TW200703626A - Composition for forming paraelectric thin film, paraelectric thin film and dielectric memory - Google Patents
Composition for forming paraelectric thin film, paraelectric thin film and dielectric memoryInfo
- Publication number
- TW200703626A TW200703626A TW095124714A TW95124714A TW200703626A TW 200703626 A TW200703626 A TW 200703626A TW 095124714 A TW095124714 A TW 095124714A TW 95124714 A TW95124714 A TW 95124714A TW 200703626 A TW200703626 A TW 200703626A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- composition
- forming
- paraelectric
- paraelectric thin
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 7
- 239000010409 thin film Substances 0.000 title abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 8
- 150000004703 alkoxides Chemical class 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 230000003301 hydrolyzing effect Effects 0.000 abstract 2
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
- C01G1/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/006—Compounds containing zirconium, with or without oxygen or hydrogen, and containing two or more other elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
- C01G29/006—Compounds containing bismuth, with or without oxygen or hydrogen, and containing two or more other elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005202167 | 2005-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200703626A true TW200703626A (en) | 2007-01-16 |
Family
ID=37636957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095124714A TW200703626A (en) | 2005-07-11 | 2006-07-06 | Composition for forming paraelectric thin film, paraelectric thin film and dielectric memory |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW200703626A (zh) |
| WO (1) | WO2007007561A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116332628A (zh) * | 2023-02-24 | 2023-06-27 | 齐鲁工业大学(山东省科学院) | 一种低介电常数硼酸盐微波介质陶瓷及制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2517255B1 (en) | 2009-12-25 | 2019-07-03 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
| JP5899615B2 (ja) * | 2010-03-18 | 2016-04-06 | 株式会社リコー | 絶縁膜の製造方法及び半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3989414B2 (ja) * | 2003-06-30 | 2007-10-10 | 沖電気工業株式会社 | 強誘電体キャパシタ、強誘電体キャパシタを具える半導体装置、強誘電体キャパシタの製造方法及び半導体装置の製造方法 |
| JP4603254B2 (ja) * | 2003-10-23 | 2010-12-22 | 日本曹達株式会社 | 金属酸化物ゾル液の製造方法、結晶質金属複酸化物ゾルおよび金属酸化物膜 |
-
2006
- 2006-06-29 WO PCT/JP2006/313029 patent/WO2007007561A1/ja not_active Ceased
- 2006-07-06 TW TW095124714A patent/TW200703626A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116332628A (zh) * | 2023-02-24 | 2023-06-27 | 齐鲁工业大学(山东省科学院) | 一种低介电常数硼酸盐微波介质陶瓷及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007007561A1 (ja) | 2007-01-18 |
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