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Priority claimed from US10/929,735external-prioritypatent/US6960811B2/en
Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Publication of TW200623390ApublicationCriticalpatent/TW200623390A/en
A low capacitance ESD protection device. The device comprises a substrate, a well of a first conductivity type in the substrate, a first and second transistor of the first conductivity type respectively on two sides of the well, a guard ring of a second conductivity type in the substrate, surrounding the well, and the first and second transistor, and a doped region of the second conductivity type in the well, wherein profiles of a drain and source region of each of the first and second transistor are un-symmetrical, an area of the drain region is smaller than that of the source region in each of the first and second transistor, and the distance between the drain region and the well exceeds that between the source region and the well.
TW094129278A2004-08-302005-08-26Low capacitance ESD protection device and integrated circuit including the same
TW200623390A
(en)
MOS transistor including multi-work function metal nitride gate electrode, CMOS integrated circuit device including same, and related methods of manufacture