SU118812A1 - The method of producing silicon carbide - Google Patents

Description

A known method for producing silicon carbide is the interaction of silicon oxide with carbon when heated in electric resistance furnaces. At the same time, the resistance consisting of carbonaceous material (core) is surrounded with reacting and heat insulating charge materials. As a result of the process, a multi-layered heterogeneous product is formed in the furnace, which is subjected to layer-by-layer disassembly and sorting. Each of the materials obtained in the furnace requires a special treatment, a storage place and a special device for transportation. Returnable materials accumulate harmful impurities, as a result of which they are partially recycled and partly waste.

In order to eliminate the production of returnable materials and the extremely difficult for the staff to perform the layer-by-layer disassembly of the obtained product and its sorting, it is suggested to load the stack of the reaction mixture and grains of silicon carbide, which acts as a thermal insulator with very good gas diffusion, when loading the furnace. The resulting homogeneous product does not require additional sorting, its unloading can be carried out by mechanisms.

The proposed method makes it possible to use the reaction mixture, pressed into circles, which are placed in a furnace between the electrodes. The core is placed in the holes of these circles.

Around the circles of the reaction mixture as a heat insulator put a piece of silicon carbide.

Subject invention

The method of obtaining silicon carbide in electric resistance furnaces from bulk or compressed reaction mixture based on

No. 118812-2 -

silica and carbonaceous material, characterized in that, in order to arrange the return materials and improve the quality of the product, the surface of the reaction mixture charged to the furnace is covered with silicon carbide grit.