SG11201906510PA - Method and device for bonding chips - Google Patents
Method and device for bonding chipsInfo
- Publication number
- SG11201906510PA SG11201906510PA SG11201906510PA SG11201906510PA SG11201906510PA SG 11201906510P A SG11201906510P A SG 11201906510PA SG 11201906510P A SG11201906510P A SG 11201906510PA SG 11201906510P A SG11201906510P A SG 11201906510PA SG 11201906510P A SG11201906510P A SG 11201906510PA
- Authority
- SG
- Singapore
- Prior art keywords
- chips
- bonding chips
- bonding
- onto
- substrate
- Prior art date
Links
Classifications
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- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers
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- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95136—Aligning the plurality of semiconductor or solid-state bodies involving guiding structures, e.g. shape matching, spacers or supporting members
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- H—ELECTRICITY
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
- H01L2224/95146—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium by surface tension
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Wire Bonding (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Dicing (AREA)
Abstract
Method and Device for Bonding Chips What is proposed is a method for bonding chips (7) onto a substrate (11’) or onto further chips, characterized in that the chips (7) are bonded onto the substrate (11’) or the further chips by means of a direct bond. Figure 1a.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2017/054971 WO2018157937A1 (en) | 2017-03-02 | 2017-03-02 | Method and device for bonding chips |
Publications (1)
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|---|---|
| SG11201906510PA true SG11201906510PA (en) | 2019-08-27 |
Family
ID=58266571
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| EP (1) | EP3590130A1 (en) |
| JP (3) | JP7137571B2 (en) |
| KR (2) | KR20190119031A (en) |
| CN (4) | CN118737999A (en) |
| SG (1) | SG11201906510PA (en) |
| TW (6) | TWI713159B (en) |
| WO (1) | WO2018157937A1 (en) |
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| KR20240010753A (en) | 2024-01-24 |
| KR20230042124A (en) | 2023-03-27 |
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| JP2020509578A (en) | 2020-03-26 |
| US20240170474A1 (en) | 2024-05-23 |
| KR20190119031A (en) | 2019-10-21 |
| EP3590130A1 (en) | 2020-01-08 |
| TWI797492B (en) | 2023-04-01 |
| TW202510118A (en) | 2025-03-01 |
| JP7137571B2 (en) | 2022-09-14 |
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| TW202324548A (en) | 2023-06-16 |
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