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SG120169A1 - Structure and method of forming integrated circuits utilizing strained channel transistors - Google Patents

Structure and method of forming integrated circuits utilizing strained channel transistors

Info

Publication number
SG120169A1
SG120169A1 SG200403815A SG200403815A SG120169A1 SG 120169 A1 SG120169 A1 SG 120169A1 SG 200403815 A SG200403815 A SG 200403815A SG 200403815 A SG200403815 A SG 200403815A SG 120169 A1 SG120169 A1 SG 120169A1
Authority
SG
Singapore
Prior art keywords
integrated circuits
channel transistors
forming integrated
strained channel
circuits utilizing
Prior art date
Application number
SG200403815A
Inventor
Lin Chun-Chieh
Lee Wen-Chin
Yeo Yee-Chia
Hu Chenming
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/729,092 external-priority patent/US20050035369A1/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG120169A1 publication Critical patent/SG120169A1/en

Links

SG200403815A 2003-08-15 2004-06-17 Structure and method of forming integrated circuits utilizing strained channel transistors SG120169A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49558403P 2003-08-15 2003-08-15
US10/729,092 US20050035369A1 (en) 2003-08-15 2003-12-05 Structure and method of forming integrated circuits utilizing strained channel transistors

Publications (1)

Publication Number Publication Date
SG120169A1 true SG120169A1 (en) 2006-03-28

Family

ID=34798725

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403815A SG120169A1 (en) 2003-08-15 2004-06-17 Structure and method of forming integrated circuits utilizing strained channel transistors

Country Status (3)

Country Link
CN (1) CN100334730C (en)
SG (1) SG120169A1 (en)
TW (1) TWI241627B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781277B2 (en) 2006-05-12 2010-08-24 Freescale Semiconductor, Inc. Selective uniaxial stress relaxation by layout optimization in strained silicon on insulator integrated circuit
US8154051B2 (en) * 2006-08-29 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. MOS transistor with in-channel and laterally positioned stressors
US8527933B2 (en) 2011-09-20 2013-09-03 Freescale Semiconductor, Inc. Layout technique for stress management cells
CN109977531A (en) * 2019-03-20 2019-07-05 天津工业大学 A kind of domain structure of the standard block for digital integrated electronic circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155571A (en) * 1990-08-06 1992-10-13 The Regents Of The University Of California Complementary field effect transistors having strained superlattice structure
EP1399970A2 (en) * 2000-12-04 2004-03-24 Amberwave Systems Corporation Cmos inverter circuits utilizing strained silicon surface channel mosfets
CN2751143Y (en) * 2004-09-27 2006-01-11 高永祥 Automobile exhaust gas measurement and control device

Also Published As

Publication number Publication date
TW200507037A (en) 2005-02-16
TWI241627B (en) 2005-10-11
CN1627519A (en) 2005-06-15
CN100334730C (en) 2007-08-29

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