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TW200515841A - Electrostatic chuck, plasma processing apparatus, and plasma processing method - Google Patents

Electrostatic chuck, plasma processing apparatus, and plasma processing method

Info

Publication number
TW200515841A
TW200515841A TW093123809A TW93123809A TW200515841A TW 200515841 A TW200515841 A TW 200515841A TW 093123809 A TW093123809 A TW 093123809A TW 93123809 A TW93123809 A TW 93123809A TW 200515841 A TW200515841 A TW 200515841A
Authority
TW
Taiwan
Prior art keywords
dielectric layer
plasma processing
susceptor
electrostatic chuck
layer
Prior art date
Application number
TW093123809A
Other languages
Chinese (zh)
Other versions
TWI365684B (en
Inventor
Tsutomu Satoyoshi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200515841A publication Critical patent/TW200515841A/en
Application granted granted Critical
Publication of TWI365684B publication Critical patent/TWI365684B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

The present invention provides an electrostatic chuck for stably and surely chucking and supporting an insulator substrate without causing abnormal discharge and dielectric breakdown. In a placing stand 10 on which the insulator substrate G is placed; a rectangular block shaped susceptor 14 made of a conductor such as aluminum, and a rectangular frame shaped focus ring 16 made of an insulator such as quartz for surrounding around the susceptor 14, are provided on a base member 12. An electrostatic chucking part 24 comprises a three-layer structure of a lower dielectric layer 18, an electrode layer 20, and an upper dielectric layer 22 each formed on a principal face (upper face) of the susceptor 14 respectively by the thermal spraying method. The lower dielectric layer 18 and the upper dielectric layer 22 are made of ceramics of at least alumina (Al2O3) or zirconia (ZrO2) whose volume resistivity is 1x1014 OHgr;. cm or over. An output terminal of a DC power supply 34 is electrically connected to the electrode layer 20.
TW093123809A 2003-10-31 2004-08-09 Electrostatic chuck, plasma processing apparatus, and plasma processing method TW200515841A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003373389A JP4421874B2 (en) 2003-10-31 2003-10-31 Plasma processing apparatus and plasma processing method

Publications (2)

Publication Number Publication Date
TW200515841A true TW200515841A (en) 2005-05-01
TWI365684B TWI365684B (en) 2012-06-01

Family

ID=34649483

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123809A TW200515841A (en) 2003-10-31 2004-08-09 Electrostatic chuck, plasma processing apparatus, and plasma processing method

Country Status (4)

Country Link
JP (1) JP4421874B2 (en)
KR (1) KR100802670B1 (en)
CN (1) CN1311538C (en)
TW (1) TW200515841A (en)

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TWI450642B (en) * 2007-10-01 2014-08-21 英諾晶片科技股份有限公司 Circuit protection device
TWI497640B (en) * 2012-03-12 2015-08-21
TWI587443B (en) * 2015-09-17 2017-06-11 Advanced Micro-Fabrication Equipment Inc The stage and the corresponding plasma processing device
TWI672076B (en) * 2014-03-28 2019-09-11 Fisa Corporation Neutralization device and transport apparatus having the same

