SG194085A1 - Low temperature deposition of silicon oxide films - Google Patents
Low temperature deposition of silicon oxide films Download PDFInfo
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- SG194085A1 SG194085A1 SG2013074265A SG2013074265A SG194085A1 SG 194085 A1 SG194085 A1 SG 194085A1 SG 2013074265 A SG2013074265 A SG 2013074265A SG 2013074265 A SG2013074265 A SG 2013074265A SG 194085 A1 SG194085 A1 SG 194085A1
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- Prior art keywords
- wafer
- silicon oxide
- oxide film
- deposition
- silicon
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 25
- 230000008021 deposition Effects 0.000 title claims abstract description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 27
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 125000005624 silicic acid group Chemical group 0.000 claims 2
- 229910019093 NaOCl Inorganic materials 0.000 abstract description 10
- 238000007704 wet chemistry method Methods 0.000 abstract description 7
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- -1 hypochlorite ions Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Inorganic materials Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZDNDTMXQEFXFIJ-UHFFFAOYSA-N [O].Cl[SiH2]Cl Chemical compound [O].Cl[SiH2]Cl ZDNDTMXQEFXFIJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Surface Treatment Of Glass (AREA)
- Paints Or Removers (AREA)
Abstract
Deposition of silicon oxide films at low temperature by using wet chemistry techniques. The wet chemistry solution may be a mixture of sodium hypochloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate, such as silicic acid. The resulting silicon oxide films provide excellent anti-reflective coatings for solar cells and the like.
Description
LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FIL.MS
(001) The present invention relates to methods of depositing silicon oxide films at low temperature using wet chemistry techniques.
(002) Silicon oxide films are deposited onto silicon surfaces for use in many applications, including as masking layers for semiconductor manufacturing and as anti- reflective coatings for solar cells. There are a number of chemical vapor deposition (CVD) techniques that have been used, particularly in the semiconductor industry, to produce thin oxide films. In general, CVD processes form the oxide film by exposing the substrate to one or more volatile precursors that react with or decompose onto the substrate surface to produce the desired oxide film. The CVD processes in use differ in how the chemical reactions are initiated (e.g. activation process) and by the process conditions employed. For example, atmospheric pressure CVD (APCVD), ultrahigh vacuum CVD (UHCVD), plasma enhanced CVD (PECVD) and atomic layer CVD (ALCVD) are some of the CVD techniques used to deposit oxide films. (003) Silicon dioxide (Si0,) may be deposited using a CVD technique, by using any one of several source gas precursor combinations. One such combination uses silane and oxygen according to the following reaction formula.
SiH, (gas) + Op => SiO; (solid) + 2H,
A second combination uses oxygen dichlorosilane (SiCloH;) and nitrous oxide (N>O) according to the following reaction formula.
SiCl,H; + 2N,O => SiO; + 2N, + 2HCI
Another possible precursor source gas 1s tetraethylorthosilicate (TEOS: Si(OC,Hs)s) according to the following reaction formula.
Si(OC;H;s)4) = SiO, + byproducts (004) The choice of source gas depends on the thermal stability of the substrate. In particular, silane deposits between 300°C and 500°C, dichlorosilane deposits at about 900°C and TEOS deposits between 650°C and 750°C. Deposition times generally last for about fifteen minutes, with the full heating and cooling cycle lasting about forty five minutes. (005) The known oxide deposition processes have several disadvantages. These processes require high temperatures and vacuum processing before introduction of the precursor gases, particularly those that are hazardous. Further, the deposition equipment is expensive, has a relatively low wafer throughput, requires frequent cleaning and maintenance and demands highly trained operators. As a result, deposition of silicon oxide films demands substantial capital and operating expense, which increases overall device cost, for example the cost for creating anti-reflective coatings in the photovoltaic industry. Also, backside contact printing, with aluminum or aluminum/gold, is normally performed after the deposition of the oxide, and therefore requires higher temperatures for diffusion of the contacts and reduction in proper contact which could interfere with the overall efficiency of the device. (006) There remains a need in the art for improvements to methods of depositing oxide films, such as silicon oxide films.
(007) The present invention provides low temperature methods of depositing silicon oxide films using wet chemistry.
(008) Figure 1 is a graph showing the reflectance of p-type textured silicon wafers following processing according to the present invention. (009) Figure 2 is a graph showing the reflectance textured silicon wafers doped with phosphor following processing according to the present invention. (010) Figure 3 is a graph showing the reflectance of textured multi-crystalline silicon wafers following processing according to the present invention
(011) The present provides methods of depositing silicon oxide films at low temperature using wet chemistry techniques. In accordance with the present invention, a wet chemistry mixture of sodium hypo chloride (NaOCl), tetra methyl ammonium hydroxide (TMAH) and hydrated silicate (such as silicic acid) is used for the low temperature oxide deposition. (012) NaOCl is a strong oxidizing agent that ionizes in water to give hypochlorous acid (HOCI) and hypochlorite ions (OCI). If applied to a silicon substrate, the silicon etching rate is low because of the relative lack of availability of OH ions. However, the silicon does react with the hypochlorite ions to form Si10,. The process of forming a SiO; film using a NaOCl solution alone is a slow process and the film produced is of poor quality.
