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TW200512315A - Etching solution for titanium-containing layer and method for etching titanium-containing layer - Google Patents

Etching solution for titanium-containing layer and method for etching titanium-containing layer

Info

Publication number
TW200512315A
TW200512315A TW093124063A TW93124063A TW200512315A TW 200512315 A TW200512315 A TW 200512315A TW 093124063 A TW093124063 A TW 093124063A TW 93124063 A TW93124063 A TW 93124063A TW 200512315 A TW200512315 A TW 200512315A
Authority
TW
Taiwan
Prior art keywords
titanium
etching
containing layer
silicon
etching solution
Prior art date
Application number
TW093124063A
Other languages
Chinese (zh)
Inventor
Makoto Ishikawa
Yasuhiro Kawase
Noriyuki Saitou
Original Assignee
Mitsubishi Chem Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chem Corp filed Critical Mitsubishi Chem Corp
Publication of TW200512315A publication Critical patent/TW200512315A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2456—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • C03C17/256—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/106—Other heavy metals refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/212—TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C03C2218/33—Partly or completely removing a coating by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

A titanium-containing layer which is formed on a silicon substrate or a silicate glass substrate and mainly contains one or more substances selected from a group consisting of titanium, titanium oxides, titanium nitrides and titanium oxynitrides is selectively etched at a high etching rate without eroding the substrate. Disclosed is an etching solution for etching a titanium-containing layer which is formed on a silicon substrate or a silicate glass substrate and mainly contains one or more substances selected from the group consisting of titanium, titanium oxides, titanium nitrides and titanium oxynitrides. This etching solution contains a silicofluoric acid. Also disclosed is a method for etching a titanium-containing layer formed on a silicon substrate or a silicate glass substrate using such an etching solution. The silicofluoric acid is a substance produced through a reaction between a hydrofluoric acid and silicon or a silicon oxide. While the silicofluoric acid is inactive against silicon or silicate glasses, it exhibits sufficient etching performance for titanium, titanium oxides, titanium nitrides and titanium oxynitrides. Consequently, the etching solution shows sufficient selectivity in etching of a titanium-containing layer formed on a silicon substrate or a silicate glass substrate.
TW093124063A 2003-08-19 2004-08-11 Etching solution for titanium-containing layer and method for etching titanium-containing layer TW200512315A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003295380 2003-08-19
JP2003415205A JP2005097715A (en) 2003-08-19 2003-12-12 Etching solution for titanium-containing layer and method for etching titanium-containing layer

Publications (1)

Publication Number Publication Date
TW200512315A true TW200512315A (en) 2005-04-01

Family

ID=34197164

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124063A TW200512315A (en) 2003-08-19 2004-08-11 Etching solution for titanium-containing layer and method for etching titanium-containing layer

Country Status (4)

