[go: up one dir, main page]

TW200600984A - Semiconductor device fabrication method - Google Patents

Semiconductor device fabrication method

Info

Publication number
TW200600984A
TW200600984A TW093136954A TW93136954A TW200600984A TW 200600984 A TW200600984 A TW 200600984A TW 093136954 A TW093136954 A TW 093136954A TW 93136954 A TW93136954 A TW 93136954A TW 200600984 A TW200600984 A TW 200600984A
Authority
TW
Taiwan
Prior art keywords
film
hard mask
low
dielectric
semiconductor device
Prior art date
Application number
TW093136954A
Other languages
English (en)
Other versions
TWI366873B (zh
Inventor
Kazuaki Inukai
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200600984A publication Critical patent/TW200600984A/zh
Application granted granted Critical
Publication of TWI366873B publication Critical patent/TWI366873B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW093136954A 2004-06-28 2004-11-30 Semiconductor device fabrication method TW200600984A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004189380A JP2006013190A (ja) 2004-06-28 2004-06-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200600984A true TW200600984A (en) 2006-01-01
TWI366873B TWI366873B (zh) 2012-06-21

Family

ID=34954175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093136954A TW200600984A (en) 2004-06-28 2004-11-30 Semiconductor device fabrication method

Country Status (4)

Country Link
US (1) US7169708B2 (zh)
JP (1) JP2006013190A (zh)
FR (1) FR2872342B1 (zh)
TW (1) TW200600984A (zh)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464804B (zh) * 2008-01-30 2014-12-11 Tokyo Electron Ltd A post-treatment method of an amorphous hydrocarbon film and a method of manufacturing the same
TWI512823B (zh) * 2010-06-11 2015-12-11 Tokyo Electron Ltd 金屬內連線之絕緣堆疊的選擇性蝕刻方法
TWI638062B (zh) * 2013-10-24 2018-10-11 蘭姆研究公司 用於含矽碳膜之化學氣相沉積之基態氫自由基來源
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US10472714B2 (en) 2013-05-31 2019-11-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10580690B2 (en) 2016-11-23 2020-03-03 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
US11049716B2 (en) 2015-04-21 2021-06-29 Lam Research Corporation Gap fill using carbon-based films
US11264234B2 (en) 2012-06-12 2022-03-01 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US12359311B2 (en) 2012-06-12 2025-07-15 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7704887B2 (en) * 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7815815B2 (en) 2006-08-01 2010-10-19 Sony Corporation Method and apparatus for processing the peripheral and edge portions of a wafer after performance of a surface treatment thereon
JP5082338B2 (ja) * 2006-08-25 2012-11-28 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR100778869B1 (ko) * 2006-09-06 2007-11-22 동부일렉트로닉스 주식회사 반도체 소자의 콘택 형성 방법
JP4237216B2 (ja) * 2006-10-05 2009-03-11 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7749892B2 (en) * 2006-11-29 2010-07-06 International Business Machines Corporation Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
US7981308B2 (en) * 2007-12-31 2011-07-19 Robert Bosch Gmbh Method of etching a device using a hard mask and etch stop layer
DE102009023251B4 (de) * 2009-05-29 2011-02-24 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zur Herstellung eines Kontaktelements mit großem Aspektverhältnis und mit einer günstigeren Form in einem Halbleiterbauelement zur Verbesserung der Abscheidung einer Beschichtung
US20110073998A1 (en) * 2009-09-29 2011-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Adhesion Promotion Layer For A Semiconductor Device
DE102010002454A1 (de) * 2010-02-26 2011-09-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Metallisierungssystem eines Halbleiterbauelements mit verrundeten Verbindungen, die durch Hartmaskenverrundung hergestellt sind
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US9039911B2 (en) * 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US9059250B2 (en) * 2012-02-17 2015-06-16 International Business Machines Corporation Lateral-dimension-reducing metallic hard mask etch
US10211310B2 (en) 2012-06-12 2019-02-19 Novellus Systems, Inc. Remote plasma based deposition of SiOC class of films
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
KR101586181B1 (ko) 2013-03-28 2016-01-15 시바우라 메카트로닉스 가부시끼가이샤 적재대 및 플라즈마 처리 장치
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US9728445B2 (en) * 2014-01-22 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming conducting via and damascene structure
JP5846335B1 (ja) * 2014-03-26 2016-01-20 東レ株式会社 半導体装置の製造方法及び半導体装置
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9406690B2 (en) * 2014-12-16 2016-08-02 Sandisk Technologies Llc Contact for vertical memory with dopant diffusion stopper and associated fabrication method
US9837270B1 (en) 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
US12431353B2 (en) * 2022-09-16 2025-09-30 Nanya Technology Corporation Hardmask structure and method of forming semiconductor structure
KR20240086974A (ko) * 2022-12-12 2024-06-19 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150516A (ja) * 1998-09-02 2000-05-30 Tokyo Electron Ltd 半導体装置の製造方法
JP2000091422A (ja) * 1998-09-16 2000-03-31 Sony Corp 多層配線構造の製造方法
US6346489B1 (en) 1999-09-02 2002-02-12 Applied Materials, Inc. Precleaning process for metal plug that minimizes damage to low-κ dielectric
WO2001029879A2 (en) 1999-10-20 2001-04-26 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
WO2001059825A1 (en) 2000-02-08 2001-08-16 Matrix Integrated Systems, Inc. Method for removing photoresist and residues from semiconductor device surfaces
US6951823B2 (en) 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
US6630406B2 (en) 2001-05-14 2003-10-07 Axcelis Technologies Plasma ashing process
US6506692B2 (en) * 2001-05-30 2003-01-14 Intel Corporation Method of making a semiconductor device using a silicon carbide hard mask
US20030008490A1 (en) 2001-07-09 2003-01-09 Guoqiang Xing Dual hardmask process for the formation of copper/low-k interconnects
US6806203B2 (en) * 2002-03-18 2004-10-19 Applied Materials Inc. Method of forming a dual damascene structure using an amorphous silicon hard mask
EP1385201B1 (en) 2002-07-24 2012-09-05 Samsung Electronics Co., Ltd. Method of fabricating dual damascene interconnections of microelectronic device
JP2004087744A (ja) 2002-08-27 2004-03-18 Hitachi Ltd 半導体装置の製造方法
US7279353B2 (en) 2003-04-02 2007-10-09 Micron Technology, Inc. Passivation planarization
TWI235455B (en) 2003-05-21 2005-07-01 Semiconductor Leading Edge Tec Method for manufacturing semiconductor device
US7253524B2 (en) * 2003-11-25 2007-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Copper interconnects
US7015133B2 (en) * 2004-04-14 2006-03-21 Taiwan Semiconductor Manufacturing Company Dual damascene structure formed of low-k dielectric materials