Further this film does not adhere strongly to the silicon substrate. A summary of the reaction sequence is set forth below.
NaOCl <-> Na’ + OCI (1) 20CI' + HO <-> HOCI + OCI’ + OH 2)
Si + 20CH €—> SiO, + 2CI (3)
Diluted TMAH (and other hydroxide solutions such as KOH and NaOH) exhibit strong silicon etch rates. As an initial step, the TMAH is reduced to form hydroxyl ions. This is followed by reaction of the hydroxyl ions with silicon atoms at the substrate surface to form oxidized silicates, such as Si (OH),”" and four electrons are injected from each silicon atom into the conduction band. Therefore, the overall reaction must balance the ions and the electrons. Simultaneously, water is reduced to provide more hydroxyl tons which in turn are bonded to the silicates formed in the second step. This reaction produces soluble silicic acid, with hydrogen gas as a by-product. Using the TMAH solution alone, unlike NaOCl, would result in etching of the silicon substrate rather than deposition of an oxide film. This reaction sequence is set forth below. (CH3)4NOH €~> (CH3lN" + OH 4)
Si + 20H €-> Si(OH)™ + 4e (5)
Si(OH),> + de + 4H,0 <-> Si(OH)s* + 2H, (6) (013) By combination of the above solutions, the deposition of an oxide can be accomplished at low temperatures. In particular, By combining dilute TMAH (or another hydroxide solution) having the capability to etch the silicon substrate, with NaOCl] that is capable of forming a oxide, and silicate that provides an additional source of silicon for oxidation and deposition, in appropriate amounts, according to the present invention and applying such mixture to a silicon substrate, simultaneous etching of the silicon substrate and deposition of oxide can be accomplished at temperatures between 60°C and 90°C.
The oxide coatings produced according to the present invention have the proper texture and properties to serve as anti-reflective coatings for solar cells. The thickness of the oxide coating can be adjusted by changing temperature or chemical exposure times to obtain optimal coatings that have low reflectance of visible light. This results in the ability of devices with these coatings to capture the appropriate solar spectrum with increased efficiency of the solar cell. (014) The present invention will be described in greater detail with reference to the following examples. Initially, a single crystal Si (100) wafer may be textured using either
KOH+IPA, TMAH+IPA or acid solutions such as nitric acid mixed with hydrofluoric acid. The native oxide of the wafer is first removed in a 4% HF solution for several minutes. The wafer is then exposed in accordance with the present invention to a solution of NaOCl, TMAH and extra dissolved Si or added silicic acid. This exposure results in a coating of hydride silica (Polymerized) which when dry heated forms silica having an index of refraction close to SiO;; i.e. about 1.45. (015) Figure 1 shows the reflectance properties of p-type silicon wafers as a function of exposure at 75°C to the solution mixture according to the present invention described above. As can be seen, reflectance is significantly reduced with as little a five minutes exposure, while even better results are achieved with thirteen minutes of exposure. In simulations, the average oxide build-up is 63 nm for five minutes exposure, 93 nm for eight minutes exposure and 120 nm for thirteen minutes exposure. (016) Wafers that were phosphor-diffused using POCI; were treated according to the present invention using the solution mixture noted above, i.e. a solution of NaOCl,
TMAH and extra dissolved Si or added silicic acid. The results are shown in figure 2. In particular, while the high doping concentration slowed the deposition rate, the significant reduction in reflectance was still achieved. The rate of deposition on highly phosphor doped substrates was reduced by a factor of up to two compared to deposition rates on low boron doped (p-type) substrates. (017) In a similar manner multi-crystalline (c-Si) silicon surfaces were treated according to the present invention with a solution of NaOCl, TMAH and extra dissolved
Si or added silicic acid. Figure 3 compares the reflectance properties of the me-Si surface prior to treatment and after exposure for ten minutes at 80°C. The reflectance properties shown in Figure 3 are averaged over a few grains orientation. However, it appears the value does not change appreciably with the location on the wafer. These results suggest that the deposition rate of oxide coating is weakly dependent on the crystalographic orientation of Si wafer exposed. Therefore, it is believed that the coating method of the present invention can be applied to mc-Si as well a single crystal silicon substrates. (018) The present invention of depositing silicon oxide coatings by exposure to wet chemical solutions, has several advantages of the CVD deposition techniques used in the prior art. In particular, the present invention can be carried out at low temperatures and provides faster deposition rates. In addition, the pressent invenition is a simpler process and requires less expensive equipment and fewer utility costs. Moreover, the present invention does not requires any hazardeous gaseous precursur chemicals. The results of the using the present invention are lower reflectance in the high energy wavelength band of natural light and overall reduced light reflectance when integrated across the light spectrum of 400nm to 1000 nm. The present invention is particularly advantageous in solar cell application, where the deposition of oxide anti reflective coating by wet chemistry can be carried out before as well as after contact print film deposition. The solutions used in the present inventino do not significantly etch either the aluminum or gold used for contacts. This results in better contact between the Al or AI/Ag contacts and the dopped silicon and therefore improves the electrical properties of the solar cell.
