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SG11201907741PA - Field-effect transistor, method for producing same, display element, display device, and system - Google Patents

Field-effect transistor, method for producing same, display element, display device, and system

Info

Publication number
SG11201907741PA
SG11201907741PA SG11201907741PA SG11201907741PA SG11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA SG 11201907741P A SG11201907741P A SG 11201907741PA
Authority
SG
Singapore
Prior art keywords
chome
tokyo
nakamagome
company
international
Prior art date
Application number
SG11201907741PA
Inventor
Sadanori Arae
Yuichi Ando
Yuki Nakamura
Yukiko Abe
Shinji Matsumoto
Yuji Sone
Naoyuki Ueda
Ryoichi Saotome
Minehide Kusayanagi
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority claimed from PCT/JP2018/010350 external-priority patent/WO2018169024A1/en
Publication of SG11201907741PA publication Critical patent/SG11201907741PA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIPO I PCT (51) International Patent Classification: HO1L 29/423 (2006.01) HO1L 29/66 (2006.01) HO1L 29/417(2006.01) (21) International Application Number: PCT/JP2018/010350 (22) International Filing Date: 15 March 2018 (15.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 2017-053733 17 March 2017 (17.03.2017) JP 2018-045946 13 March 2018 (13.03.2018) JP (71) Applicant (for all designated States except US): RICOH COMPANY, LTD. [JP/JP]; 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). (72) Inventors; and (71) Applicants (for US only): ARAE, Sadanori [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). ANDO, Yuichi [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). NAKAMURA, Yuki [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). ABE, Yukiko [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). MATSUMOTO, Shinji [JP/JP]; c/ o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). SONE, Yuji [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). UEDA, Naoyuki [JP/JP]; c/o Ri- coh Company, Ltd., 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo, 1438555 (JP). SAOTOME, Ryoichi [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1-chome, Oh- ta-ku, Tokyo, 1438555 (JP). KUSAYANAGI, Minehide [JP/JP]; c/o Ricoh Company, Ltd., 3-6, Nakamagome 1- chome, Ohta-ku, Tokyo, 1438555 (JP). (74) Agent: ITOH, Tadashige et al.; 16th Floor, Marunouchi MY PLAZA (Meiji Yasuda Seimei Building), 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 1000005 (JP). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, = (54) Title: FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, DISPLAY DEVICE, AND SYSTEM [Fig. 1A] 10 15 mu °million °nolo om mo mum° oimIE (10) International Publication Number WO 2018/169024 Al // ► X 13 O cr 00 O C (57) : () To miniaturize a field-effect transistor. (Means of Achieving the ) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode. [Continued on next page] WO 2018/169024 Al MIDEDIMOMMIDIIMMOIDEMIEHOMIDEHEMOVOIS TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201907741PA 2017-03-17 2018-03-15 Field-effect transistor, method for producing same, display element, display device, and system SG11201907741PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017053733 2017-03-17
JP2018045946A JP2018157206A (en) 2017-03-17 2018-03-13 FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, DISPLAY ELEMENT, DISPLAY DEVICE, AND SYSTEM
PCT/JP2018/010350 WO2018169024A1 (en) 2017-03-17 2018-03-15 Field-effect transistor, method for producing same, display element, display device, and system

Publications (1)

Publication Number Publication Date
SG11201907741PA true SG11201907741PA (en) 2019-09-27

Family

ID=63715761

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201907741PA SG11201907741PA (en) 2017-03-17 2018-03-15 Field-effect transistor, method for producing same, display element, display device, and system

Country Status (5)

Country Link
EP (1) EP3596757A1 (en)
JP (1) JP2018157206A (en)
CN (1) CN110392928A (en)
SG (1) SG11201907741PA (en)
TW (1) TWI673874B (en)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0687503B2 (en) * 1987-03-11 1994-11-02 株式会社日立製作所 Thin film semiconductor device
JP2940880B2 (en) * 1990-10-09 1999-08-25 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2000196099A (en) * 1998-12-28 2000-07-14 Matsushita Electronics Industry Corp Thin-film transistor and manufacture thereof
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7473593B2 (en) * 2006-01-11 2009-01-06 International Business Machines Corporation Semiconductor transistors with expanded top portions of gates
KR20080094300A (en) * 2007-04-19 2008-10-23 삼성전자주식회사 Thin film transistors and methods of manufacturing the same and flat panel displays comprising thin film transistors
US7649205B2 (en) * 2008-05-30 2010-01-19 Palo Alto Research Center Incorporated Self-aligned thin-film transistor and method of forming same
JP5633346B2 (en) * 2009-12-25 2014-12-03 株式会社リコー Field effect transistor, semiconductor memory, display element, image display apparatus and system
JP5776192B2 (en) * 2010-02-16 2015-09-09 株式会社リコー Field effect transistor, display element, image display apparatus and system
JP2012216780A (en) * 2011-03-31 2012-11-08 Ricoh Co Ltd P-type oxide, p-type oxide manufacturing composition, p-type oxide manufacturing method, semiconductor element, display element, image display device and system
JP2014123670A (en) * 2012-12-21 2014-07-03 Panasonic Corp Thin film transistor and manufacturing method of the same
CN103199113B (en) * 2013-03-20 2018-12-25 京东方科技集团股份有限公司 Thin film transistor (TFT) and preparation method thereof, array substrate, display device
JP6264090B2 (en) * 2013-07-31 2018-01-24 株式会社リコー FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR
JP2016111360A (en) * 2014-11-28 2016-06-20 株式会社リコー Field effect transistor and field effect transistor manufacturing method
CN105870169A (en) * 2016-04-18 2016-08-17 京东方科技集团股份有限公司 Thin-film transistor and manufacturing method thereof, array substrate and display device

Also Published As

Publication number Publication date
TW201838185A (en) 2018-10-16
CN110392928A (en) 2019-10-29
TWI673874B (en) 2019-10-01
EP3596757A1 (en) 2020-01-22
JP2018157206A (en) 2018-10-04

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