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Priority to TW92119065ApriorityCriticalpatent/TWI221315B/en
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Publication of TW200503086ApublicationCriticalpatent/TW200503086A/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
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Abstract
A method for electroplating of copper in a copper process comprises: using a cleaning solution formed of diluting H2O2 of a low concentration with deionized water to clean a substrate with a copper seed layer formed thereon in order to form a copper oxide on the surface of the copper seed layer; mounting the substrate in an electrolyte solution containing copper sulfate (CuSO4) and sulfuric acid (H2SO4) to remove the copper oxide on the copper seed layer; and performing a copper electroplating process to seamlessly grow copper on the exposed new copper seed layer in order to obtain a copper wire and/or copper plug substantially free of defect.
TW92119065A2003-07-112003-07-11New method to improve the performance of electroplating
TWI221315B
(en)