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8936829B2 (en) 2008-01-30 2015-01-20 Tokyo Electron Limited Method of aftertreatment of amorphous hydrocarbon film and method for manufacturing electronic device by using the aftertreatment method
TWI464804B (zh) * 2008-01-30 2014-12-11 Tokyo Electron Ltd A post-treatment method of an amorphous hydrocarbon film and a method of manufacturing the same
TWI512823B (zh) * 2010-06-11 2015-12-11 Tokyo Electron Ltd 金屬內連線之絕緣堆疊的選擇性蝕刻方法
US11264234B2 (en) 2012-06-12 2022-03-01 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US12359311B2 (en) 2012-06-12 2025-07-15 Lam Research Corporation Conformal deposition of silicon carbide films using heterogeneous precursor interaction
US12334332B2 (en) 2012-06-12 2025-06-17 Lam Research Corporation Remote plasma based deposition of silicon carbide films using silicon-containing and carbon-containing precursors
US12272547B2 (en) 2012-06-12 2025-04-08 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US11894227B2 (en) 2012-06-12 2024-02-06 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10472714B2 (en) 2013-05-31 2019-11-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US11680314B2 (en) 2013-05-31 2023-06-20 Novellus Systems, Inc. Films of desired composition and film properties
US11680315B2 (en) 2013-05-31 2023-06-20 Novellus Systems, Inc. Films of desired composition and film properties
US11708634B2 (en) 2013-05-31 2023-07-25 Novellus Systems, Inc. Films of desired composition and film properties
US11732350B2 (en) 2013-05-31 2023-08-22 Novellus Systems, Inc. Films of desired composition and film properties
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
TWI638062B (zh) * 2013-10-24 2018-10-11 蘭姆研究公司 用於含矽碳膜之化學氣相沉積之基態氫自由基來源
US11049716B2 (en) 2015-04-21 2021-06-29 Lam Research Corporation Gap fill using carbon-based films
US10580690B2 (en) 2016-11-23 2020-03-03 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication
US10840087B2 (en) 2018-07-20 2020-11-17 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
US11848199B2 (en) 2018-10-19 2023-12-19 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
US12300488B2 (en) 2018-10-19 2025-05-13 Lam Research Corporation Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

Also Published As

Publication number Publication date
TWI366873B (zh) 2012-06-21
US7169708B2 (en) 2007-01-30
JP2006013190A (ja) 2006-01-12
FR2872342A1 (fr) 2005-12-30
FR2872342B1 (fr) 2008-07-04
US20050287811A1 (en) 2005-12-29

Similar Documents

Publication Publication Date Title
TW200600984A (en) Semiconductor device fabrication method
CN1319133C (zh) 有机硅酸盐玻璃的低k蚀刻应用中蚀刻后的光刻胶剥离
TWI375991B (en) Method for multi-layer resist plasma etch
US7399712B1 (en) Method for etching organic hardmasks
US6844266B2 (en) Anisotropic etching of organic-containing insulating layers
US6919278B2 (en) Method for etching silicon carbide
US8394722B2 (en) Bi-layer, tri-layer mask CD control
US7084070B1 (en) Treatment for corrosion in substrate processing
KR102494959B1 (ko) 플라즈마 에칭 방법
US6777344B2 (en) Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
TWI478234B (zh) 氮化矽膜之蝕刻方法
TWI587390B (zh) 用以蝕刻有機硬遮罩之方法
US20020111036A1 (en) Unique process chemistry for etching organic low-k materials
KR101688231B1 (ko) Ｃｏ2/ｃｏ계 처리를 이용하여 기판을 애싱하기 위한 저손상 방법
KR101889107B1 (ko) 저 유전상수 손상을 감소시키도록 노출된 저 유전상수 표면에 ＳｉＯＣｌ-함유 층을 형성하는 방법
WO2007120573A3 (en) Plasma dielectric etch process including ex-situ backside polumer removal for low-dielectric constant material
TWI284370B (en) Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
USRE39273E1 (en) Hard masking method for forming patterned oxygen containing plasma etchable layer
US6900002B1 (en) Antireflective bi-layer hardmask including a densified amorphous carbon layer
US20050003310A1 (en) Etching process including plasma pretreatment for generating fluorine-free carbon-containing polymer on a photoresist pattern
TWI253691B (en) Plasma treatment and etching process for ultra-thin dielectric films
TW497169B (en) NH3 plasma descumming and resist stripping in semiconductor applications
TW200619873A (en) Method for stripping photoresist from etched wafer
JP2017050413A (ja) プラズマエッチング方法
KR20060123144A (ko) 포토레지스트 스트립 동안의 배리어 재료의 손실 최소화

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees