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SG11201908654UA - Tungsten target - Google Patents

Tungsten target

Info

Publication number
SG11201908654UA
SG11201908654UA SG11201908654UA SG11201908654UA SG 11201908654U A SG11201908654U A SG 11201908654UA SG 11201908654U A SG11201908654U A SG 11201908654UA SG 11201908654U A SG11201908654U A SG 11201908654UA
Authority
SG
Singapore
Prior art keywords
area ratio
planes
target
sputtering
sputtering surface
Prior art date
Application number
Inventor
Takafumi Dasai
Shinichiro Senda
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=63674584&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201908654U(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201908654UA publication Critical patent/SG11201908654UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction,
SG11201908654U 2017-03-31 2018-01-26 Tungsten target SG11201908654UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017070390A JP7174476B2 (en) 2017-03-31 2017-03-31 tungsten target
PCT/JP2018/002559 WO2018179770A1 (en) 2017-03-31 2018-01-26 Tungsten target

Publications (1)

Publication Number Publication Date
SG11201908654UA true SG11201908654UA (en) 2019-10-30

Family

ID=63674584

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908654U SG11201908654UA (en) 2017-03-31 2018-01-26 Tungsten target

Country Status (8)

Country Link
US (1) US11939647B2 (en)
EP (1) EP3604612B1 (en)
JP (1) JP7174476B2 (en)
KR (1) KR20190120292A (en)
CN (2) CN110234790A (en)
SG (1) SG11201908654UA (en)
TW (1) TWI663275B (en)
WO (1) WO2018179770A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220033960A1 (en) * 2018-09-26 2022-02-03 Jx Nippon Mining & Metals Corporation Sputtering Target and Method for Producing Same
JP7043680B2 (en) * 2019-03-22 2022-03-29 株式会社東芝 Cathode parts for discharge lamps and discharge lamps
CN112126902A (en) * 2020-09-14 2020-12-25 浙江最成半导体科技有限公司 High-purity tungsten target material for semiconductor and preparation method thereof
TW202523883A (en) * 2023-11-14 2025-06-16 日商Ｊｘ金屬股份有限公司 Sputtering target assembly and film

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4885065A (en) 1972-02-16 1973-11-12
JP2646058B2 (en) 1993-01-29 1997-08-25 東京タングステン株式会社 Sputter target material and method for producing the same
US6328927B1 (en) * 1998-12-24 2001-12-11 Praxair Technology, Inc. Method of making high-density, high-purity tungsten sputter targets
JP3721014B2 (en) 1999-09-28 2005-11-30 株式会社日鉱マテリアルズ Method for manufacturing tungsten target for sputtering
US7718117B2 (en) * 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
JP2003055758A (en) 2001-08-10 2003-02-26 Nikko Materials Co Ltd Tungsten sintered body target for sputtering and method for producing the same
JP3998972B2 (en) * 2001-12-27 2007-10-31 新日鉄マテリアルズ株式会社 Method for producing sputtering tungsten target
JP2005171389A (en) * 2005-02-16 2005-06-30 Nikko Materials Co Ltd Method for manufacturing tungsten target for sputtering
US20060201589A1 (en) 2005-03-11 2006-09-14 Honeywell International Inc. Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components
DK2038441T3 (en) * 2006-06-22 2016-02-01 H C Starck Hermsdorf Gmbh METHOD FOR MANUFACTURING REFRACTURED METAL MOLDING
US8784729B2 (en) * 2007-01-16 2014-07-22 H.C. Starck Inc. High density refractory metals and alloys sputtering targets
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP4885065B2 (en) 2007-06-11 2012-02-29 Ｊｘ日鉱日石金属株式会社 Method for manufacturing tungsten sintered compact target for sputtering
WO2009107763A1 (en) * 2008-02-29 2009-09-03 新日鉄マテリアルズ株式会社 Metallic sputtering target material
JP5243541B2 (en) * 2008-06-02 2013-07-24 Ｊｘ日鉱日石金属株式会社 Tungsten sintered sputtering target
CN102277558B (en) * 2011-08-23 2012-12-12 洛阳科威钨钼有限公司 Process for manufacturing tungsten spin-coated sputtering tube target
KR20140129249A (en) * 2012-03-02 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Tungsten sintered compact sputtering target and tungsten film formed using same target
CN103567443B (en) 2012-07-25 2015-10-07 宁波江丰电子材料股份有限公司 The preparation method of tungsten target material
WO2014069328A1 (en) * 2012-11-02 2014-05-08 Jx日鉱日石金属株式会社 Tungsten sintered body sputtering target and tungsten film formed using said target
JP6117425B2 (en) * 2014-03-26 2017-04-19 Ｊｘ金属株式会社 Sputtering target made of tungsten carbide or titanium carbide
JP6573629B2 (en) 2014-04-11 2019-09-11 ハー ツェー シュタルク インコーポレイテッドＨ．Ｃ． Ｓｔａｒｃｋ， Ｉｎｃ． High purity refractory metal powders and their use in sputtering targets that can have disordered texture

Also Published As

Publication number Publication date
KR20190120292A (en) 2019-10-23
EP3604612A4 (en) 2021-01-27
TW201837217A (en) 2018-10-16
EP3604612B1 (en) 2024-02-28
CN110234790A (en) 2019-09-13
EP3604612A1 (en) 2020-02-05
JP7174476B2 (en) 2022-11-17
TWI663275B (en) 2019-06-21
WO2018179770A1 (en) 2018-10-04
CN118222988A (en) 2024-06-21
EP3604612C0 (en) 2024-02-28
US20200016660A1 (en) 2020-01-16
US11939647B2 (en) 2024-03-26
JP2018172716A (en) 2018-11-08

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