SU1282757A1 - METHOD OF MANUFACTURING THIN SILICON PLATES - Google Patents
METHOD OF MANUFACTURING THIN SILICON PLATESInfo
- Publication number
- SU1282757A1 SU1282757A1 SU3719121/25A SU3719121A SU1282757A1 SU 1282757 A1 SU1282757 A1 SU 1282757A1 SU 3719121/25 A SU3719121/25 A SU 3719121/25A SU 3719121 A SU3719121 A SU 3719121A SU 1282757 A1 SU1282757 A1 SU 1282757A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- ingot
- doses
- irradiated
- thin silicon
- manufacturing thin
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 3
- 238000003776 cleavage reaction Methods 0.000 abstract 2
- 230000007017 scission Effects 0.000 abstract 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052805 deuterium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1. Способ изготовления тонких пластин кремния, включающий их отделение от слитка путем формирования поверхности скола, отличающийся тем, что, с целью повышения производительности и воспроизводимости изготовления, поверхность скола формируют облучением слитка потоком легких ионов преимущественно водорода, дейтерия, гелия и нагревом слитка.2. Способ по п.1, отличающийся тем, что слиток облучают дозами по крайней мере 10смпри комнатной температуре.3. Способ по п.1, отличающийся тем, что слиток облучают дозами по крайней мере 10смпри температуре не менее 700 К.4. Способ по п.1, отличающийся тем, что слиток облучают дозами по крайней мере 10смпри температуре послерадиационного отжига не менее 840 К.1. A method of manufacturing silicon wafers, including their separation from the ingot by forming a cleavage surface, characterized in that, in order to improve production and reproducibility of manufacturing, the cleavage surface is formed by irradiating the ingot with a stream of light ions, mainly hydrogen, deuterium, helium and heating the ingot . The method according to claim 1, characterized in that the ingot is irradiated with doses of at least 10 cm at room temperature. The method according to claim 1, characterized in that the ingot is irradiated with doses of at least 10 cm at a temperature of at least 700 K.4. The method according to claim 1, characterized in that the ingot is irradiated with doses of at least 10 cm at a temperature of post-radiation annealing of at least 840 K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU3719121/25A SU1282757A1 (en) | 1983-12-30 | 1983-12-30 | METHOD OF MANUFACTURING THIN SILICON PLATES |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU3719121/25A SU1282757A1 (en) | 1983-12-30 | 1983-12-30 | METHOD OF MANUFACTURING THIN SILICON PLATES |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU1282757A1 true SU1282757A1 (en) | 2000-06-27 |
Family
ID=60519279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU3719121/25A SU1282757A1 (en) | 1983-12-30 | 1983-12-30 | METHOD OF MANUFACTURING THIN SILICON PLATES |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU1282757A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067396B2 (en) | 1996-05-15 | 2006-06-27 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
| RU2297691C2 (en) * | 2005-06-09 | 2007-04-20 | Открытое акционерное общество "ЭЛПА" | Method for radiation-induced gas spalling of fragile crystalline materials (alternatives) |
| EP2019418A2 (en) | 2007-01-29 | 2009-01-28 | Silicon Genesis Corporation | Method and structure using selected implant angles for manufacturing free standing films of materials |
| US7713369B2 (en) | 2001-04-13 | 2010-05-11 | Commissariat A L'energie Atomique | Detachable substrate or detachable structure and method for the production thereof |
| US8124499B2 (en) | 2006-11-06 | 2012-02-28 | Silicon Genesis Corporation | Method and structure for thick layer transfer using a linear accelerator |
| US9257339B2 (en) | 2012-05-04 | 2016-02-09 | Silicon Genesis Corporation | Techniques for forming optoelectronic devices |
-
1983
- 1983-12-30 SU SU3719121/25A patent/SU1282757A1/en active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067396B2 (en) | 1996-05-15 | 2006-06-27 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
| US7498234B2 (en) | 1996-05-15 | 2009-03-03 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
| US7713369B2 (en) | 2001-04-13 | 2010-05-11 | Commissariat A L'energie Atomique | Detachable substrate or detachable structure and method for the production thereof |
| RU2297691C2 (en) * | 2005-06-09 | 2007-04-20 | Открытое акционерное общество "ЭЛПА" | Method for radiation-induced gas spalling of fragile crystalline materials (alternatives) |
| US8124499B2 (en) | 2006-11-06 | 2012-02-28 | Silicon Genesis Corporation | Method and structure for thick layer transfer using a linear accelerator |
| EP2019418A2 (en) | 2007-01-29 | 2009-01-28 | Silicon Genesis Corporation | Method and structure using selected implant angles for manufacturing free standing films of materials |
| US9257339B2 (en) | 2012-05-04 | 2016-02-09 | Silicon Genesis Corporation | Techniques for forming optoelectronic devices |
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