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TW200608518A - Fabrication of interconnect structures incorporating dielectrics coated by plasma free deposition methods - Google Patents

Fabrication of interconnect structures incorporating dielectrics coated by plasma free deposition methods

Info

Publication number
TW200608518A
TW200608518A TW094118329A TW94118329A TW200608518A TW 200608518 A TW200608518 A TW 200608518A TW 094118329 A TW094118329 A TW 094118329A TW 94118329 A TW94118329 A TW 94118329A TW 200608518 A TW200608518 A TW 200608518A
Authority
TW
Taiwan
Prior art keywords
interconnect structures
fabrication
deposition methods
plasma free
structures incorporating
Prior art date
Application number
TW094118329A
Other languages
English (en)
Inventor
Elbert E Huang
Hyung-Jun Kim
Robert D Miller
Satya V Nitta
Sampath Purushothaman
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200608518A publication Critical patent/TW200608518A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
TW094118329A 2004-06-04 2005-06-03 Fabrication of interconnect structures incorporating dielectrics coated by plasma free deposition methods TW200608518A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57692404P 2004-06-04 2004-06-04

Publications (1)

Publication Number Publication Date
TW200608518A true TW200608518A (en) 2006-03-01

Family

ID=35503815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118329A TW200608518A (en) 2004-06-04 2005-06-03 Fabrication of interconnect structures incorporating dielectrics coated by plasma free deposition methods

Country Status (6)

Country Link
US (1) US20080166870A1 (zh)
EP (1) EP1761946A2 (zh)
JP (1) JP2008502142A (zh)
CN (1) CN1954412A (zh)
TW (1) TW200608518A (zh)
WO (1) WO2005122195A2 (zh)

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JP5019741B2 (ja) * 2005-11-30 2012-09-05 東京エレクトロン株式会社 半導体装置の製造方法および基板処理システム
JP2007273494A (ja) * 2006-03-30 2007-10-18 Fujitsu Ltd 絶縁膜形成用組成物及び半導体装置の製造方法
US20070232047A1 (en) * 2006-03-31 2007-10-04 Masanaga Fukasawa Damage recovery method for low K layer in a damascene interconnection
US7649239B2 (en) * 2006-05-04 2010-01-19 Intel Corporation Dielectric spacers for metal interconnects and method to form the same
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
KR100900225B1 (ko) * 2006-10-31 2009-06-02 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 구리배선 형성방법
US7666781B2 (en) * 2006-11-22 2010-02-23 International Business Machines Corporation Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures
US7871923B2 (en) * 2007-01-26 2011-01-18 Taiwan Semiconductor Maufacturing Company, Ltd. Self-aligned air-gap in interconnect structures
JP4977508B2 (ja) * 2007-03-26 2012-07-18 アイメック ダメージの入った多孔性誘電体の処理方法
US7678673B2 (en) * 2007-08-01 2010-03-16 International Business Machines Corporation Strengthening of a structure by infiltration
JP5014356B2 (ja) * 2009-01-15 2012-08-29 パナソニック株式会社 半導体装置の製造方法
US8889235B2 (en) * 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US9018100B2 (en) * 2010-11-10 2015-04-28 Western Digital (Fremont), Llc Damascene process using PVD sputter carbon film as CMP stop layer for forming a magnetic recording head
US8492170B2 (en) * 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8735283B2 (en) * 2011-06-23 2014-05-27 International Business Machines Corporation Method for forming small dimension openings in the organic masking layer of tri-layer lithography
US8450212B2 (en) * 2011-06-28 2013-05-28 International Business Machines Corporation Method of reducing critical dimension process bias differences between narrow and wide damascene wires
US9960110B2 (en) 2011-12-30 2018-05-01 Intel Corporation Self-enclosed asymmetric interconnect structures
US8772938B2 (en) 2012-12-04 2014-07-08 Intel Corporation Semiconductor interconnect structures
JP6415808B2 (ja) * 2012-12-13 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
WO2014126117A1 (ja) * 2013-02-12 2014-08-21 日立化成株式会社 バリア層形成用組成物、バリア層付き半導体基板、太陽電池用基板の製造方法及び太陽電池素子の製造方法
US20150206798A1 (en) * 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect Structure And Method of Forming
US9653345B1 (en) * 2016-01-07 2017-05-16 United Microelectronics Corp. Method of fabricating semiconductor structure with improved critical dimension control
CN110858578B (zh) * 2018-08-23 2021-07-13 联华电子股份有限公司 管芯封环及其制造方法
CN111540677B (zh) * 2020-05-28 2023-03-21 绍兴同芯成集成电路有限公司 一种三层阶梯状沟槽晶体管的制造工艺
CN113808996B (zh) * 2020-06-12 2025-09-16 中芯国际集成电路制造(上海)有限公司 半导体结构及半导体结构的形成方法
CN119361323A (zh) * 2024-09-30 2025-01-24 同济大学 一种高温储能用的电介质薄膜及其制备方法和装置

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US6413854B1 (en) * 1999-08-24 2002-07-02 International Business Machines Corp. Method to build multi level structure
US6562725B2 (en) * 2001-07-05 2003-05-13 Taiwan Semiconductor Manufacturing Co., Ltd Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers
US6657304B1 (en) * 2002-06-06 2003-12-02 Advanced Micro Devices, Inc. Conformal barrier liner in an integrated circuit interconnect
US20040084774A1 (en) * 2002-11-02 2004-05-06 Bo Li Gas layer formation materials
US6869876B2 (en) * 2002-11-05 2005-03-22 Air Products And Chemicals, Inc. Process for atomic layer deposition of metal films

Also Published As

Publication number Publication date
WO2005122195A2 (en) 2005-12-22
CN1954412A (zh) 2007-04-25
US20080166870A1 (en) 2008-07-10
EP1761946A2 (en) 2007-03-14
WO2005122195A3 (en) 2006-06-22
JP2008502142A (ja) 2008-01-24

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