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TW200614089A - Printed magnetic rom-mprom - Google Patents

Printed magnetic rom-mprom

Info

Publication number
TW200614089A
TW200614089A TW094107163A TW94107163A TW200614089A TW 200614089 A TW200614089 A TW 200614089A TW 094107163 A TW094107163 A TW 094107163A TW 94107163 A TW94107163 A TW 94107163A TW 200614089 A TW200614089 A TW 200614089A
Authority
TW
Taiwan
Prior art keywords
storage device
pattern
electro
magnetic material
read
Prior art date
Application number
TW094107163A
Other languages
English (en)
Inventor
Gavin Nicholas Phillips
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200614089A publication Critical patent/TW200614089A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/098Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1306Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/02Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using magnetic or inductive elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • H10B20/20Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Semiconductor Memories (AREA)
  • Recording Or Reproducing By Magnetic Means (AREA)
TW094107163A 2004-03-12 2005-03-09 Printed magnetic rom-mprom TW200614089A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04101018 2004-03-12

Publications (1)

Publication Number Publication Date
TW200614089A true TW200614089A (en) 2006-05-01

Family

ID=34960799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107163A TW200614089A (en) 2004-03-12 2005-03-09 Printed magnetic rom-mprom

Country Status (6)

Country Link
US (1) US20070205476A1 (zh)
EP (1) EP1728253A1 (zh)
KR (1) KR20070027515A (zh)
CN (1) CN1930629A (zh)
TW (1) TW200614089A (zh)
WO (1) WO2005091300A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006501562A (ja) * 2002-10-03 2006-01-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電磁配列を使用する記憶システム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB869452A (en) * 1958-12-26 1961-05-31 Ncr Co Process for providing base material with a magnetizable coating
GB9008918D0 (en) * 1990-04-20 1990-06-20 Ross William L Finger print sensor/digitizer
AU3709297A (en) * 1997-08-05 1999-03-01 Enix Corporation Fingerprint collation
AU2001245936A1 (en) * 2000-03-23 2001-10-03 Cross Match Technologies, Inc. Piezoelectric identification device and applications thereof
AU2003265059A1 (en) * 2002-10-03 2004-04-23 Koninklijke Philips Electronics N.V. Storage system using an array of electro-magnetic sensors
EP1550132A2 (en) * 2002-10-03 2005-07-06 Koninklijke Philips Electronics N.V. Programmable magnetic memory device fp-mram
KR20050053724A (ko) * 2002-10-03 2005-06-08 코닌클리케 필립스 일렉트로닉스 엔.브이. 프로그램가능 자기 메모리 장치

Also Published As

Publication number Publication date
US20070205476A1 (en) 2007-09-06
WO2005091300A1 (en) 2005-09-29
KR20070027515A (ko) 2007-03-09
EP1728253A1 (en) 2006-12-06
CN1930629A (zh) 2007-03-14

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