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TW200503956A - Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film - Google Patents

Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film

Info

Publication number
TW200503956A
TW200503956A TW093109775A TW93109775A TW200503956A TW 200503956 A TW200503956 A TW 200503956A TW 093109775 A TW093109775 A TW 093109775A TW 93109775 A TW93109775 A TW 93109775A TW 200503956 A TW200503956 A TW 200503956A
Authority
TW
Taiwan
Prior art keywords
composition
forming
tantalum oxide
oxide film
coating film
Prior art date
Application number
TW093109775A
Other languages
English (en)
Inventor
Isamu Yonekura
Sachiko Hashimoto
Hitoshi Kato
Tatsuya Sakai
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200503956A publication Critical patent/TW200503956A/zh

Links

Classifications

    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04CSTRUCTURAL ELEMENTS; BUILDING MATERIALS
    • E04C2/00Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels
    • E04C2/02Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials
    • E04C2/26Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups
    • E04C2/284Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups at least one of the materials being insulating
    • E04C2/296Building elements of relatively thin form for the construction of parts of buildings, e.g. sheet materials, slabs, or panels characterised by specified materials composed of materials covered by two or more of groups E04C2/04, E04C2/08, E04C2/10 or of materials covered by one of these groups with a material not specified in one of the groups at least one of the materials being insulating composed of insulating material and non-metallic or unspecified sheet-material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143Radiation by light, e.g. photolysis or pyrolysis
    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04BGENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B1/00Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
    • E04B1/38Connections for building structures in general
    • E04B1/61Connections for building structures in general of slab-shaped building elements with each other
    • E04B1/6108Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together
    • E04B1/612Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces
    • E04B1/6125Connections for building structures in general of slab-shaped building elements with each other the frontal surfaces of the slabs connected together by means between frontal surfaces with protrusions on the one frontal surface co-operating with recesses in the other frontal surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW093109775A 2003-04-09 2004-04-08 Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film TW200503956A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003105182 2003-04-09
JP2003182221A JP2004359532A (ja) 2003-04-09 2003-06-26 タンタル酸化物膜形成用組成物、タンタル酸化物膜およびその製造方法

Publications (1)

Publication Number Publication Date
TW200503956A true TW200503956A (en) 2005-02-01

Family

ID=33554352

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093109775A TW200503956A (en) 2003-04-09 2004-04-08 Composition for forming a coating film, method of preparing the composition, tantalum oxide film and method of forming the tantalum oxide film

Country Status (4)

Country Link
US (1) US20050003085A1 (zh)
JP (1) JP2004359532A (zh)
KR (1) KR20040087935A (zh)
TW (1) TW200503956A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471720A (zh) * 2012-07-19 2015-03-25 日立化成株式会社 钝化层形成用组合物、带钝化层的半导体基板、带钝化层的半导体基板的制造方法、太阳能电池元件、太阳能电池元件的制造方法及太阳能电池
CN104488070A (zh) * 2012-07-19 2015-04-01 日立化成株式会社 带钝化层的半导体基板及其制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003620A (ja) * 2009-06-16 2011-01-06 Toyota Central R&D Labs Inc 電磁気素子用絶縁膜及び電界効果素子
KR101315268B1 (ko) 2009-09-28 2013-10-08 다이이치 고교 세이야쿠 가부시키가이샤 금속염 함유 조성물, 기판 및 기판의 제조 방법
US8821967B2 (en) * 2010-10-04 2014-09-02 National Cheng Kung University Method for manufacturing an oxide thin film
US20150228812A1 (en) * 2012-07-19 2015-08-13 Hitachi Chemical Company, Ltd. Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photololtaic cell element, method of producing photovoltaic cell element, and photovoltaic cell
JPWO2014014109A1 (ja) * 2012-07-19 2016-07-07 日立化成株式会社 パッシベーション層形成用組成物、パッシベーション層付半導体基板、パッシベーション層付半導体基板の製造方法、太陽電池素子、太陽電池素子の製造方法、及び太陽電池
TWI618712B (zh) * 2012-12-28 2018-03-21 Tosoh Corporation 第五族金屬側氧基-烷側氧基錯合物及其製造方法、製膜用材料及第五族金屬氧化物膜的製作方法
JP6240496B2 (ja) * 2013-12-25 2017-11-29 東ソー株式会社 タンタルオキソ−アルコキソ錯体、その製造方法及びタンタル酸化物膜の作製方法
JP2016028408A (ja) * 2014-03-24 2016-02-25 パナソニックIpマネジメント株式会社 蓄電素子及び蓄電素子の製造方法
KR102233994B1 (ko) * 2018-09-13 2021-03-31 한국과학기술원 유무기 절연막 및 그의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3217699B2 (ja) * 1996-04-19 2001-10-09 東京応化工業株式会社 Bi系誘電体薄膜形成用塗布液及びこれを用いて形成した誘電体薄膜
AU2002224015A1 (en) * 2000-11-21 2002-06-03 Jsr Corporation Tantalum oxide film, use thereof, and method and composition for forming the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104471720A (zh) * 2012-07-19 2015-03-25 日立化成株式会社 钝化层形成用组合物、带钝化层的半导体基板、带钝化层的半导体基板的制造方法、太阳能电池元件、太阳能电池元件的制造方法及太阳能电池
CN104488070A (zh) * 2012-07-19 2015-04-01 日立化成株式会社 带钝化层的半导体基板及其制造方法
US9714262B2 (en) 2012-07-19 2017-07-25 Hitachi Chemical Company, Ltd. Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

Also Published As

Publication number Publication date
KR20040087935A (ko) 2004-10-15
JP2004359532A (ja) 2004-12-24
US20050003085A1 (en) 2005-01-06

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