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TW200629292A - Nonvolatile storage device and nonvolatile storage system - Google Patents

Nonvolatile storage device and nonvolatile storage system

Info

Publication number
TW200629292A
TW200629292A TW094137150A TW94137150A TW200629292A TW 200629292 A TW200629292 A TW 200629292A TW 094137150 A TW094137150 A TW 094137150A TW 94137150 A TW94137150 A TW 94137150A TW 200629292 A TW200629292 A TW 200629292A
Authority
TW
Taiwan
Prior art keywords
nonvolatile storage
memory
nonvolatile
storage device
multiple value
Prior art date
Application number
TW094137150A
Other languages
Chinese (zh)
Inventor
Kazuaki Tamura
Tomoaki Izumi
Tetsushi Kasahara
Masahiro Nakanishi
Kiminori Matsuno
Masayuki Toyama
Manabu Inoue
Toshiyuki Honda
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200629292A publication Critical patent/TW200629292A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A nonvolatile storage device, wherein data can be written and read by an access device, is introduced. The nonvolatile storage device is provided with a plurality of memory cells, where each memory cell is provided with a nonvolatile multiple value memory which has M number (M > 3) of threshold voltages and can store multiple value data, and a memory controller which controls data writing/reading of the nonvolatile multiple value memory. For data writing, the memory controller has a first control method wherein only N- number (N < M) of threshold voltage distributions are used among the threshold distributions of the memory cell of the nonvolatile multiple value memory, and a second control method wherein all the threshold voltage distributions are used.
TW094137150A 2004-10-29 2005-10-24 Nonvolatile storage device and nonvolatile storage system TW200629292A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004315451A JP2008020937A (en) 2004-10-29 2004-10-29 Nonvolatile memory device

Publications (1)

Publication Number Publication Date
TW200629292A true TW200629292A (en) 2006-08-16

Family

ID=36227668

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094137150A TW200629292A (en) 2004-10-29 2005-10-24 Nonvolatile storage device and nonvolatile storage system

Country Status (3)

Country Link
JP (1) JP2008020937A (en)
TW (1) TW200629292A (en)
WO (1) WO2006046425A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2660087C (en) * 2006-08-05 2014-09-23 Benhov Gmbh, Llc Memory configuration and method for calibrating read/write data based on performance characteristics of the memory configuration
KR100809320B1 (en) * 2006-09-27 2008-03-05 삼성전자주식회사 Mapping information management apparatus and method for nonvolatile memory supporting heterogeneous cell types
US7646636B2 (en) 2007-02-16 2010-01-12 Mosaid Technologies Incorporated Non-volatile memory with dynamic multi-mode operation
JP2009104729A (en) * 2007-10-24 2009-05-14 Toshiba Corp Nonvolatile semiconductor memory device
US7633798B2 (en) * 2007-11-21 2009-12-15 Micron Technology, Inc. M+N bit programming and M+L bit read for M bit memory cells
KR101092823B1 (en) * 2008-01-16 2011-12-12 후지쯔 가부시끼가이샤 Semiconductor storage device, controlling apparatus and controlling method
DE102008057681B3 (en) 2008-11-17 2009-12-10 Giesecke & Devrient Gmbh Method for the secure storage of data in a memory of a portable data carrier
JP2013196673A (en) * 2012-03-23 2013-09-30 Toshiba Corp Memory system
JP2014175031A (en) * 2013-03-08 2014-09-22 Toshiba Corp Semiconductor memory
JP2018160303A (en) 2017-03-23 2018-10-11 東芝メモリ株式会社 Semiconductor storage device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652691A (en) * 1992-07-30 1994-02-25 Toshiba Corp Semiconductor disk device
JP2000173281A (en) * 1998-12-04 2000-06-23 Sony Corp Semiconductor storage device
JP4282197B2 (en) * 2000-01-24 2009-06-17 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
WO2006046425A1 (en) 2006-05-04
JP2008020937A (en) 2008-01-31

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