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SG155830A1 - Grinding method for grinding back-surface of semiconductor wafer and grinding apparatus for grinding back-surface of semiconductor wafer used in same - Google Patents

Grinding method for grinding back-surface of semiconductor wafer and grinding apparatus for grinding back-surface of semiconductor wafer used in same

Info

Publication number
SG155830A1
SG155830A1 SG200900722-0A SG2009007220A SG155830A1 SG 155830 A1 SG155830 A1 SG 155830A1 SG 2009007220 A SG2009007220 A SG 2009007220A SG 155830 A1 SG155830 A1 SG 155830A1
Authority
SG
Singapore
Prior art keywords
grinding
semiconductor wafer
thickness
same
back surface
Prior art date
Application number
SG200900722-0A
Inventor
Shigeharu Arisa
Toshiyuki Ozawa
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of SG155830A1 publication Critical patent/SG155830A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

A grinding method for grinding a back surface of a semiconductor wafer that performs in feed grinding of a back surface of a wafer laminated body, the method, during the grinding of the back surface of the wafer laminated body, having: measuring respectively a thickness of an outer peripheral portion and an inner peripheral portion of the wafer laminated body; calculating a thickness difference between the thickness of the outer portion and the thickness the inner portion; and tilting an axis of a grinding wheel by a predetermined angle in an arbitrary direction so as to reduce the calculated thickness difference.
SG200900722-0A 2008-03-31 2009-02-02 Grinding method for grinding back-surface of semiconductor wafer and grinding apparatus for grinding back-surface of semiconductor wafer used in same SG155830A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008092932A JP2009246240A (en) 2008-03-31 2008-03-31 Grinding method for grinding back-surface of semiconductor wafer and grinding apparatus for grinding back-surface of semiconductor wafer used in same

Publications (1)

Publication Number Publication Date
SG155830A1 true SG155830A1 (en) 2009-10-29

Family

ID=41011365

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200900722-0A SG155830A1 (en) 2008-03-31 2009-02-02 Grinding method for grinding back-surface of semiconductor wafer and grinding apparatus for grinding back-surface of semiconductor wafer used in same

Country Status (5)

