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Priority claimed from US11/875,205external-prioritypatent/US7846849B2/en
Application filed by Applied Materials IncfiledCriticalApplied Materials Inc
Publication of SG148138A1publicationCriticalpatent/SG148138A1/en
Frequency Doubling Using Spacer Mask A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.
SG200804174-1A2007-06-012008-06-02Frequency doubling using spacer mask
SG148138A1
(en)