TW200721463A - Memory device with improved performance and method of manufacturing such a memory device - Google Patents
Memory device with improved performance and method of manufacturing such a memory deviceInfo
- Publication number
- TW200721463A TW200721463A TW095134841A TW95134841A TW200721463A TW 200721463 A TW200721463 A TW 200721463A TW 095134841 A TW095134841 A TW 095134841A TW 95134841 A TW95134841 A TW 95134841A TW 200721463 A TW200721463 A TW 200721463A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- charge
- memory device
- current
- insulating layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 108091006146 Channels Proteins 0.000 abstract 5
- 239000002800 charge carrier Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
- H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
- H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05108804 | 2005-09-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200721463A true TW200721463A (en) | 2007-06-01 |
Family
ID=37889200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095134841A TW200721463A (en) | 2005-09-23 | 2006-09-20 | Memory device with improved performance and method of manufacturing such a memory device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090179254A1 (zh) |
| EP (1) | EP1938359A2 (zh) |
| JP (1) | JP2009514194A (zh) |
| CN (1) | CN101563783A (zh) |
| TW (1) | TW200721463A (zh) |
| WO (1) | WO2007034376A2 (zh) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008102451A1 (ja) * | 2007-02-22 | 2008-08-28 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
| US9299568B2 (en) | 2007-05-25 | 2016-03-29 | Cypress Semiconductor Corporation | SONOS ONO stack scaling |
| US8614124B2 (en) | 2007-05-25 | 2013-12-24 | Cypress Semiconductor Corporation | SONOS ONO stack scaling |
| US9431549B2 (en) | 2007-12-12 | 2016-08-30 | Cypress Semiconductor Corporation | Nonvolatile charge trap memory device having a high dielectric constant blocking region |
| US9102522B2 (en) | 2009-04-24 | 2015-08-11 | Cypress Semiconductor Corporation | Method of ONO integration into logic CMOS flow |
| US8071453B1 (en) | 2009-04-24 | 2011-12-06 | Cypress Semiconductor Corporation | Method of ONO integration into MOS flow |
| CN102543887A (zh) * | 2012-02-28 | 2012-07-04 | 上海华力微电子有限公司 | 一种通过改变沟道应力提高sonos器件工作速度的方法 |
| KR102146640B1 (ko) * | 2012-07-01 | 2020-08-21 | 롱지튜드 플래쉬 메모리 솔루션즈 리미티드 | 비휘발성 전하 트랩 메모리 디바이스를 제조하기 위한 라디칼 산화 프로세스 |
| US8796098B1 (en) * | 2013-02-26 | 2014-08-05 | Cypress Semiconductor Corporation | Embedded SONOS based memory cells |
| US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
| US9711350B2 (en) * | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
| US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
| US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
| CN113871527A (zh) * | 2021-09-27 | 2021-12-31 | 北京大学 | 一种叠层电荷俘获型突触晶体管及其制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4001851B2 (ja) * | 2002-08-23 | 2007-10-31 | 松下電器産業株式会社 | 不揮発性メモリ |
| US6797567B2 (en) * | 2002-12-24 | 2004-09-28 | Macronix International Co., Ltd. | High-K tunneling dielectric for read only memory device and fabrication method thereof |
| JP4489359B2 (ja) * | 2003-01-31 | 2010-06-23 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
| US6713810B1 (en) * | 2003-02-10 | 2004-03-30 | Micron Technology, Inc. | Non-volatile devices, and electronic systems comprising non-volatile devices |
| US7297634B2 (en) * | 2003-06-06 | 2007-11-20 | Marvell World Trade Ltd. | Method and apparatus for semiconductor device and semiconductor memory device |
| KR20040107967A (ko) * | 2003-06-16 | 2004-12-23 | 삼성전자주식회사 | Ｓｏｎｏｓ메모리 소자 및 그 정보 소거방법 |
| US6891192B2 (en) * | 2003-08-04 | 2005-05-10 | International Business Machines Corporation | Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions |
| US20050167730A1 (en) * | 2004-02-03 | 2005-08-04 | Chien-Hsing Lee | Cell structure of nonvolatile memory device |
| US7179745B1 (en) * | 2004-06-04 | 2007-02-20 | Advanced Micro Devices, Inc. | Method for offsetting a silicide process from a gate electrode of a semiconductor device |
| US7321145B2 (en) * | 2005-10-13 | 2008-01-22 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory cells with modified band structure |
-
2006
- 2006-09-13 US US12/067,491 patent/US20090179254A1/en not_active Abandoned
- 2006-09-13 CN CNA2006800348615A patent/CN101563783A/zh active Pending
- 2006-09-13 WO PCT/IB2006/053262 patent/WO2007034376A2/en not_active Ceased
- 2006-09-13 EP EP06821084A patent/EP1938359A2/en not_active Withdrawn
- 2006-09-13 JP JP2008531836A patent/JP2009514194A/ja not_active Withdrawn
- 2006-09-20 TW TW095134841A patent/TW200721463A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007034376A2 (en) | 2007-03-29 |
| WO2007034376A3 (en) | 2008-11-20 |
| JP2009514194A (ja) | 2009-04-02 |
| CN101563783A (zh) | 2009-10-21 |
| EP1938359A2 (en) | 2008-07-02 |
| US20090179254A1 (en) | 2009-07-16 |
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