Country Link
US (1) US20090247050A1 (en)
JP (1) JP2009246240A (en)
DE (1) DE102009011491A1 (en)
SG (1) SG155830A1 (en)
TW (1) TW200949921A (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5149020B2 (en) * 2008-01-23 2013-02-20 株式会社ディスコ Wafer grinding method
JP2011245610A (en) 2010-05-31 2011-12-08 Mitsubishi Electric Corp Method of manufacturing semiconductor device
JP5658586B2 (en) * 2011-02-03 2015-01-28 株式会社ディスコ Grinding equipment
JP2013004726A (en) * 2011-06-16 2013-01-07 Disco Abrasive Syst Ltd Processing method of plate-like object
US9120194B2 (en) * 2011-07-21 2015-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for wafer grinding
JP5788304B2 (en) * 2011-12-06 2015-09-30 株式会社ディスコ Grinding equipment
JP2014172131A (en) * 2013-03-11 2014-09-22 Disco Abrasive Syst Ltd Grinding device
JP6179021B2 (en) * 2013-07-18 2017-08-16 株式会社岡本工作機械製作所 Semiconductor substrate flattening grinding method
JP6377433B2 (en) * 2014-07-04 2018-08-22 株式会社ディスコ Grinding method
JP6399873B2 (en) * 2014-09-17 2018-10-03 株式会社荏原製作所 Film thickness signal processing apparatus, polishing apparatus, film thickness signal processing method, and polishing method
JP6348856B2 (en) * 2015-02-26 2018-06-27 株式会社東京精密 Grinding equipment
TWI651163B (en) * 2015-08-26 2019-02-21 日商迪思科股份有限公司 Grinding method
CN105215840B (en) * 2015-08-31 2018-04-17 上海华虹宏力半导体制造有限公司 A kind of thining method of silicon hole
JP6632356B2 (en) * 2015-12-10 2020-01-22 株式会社東京精密 Grinding equipment
JP6081005B2 (en) * 2016-04-21 2017-02-15 株式会社東京精密 Grinding / polishing apparatus and grinding / polishing method
JP6791579B2 (en) * 2016-09-09 2020-11-25 株式会社ディスコ Wafers and wafer processing methods
CN108214282B (en) * 2016-12-14 2020-12-15 邱瑛杰 Surface Grinder
TWI602645B (en) * 2016-12-26 2017-10-21 台灣積體電路製造股份有限公司 Thickness reducing apparatus and thickness reducing method
CN108237468B (en) * 2016-12-26 2021-08-03 台湾积体电路制造股份有限公司 Thickness reduction device and thickness reduction method
JP6884015B2 (en) * 2017-03-22 2021-06-09 株式会社荏原製作所 Substrate polishing equipment and polishing method
JP6917233B2 (en) * 2017-07-25 2021-08-11 株式会社ディスコ Wafer processing method
JP6974133B2 (en) * 2017-11-22 2021-12-01 株式会社ディスコ How to mold a SiC ingot
CN107984375A (en) * 2017-11-27 2018-05-04 德淮半导体有限公司 Wafer processing apparatus and its processing method
JP7012538B2 (en) * 2018-01-11 2022-01-28 株式会社ディスコ Wafer evaluation method
JP7068849B2 (en) * 2018-02-19 2022-05-17 株式会社東京精密 Grinding device
JP7331198B2 (en) * 2018-02-19 2023-08-22 株式会社東京精密 Grinding equipment
JP7121573B2 (en) * 2018-07-24 2022-08-18 株式会社ディスコ Creep feed grinding method
JP7417400B2 (en) * 2018-12-07 2024-01-18 株式会社ディスコ Processing method for disc-shaped workpieces
CN110480435A (en) * 2019-09-24 2019-11-22 重庆美心翼申机械股份有限公司 Crankshaft thrust face processing equipment and method
JP7391470B2 (en) * 2019-12-20 2023-12-05 株式会社ディスコ Workpiece grinding method
CN111730431B (en) * 2020-05-20 2021-10-15 清华大学 Wafer grinding method and wafer grinding system
JP7575220B2 (en) * 2020-08-31 2024-10-29 株式会社ディスコ Grinding Equipment
JP7612303B2 (en) * 2021-04-26 2025-01-14 株式会社ディスコ Processing method
CN115502881B (en) * 2021-06-23 2024-09-27 均豪精密工业股份有限公司 Grinding device
CN117464565A (en) * 2023-11-14 2024-01-30 北京中电科电子装备有限公司 A device and method for measuring the thickness of crystal ingot grinding
TWI898454B (en) * 2024-02-29 2025-09-21 東台精機股份有限公司 Wafer polishing device and wafer polishing method
CN119589526A (en) * 2025-01-06 2025-03-11 深圳市重投天科半导体有限公司 A wafer grinding method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5816895A (en) * 1997-01-17 1998-10-06 Tokyo Seimitsu Co., Ltd. Surface grinding method and apparatus
JP2000260738A (en) * 1999-03-10 2000-09-22 Hitachi Ltd Semiconductor substrate grinding method, semiconductor device, and semiconductor device manufacturing method
WO2001022484A1 (en) * 1999-09-20 2001-03-29 Shin-Etsu Handotai Co., Ltd. Method of manufacturing semiconductor wafer
US6368881B1 (en) * 2000-02-29 2002-04-09 International Business Machines Corporation Wafer thickness control during backside grind
US7150674B2 (en) * 2002-10-09 2006-12-19 Koyo Machine Industries Co., Ltd. Both-side grinding method and both-side grinding machine for thin disc work
JP4103808B2 (en) 2004-01-22 2008-06-18 信越半導体株式会社 Wafer grinding method and wafer
JP4913517B2 (en) * 2006-09-26 2012-04-11 株式会社ディスコ Wafer grinding method
JP5064102B2 (en) * 2007-04-27 2012-10-31 株式会社ディスコ Substrate grinding method and grinding apparatus

Also Published As

Publication number Publication date
US20090247050A1 (en) 2009-10-01
JP2009246240A (en) 2009-10-22
TW200949921A (en) 2009-12-01
DE102009011491A1 (en) 2009-10-01

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