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TW200636419A - Detecting excess current leakage of a CMOS device - Google Patents

Detecting excess current leakage of a CMOS device

Info

Publication number
TW200636419A
TW200636419A TW095105359A TW95105359A TW200636419A TW 200636419 A TW200636419 A TW 200636419A TW 095105359 A TW095105359 A TW 095105359A TW 95105359 A TW95105359 A TW 95105359A TW 200636419 A TW200636419 A TW 200636419A
Authority
TW
Taiwan
Prior art keywords
current leakage
excess current
mos
cmos device
cmos
Prior art date
Application number
TW095105359A
Other languages
Chinese (zh)
Other versions
TWI381262B (en
Inventor
Peter William Hughes
Original Assignee
Icera Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Icera Inc filed Critical Icera Inc
Publication of TW200636419A publication Critical patent/TW200636419A/en
Application granted granted Critical
Publication of TWI381262B publication Critical patent/TWI381262B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Amplifiers (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

A system (10, 90), apparatus (12, 30, 40, 50, 60, 70) and method (100) is disclosed for detecting excess current leakage between drain/source of a metal oxide semiconductor (MOS) transistor (36, 46) within a complementary MOS (CMOS) environment. A load control (32, 42) is arranged as a compliment to the MOS transistor. A comparator (34, 44) is electrically connected to the load control and the MOS transistor, and produces an output signal representative of the detection of a current leakage exceeding a threshold. In response to the received output signal indicating an excess current leakage, system voltage/frequency may be adjusted to prevent damage to the CMOS environment.
TW095105359A 2005-02-24 2006-02-17 Method and apparatus for detecting current leakage of in a mos transistor in a cmos environment and system having the said apparatus TWI381262B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/065,904 US7564274B2 (en) 2005-02-24 2005-02-24 Detecting excess current leakage of a CMOS device

Publications (2)

Publication Number Publication Date
TW200636419A true TW200636419A (en) 2006-10-16
TWI381262B TWI381262B (en) 2013-01-01

Family

ID=36912036

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105359A TWI381262B (en) 2005-02-24 2006-02-17 Method and apparatus for detecting current leakage of in a mos transistor in a cmos environment and system having the said apparatus

Country Status (5)

Country Link
US (1) US7564274B2 (en)
EP (1) EP1867047A2 (en)
JP (1) JP4965464B2 (en)
TW (1) TWI381262B (en)
WO (1) WO2006090125A2 (en)

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US9547037B2 (en) * 2014-02-19 2017-01-17 Nxp Usa, Inc. System and method for evaluating a capacitive interface
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US9618560B2 (en) 2015-07-01 2017-04-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Apparatus and method to monitor thermal runaway in a semiconductor device
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Also Published As

Publication number Publication date
JP4965464B2 (en) 2012-07-04
EP1867047A2 (en) 2007-12-19
US20060186946A1 (en) 2006-08-24
TWI381262B (en) 2013-01-01
JP2008537098A (en) 2008-09-11
WO2006090125A3 (en) 2007-01-18
US7564274B2 (en) 2009-07-21
WO2006090125A2 (en) 2006-08-31

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