TW200503956A - Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film - Google Patents
Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide filmInfo
- Publication number
- TW200503956A TW200503956A TW093109775A TW93109775A TW200503956A TW 200503956 A TW200503956 A TW 200503956A TW 093109775 A TW093109775 A TW 093109775A TW 93109775 A TW93109775 A TW 93109775A TW 200503956 A TW200503956 A TW 200503956A
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- forming
- tantalum oxide
- oxide film
- coating film
- Prior art date
Links
Classifications
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04C—STRUCTURAL ELEMENTS; BUILDING MATERIALS
- E04C2/00—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels
- E04C2/02—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials
- E04C2/26—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups
- E04C2/284—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups at least one of the materials being insulating
- E04C2/296—Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups at least one of the materials being insulating composed of insulating material and non-metallic or unspecified sheet-material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
- E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
- E04B1/38—Connections for building structures in general
- E04B1/61—Connections for building structures in general of slab-shaped building elements with each other
- E04B1/6108—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together
- E04B1/612—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces
- E04B1/6125—Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces with protrusions on the one frontal surface co-operating with recesses in the other frontal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Architecture (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Electromagnetism (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003105182 | 2003-04-09 | ||
| JP2003182221A JP2004359532A (ja) | 2003-04-09 | 2003-06-26 | タンタル酸化物膜形成用組成物、タンタル酸化物膜およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200503956A true TW200503956A (en) | 2005-02-01 |
Family
ID=33554352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093109775A TW200503956A (en) | 2003-04-09 | 2004-04-08 | Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20050003085A1 (zh) |
| JP (1) | JP2004359532A (zh) |
| KR (1) | KR20040087935A (zh) |
| TW (1) | TW200503956A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104471720A (zh) * | 2012-07-19 | 2015-03-25 | 日立化成株式会社 | 钝化层形成用组合物、带钝化层的半导体基板、带钝化层的半导体基板的制造方法、太阳能电池元件、太阳能电池元件的制造方法及太阳能电池 |
| CN104488070A (zh) * | 2012-07-19 | 2015-04-01 | 日立化成株式会社 | 带钝化层的半导体基板及其制造方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011003620A (ja) * | 2009-06-16 | 2011-01-06 | Toyota Central R&D Labs Inc | 電磁気素子用絶縁膜及び電界効果素子 |
| KR101315268B1 (ko) | 2009-09-28 | 2013-10-08 | 다이이치 고교 세이야쿠 가부시키가이샤 | 금속염 함유 조성물, 기판 및 기판의 제조 방법 |
| US8821967B2 (en) * | 2010-10-04 | 2014-09-02 | National Cheng Kung University | Method for manufacturing an oxide thin film |
| US20150228812A1 (en) * | 2012-07-19 | 2015-08-13 | Hitachi Chemical Company, Ltd. | Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photololtaic cell element, method of producing photovoltaic cell element, and photovoltaic cell |
| JPWO2014014109A1 (ja) * | 2012-07-19 | 2016-07-07 | 日立化成株式会社 | パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池 |
| TWI618712B (zh) * | 2012-12-28 | 2018-03-21 | Tosoh Corporation | 第五族金屬側氧基-烷側氧基錯合物及其製造方法、製膜用材料及第五族金屬氧化物膜的製作方法 |
| JP6240496B2 (ja) * | 2013-12-25 | 2017-11-29 | 東ソー株式会社 | タンタルオキソ−アルコキソ錯体、その製造方法及びタンタル酸化物膜の作製方法 |
| JP2016028408A (ja) * | 2014-03-24 | 2016-02-25 | パナソニックIpマネジメント株式会社 | 蓄電素子及び蓄電素子の製造方法 |
| KR102233994B1 (ko) * | 2018-09-13 | 2021-03-31 | 한국과학기술원 | 유무기 절연막 및 그의 제조방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3217699B2 (ja) * | 1996-04-19 | 2001-10-09 | 東京応化工業株式会社 | Bi系誘電体薄膜形成用塗布液及びこれを用いて形成した誘電体薄膜 |
| AU2002224015A1 (en) * | 2000-11-21 | 2002-06-03 | Jsr Corporation | Tantalum oxide film, use thereof, and method and composition for forming the same |
-
2003
- 2003-06-26 JP JP2003182221A patent/JP2004359532A/ja not_active Withdrawn
-
2004
- 2004-04-08 US US10/820,056 patent/US20050003085A1/en not_active Abandoned
- 2004-04-08 TW TW093109775A patent/TW200503956A/zh unknown
- 2004-04-08 KR KR1020040023946A patent/KR20040087935A/ko not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104471720A (zh) * | 2012-07-19 | 2015-03-25 | 日立化成株式会社 | 钝化层形成用组合物、带钝化层的半导体基板、带钝化层的半导体基板的制造方法、太阳能电池元件、太阳能电池元件的制造方法及太阳能电池 |
| CN104488070A (zh) * | 2012-07-19 | 2015-04-01 | 日立化成株式会社 | 带钝化层的半导体基板及其制造方法 |
| US9714262B2 (en) | 2012-07-19 | 2017-07-25 | Hitachi Chemical Company, Ltd. | Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040087935A (ko) | 2004-10-15 |
| JP2004359532A (ja) | 2004-12-24 |
| US20050003085A1 (en) | 2005-01-06 |
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