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TW200725694A - Substrate heating device and substrate heating method - Google Patents

Substrate heating device and substrate heating method

Info

Publication number
TW200725694A
TW200725694A TW095129004A TW95129004A TW200725694A TW 200725694 A TW200725694 A TW 200725694A TW 095129004 A TW095129004 A TW 095129004A TW 95129004 A TW95129004 A TW 95129004A TW 200725694 A TW200725694 A TW 200725694A
Authority
TW
Taiwan
Prior art keywords
substrate
processing
gas
processing chamber
substrate heating
Prior art date
Application number
TW095129004A
Other languages
Chinese (zh)
Inventor
Takahiro Kitano
Takanori Nishi
Katsuya Okumura
Original Assignee
Tokyo Electron Ltd
Octec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Octec Inc filed Critical Tokyo Electron Ltd
Publication of TW200725694A publication Critical patent/TW200725694A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The substrate heating device is formed the substrate mount section inside the processing chamber, the evaporation section which evaporates the water, the supply path for supplying the carrier gas to the evaporation section, the gas supply path which supplies the processing gas including the vapor into the processing chamber, supplying the carrier gas to the evaporation section, and the control section which supplies the processing gas inside the processing chamber after the substrate is mounted on the substrate mount section and the temperature inside the processing chamber is higher than dew-point temperature of the processing gas. As for this device, because the substrate which is exposed can be heated with vapor atmosphere, when it is the resist where the energy does rate which can do the electron beam exposure of brief is small, it is possible to deteriorate the region which is the exposure area with heating processing sufficiently and also improve the line width precision.
TW095129004A 2005-08-24 2006-08-08 Substrate heating device and substrate heating method TW200725694A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005243357A JP2007059633A (en) 2005-08-24 2005-08-24 Substrate heating apparatus and substrate heating method

Publications (1)

Publication Number Publication Date
TW200725694A true TW200725694A (en) 2007-07-01

Family

ID=37771400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129004A TW200725694A (en) 2005-08-24 2006-08-08 Substrate heating device and substrate heating method

Country Status (3)

Country Link
JP (1) JP2007059633A (en)
TW (1) TW200725694A (en)
WO (1) WO2007023648A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508179B (en) * 2010-07-23 2015-11-11 Sunshine Pv Corp Annealing device for a thin-film solar cell
CN110233117A (en) * 2018-03-06 2019-09-13 株式会社斯库林集团 Substrate board treatment
TWI836726B (en) * 2017-08-18 2024-03-21 美商應用材料股份有限公司 High pressure and high temperature anneal chamber

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4775092B2 (en) * 2006-04-18 2011-09-21 凸版印刷株式会社 Heat treatment method for resist coated substrate
JP5194209B2 (en) * 2007-10-18 2013-05-08 日本フェンオール株式会社 Semiconductor processing unit and semiconductor manufacturing apparatus
JP5559656B2 (en) * 2010-10-14 2014-07-23 大日本スクリーン製造株式会社 Heat treatment apparatus and heat treatment method
JP6955073B2 (en) * 2016-12-08 2021-10-27 東京エレクトロン株式会社 Heat treatment method and heat treatment equipment
JP6781031B2 (en) * 2016-12-08 2020-11-04 東京エレクトロン株式会社 Substrate processing method and heat treatment equipment
JP7076204B2 (en) * 2017-12-20 2022-05-27 株式会社ディスコ Split device
JP7162541B2 (en) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM
JP7208813B2 (en) * 2019-02-08 2023-01-19 東京エレクトロン株式会社 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP7158549B2 (en) * 2020-10-15 2022-10-21 東京エレクトロン株式会社 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM AND COMPUTER-READABLE STORAGE MEDIUM

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2994501B2 (en) * 1991-09-13 1999-12-27 株式会社東芝 Pattern formation method
JPH09129535A (en) * 1995-10-30 1997-05-16 Tokyo Ohka Kogyo Co Ltd Thermal treatment equipment
JP3290943B2 (en) * 1997-01-16 2002-06-10 東京エレクトロン株式会社 Resist coating / developing apparatus and resist processing method
JP2002043215A (en) * 2000-07-28 2002-02-08 Sharp Corp Resist pattern forming method, semiconductor manufacturing apparatus, semiconductor device, and portable information terminal
JP4836363B2 (en) * 2000-08-11 2011-12-14 和之 杉田 Method for forming resist pattern
JP3414708B2 (en) * 2000-08-31 2003-06-09 クラリアント ジャパン 株式会社 Method of forming patterned polysilazane film
JP2003076018A (en) * 2001-08-31 2003-03-14 Kazuyuki Sugita Resist composition for surface layer imaging and pattern forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508179B (en) * 2010-07-23 2015-11-11 Sunshine Pv Corp Annealing device for a thin-film solar cell
TWI836726B (en) * 2017-08-18 2024-03-21 美商應用材料股份有限公司 High pressure and high temperature anneal chamber
CN110233117A (en) * 2018-03-06 2019-09-13 株式会社斯库林集团 Substrate board treatment
CN110233117B (en) * 2018-03-06 2023-02-24 株式会社斯库林集团 Substrate processing apparatus

Also Published As

Publication number Publication date
JP2007059633A (en) 2007-03-08
WO2007023648A1 (en) 2007-03-01

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