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TW200746252A - Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing method - Google Patents

Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing method

Info

Publication number
TW200746252A
TW200746252A TW095143501A TW95143501A TW200746252A TW 200746252 A TW200746252 A TW 200746252A TW 095143501 A TW095143501 A TW 095143501A TW 95143501 A TW95143501 A TW 95143501A TW 200746252 A TW200746252 A TW 200746252A
Authority
TW
Taiwan
Prior art keywords
mark
detection
pattern forming
device manufacturing
order diffracted
Prior art date
Application number
TW095143501A
Other languages
Chinese (zh)
Inventor
Tsuneyuki Hagiwara
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200746252A publication Critical patent/TW200746252A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7076Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A wafer mark (M) formed on a wafer has a periodic structure wherein the strength of even-number-order diffracted light is made weaker than that of odd-number-order diffracted light, i.e., reflected light of illuminating light from a light source of an alignment system. Therefore, the measurement error of the positional information of the wafer mark (M) due to the odd-number-order diffracted light is reduced. Furthermore, since the duty ratio of the wafer mark (M) is not necessarily 1:1, the reflectivity of the entire mark is improved and the mark position can be easily measured by the alignment system.
TW095143501A 2005-11-24 2006-11-24 Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing method TW200746252A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005337920 2005-11-24

Publications (1)

Publication Number Publication Date
TW200746252A true TW200746252A (en) 2007-12-16

Family

ID=38067250

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143501A TW200746252A (en) 2005-11-24 2006-11-24 Mark structure, mark measurement apparatus, pattern forming apparatus and detection apparatus, and detection method and device manufacturing method

Country Status (2)

Country Link
TW (1) TW200746252A (en)
WO (1) WO2007061025A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450418B (en) * 2010-08-24 2014-08-21 Advanced Optoelectronic Tech Epitaxy substrate
US9726991B2 (en) 2013-03-14 2017-08-08 Asml Netherlands B.V. Patterning device, method of producing a marker on a substrate and device manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06147827A (en) * 1992-11-05 1994-05-27 Soltec:Kk Positional shift detecting method
JPH09171956A (en) * 1995-12-21 1997-06-30 Nikon Corp Exposure equipment
JP2001083688A (en) * 1999-07-13 2001-03-30 Matsushita Electronics Industry Corp Method for forming photomask and resist pattern, alignment precision measuring method, manufacture of semiconductor device
JP2001250766A (en) * 2000-03-07 2001-09-14 Nikon Corp Position measuring apparatus, exposure apparatus and exposure method
JP2004119663A (en) * 2002-09-26 2004-04-15 Nikon Corp Position detecting apparatus, position detecting method, exposure apparatus, and exposure method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450418B (en) * 2010-08-24 2014-08-21 Advanced Optoelectronic Tech Epitaxy substrate
US9726991B2 (en) 2013-03-14 2017-08-08 Asml Netherlands B.V. Patterning device, method of producing a marker on a substrate and device manufacturing method

Also Published As

Publication number Publication date
WO2007061025A1 (en) 2007-05-31

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