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TW200719471A - Non-volatile switching and memory devices using vertical nanotubes - Google Patents

Non-volatile switching and memory devices using vertical nanotubes

Info

Publication number
TW200719471A
TW200719471A TW095125062A TW95125062A TW200719471A TW 200719471 A TW200719471 A TW 200719471A TW 095125062 A TW095125062 A TW 095125062A TW 95125062 A TW95125062 A TW 95125062A TW 200719471 A TW200719471 A TW 200719471A
Authority
TW
Taiwan
Prior art keywords
memory devices
volatile switching
vertical nanotubes
volatile
devices
Prior art date
Application number
TW095125062A
Other languages
English (en)
Inventor
Toshiharu Furukawa
Mark Charles Hakey
Steven John Holmes
David Vaclav Horak
Koburger, Iii
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200719471A publication Critical patent/TW200719471A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
TW095125062A 2005-07-26 2006-07-10 Non-volatile switching and memory devices using vertical nanotubes TW200719471A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/161,183 US7352607B2 (en) 2005-07-26 2005-07-26 Non-volatile switching and memory devices using vertical nanotubes

Publications (1)

Publication Number Publication Date
TW200719471A true TW200719471A (en) 2007-05-16

Family

ID=37694097

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125062A TW200719471A (en) 2005-07-26 2006-07-10 Non-volatile switching and memory devices using vertical nanotubes

Country Status (7)

Country Link
US (2) US7352607B2 (zh)
EP (1) EP1938330A2 (zh)
JP (1) JP5004960B2 (zh)
KR (1) KR101004650B1 (zh)
CN (1) CN101542630A (zh)
TW (1) TW200719471A (zh)
WO (1) WO2008039166A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658574B (zh) * 2016-12-28 2019-05-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法
US11217597B2 (en) 2016-12-28 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352607B2 (en) * 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes
KR100695166B1 (ko) * 2006-01-03 2007-03-14 삼성전자주식회사 플러렌층을 구비한 상변화 메모리 소자의 제조 방법
KR100695167B1 (ko) * 2006-01-04 2007-03-14 삼성전자주식회사 다중벽 탄소나노튜브를 이용한 불휘발성 탄소나노튜브메모리 소자 및 그 동작방법
US7492046B2 (en) * 2006-04-21 2009-02-17 International Business Machines Corporation Electric fuses using CNTs (carbon nanotubes)
GB0618045D0 (en) * 2006-09-13 2006-10-25 Cavendish Kinetics Ltd Non-volatile memory bitcell
KR100799722B1 (ko) * 2006-12-12 2008-02-01 삼성전자주식회사 메모리 소자 및 그 제조 방법
KR100821082B1 (ko) * 2006-12-15 2008-04-08 동부일렉트로닉스 주식회사 반도체 소자 제조 방법
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
US7982209B2 (en) 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
KR100878016B1 (ko) * 2007-06-27 2009-01-13 삼성전자주식회사 스위치 소자 및 그 제조 방법
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US9019756B2 (en) * 2008-02-14 2015-04-28 Cavendish Kinetics, Ltd Architecture for device having cantilever electrode
KR20090120729A (ko) * 2008-05-20 2009-11-25 삼성전자주식회사 탄소나노튜브를 포함하는 메모리소자 및 이의 제조방법
US20090289524A1 (en) * 2008-05-21 2009-11-26 Michelangelo Rossetto Colloid motor: a mechanical mechanism that harnesses colloid forces to serve as a memory, oscillator, or amplifier in the mechanical domain; a hair cell mimesis
DE102008026134A1 (de) * 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
KR20100001747A (ko) * 2008-06-27 2010-01-06 삼성전자주식회사 도전 구조물, 이의 형성 방법, 수직 필러 트랜지스터 및이의 제조 방법.
KR20110008553A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
JP4913190B2 (ja) 2009-09-24 2012-04-11 株式会社東芝 不揮発性記憶装置
US8158967B2 (en) 2009-11-23 2012-04-17 Micron Technology, Inc. Integrated memory arrays
WO2012040092A1 (en) 2010-09-21 2012-03-29 Cavendish Kinetics, Inc Pull up electrode and waffle type microstructure
EP2557567A1 (en) 2011-08-09 2013-02-13 Thomson Licensing Programmable read-only memory device and method of writing the same
CN102855927B (zh) * 2012-08-20 2015-01-28 西北工业大学 抗辐射sram时序控制电路及时序处理方法
US9047985B2 (en) 2012-10-19 2015-06-02 Infineon Technologies Dresden Gmbh Apparatus, storage device, switch and methods, which include microstructures extending from a support
US20150369803A1 (en) * 2013-01-31 2015-12-24 Dina Katsir Low fluorescence utensils
CN106356451B (zh) * 2015-07-16 2019-01-11 华邦电子股份有限公司 电阻式存储装置
CN107634060B (zh) * 2016-07-18 2020-04-10 中芯国际集成电路制造(北京)有限公司 半导体器件及其制作方法、电子装置
CN111293555B (zh) * 2018-12-10 2021-10-15 北京清正泰科技术有限公司 一种具有碳纳米管的电刷-换向器结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US6088258A (en) * 1998-05-28 2000-07-11 International Business Machines Corporation Structures for reduced topography capacitors
SE0001123L (sv) * 2000-03-30 2001-10-01 Abb Ab Kraftkabel
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
US6625047B2 (en) * 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element
CN1643636A (zh) * 2001-06-14 2005-07-20 海珀里昂催化国际有限公司 采用改进的碳纳米管的场发射器件
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6433543B1 (en) * 2002-01-04 2002-08-13 Mohsen Shahinpoor Smart fiber optic magnetometer
US6515325B1 (en) 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
KR100790859B1 (ko) 2002-11-15 2008-01-03 삼성전자주식회사 수직 나노튜브를 이용한 비휘발성 메모리 소자
KR100493166B1 (ko) 2002-12-30 2005-06-02 삼성전자주식회사 수직나노튜브를 이용한 메모리
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7352607B2 (en) * 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658574B (zh) * 2016-12-28 2019-05-01 台灣積體電路製造股份有限公司 半導體裝置及其製造方法
US10770469B2 (en) 2016-12-28 2020-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US11217597B2 (en) 2016-12-28 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US11864381B2 (en) 2016-12-28 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
US12284806B2 (en) 2016-12-28 2025-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2008039166A3 (en) 2009-05-28
US7668004B2 (en) 2010-02-23
WO2008039166A2 (en) 2008-04-03
KR101004650B1 (ko) 2011-01-04
CN101542630A (zh) 2009-09-23
EP1938330A2 (en) 2008-07-02
US20080137397A1 (en) 2008-06-12
JP5004960B2 (ja) 2012-08-22
JP2009516362A (ja) 2009-04-16
KR20080055784A (ko) 2008-06-19
US20070025138A1 (en) 2007-02-01
US7352607B2 (en) 2008-04-01

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