) 1984-11-30 1986-06-18 Japan Synthetic Rubber Co Ltd ポジ型レジスト組成物
JP3206672B2 (ja) * 1991-03-29 2001-09-10 大日本インキ化学工業株式会社 エポキシ樹脂硬化剤及びエポキシ樹脂組成物
JPH0873570A (ja) * 1994-09-12 1996-03-19 Dainippon Ink & Chem Inc フェノールアラルキル型樹脂の製造方法および硬化性エポキシ樹脂組成物
JP3433017B2 (ja) * 1995-08-31 2003-08-04 株式会社東芝 感光性組成物
KR100202763B1 (ko) * 1995-08-31 1999-06-15 니시무로 타이죠 감광성 조성물
JP3928278B2 (ja) 1998-11-16 2007-06-13 Ｊｓｒ株式会社 反射防止膜形成組成物
JP4288776B2 (ja) 1999-08-03 2009-07-01 Ｊｓｒ株式会社 反射防止膜形成組成物
JP3971088B2 (ja) * 2000-06-30 2007-09-05 株式会社東芝 パターン形成方法
JP4013058B2 (ja) * 2002-12-24 2007-11-28 信越化学工業株式会社 パターン形成方法及び下層膜形成材料
JP3981825B2 (ja) 2002-12-24 2007-09-26 信越化学工業株式会社 パターン形成方法及び下層膜形成材料
JP2005015532A (ja) * 2003-06-23 2005-01-20 Jsr Corp 重合体および反射防止膜形成組成物
JP4252872B2 (ja) 2003-10-06 2009-04-08 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
JP5051133B2 (ja) 2006-09-28 2012-10-17 Ｊｓｒ株式会社 レジスト下層膜形成方法及びそれに用いるレジスト下層膜用組成物並びにパターン形成方法
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
KR100816735B1 (ko) * 2006-12-20 2008-03-25 제일모직주식회사 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스
KR100896451B1 (ko) * 2006-12-30 2009-05-14 제일모직주식회사 카본 함량이 개선된 고 내에칭성 반사방지 하드마스크조성물, 이를 이용한 패턴화된 재료 형상의　제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI510862B (zh) * 2009-12-23 2015-12-01 Merck Patent Gmbh 抗反射塗層組合物及其方法
TWI644937B (zh) * 2014-03-31 2018-12-21 日產化學工業股份有限公司 含有附加芳香族乙烯基化合物之酚醛清漆樹脂的光阻底層膜形成組成物
TWI697738B (zh) * 2016-06-16 2020-07-01 南韓商東友精細化工有限公司 硬遮罩用組成物

Also Published As

Publication number Publication date
KR20080105145A (ko) 2008-12-03
WO2007105776A1 (ja) 2007-09-20
EP1995636A4 (en) 2010-01-27
US7749681B2 (en) 2010-07-06
TWI414893B (zh) 2013-11-11
JPWO2007105776A1 (ja) 2009-07-30
KR101454490B1 (ko) 2014-10-27
JP5136407B2 (ja) 2013-02-06
US20090098486A1 (en) 2009-04-16
CN101427183A (zh) 2009-05-06
EP1995636A1 (en) 2008-11-26

Similar Documents

Publication Publication Date Title
TW200801818A (en) Composition for forming under film and method for forming pattern
TW200627068A (en) Resist composition, process for producing resist pattern, and compound
WO2007118198A8 (en) 2-METHYLENE-1α,25-DIHYDROXY-19,21-DINORVITAMIN D3 ANALOGS AND USES THEREOF
WO2006084285A3 (en) Olefin oligomerization and biodegradable compositions therefrom
TW200606580A (en) A chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same
EA017861B9 (ru) Способ получения 4-оксохинолинового соединения
ATE537554T1 (de) Vorläufer für die filmbildung und verfahren zur bildung eines rutheniumhaltigen films
EP2567995A3 (en) Resin composition for printing plate
TW200641522A (en) Positive resist composition, method for forming resist pattern and compound
TW200716539A (en) Calixresorcinarene compound, photoresist base comprising the same, and composition thereof
WO2009008468A1 (ja) ベンゾキサジン構造を有する熱硬化性樹脂及びその製造方法
WO2009016848A1 (ja) シルセスキオキサンを含有する組成物及びシルセスキオキサン含有ヒドロキシアルキルセルロース樹脂組成物
EP1795534A3 (de) Organosiliciumverbindungen, ihre Herstellung und ihre Verwendung
EP2000122A3 (en) Microbiocidal composition
WO2008103847A3 (en) Bridged polycyclic compound based compositions for the inhibition and amelioration of disease
SG150519A1 (en) Propylene-based copolymer material, film made therefrom, and method for producing propylene-based copolymer material
EP1892125A3 (en) Amine containing catalyst system and methods of use thereof
WO2008096586A1 (ja) 新規なメチル化カテキン及びそれを含む組成
DE502007003544D1 (de) Verfahren zur herstellung von superabsorbern
TW200700921A (en) Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminal
WO2008088051A1 (ja) ホスホリルコリン基含有化合物、ホスホリルコリン基含有化合物の製造方法、表面改質剤、及び表面改質剤を用いた表面改質方法
TW200609240A (en) Compound for optical materials and methods of fabrication
WO2010002528A3 (en) Hydrofluoroacetal compounds and processes for their preparation and use
TW200745758A (en) Base soluble polymers for photoresist compositions
WO2008059130A9 (fr) Thionucléosides et applications pharmaceutiques

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees