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TW200728496A - CVD reactor with replaceable process chamber cover - Google Patents

CVD reactor with replaceable process chamber cover

Info

Publication number
TW200728496A
TW200728496A TW095143357A TW95143357A TW200728496A TW 200728496 A TW200728496 A TW 200728496A TW 095143357 A TW095143357 A TW 095143357A TW 95143357 A TW95143357 A TW 95143357A TW 200728496 A TW200728496 A TW 200728496A
Authority
TW
Taiwan
Prior art keywords
process chamber
cover
support
cover plate
chamber cover
Prior art date
Application number
TW095143357A
Other languages
Chinese (zh)
Other versions
TWI402373B (en
Inventor
Johannes Kaeppeler
Walter Franken
Original Assignee
Aixtron Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Ag filed Critical Aixtron Ag
Publication of TW200728496A publication Critical patent/TW200728496A/en
Application granted granted Critical
Publication of TWI402373B publication Critical patent/TWI402373B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45576—Coaxial inlets for each gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

This invention provides a device for depositing at least one layer on at least one substrate (2) which comprises a reaction chamber arranged inside a reactor housing (1). The reaction chamber has a process chamber base formed by a substrate support (4), a process chamber cover (5, 6) opposite to the base, and a gas inlet element (7) in allowing a process gas that is producing the thin film to enter. The process chamber cover (5, 6) has a cover plate (6) which is arranged below a cover plate support (5) and extends substantially across the entire horizontal surface of the substrate support (4). The invention further improve the said device. For this purpose, the gas inlet element (7) that located in the lateral center of the process chamber (3) is fed through an opening of the substrate support (4) and the cover plate (6) which is secured to the cover support (5) can be replaced through a lateral opening (9) of the reactor housing (1).
TW95143357A 2005-11-25 2006-11-23 A CVD reactor that can replace the reaction chamber roof TWI402373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200510056324 DE102005056324A1 (en) 2005-11-25 2005-11-25 CVD reactor with exchangeable process chamber ceiling

Publications (2)

Publication Number Publication Date
TW200728496A true TW200728496A (en) 2007-08-01
TWI402373B TWI402373B (en) 2013-07-21

Family

ID=37728344

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95143357A TWI402373B (en) 2005-11-25 2006-11-23 A CVD reactor that can replace the reaction chamber roof

Country Status (4)

Country Link
EP (1) EP1954852A1 (en)
DE (1) DE102005056324A1 (en)
TW (1) TWI402373B (en)
WO (1) WO2007060143A1 (en)

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US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
DE102009025971A1 (en) 2009-06-15 2010-12-16 Aixtron Ag Method for setting up an epitaxial reactor
CN106884157B (en) 2011-03-04 2019-06-21 诺发系统公司 Mixed type ceramic showerhead
CN102231416A (en) * 2011-06-14 2011-11-02 泉州市博泰半导体科技有限公司 Chemical vapor deposition reaction equipment
DE202011103798U1 (en) * 2011-07-28 2012-10-29 Michael Harro Liese Quick release for reactors and converters
CN103765557A (en) * 2011-08-09 2014-04-30 三星电子株式会社 Vapor deposition apparatus
CN103422071B (en) * 2012-05-18 2015-06-17 中国地质大学（北京） Vacuum cavity chamber capable of rapidly changing gas-homogenizing mode
DE102012110125A1 (en) 2012-10-24 2014-04-24 Aixtron Se Device for treating substrates with a replaceable ceiling plate and method for replacing such a ceiling plate
KR102376429B1 (en) * 2013-12-18 2022-03-17 램 리써치 코포레이션 Seminconductor substrate processing apparatus including uniformity baffles
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
DE202018100363U1 (en) * 2018-01-23 2019-04-24 Aixtron Se Device for connecting a susceptor to a drive shaft
WO2021042116A1 (en) 2019-08-23 2021-03-04 Lam Research Corporation Thermally controlled chandelier showerhead
JP2022546404A (en) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション deposition of metal
DE102020103947A1 (en) 2020-02-14 2021-08-19 AIXTRON Ltd. CVD reactor and method of handling a process chamber ceiling plate
DE102023128850A1 (en) * 2023-03-21 2024-09-26 Aixtron Se Device for simultaneously depositing a layer on several substrates
CN117684262B (en) * 2024-02-04 2024-05-10 楚赟精工科技(上海)有限公司 Gas injection device and gas phase reaction equipment

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JPS6097622A (en) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd Epitaxial device
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
JPH0733576B2 (en) * 1989-11-29 1995-04-12 株式会社日立製作所 Sputter device, target exchanging device, and exchanging method thereof
JPH05230625A (en) * 1992-02-19 1993-09-07 Fujitsu Ltd Thin film manufacturing apparatus and thin film manufacturing method
JP3024940B2 (en) * 1992-06-24 2000-03-27 アネルバ株式会社 Substrate processing method and CVD processing method
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Also Published As

Publication number Publication date
TWI402373B (en) 2013-07-21
EP1954852A1 (en) 2008-08-13
WO2007060143A1 (en) 2007-05-31
DE102005056324A1 (en) 2007-06-06

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