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TW200634175A - Method of depositing thin film using ald process - Google Patents

Method of depositing thin film using ald process

Info

Publication number
TW200634175A
TW200634175A TW095108103A TW95108103A TW200634175A TW 200634175 A TW200634175 A TW 200634175A TW 095108103 A TW095108103 A TW 095108103A TW 95108103 A TW95108103 A TW 95108103A TW 200634175 A TW200634175 A TW 200634175A
Authority
TW
Taiwan
Prior art keywords
reaction gas
chamber
thin film
gas
feeding
Prior art date
Application number
TW095108103A
Other languages
Chinese (zh)
Other versions
TWI312013B (en
Inventor
Hong-Joo Lim
Sang-Kwon Park
Sahng-Kyu Lee
Tae-Wook Seo
Ho-Seung Chang
Original Assignee
Ips Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050021876A external-priority patent/KR100640552B1/en
Application filed by Ips Ltd filed Critical Ips Ltd
Publication of TW200634175A publication Critical patent/TW200634175A/en
Application granted granted Critical
Publication of TWI312013B publication Critical patent/TWI312013B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Provided is a method of depositing a thin film on a substrate using an ALD process. The method is performed using a thin film deposition device including a chamber for depositing the thin film on the substrate, a gas box for supplying a reaction gas and/or a purge gas to the chamber, and an exhaust pump for exhausting the reaction gas and/or the purge gas from the chamber and/or the gas box to the outside. In the method, a process cycle is preformed several times to deposit the thin film on the substrate. The process cycle includes a first feeding process of feeding a first reaction gas into the chamber, a first purge process of purging the first reaction gas from the chamber, a second feeding process of feeding a second reaction gas into the chamber, and a second purge process of purging the second reaction gas not reacting with the first reaction gas. Without supply of the first reaction gas and the second reaction gas, a pre-pressure change process is further performed between the repeated process cycles to decrease or increase the internal pressure of the chamber.
TW95108103A 2005-03-16 2006-03-10 Method of depositing thin film using ald process TWI312013B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050021876A KR100640552B1 (en) 2005-03-16 2005-03-16 ALD thin film deposition method
KR20050023650 2005-03-22

Publications (2)

Publication Number Publication Date
TW200634175A true TW200634175A (en) 2006-10-01
TWI312013B TWI312013B (en) 2009-07-11

Family

ID=36991896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95108103A TWI312013B (en) 2005-03-16 2006-03-10 Method of depositing thin film using ald process

Country Status (2)

Country Link
TW (1) TWI312013B (en)
WO (1) WO2006098565A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6751631B2 (en) * 2016-09-13 2020-09-09 東京エレクトロン株式会社 How to fill the recesses of the board with tungsten
WO2024076576A1 (en) * 2022-10-06 2024-04-11 Lam Research Corporation Improving chemistry utilization by increasing pressure during substrate processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385946B1 (en) * 1999-12-08 2003-06-02 삼성전자주식회사 Method for forming a metal layer by an atomic layer deposition and a semiconductor device with the metal layer as a barrier metal layer, an upper electrode, or a lower electrode of capacitor
KR19990074809A (en) * 1998-03-14 1999-10-05 윤종용 Thin Film Manufacturing Method
KR100275738B1 (en) * 1998-08-07 2000-12-15 윤종용 Method for producing thin film using atomatic layer deposition
KR100396694B1 (en) * 2000-07-27 2003-09-02 주식회사 하이닉스반도체 Method for forming thin film using atomic layer deposition
KR100449028B1 (en) * 2002-03-05 2004-09-16 삼성전자주식회사 Method for forming thin film using ALD
JP3670628B2 (en) * 2002-06-20 2005-07-13 株式会社東芝 Film forming method, film forming apparatus, and semiconductor device manufacturing method
KR100496903B1 (en) * 2002-10-12 2005-06-28 주식회사 아이피에스 ALD thin film deposition apparatus and method for depositing thin film
KR100521380B1 (en) * 2003-05-29 2005-10-12 삼성전자주식회사 Method of depositing a layer

Also Published As

Publication number Publication date
WO2006098565A1 (en) 2006-09-21
TWI312013B (en) 2009-07-11

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