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TW200629533A - Solid-state image pickup element - Google Patents

Solid-state image pickup element

Info

Publication number
TW200629533A
TW200629533A TW094137786A TW94137786A TW200629533A TW 200629533 A TW200629533 A TW 200629533A TW 094137786 A TW094137786 A TW 094137786A TW 94137786 A TW94137786 A TW 94137786A TW 200629533 A TW200629533 A TW 200629533A
Authority
TW
Taiwan
Prior art keywords
gettering region
photoelectric converting
pixel
image pickup
solid
Prior art date
Application number
TW094137786A
Other languages
Chinese (zh)
Inventor
Atsushi Kamashita
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200629533A publication Critical patent/TW200629533A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

In a solid-state image pickup element of the present invention, a plurality of pixels provided with a photoelectric converting part and an emitting part are formed on a silicon substrate. The photoelectric converting part accumulates charges of a quantity that corresponds to incident light. The emitting part outputs the charges accumulated by the photoelectric converting part as pixel signals. In a semiconductor element region formed on a silicon substrate surface, a gettering region is formed for each pixel. An acceptor type impurity is diffused in the gettering region so that the product of an area rate of the gettering region occupied within one pixel and the number of the acceptor type impurity atoms per unit area in the gettering region is 3x106 μm-2 or more. The product of 3x106 μm-2 is obtained based on experimental data and is a value that can surely reduce dark current.
TW094137786A 2004-10-29 2005-10-28 Solid-state image pickup element TW200629533A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004315331 2004-10-29
JP2004371498 2004-12-22

Publications (1)

Publication Number Publication Date
TW200629533A true TW200629533A (en) 2006-08-16

Family

ID=36227631

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137786A TW200629533A (en) 2004-10-29 2005-10-28 Solid-state image pickup element

Country Status (2)

Country Link
TW (1) TW200629533A (en)
WO (1) WO2006046385A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4630907B2 (en) * 2008-03-03 2011-02-09 シャープ株式会社 Solid-state imaging device and electronic information device
CN114830631A (en) * 2019-12-26 2022-07-29 索尼半导体解决方案公司 Solid-state imaging element and imaging device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110053A (en) * 1991-10-14 1993-04-30 Matsushita Electron Corp Solid-state imaging device and manufacture thereof
JPH0982933A (en) * 1995-09-12 1997-03-28 Toshiba Corp Solid-state imaging device and method of manufacturing the same
JP4192305B2 (en) * 1998-08-27 2008-12-10 株式会社ニコン Solid-state image sensor
JP2001135816A (en) * 1999-11-10 2001-05-18 Nec Corp Semiconductor device and its manufacturing method
JP3840214B2 (en) * 2003-01-06 2006-11-01 キヤノン株式会社 Photoelectric conversion device, method for manufacturing photoelectric conversion device, and camera using the same

Also Published As

Publication number Publication date
WO2006046385A1 (en) 2006-05-04

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