SU1127466A1 - METHOD OF EPITAXIAL DEVELOPMENT OF GALLI-ALUMINUM ARSENIDE LAYERS - Google Patents
METHOD OF EPITAXIAL DEVELOPMENT OF GALLI-ALUMINUM ARSENIDE LAYERSInfo
- Publication number
- SU1127466A1 SU1127466A1 SU3579097/25A SU3579097A SU1127466A1 SU 1127466 A1 SU1127466 A1 SU 1127466A1 SU 3579097/25 A SU3579097/25 A SU 3579097/25A SU 3579097 A SU3579097 A SU 3579097A SU 1127466 A1 SU1127466 A1 SU 1127466A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- aluminum arsenide
- gallium
- galli
- layers
- arsenide layers
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 2
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 239000011555 saturated liquid Substances 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Способ эпитаксиального наращивания слоев арсенида галлия-алюминия на подложках бинарного соединения типа A- Bиз жидкой фазы алюминий-галлий-мышьяк, содержащей 3 - 7 ат.% сурьмы, отличающийся тем, что, с целью улучшения кристаллического совершенства слоев арсенида галлия-алюминия на подложках фосфида галлия, поверхность подложек предварительно приводят в контакт на 5 - 10 мин с насыщенной жидкой фазой индий-сурьма при температуре 723 - 798 К.The method of epitaxial growth of gallium-aluminum arsenide layers on substrates of binary compounds of type A-B out of the aluminum-gallium-arsenic liquid phase containing 3-7 at.% Antimony, characterized in that in order to improve the crystalline perfection of the layers of gallium-aluminum arsenide on substrates gallium phosphide, the surface of the substrate is pre-brought into contact for 5 - 10 min with a saturated liquid phase indium-antimony at a temperature of 723 - 798 K.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU3579097/25A SU1127466A1 (en) | 1983-04-18 | 1983-04-18 | METHOD OF EPITAXIAL DEVELOPMENT OF GALLI-ALUMINUM ARSENIDE LAYERS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU3579097/25A SU1127466A1 (en) | 1983-04-18 | 1983-04-18 | METHOD OF EPITAXIAL DEVELOPMENT OF GALLI-ALUMINUM ARSENIDE LAYERS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU1127466A1 true SU1127466A1 (en) | 2000-06-20 |
Family
ID=60540283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU3579097/25A SU1127466A1 (en) | 1983-04-18 | 1983-04-18 | METHOD OF EPITAXIAL DEVELOPMENT OF GALLI-ALUMINUM ARSENIDE LAYERS |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU1127466A1 (en) |
-
1983
- 1983-04-18 SU SU3579097/25A patent/SU1127466A1/en active
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