TW200746252A - Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing method - Google Patents
Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing methodInfo
- Publication number
- TW200746252A TW200746252A TW095143501A TW95143501A TW200746252A TW 200746252 A TW200746252 A TW 200746252A TW 095143501 A TW095143501 A TW 095143501A TW 95143501 A TW95143501 A TW 95143501A TW 200746252 A TW200746252 A TW 200746252A
- Authority
- TW
- Taiwan
- Prior art keywords
- mark
- detection
- pattern forming
- device manufacturing
- order diffracted
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title abstract 2
- 238000001514 detection method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A wafer mark (M) formed on a wafer has a periodic structure wherein the strength of even-number-order diffracted light is made weaker than that of odd-number-order diffracted light, i.e., reflected light of illuminating light from a light source of an alignment system. Therefore, the measurement error of the positional information of the wafer mark (M) due to the odd-number-order diffracted light is reduced. Furthermore, since the duty ratio of the wafer mark (M) is not necessarily 1:1, the reflectivity of the entire mark is improved and the mark position can be easily measured by the alignment system.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005337920 | 2005-11-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200746252A true TW200746252A (en) | 2007-12-16 |
Family
ID=38067250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095143501A TW200746252A (en) | 2005-11-24 | 2006-11-24 | Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW200746252A (en) |
| WO (1) | WO2007061025A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI450418B (en) * | 2010-08-24 | 2014-08-21 | Advanced Optoelectronic Tech | Epitaxy substrate |
| US9726991B2 (en) | 2013-03-14 | 2017-08-08 | Asml Netherlands B.V. | Patterning device, method of producing a marker on a substrate and device manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06147827A (en) * | 1992-11-05 | 1994-05-27 | Soltec:Kk | Positional shift detecting method |
| JPH09171956A (en) * | 1995-12-21 | 1997-06-30 | Nikon Corp | Exposure equipment |
| JP2001083688A (en) * | 1999-07-13 | 2001-03-30 | Matsushita Electronics Industry Corp | Method for forming photomask and resist pattern, alignment precision measuring method, manufacture of semiconductor device |
| JP2001250766A (en) * | 2000-03-07 | 2001-09-14 | Nikon Corp | Position measuring apparatus, exposure apparatus and exposure method |
| JP2004119663A (en) * | 2002-09-26 | 2004-04-15 | Nikon Corp | Position detecting apparatus, position detecting method, exposure apparatus, and exposure method |
-
2006
- 2006-11-24 TW TW095143501A patent/TW200746252A/en unknown
- 2006-11-24 WO PCT/JP2006/323388 patent/WO2007061025A1/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI450418B (en) * | 2010-08-24 | 2014-08-21 | Advanced Optoelectronic Tech | Epitaxy substrate |
| US9726991B2 (en) | 2013-03-14 | 2017-08-08 | Asml Netherlands B.V. | Patterning device, method of producing a marker on a substrate and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007061025A1 (en) | 2007-05-31 |
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