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TW200728905A - Photomask and exposure method using same - Google Patents

Photomask and exposure method using same

Info

Publication number
TW200728905A
TW200728905A TW095136984A TW95136984A TW200728905A TW 200728905 A TW200728905 A TW 200728905A TW 095136984 A TW095136984 A TW 095136984A TW 95136984 A TW95136984 A TW 95136984A TW 200728905 A TW200728905 A TW 200728905A
Authority
TW
Taiwan
Prior art keywords
shielding film
photomask
same
exposure method
transparent substrate
Prior art date
Application number
TW095136984A
Other languages
Chinese (zh)
Other versions
TWI407246B (en
Inventor
Koichi Kajiyama
Yoshio Watanabe
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of TW200728905A publication Critical patent/TW200728905A/en
Application granted granted Critical
Publication of TWI407246B publication Critical patent/TWI407246B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Filters (AREA)

Abstract

The present invention provides a photo mask 1 including a transparent substrate 2 and a shielding film 3 formed on one surface of the transparent substrate 2, characterized in that: a plurality of mask patterns 4 is arranged in one direction on the shielding film 3 for allowing exposure light to pass through; and an observing window 5 is formed on the shielding film 3 adjacent to one side along the arranged direction of the plurality of mask patterns 4, such that a surface of a color filter substrate provided in opposite side can be observed. Thus, precision of overlaying the exposed patterns on a standard pattern provided on a substrate coated with a photosensitive resin can be increased.
TW095136984A 2005-10-07 2006-10-05 Photomask and exposure method using same TWI407246B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005295055A JP5145530B2 (en) 2005-10-07 2005-10-07 Photomask and exposure method using the same

Publications (2)

Publication Number Publication Date
TW200728905A true TW200728905A (en) 2007-08-01
TWI407246B TWI407246B (en) 2013-09-01

Family

ID=37942574

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136984A TWI407246B (en) 2005-10-07 2006-10-05 Photomask and exposure method using same

Country Status (5)

Country Link
JP (1) JP5145530B2 (en)
KR (1) KR101205521B1 (en)
CN (1) CN101273302B (en)
TW (1) TWI407246B (en)
WO (1) WO2007043323A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107300836A (en) * 2017-08-16 2017-10-27 深圳市华星光电技术有限公司 Exposure method and exposure device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661218B (en) * 2008-08-28 2012-06-13 富葵精密组件(深圳)有限公司 Method for preparing transparent light mask
JP5633021B2 (en) * 2009-06-29 2014-12-03 株式会社ブイ・テクノロジー Alignment method, alignment apparatus, and exposure apparatus
JP5843191B2 (en) * 2011-08-03 2016-01-13 株式会社ブイ・テクノロジー Photo mask
KR20140017767A (en) 2012-07-31 2014-02-12 삼성디스플레이 주식회사 Mask for deposition and method for aligning the same
CN104503203A (en) * 2015-01-15 2015-04-08 京东方科技集团股份有限公司 Mask plate and production method thereof and display panel frame sealing adhesive curing method
JP6940873B2 (en) * 2017-12-08 2021-09-29 株式会社ブイ・テクノロジー Exposure equipment and exposure method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185929A (en) 1985-02-13 1986-08-19 Nec Corp X-ray exposure mask
JPH0196655A (en) * 1987-10-08 1989-04-14 Toshiba Corp Glass mask
JP2668834B2 (en) * 1989-03-31 1997-10-27 ウシオ電機株式会社 Exposure equipment
JPH0513297A (en) * 1991-07-09 1993-01-22 Nikon Corp Alignment device
JPH09274323A (en) 1996-04-04 1997-10-21 Toppan Printing Co Ltd Pattern exposure method
JP3740847B2 (en) * 1998-06-29 2006-02-01 株式会社村田製作所 Semiconductor device manufacturing method and photomask positioning method
JP2000031015A (en) * 1998-07-13 2000-01-28 Nikon Corp Position detection method, position adjustment method, scanning exposure method, scanning exposure apparatus, and device manufacturing method
JP3085292B2 (en) 1998-10-14 2000-09-04 株式会社ニコン Scanning exposure equipment
US6360012B1 (en) * 1999-06-25 2002-03-19 Svg Lithography Systems, Inc. In situ projection optic metrology method and apparatus
WO2004011967A1 (en) * 2002-07-26 2004-02-05 Nikon Corporation Diffractive optics, illumiinating optical system, exposure system and exposure method
JP3884371B2 (en) * 2002-11-26 2007-02-21 株式会社東芝 Reticle, exposure monitoring method, exposure method, and semiconductor device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107300836A (en) * 2017-08-16 2017-10-27 深圳市华星光电技术有限公司 Exposure method and exposure device
CN107300836B (en) * 2017-08-16 2020-03-10 深圳市华星光电技术有限公司 Exposure method and exposure apparatus

Also Published As

Publication number Publication date
CN101273302A (en) 2008-09-24
KR20080053480A (en) 2008-06-13
TWI407246B (en) 2013-09-01
JP2007102093A (en) 2007-04-19
KR101205521B1 (en) 2012-11-28
WO2007043323A1 (en) 2007-04-19
JP5145530B2 (en) 2013-02-20
CN101273302B (en) 2012-02-01

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