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TW200507254A - Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies - Google Patents

Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies

Info

Publication number
TW200507254A
TW200507254A TW093109792A TW93109792A TW200507254A TW 200507254 A TW200507254 A TW 200507254A TW 093109792 A TW093109792 A TW 093109792A TW 93109792 A TW93109792 A TW 93109792A TW 200507254 A TW200507254 A TW 200507254A
Authority
TW
Taiwan
Prior art keywords
esd
silicon
protection
electrostatic discharge
scr
Prior art date
Application number
TW093109792A
Other languages
Chinese (zh)
Inventor
Cornelius Christian Russ
Phillip Czeslaw Jozwiak
Markus Paul Josef Mergens
John Armer
Cong-Son Trinh
Russell Mohn
Koen Gerard Maria Verhaege
Original Assignee
Sarnoff Corp
Sarnoff Europ Bvba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarnoff Corp, Sarnoff Europ Bvba filed Critical Sarnoff Corp
Publication of TW200507254A publication Critical patent/TW200507254A/en

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device that can protect very sensitive thin gate oxides by limiting the power dissipation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment, the invention provides very low triggering and holding voltages. Furthermore, the SOI protection device of the present invention has low impedance and low power dissipation characteristics that reduce voltage buildup, and accordingly, enable designers to fabricate more area efficient protection device.
TW093109792A 2003-04-16 2004-04-08 Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies TW200507254A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46346103P 2003-04-16 2003-04-16

Publications (1)

Publication Number Publication Date
TW200507254A true TW200507254A (en) 2005-02-16

Family

ID=36760975

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093109792A TW200507254A (en) 2003-04-16 2004-04-08 Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies

Country Status (2)

Country Link
CN (1) CN100423256C (en)
TW (1) TW200507254A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048101B2 (en) 2010-12-28 2015-06-02 Industrial Technology Research Institute ESD protection circuit
US9165891B2 (en) 2010-12-28 2015-10-20 Industrial Technology Research Institute ESD protection circuit
TWI714297B (en) * 2019-10-05 2020-12-21 旺宏電子股份有限公司 Electrostatic discharge protection device
TWI891133B (en) * 2022-12-02 2025-07-21 大陸商力特半導體（無錫）有限公司 Silicon controlled rectifier

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859795B (en) * 2009-04-13 2011-11-16 世界先进积体电路股份有限公司 Semiconductor device
US8642452B2 (en) * 2011-01-24 2014-02-04 International Business Machines Corporation Semiconductor-on-insulator device with asymmetric structure
CN102244105B (en) * 2011-06-20 2013-07-03 北京大学 Thyristor with high hold voltage and low triggering voltage ESD (electronstatic discharge) characteristic
CN102569266A (en) * 2012-02-20 2012-07-11 中国科学院微电子研究所 Polysilicon controlled silicon and manufacturing method thereof
CN107482004A (en) * 2017-07-06 2017-12-15 北京时代民芯科技有限公司 A Multi-supply Voltage Integrated Circuit ESD Protection Network in Epitaxial Technology
CN112670279B (en) * 2019-10-15 2024-08-23 旺宏电子股份有限公司 Electrostatic discharge protection device
CN114301044B (en) * 2021-12-21 2022-10-04 电子科技大学 An ESD Protection Circuit Based on Group III Nitride

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6015992A (en) * 1997-01-03 2000-01-18 Texas Instruments Incorporated Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits
US5872379A (en) * 1997-07-10 1999-02-16 Taiwan Semiconductor Manufacturing Co. Ltd. Low voltage turn-on SCR for ESD protection
TW423156B (en) * 1999-09-06 2001-02-21 Winbond Electronics Corp Electrostatic discharge protection circuit for SOI technique
JP4573963B2 (en) * 2000-08-08 2010-11-04 ルネサスエレクトロニクス株式会社 Semiconductor device
US6521952B1 (en) * 2001-10-22 2003-02-18 United Microelectronics Corp. Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048101B2 (en) 2010-12-28 2015-06-02 Industrial Technology Research Institute ESD protection circuit
US9165891B2 (en) 2010-12-28 2015-10-20 Industrial Technology Research Institute ESD protection circuit
TWI714297B (en) * 2019-10-05 2020-12-21 旺宏電子股份有限公司 Electrostatic discharge protection device
TWI891133B (en) * 2022-12-02 2025-07-21 大陸商力特半導體（無錫）有限公司 Silicon controlled rectifier

Also Published As

Publication number Publication date
CN100423256C (en) 2008-10-01
CN1774805A (en) 2006-05-17

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