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TW200702935A - Methods for manufacturing gray level mask and thin film transistor substrate - Google Patents

Methods for manufacturing gray level mask and thin film transistor substrate

Info

Publication number
TW200702935A
TW200702935A TW095109428A TW95109428A TW200702935A TW 200702935 A TW200702935 A TW 200702935A TW 095109428 A TW095109428 A TW 095109428A TW 95109428 A TW95109428 A TW 95109428A TW 200702935 A TW200702935 A TW 200702935A
Authority
TW
Taiwan
Prior art keywords
gray level
device pattern
pattern
level mask
mask
Prior art date
Application number
TW095109428A
Other languages
Chinese (zh)
Inventor
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200702935A publication Critical patent/TW200702935A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

The object of the present invention is to provide a gray level mask having alignment marks which are associated with a device pattern formed by using the gray level mask, and with gate electrodes or contact holes, having portions overlapping the device pattern, formed by using other photomasks. The gray level mask of the present invention comprises: a mask pattern corresponding to a first device pattern 30, for manufacturing a transferred substrate comprising the first device pattern 30 formed by using the gray level mask 20, and at least one second device pattern such as contact holes H, having portions overlapping the first device pattern 30, formed by using other photomasks, wherein the area of the mask pattern on the gray level mask 20 corresponding to the portion where the first device pattern 30 overlaps the second device pattern forms a semi-transparent portion; and a mark pattern 31, which is formed while the semi-transparent portion of the mask pattern is formed, and is associated with the second device pattern.
TW095109428A 2005-03-22 2006-03-20 Methods for manufacturing gray level mask and thin film transistor substrate TW200702935A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005082500A JP4693451B2 (en) 2005-03-22 2005-03-22 Method for manufacturing gray tone mask and method for manufacturing thin film transistor substrate

Publications (1)

Publication Number Publication Date
TW200702935A true TW200702935A (en) 2007-01-16

Family

ID=37015388

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109428A TW200702935A (en) 2005-03-22 2006-03-20 Methods for manufacturing gray level mask and thin film transistor substrate

Country Status (4)

Country Link
JP (1) JP4693451B2 (en)
KR (1) KR101016464B1 (en)
CN (2) CN1837956B (en)
TW (1) TW200702935A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468852B (en) * 2009-03-26 2015-01-11 Hoya Corp Reflective mask blank and methods of manufacturing the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4809752B2 (en) * 2006-11-01 2011-11-09 株式会社エスケーエレクトロニクス Halftone photomask and method for manufacturing the same
JP5044262B2 (en) * 2007-04-10 2012-10-10 株式会社エスケーエレクトロニクス Multi-tone photomask and manufacturing method thereof
JP5089362B2 (en) * 2007-12-13 2012-12-05 信越化学工業株式会社 Photomask and exposure method
KR101295235B1 (en) * 2008-08-15 2013-08-12 신에쓰 가가꾸 고교 가부시끼가이샤 Gray tone mask blank, gray tone mask, and method for forming product processing mark or product information mark
JP5306391B2 (en) * 2011-03-02 2013-10-02 株式会社東芝 Photo mask
JP2011186506A (en) * 2011-07-01 2011-09-22 Sk Electronics:Kk Halftone photomask
CN104718496B (en) * 2012-12-27 2019-06-28 爱发科成膜株式会社 Manufacturing method of phase shift mask
JP2015212720A (en) * 2014-05-01 2015-11-26 Hoya株式会社 Method of producing multi-gradation photo mask, the multi-gradation photo mask, and method of producing display device
TWI710850B (en) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 Photomask, photomask blank, method of manufacturing a photomask, and method of manufacturing an electronic device
JP7314523B2 (en) * 2019-02-14 2023-07-26 大日本印刷株式会社 Photomasks and photomask blanks for laser exposure
US20220390833A1 (en) * 2021-06-03 2022-12-08 Viavi Solutions Inc. Method of replicating a microstructure pattern
US12353128B2 (en) 2021-06-03 2025-07-08 Viavi Solutions Inc. Method of replicating a microstructure pattern

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0149221B1 (en) * 1994-06-27 1999-02-01 김주용 Photomasks for Semiconductor Manufacturing
JP2002189281A (en) * 2000-12-19 2002-07-05 Hoya Corp Gray tone mask and method for producing the same
JP2002189282A (en) * 2000-12-21 2002-07-05 Hitachi Ltd Halftone phase shift mask and method of manufacturing semiconductor device using the same
JP4410951B2 (en) * 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 Pattern forming method and manufacturing method of liquid crystal display device
KR100390801B1 (en) * 2001-05-24 2003-07-12 엘지.필립스 엘시디 주식회사 Manufacturing method for half tone photo mask
JP2003255510A (en) * 2002-03-01 2003-09-10 Hitachi Ltd Electronic device manufacturing method
JP2004341139A (en) * 2003-05-14 2004-12-02 Canon Inc Gray tone mask and method of manufacturing the same
JP4210166B2 (en) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 Gray-tone mask manufacturing method
JP4393290B2 (en) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 Method for manufacturing gray tone mask and method for manufacturing thin film transistor substrate
JP4108662B2 (en) * 2004-10-04 2008-06-25 Ｎｅｃ液晶テクノロジー株式会社 Thin film semiconductor device manufacturing method, resist pattern forming method, and photomask used in these methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468852B (en) * 2009-03-26 2015-01-11 Hoya Corp Reflective mask blank and methods of manufacturing the same

Also Published As

Publication number Publication date
CN1837956A (en) 2006-09-27
KR20060102524A (en) 2006-09-27
JP2006267262A (en) 2006-10-05
KR101016464B1 (en) 2011-02-24
CN101833236A (en) 2010-09-15
JP4693451B2 (en) 2011-06-01
CN1837956B (en) 2010-10-20

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