(019) Tt will be understood that the embodiments described herein are merely exemplary and that one skilled in the art may make variations and modifications without departing from the spirit and scope of the present invention.
All such variations and modifications are intended to be included within the scope of the invention as described above.
Further, all embodiments disclosed are not necessarily in the alternative, as various embodiments of the invention may be combined to provide the desired result.
Claims (17)
1. A method of depositing a silicon oxide film comprising: exposing a silicon wafer to a wet chemical solution of sodium hypochloride, tetramethylammonium hydroxide and a hydrated silicate to form a layer of hydride silica on the surface of the wafer; and dry heating to form a silicon oxide film.
2. The method of claim] wherein the hydrated silicate is silicic acid.
3. The method of claim 1 wherein the deposition is accomplished at temperatures between 60°C and 90°C.
4. The method of claim 1 wherein in the wafer is a solar cell wafer and the silicon oxide film is an anti-reflective coating.
5. The method of claim 1 further comprising adjusting the thickness of the silicon oxide film by changing temperature or exposure time.
6. The method of claim 1 wherein the wafer is a single crystal Si (100) wafer.
7. The method of claim 1 wherein the wafer is a multi-crystalline wafer.
g. The method of claim 1 wherein the wafer is a phosphor doped wafer.
9. The method of claim 1 further comprising exposing the wafer to the wet chemical solution contact print film deposition is performed on the wafer.
10. A silicon oxide film deposited by the method comprising exposing a silicon wafer to a wet chemical solution of sodium hypochloride, tetramethylammonium hydroxide and a hydrated silicate to form a layer of hydride silica on the surface of the wafer; and dry heating to form the silicon oxide film.
11. The silicon oxide film of claimlo wherein the hydrated silicate is silicic acid.
12. The silicon oxide film of claim 10 wherein the wafer is a solar cell wafer and the silicon oxide film is an anti-reflective coating.
13. The silicon oxide film of claim 10 having a thickness of 63 nm to 120 nm.
14. The silicon oxide film of claim 10 wherein the wafer is a single crystal Si (100) wafer.
15. The silicon oxide film of claim 10 wherein the wafer is a multi-crystaliine wafer.
16. The silicon oxide film of claim 10 wherein the wafer is a phosphor doped wafer.
17. The silicon oxide film of claim 10 wherein the oxide film is deposited after contact print film deposition is performed on the wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161474415P | 2011-04-12 | 2011-04-12 | |
| PCT/US2012/031122 WO2012141908A1 (en) | 2011-04-12 | 2012-03-29 | Low temperature deposition of silicon oxide films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG194085A1 true SG194085A1 (en) | 2013-11-29 |
Family
ID=47009645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013074265A SG194085A1 (en) | 2011-04-12 | 2012-03-29 | Low temperature deposition of silicon oxide films |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2697826A4 (en) |
| SG (1) | SG194085A1 (en) |
| TW (1) | TW201307610A (en) |
| WO (1) | WO2012141908A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013004611B4 (en) * | 2013-03-14 | 2014-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Coating, process for its preparation and its use |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2721632B2 (en) * | 1992-02-25 | 1998-03-04 | 松下電工株式会社 | Processing method of copper circuit of circuit board |
| US5616233A (en) * | 1996-05-01 | 1997-04-01 | National Science Council | Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature |
| US20020106865A1 (en) * | 2001-02-05 | 2002-08-08 | Tai-Ju Chen | Method of forming shallow trench isolation |
| EP1293488A1 (en) * | 2001-09-12 | 2003-03-19 | Toyo Gosei Kogyo Co., Ltd. | Coating solution and method for forming transparent coating film |
| CN1875325B (en) * | 2003-10-29 | 2011-01-26 | 马林克罗特贝克公司 | Alkaline post plasma etch/ash residue remover and photoresist stripping composition containing metal halide corrosion inhibitor |
| KR100971658B1 (en) * | 2008-01-03 | 2010-07-22 | 엘지전자 주식회사 | Texturing Methods of Silicon Solar Cells |
-
2012
- 2012-03-29 WO PCT/US2012/031122 patent/WO2012141908A1/en not_active Ceased
- 2012-03-29 EP EP12770650.5A patent/EP2697826A4/en not_active Withdrawn
- 2012-03-29 SG SG2013074265A patent/SG194085A1/en unknown
- 2012-04-12 TW TW101113065A patent/TW201307610A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2697826A4 (en) | 2014-10-22 |
| WO2012141908A1 (en) | 2012-10-18 |
| WO2012141908A8 (en) | 2012-11-22 |
| EP2697826A1 (en) | 2014-02-19 |
| TW201307610A (en) | 2013-02-16 |
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