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TW200707107A - Positive resist composition and method for forming resist pattern - Google Patents

Positive resist composition and method for forming resist pattern

Info

Publication number
TW200707107A
TW200707107A TW095117925A TW95117925A TW200707107A TW 200707107 A TW200707107 A TW 200707107A TW 095117925 A TW095117925 A TW 095117925A TW 95117925 A TW95117925 A TW 95117925A TW 200707107 A TW200707107 A TW 200707107A
Authority
TW
Taiwan
Prior art keywords
group
acid
structural unit
dissolution inhibiting
dissociable dissolution
Prior art date
Application number
TW095117925A
Other languages
Chinese (zh)
Inventor
Toshikazu Takayama
Shoichi Fujita
Takayoshi Mori
Koji Yonemura
Takehito Seo
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200707107A publication Critical patent/TW200707107A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

A positive resist composition includes: a resin component (A) including an acid dissociable dissolution inhibiting group, which displays increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) which contains a structural unit (a1) derived from a hydroxystyrene, a structural unit (a2) including the acid dissociable dissolution inhibiting group, and a structural unit (a3) represented by a general formula (a3-1): (wherein R represents a hydrogen atom, an alkyl group, a fluorine atom, or a fluorinated alkyl group; R1 represents a hydrogen atom or the acid dissociable dissolution inhibiting group; A represents a single bond or a divalent organic group; and Ar represents an arylene group which may include a substituent group).
TW095117925A 2005-05-26 2006-05-19 Positive resist composition and method for forming resist pattern TW200707107A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005154523A JP4205078B2 (en) 2005-05-26 2005-05-26 Positive resist composition and resist pattern forming method

Publications (1)

Publication Number Publication Date
TW200707107A true TW200707107A (en) 2007-02-16

Family

ID=37451858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095117925A TW200707107A (en) 2005-05-26 2006-05-19 Positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP4205078B2 (en)
TW (1) TW200707107A (en)
WO (1) WO2006126433A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI744391B (en) * 2016-10-12 2021-11-01 盧森堡商Ａｚ電子材料盧森堡有限公司 Chemically amplified positive photoresist composition , use thereof and pattern forming method using same

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4781011B2 (en) * 2005-05-26 2011-09-28 東京応化工業株式会社 Resin resin and resist resin monomer
JP4905250B2 (en) 2007-05-18 2012-03-28 住友化学株式会社 Chemically amplified positive resist composition
JP5141106B2 (en) 2007-06-22 2013-02-13 住友化学株式会社 Chemically amplified positive resist composition and hydroxystyrene derivative
JP4998112B2 (en) 2007-06-27 2012-08-15 住友化学株式会社 Chemically amplified positive resist composition
JP5286102B2 (en) * 2009-02-06 2013-09-11 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
JP5557559B2 (en) 2009-03-11 2014-07-23 住友化学株式会社 Chemically amplified positive photoresist composition, polymer used in the composition, and compound leading to the structural unit of the polymer
JP5353639B2 (en) * 2009-11-02 2013-11-27 信越化学工業株式会社 Chemically amplified positive resist material, resist pattern forming method and plating pattern forming method using the same
TWI477911B (en) * 2009-12-15 2015-03-21 羅門哈斯電子材料有限公司 Photoresists and methods for use thereof
JP5745338B2 (en) * 2011-05-24 2015-07-08 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP6028687B2 (en) * 2013-07-11 2016-11-16 信越化学工業株式会社 Positive resist material, polymerizable monomer, polymer compound and pattern forming method using the same
JPWO2021246449A1 (en) * 2020-06-03 2021-12-09

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3506357B2 (en) * 1996-12-13 2004-03-15 東京応化工業株式会社 Base material for lithography
JP2003322970A (en) * 2002-04-26 2003-11-14 Tokyo Ohka Kogyo Co Ltd Positive resist composition and method for forming pattern by using the same
JP3597523B2 (en) * 2002-08-27 2004-12-08 東京応化工業株式会社 Base material for lithography
JP4393861B2 (en) * 2003-03-14 2010-01-06 東京応化工業株式会社 Magnetic film pattern formation method
JP2005309097A (en) * 2004-04-21 2005-11-04 Fuji Photo Film Co Ltd Photosensitive resin composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI744391B (en) * 2016-10-12 2021-11-01 盧森堡商Ａｚ電子材料盧森堡有限公司 Chemically amplified positive photoresist composition , use thereof and pattern forming method using same

Also Published As

Publication number Publication date
JP2006330401A (en) 2006-12-07
JP4205078B2 (en) 2009-01-07
WO2006126433A1 (en) 2006-11-30

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