TW200723352A - Medium pressure plasma system for removal of surface layers without substrate loss - Google Patents
Medium pressure plasma system for removal of surface layers without substrate lossInfo
- Publication number
- TW200723352A TW200723352A TW094143380A TW94143380A TW200723352A TW 200723352 A TW200723352 A TW 200723352A TW 094143380 A TW094143380 A TW 094143380A TW 94143380 A TW94143380 A TW 94143380A TW 200723352 A TW200723352 A TW 200723352A
- Authority
- TW
- Taiwan
- Prior art keywords
- medium pressure
- photoresist
- removal
- surface layers
- pressure plasma
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000002344 surface layer Substances 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 150000002894 organic compounds Chemical group 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A system and method for removing photoresist or other organic compounds form semiconductor wafers is provided. Non-fluorinated reactant gases (O2, H2, H2O, N2, etc.) are activated in a quartz tube by a medium pressure surface wave discharge. As the plasma jet impinges on a substrate, volatile reaction products (H2O, CO2, or low molecular weight hydrocarbons) selectively remove the photoresist from the surface. The medium pressure also enables high gas temperatures that provide an effective source of heat in the reactive zone on the wafer that enhances etch rates and provides a practical means of removing ion implanted photoresist.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63367304P | 2004-12-06 | 2004-12-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200723352A true TW200723352A (en) | 2007-06-16 |
Family
ID=57912265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094143380A TW200723352A (en) | 2004-12-06 | 2005-12-08 | Medium pressure plasma system for removal of surface layers without substrate loss |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200723352A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472882B (en) * | 2008-05-06 | 2015-02-11 | Novellus Systems Inc | Photoresist stripping method and apparatus |
| US9835388B2 (en) | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
-
2005
- 2005-12-08 TW TW094143380A patent/TW200723352A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472882B (en) * | 2008-05-06 | 2015-02-11 | Novellus Systems Inc | Photoresist stripping method and apparatus |
| US9835388B2 (en) | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| US11075127B2 (en) | 2016-08-09 | 2021-07-27 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
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