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KR101146906B1 (en) * 2004-07-06 2012-05-22 주성엔지니어링(주) Electrode static chuck
KR100606571B1 (en) 2004-10-06 2006-07-28 주식회사 에이디피엔지니어링 Plasma processing equipment
JP4542959B2 (en) * 2005-07-14 2010-09-15 東京エレクトロン株式会社 Electrostatic chucking electrode, substrate processing apparatus, and method of manufacturing electrostatic chucking electrode
JP5094002B2 (en) * 2005-09-06 2012-12-12 ルネサスエレクトロニクス株式会社 Plasma processing apparatus and method for suppressing abnormal discharge thereof
KR100683252B1 (en) * 2005-10-27 2007-02-15 주식회사 래디언테크 Feeding device and plasma processing device including the same
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JP4994121B2 (en) * 2006-08-10 2012-08-08 東京エレクトロン株式会社 Electrostatic chucking electrode, substrate processing apparatus, and method of manufacturing electrostatic chucking electrode
JP4753888B2 (en) * 2007-01-15 2011-08-24 東京エレクトロン株式会社 Substrate holding mechanism and plasma processing apparatus
JP5160112B2 (en) * 2007-03-19 2013-03-13 東京エレクトロン株式会社 Internal structure of processing apparatus, internal structure of plasma processing apparatus, and plasma processing apparatus
US20080237184A1 (en) * 2007-03-30 2008-10-02 Mamoru Yakushiji Method and apparatus for plasma processing
JP5660753B2 (en) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ High temperature cathode for plasma etching
KR101125885B1 (en) * 2007-07-31 2012-03-22 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
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JP4913113B2 (en) * 2008-11-27 2012-04-11 エイ・ディ・ピー・エンジニアリング・コーポレーション・リミテッド Lower electrode assembly of flat panel display device manufacturing apparatus
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JP5689283B2 (en) * 2010-11-02 2015-03-25 東京エレクトロン株式会社 Substrate processing method and storage medium storing program for executing the method
WO2012063353A1 (en) * 2010-11-11 2012-05-18 トヨタ自動車株式会社 Electrically heated catalyst
KR101228056B1 (en) * 2011-01-03 2013-01-30 주식회사 대하이노텍 Ceramic Coated Metal Susceptor and Method for Manufacturing thereof
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
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JP6140624B2 (en) * 2014-02-27 2017-05-31 東京エレクトロン株式会社 Substrate holding method, substrate holding apparatus and bonding apparatus
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US10510625B2 (en) * 2015-11-17 2019-12-17 Lam Research Corporation Systems and methods for controlling plasma instability in semiconductor fabrication
US10622243B2 (en) * 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
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US10822255B2 (en) 2017-07-14 2020-11-03 Doosan Heavy Industries & Construction Co., Ld Water treatment apparatus using underwater plasma discharge and water treatment system including same
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TWI791558B (en) * 2017-07-27 2023-02-11 美商應用材料股份有限公司 Method, non-transitory machine readable storage medium, and system for temperature control of processing chambers for semiconductor substrates
JP7138497B2 (en) * 2017-08-23 2022-09-16 東京エレクトロン株式会社 Measuring device, measuring method and plasma processing device
JP6846384B2 (en) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 Method of controlling high frequency power supply of plasma processing equipment and plasma processing equipment
JP7204350B2 (en) * 2018-06-12 2023-01-16 東京エレクトロン株式会社 Mounting table, substrate processing device and edge ring
JP7020311B2 (en) * 2018-06-14 2022-02-16 東京エレクトロン株式会社 Board processing equipment and board processing method
JP7140329B2 (en) * 2018-08-10 2022-09-21 地方独立行政法人山口県産業技術センター Anodized titanium material and its manufacturing method
WO2020045432A1 (en) * 2018-08-29 2020-03-05 京セラ株式会社 Electrostatic chuck and method for manufacturing electrostatic chuck
JP7199200B2 (en) * 2018-11-01 2023-01-05 東京エレクトロン株式会社 SUBSTRATE PLACE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
US11031273B2 (en) * 2018-12-07 2021-06-08 Applied Materials, Inc. Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes
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Publication number Priority date Publication date Assignee Title
TWI450642B (en) * 2007-10-01 2014-08-21 英諾晶片科技股份有限公司 Circuit protection device
TWI497640B (en) * 2012-03-12 2015-08-21
TWI672076B (en) * 2014-03-28 2019-09-11 Fisa Corporation Neutralization device and transport apparatus having the same
TWI587443B (en) * 2015-09-17 2017-06-11 Advanced Micro-Fabrication Equipment Inc The stage and the corresponding plasma processing device

Also Published As

Publication number Publication date
KR20050041926A (en) 2005-05-04
CN1311538C (en) 2007-04-18
TWI365684B (en) 2012-06-01
JP2005136350A (en) 2005-05-26
CN1612314A (en) 2005-05-04
JP4421874B2 (en) 2010-02-24
KR100802670B1 (en) 2008-02-12

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