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TW200604720A - Projection optical system and pattern writing apparatus - Google Patents

Projection optical system and pattern writing apparatus

Info

Publication number
TW200604720A
TW200604720A TW094112013A TW94112013A TW200604720A TW 200604720 A TW200604720 A TW 200604720A TW 094112013 A TW094112013 A TW 094112013A TW 94112013 A TW94112013 A TW 94112013A TW 200604720 A TW200604720 A TW 200604720A
Authority
TW
Taiwan
Prior art keywords
mirror
optical system
projection optical
writing apparatus
pattern writing
Prior art date
Application number
TW094112013A
Other languages
Chinese (zh)
Other versions
TWI275822B (en
Inventor
Yasuyuki Koyagi
Original Assignee
Dainippon Screen Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200604720A publication Critical patent/TW200604720A/en
Application granted granted Critical
Publication of TWI275822B publication Critical patent/TWI275822B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70075Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A projection optical system (6) comprises a first mirror member (61) having a meniscus lens (612) on which a concave mirror (611) whose center of curvature is positioned at a reference point (P1) is formed as a back-surface mirror and a second mirror member (62) having a meniscus lens (622) on which a convex mirror (621) whose center of curvature is positioned around the reference point (P1) is formed as a back-surface mirror. Light enters the first mirror member (61) in parallel with a center axis (J1) from object side, and the light is reflected on the concave mirror (611), the convex mirror (612) and the concave mirror (611), and goes out in parallel with the center axis (J1) and an image is formed. It is realized in the projection optical system (6) where light is reflected three times between a concave mirror and a convex mirror to reduce aberration by the meniscus lenses (612, 622).
TW094112013A 2004-06-01 2005-04-15 Projection optical system and pattern writing apparatus TWI275822B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004162716A JP2005345582A (en) 2004-06-01 2004-06-01 Projection optical system and pattern-plotting device

Publications (2)

Publication Number Publication Date
TW200604720A true TW200604720A (en) 2006-02-01
TWI275822B TWI275822B (en) 2007-03-11

Family

ID=35498054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112013A TWI275822B (en) 2004-06-01 2005-04-15 Projection optical system and pattern writing apparatus

Country Status (4)

Country Link
JP (1) JP2005345582A (en)
KR (1) KR100718194B1 (en)
CN (1) CN100395582C (en)
TW (1) TWI275822B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414822B (en) * 2008-07-09 2013-11-11 Canon Kk Projection optics, exposure apparatus and component manufacturing method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006038455A1 (en) * 2006-08-16 2008-02-21 Carl Zeiss Smt Ag Optical system for semiconductor lithography, has adjusting unit positioning optical component, where contact points of adjusting unit at optical component is selected, such that no moments develop at optical component
JP4985308B2 (en) * 2007-08-31 2012-07-25 大日本印刷株式会社 Exposure apparatus, photomask and exposure method
DE102007051669A1 (en) * 2007-10-26 2009-04-30 Carl Zeiss Smt Ag Imaging optics, projection exposure apparatus for microlithography with such an imaging optical system and method for producing a microstructured component with such a projection exposure apparatus
JP5116726B2 (en) 2009-06-01 2013-01-09 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP6386896B2 (en) 2014-12-02 2018-09-05 キヤノン株式会社 Projection optical system, exposure apparatus, and device manufacturing method
TWI636292B (en) * 2017-06-08 2018-09-21 昭朗精密工業有限公司 Projector and its projection lens

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6129815A (en) * 1984-07-23 1986-02-10 Nippon Kogaku Kk <Nikon> Reflex reduction projecting optical system
JPH088169A (en) * 1994-06-23 1996-01-12 Nikon Corp Exposure equipment
CN1114942A (en) * 1994-07-11 1996-01-17 代心淑 Wide-angle mirror with immersion type convex mirror for motor vehicle
JPH0845824A (en) * 1994-08-03 1996-02-16 Toshiba Corp Exposure equipment
US5739964A (en) * 1995-03-22 1998-04-14 Etec Systems, Inc. Magnification correction for small field scanning
JPH09180985A (en) * 1995-12-25 1997-07-11 Nikon Corp Projection exposure equipment
JP4655332B2 (en) * 2000-05-26 2011-03-23 株式会社ニコン Exposure apparatus, exposure apparatus adjustment method, and microdevice manufacturing method
DE10115875A1 (en) * 2001-03-30 2002-10-10 Heidelberger Druckmasch Ag Imaging device for a printing form with macro optics of the opener type
JP4122476B2 (en) 2002-06-04 2008-07-23 株式会社オーク製作所 Projection exposure optical system and projection exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414822B (en) * 2008-07-09 2013-11-11 Canon Kk Projection optics, exposure apparatus and component manufacturing method

Also Published As

Publication number Publication date
TWI275822B (en) 2007-03-11
KR100718194B1 (en) 2007-05-15
JP2005345582A (en) 2005-12-15
CN100395582C (en) 2008-06-18
CN1704797A (en) 2005-12-07
KR20060045059A (en) 2006-05-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees