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SG11201900082RA - Electronic switching element - Google Patents

Electronic switching element

Info

Publication number
SG11201900082RA
SG11201900082RA SG11201900082RA SG11201900082RA SG11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA SG 11201900082R A SG11201900082R A SG 11201900082RA
Authority
SG
Singapore
Prior art keywords
switching element
electronic switching
bonded
electrode
molecular layer
Prior art date
Application number
SG11201900082RA
Other languages
English (en)
Inventor
Peer Kirsch
Andreas Ruhl
Marc Tornow
Achyut Bora
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11201900082RA publication Critical patent/SG11201900082RA/en

Links

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
    • C09K19/60—Pleochroic dyes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/257—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings
    • C07C43/29—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00—Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/125—Saturated compounds having only one carboxyl group and containing ether groups, groups, groups, or groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3808—Acyclic saturated acids which can have further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3839—Polyphosphonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/38—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)]
    • C07F9/3804—Phosphonic acids [RP(=O)(OH)2]; Thiophosphonic acids ; [RP(=X1)(X2H)2(X1, X2 are each independently O, S or Se)] not used, see subgroups
    • C07F9/3839—Polyphosphonic acids
    • C07F9/386—Polyphosphonic acids containing hydroxy substituents in the hydrocarbon radicals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/10—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings
    • C09K19/12—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings at least two benzene rings directly linked, e.g. biphenyls
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/30—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing saturated or unsaturated non-aromatic rings, e.g. cyclohexane rings
    • C09K19/3001—Cyclohexane rings
    • C09K19/3003—Compounds containing at least two rings in which the different rings are directly linked (covalent bond)
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/40—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals
    • C09K19/404—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals containing boron or phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/40—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals
    • C09K19/406—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen or sulfur, e.g. silicon, metals containing silicon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/10—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings
    • C09K19/12—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings at least two benzene rings directly linked, e.g. biphenyls
    • C09K2019/121—Compounds containing phenylene-1,4-diyl (-Ph-)
    • C09K2019/122—Ph-Ph
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/06—Non-steroidal liquid crystal compounds
    • C09K19/08—Non-steroidal liquid crystal compounds containing at least two non-condensed rings
    • C09K19/30—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing saturated or unsaturated non-aromatic rings, e.g. cyclohexane rings
    • C09K19/3001—Cyclohexane rings
    • C09K19/3003—Compounds containing at least two rings in which the different rings are directly linked (covalent bond)
    • C09K2019/301—Cy-Cy-Ph
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/35—Material including carbon, e.g. graphite, grapheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Semiconductor Memories (AREA)
  • Electronic Switches (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Substances (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
SG11201900082RA 2016-07-07 2017-07-04 Electronic switching element SG11201900082RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016008207 2016-07-07
PCT/EP2017/066534 WO2018007337A2 (de) 2016-07-07 2017-07-04 Elektronisches schaltelement

Publications (1)

Publication Number Publication Date
SG11201900082RA true SG11201900082RA (en) 2019-02-27

Family

ID=59337642

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900082RA SG11201900082RA (en) 2016-07-07 2017-07-04 Electronic switching element

Country Status (10)

Country Link
US (2) US11063227B2 (de)
EP (1) EP3481916B1 (de)
JP (1) JP7001669B2 (de)
KR (1) KR102375199B1 (de)
CN (1) CN109476999B (de)
DE (1) DE102017005884A1 (de)
IL (1) IL264088B (de)
SG (1) SG11201900082RA (de)
TW (1) TWI781944B (de)
WO (1) WO2018007337A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017005884A1 (de) * 2016-07-07 2018-01-11 Merck Patent Gmbh Elektronisches Schaltelement
DE102018004733A1 (de) 2018-06-14 2019-12-19 Merck Patent Gmbh Verfahren zur Herstellung eines elektronischen Bauteils enthaltend eine selbstorganisierte Monolage
US11823808B2 (en) 2018-09-19 2023-11-21 University Of Massachusetts Conductive composite materials fabricated with protein nanowires
WO2020069523A1 (en) 2018-09-28 2020-04-02 University Of Massachusetts Electric power generation from ambient humidity using protein nanowires
JP7259368B2 (ja) * 2019-02-01 2023-04-18 富士通株式会社 抵抗変化素子の製造方法
WO2020191281A1 (en) 2019-03-20 2020-09-24 University Of Massachusetts Microbial nanowires modified to contain peptides and methods of making
JP7628086B2 (ja) * 2019-05-09 2025-02-07 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 芳香族化合物
KR20220007103A (ko) 2019-05-09 2022-01-18 메르크 파텐트 게엠베하 다이아몬드형 화합물
EP3813132A1 (de) * 2019-10-21 2021-04-28 Merck Patent GmbH Elektronische schaltvorrichtung
EP3813135A1 (de) 2019-10-23 2021-04-28 Merck Patent GmbH Zwei-bit-speichervorrichtung und verfahren zum betrieb der zwei-bit-speichervorrichtung und elektronisches bauteil
CN114616686B (zh) * 2019-10-29 2025-10-21 默克专利有限公司 制造分子层的方法和包含其的电子组件
US11631824B2 (en) * 2020-04-08 2023-04-18 University Of Massachusetts Memristor device comprising protein nanowires
US11982637B2 (en) 2020-04-22 2024-05-14 University Of Massachusetts Sensors comprising electrically-conductive protein nanowires
CN113782674B (zh) * 2020-06-09 2024-02-27 北京元芯碳基集成电路研究院 碳纳米管射频器件、制造方法及集成电路系统
CN111812908B (zh) * 2020-07-23 2021-12-10 电子科技大学 用于动态色彩调控的法布里-珀罗腔滤波器及方法
JP7438901B2 (ja) * 2020-09-11 2024-02-27 キオクシア株式会社 スイッチング回路および記憶装置
JP2022118984A (ja) * 2021-02-03 2022-08-16 キオクシア株式会社 メモリデバイス
EP4102571B1 (de) 2021-06-09 2024-11-13 Merck Patent GmbH Elektronisches bauelement mit einer vielzahl von zellen in einer dreidimensionalen anordnung und herstellungsmethode dafür
CN113594360B (zh) * 2021-07-19 2024-08-06 华中科技大学 一种基于无机分子晶体的忆阻器件、制备方法及其应用
EP4174077A1 (de) 2021-10-27 2023-05-03 Merck Patent GmbH Elektronische schaltvorrichtung
TW202347336A (zh) 2022-03-16 2023-12-01 德商馬克專利公司 電子切換裝置
IL300665A (en) * 2022-03-16 2023-10-01 Merck Patent Gmbh Electronic Switching Device
EP4349842A1 (de) 2022-10-04 2024-04-10 Merck Patent GmbH Hydroxyaminophosphinsäure-derivate
KR102859767B1 (ko) * 2023-04-17 2025-09-16 한국항공대학교산학협력단 전계효과로 과전압을 갖는 전하를 생성시키는 전계효과 촉매소자, 이를 포함하는 유해 물질 제거 장치, 및 이의 제조 방법

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0819103B2 (ja) * 1989-04-18 1996-02-28 財団法人相模中央化学研究所 ２―ハロピリジン―６―スルホン酸及びその塩
US5217953A (en) 1990-11-30 1993-06-08 The United States Of America As Represented By The Secretary Of The Department Of Health & Human Services Vasoactive intestinal peptide antagonist
DE19927627B4 (de) 1998-06-30 2008-01-31 Merck Patent Gmbh Flüssigkristallines Medium
DE10013681A1 (de) * 1999-03-31 2000-11-16 Merck Patent Gmbh Fluorcyclohexen-Derivate und flüssigkristallines Medium
JP5279975B2 (ja) 2000-12-19 2013-09-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 負のｄｃ異方性のアルケニル化合物と液晶性媒体
US7018685B2 (en) * 2001-01-11 2006-03-28 Merck Patent Gmbh Fluorinated aromatic compounds and the use of the same in liquid crystal mixtures
JP3931951B2 (ja) 2001-03-13 2007-06-20 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4033678B2 (ja) 2001-03-30 2008-01-16 独立行政法人科学技術振興機構 液晶性イオン伝導体とその製造方法
DE10227850A1 (de) 2002-06-21 2004-01-15 Infineon Technologies Ag Schaltungselement mit einer ersten Schicht aus einem elektrisch isolierenden Substratmaterial, Verfahren zur Herstellung eines Schaltungselements, Bispyridinium-Verbindungen sowie deren Verwendung in Schaltungselementen
JP4506105B2 (ja) 2003-06-10 2010-07-21 Ｄｉｃ株式会社 液晶配向促進剤、液晶組成物及び光学異方体
DE102005003475A1 (de) 2005-01-25 2006-08-03 Infineon Technologies Ag Neuartige Anbindung organischer Moleküle an eine Siliziumoberfläche zur Herstellung von Speicherelementen mit organischen Bestandteilen
JP2007177051A (ja) 2005-12-27 2007-07-12 Toyota Central Res & Dev Lab Inc 有機無機ハイブリッド組成物
US7279570B2 (en) * 2006-01-04 2007-10-09 Kent State University Nanoscale discotic liquid crystalline porphyrins
US20090131384A1 (en) 2006-03-22 2009-05-21 Syndexa Pharmaceuticals Corporation Compounds and methods for treatment of disorders associated with er stress
KR100836759B1 (ko) 2006-10-04 2008-06-10 삼성전자주식회사 유기 메모리 소자 및 그 형성 방법
EP1958999B1 (de) 2007-02-13 2012-07-11 Merck Patent GmbH Flüssigkristallines Medium
JP5494486B2 (ja) 2008-09-22 2014-05-14 Ｊｎｃ石油化学株式会社 液晶組成物および液晶表示素子
US8477408B2 (en) * 2009-04-02 2013-07-02 Hewlett-Packard Development Company, L.P. Electronically reconfigurable planar crossbar array optical elements
JP5601494B2 (ja) 2009-12-11 2014-10-08 Ｄｉｃ株式会社 液晶材料の製造方法
DE102011015546A1 (de) * 2010-04-26 2012-01-26 Merck Patent Gmbh Polymerisierbare Verbindungen und ihre Verwendung in Flüssigkristallmedien und Flüssigkristallanzeigen
US8834742B2 (en) 2010-07-30 2014-09-16 California Institute Of Technology Polymer-doped vertically-aligned nematic liquid crystals
DE102011108708A1 (de) 2010-09-25 2012-03-29 Merck Patent Gmbh Flüssigkristallanzeigen und flüssigkristalline Medien mit homöotroper Ausrichtung
KR101787445B1 (ko) 2011-01-13 2017-10-18 제이에스알 가부시끼가이샤 액정 배향제, 액정 표시 소자 및 이의 제조 방법
JP5674520B2 (ja) 2011-03-24 2015-02-25 株式会社東芝 有機分子メモリの製造方法
JP5717490B2 (ja) 2011-03-24 2015-05-13 株式会社東芝 有機分子メモリ
CN103619993B (zh) 2011-07-07 2016-10-12 默克专利股份有限公司 液晶介质
DE102012024126A1 (de) * 2011-12-20 2013-06-20 Merck Patent Gmbh Flüssigkristallines Medium
US9653159B2 (en) * 2012-01-18 2017-05-16 Xerox Corporation Memory device based on conductance switching in polymer/electrolyte junctions
KR20150017730A (ko) * 2012-05-10 2015-02-17 메르크 파텐트 게엠베하 전자 수송 층에서 사용되는 이온성 유기 화합물을 포함하는 제형
CN102931349A (zh) * 2012-11-10 2013-02-13 清华大学 一种片式忆阻器及其制备方法
JP5472542B1 (ja) * 2012-11-30 2014-04-16 Ｄｉｃ株式会社 液晶組成物、液晶表示素子および液晶ディスプレイ
KR20150100766A (ko) * 2012-12-17 2015-09-02 메르크 파텐트 게엠베하 호메오트로픽 정렬을 갖는 액정 디스플레이 및 액정 매질
US9117749B1 (en) * 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
CN103214353B (zh) 2013-04-10 2016-04-06 陕西师范大学 端烯多氟二芳基乙炔液晶化合物及其制备方法
JP6313427B2 (ja) 2013-04-16 2018-04-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 液晶媒体を含むデバイス
US20150144198A1 (en) * 2013-11-26 2015-05-28 Michael D. IRWIN Solar cell materials
CN103740376B (zh) 2013-12-30 2015-11-18 北京八亿时空液晶科技股份有限公司 含双氟双环己烷化合物的负介电各向异性液晶组合物及其应用
CN103773383B (zh) 2013-12-30 2015-07-15 北京八亿时空液晶科技股份有限公司 一种快响应负介电各向异性液晶组合物及其应用
DE102015002298A1 (de) 2014-03-17 2015-09-17 Merck Patent Gmbh 4,6-Difluor-dibenzofuran-Derivate
US9305715B2 (en) * 2014-08-01 2016-04-05 Hunt Energy Enterprises Llc Method of formulating perovskite solar cell materials
WO2016068745A1 (en) * 2014-10-31 2016-05-06 Nokia Technologies Oy Memory apparatus and method of production thereof
DE102015000120A1 (de) 2015-01-07 2016-07-07 Merck Patent Gmbh Elektronisches Bauelement
WO2016116119A1 (en) * 2015-01-19 2016-07-28 Merck Patent Gmbh Polymerisable compounds and the use thereof in liquid-crystal displays
JP2015111737A (ja) 2015-03-06 2015-06-18 株式会社東芝 有機分子メモリ
US20180258346A1 (en) 2015-09-15 2018-09-13 Merck Patent Gmbh Liquid-crystalline media having homeotropic alignment
KR102581443B1 (ko) * 2015-12-21 2023-09-21 삼성디스플레이 주식회사 액정 조성물 및 액정표시장치
EP3214154B1 (de) * 2016-03-01 2019-06-26 Merck Patent GmbH Flüssigkritallines medium und lichtmodulationselement
DE102017005884A1 (de) * 2016-07-07 2018-01-11 Merck Patent Gmbh Elektronisches Schaltelement
US9837439B1 (en) * 2016-08-12 2017-12-05 Globalfoundries Inc. Compensation of temperature effects in semiconductor device structures
DE102018004733A1 (de) * 2018-06-14 2019-12-19 Merck Patent Gmbh Verfahren zur Herstellung eines elektronischen Bauteils enthaltend eine selbstorganisierte Monolage

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DE102017005884A1 (de) 2018-01-11
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