Country Link
JP (1) JP2005097715A (en)
KR (1) KR20060039447A (en)
TW (1) TW200512315A (en)
WO (1) WO2005017230A1 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036116A (en) * 2005-07-29 2007-02-08 Renesas Technology Corp Semiconductor device manufacturing method
JP4826235B2 (en) * 2005-12-01 2011-11-30 三菱瓦斯化学株式会社 Semiconductor surface treatment agent
JP2007180304A (en) * 2005-12-28 2007-07-12 Seiko Epson Corp Pattern formation method and droplet discharge head
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
JP5047881B2 (en) * 2007-07-13 2012-10-10 東京応化工業株式会社 Titanium nitride stripping solution and method for stripping titanium nitride coating
JP5047712B2 (en) * 2007-07-13 2012-10-10 東京応化工業株式会社 Titanium nitride stripping solution and method for stripping titanium nitride coating
US8623236B2 (en) 2007-07-13 2014-01-07 Tokyo Ohka Kogyo Co., Ltd. Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
JP4941335B2 (en) * 2008-01-31 2012-05-30 三菱化学株式会社 Etching solution and etching method
JP5379389B2 (en) * 2008-03-05 2013-12-25 東京応化工業株式会社 Titanium removal liquid and method for removing titanium coating
JP5438907B2 (en) * 2008-03-05 2014-03-12 東京応化工業株式会社 Titanium removal liquid and method for removing titanium coating
JP2010109064A (en) * 2008-10-29 2010-05-13 Tosoh Corp Etching method
US20100147803A1 (en) * 2008-12-15 2010-06-17 General Electric Company Process for removing metallic material from casted substates, and related compositions
KR20130088847A (en) 2010-07-16 2013-08-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Aqueous cleaner for the removal of post-etch residues
JP5203435B2 (en) * 2010-09-17 2013-06-05 東京エレクトロン株式会社 Liquid processing method, recording medium recording a program for executing the liquid processing method, and liquid processing apparatus
EP2798669B1 (en) * 2011-12-28 2021-03-31 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
JP6008636B2 (en) * 2012-07-25 2016-10-19 キヤノン株式会社 Method for manufacturing liquid discharge head
JP6063206B2 (en) * 2012-10-22 2017-01-18 富士フイルム株式会社 Etching solution, etching method using the same, and semiconductor device manufacturing method
JP6017273B2 (en) 2012-11-14 2016-10-26 富士フイルム株式会社 Semiconductor substrate etching method and semiconductor device manufacturing method
JP6198384B2 (en) 2012-11-28 2017-09-20 富士フイルム株式会社 Semiconductor substrate etching method and semiconductor device manufacturing method
JP2014146623A (en) * 2013-01-25 2014-08-14 Fujifilm Corp Method of etching semiconductor substrate, etchant, and method of manufacturing semiconductor element
JP6063404B2 (en) * 2014-02-28 2017-01-18 富士フイルム株式会社 Etching solution, etching method using the same, and method for manufacturing semiconductor substrate product
WO2017091482A1 (en) * 2015-11-23 2017-06-01 Corning Incorporated Removal of inorganic coatings from glass substrates
KR102745413B1 (en) * 2019-12-26 2024-12-20 동우 화인켐 주식회사 Etching solution composition for a tungsten layer and titanium nitride layer, and method for etching tungsten and titanium nitride layer using the same, and an electromic device manufactured therefrom
KR20220041420A (en) 2020-09-25 2022-04-01 동우 화인켐 주식회사 An etchant composition for cobalt metal film, a pattern formation method and a manufacturing method of array substrate using the etchant composition, and an array substrate manufactured therefrom

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514407A (en) * 1966-09-28 1970-05-26 Lockheed Aircraft Corp Chemical polishing of titanium and titanium alloys
GB1344711A (en) * 1971-06-17 1974-01-23 Rolls Royce Method of etching a titanium or titanium alloy part
FR2431671A1 (en) * 1978-07-19 1980-02-15 Pechiney Aluminium Removing titaniferous incrustations from heat exchangers or reactors - by treatment with aq. liquor comprising hexa:fluosilicic acid and hydrofluoric acid
JPH01272785A (en) * 1988-04-25 1989-10-31 Nippon Hyomen Kagaku Kk Method for chemically polishing titanium or titanium alloy
JP3372435B2 (en) * 1996-11-26 2003-02-04 松下電工株式会社 Method for producing titanium oxide film
JP3200030B2 (en) * 1997-10-08 2001-08-20 新日軽株式会社 Aluminum surface treatment agent and surface treatment method
JP4393021B2 (en) * 2000-07-31 2010-01-06 三菱化学株式会社 Etching solution manufacturing method
JP2003293174A (en) * 2002-04-05 2003-10-15 Nippon Paint Co Ltd Acid etching solution for magnesium metal and/or alloy and surface treatment method
JP2004043850A (en) * 2002-07-09 2004-02-12 Mitsubishi Gas Chem Co Inc Titanium or titanium alloy etching method

Also Published As

Publication number Publication date
JP2005097715A (en) 2005-04-14
KR20060039447A (en) 2006-05-08
WO2005017230A1 (en) 2005-02-24

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