[go: up one dir, main page]

SG11201608771WA - Method and device for plasma treatment of substrates - Google Patents

Method and device for plasma treatment of substrates

Info

Publication number
SG11201608771WA
SG11201608771WA SG11201608771WA SG11201608771WA SG11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA SG 11201608771W A SG11201608771W A SG 11201608771WA
Authority
SG
Singapore
Prior art keywords
substrates
plasma treatment
plasma
treatment
Prior art date
Application number
SG11201608771WA
Inventor
Thomas Glinsner
Christoph Flötgen
Johann Bernauer
Thomas Wagenleitner
Thomas Wieser
Florian Schmid
Thomas Plach
Roman Anzengruber
Alexander Nones
Uwe Kriebisch
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201608771WA publication Critical patent/SG11201608771WA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG11201608771WA 2014-05-09 2014-05-09 Method and device for plasma treatment of substrates SG11201608771WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/059524 WO2015169385A1 (en) 2014-05-09 2014-05-09 Method and device for plasma treatment of substrates

Publications (1)

Publication Number Publication Date
SG11201608771WA true SG11201608771WA (en) 2016-11-29

Family

ID=50693671

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608771WA SG11201608771WA (en) 2014-05-09 2014-05-09 Method and device for plasma treatment of substrates

Country Status (8)

Country Link
US (1) US10707059B2 (en)
EP (1) EP3140850B1 (en)
JP (1) JP6470313B2 (en)
KR (1) KR102161873B1 (en)
CN (1) CN107078013B (en)
SG (1) SG11201608771WA (en)
TW (1) TWI677006B (en)
WO (1) WO2015169385A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102024568B1 (en) * 2018-02-13 2019-09-24 한국기초과학지원연구원 Point etching module using annular surface dielectric barrier discharge apparatus and method for control etching profile of point etching module
JP6966402B2 (en) * 2018-09-11 2021-11-17 株式会社Kokusai Electric Substrate processing equipment, manufacturing method of semiconductor equipment, and electrodes of substrate processing equipment
DE102020209801A1 (en) 2020-08-04 2022-02-10 Robert Bosch Gesellschaft mit beschränkter Haftung Process for controlling the temperature of a substrate or a component, in particular a surface of the substrate or component to be coated
DE102020124022A1 (en) 2020-09-15 2022-03-17 centrotherm international AG Workpiece carrier, system and operating procedure for PECVD

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012734A (en) 1983-07-01 1985-01-23 Hitachi Ltd plasma processing equipment
JPS62130277A (en) * 1985-08-09 1987-06-12 Toa Nenryo Kogyo Kk Method and apparatus for producing amorphous silicon thin film
JPS63188943A (en) * 1987-01-30 1988-08-04 Nec Corp Plasma cvd system
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
JPH01108382A (en) * 1987-10-21 1989-04-25 Nec Corp Plasma vapor growth device
US5055964A (en) 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
JPH04317325A (en) * 1991-04-17 1992-11-09 Nec Corp Manufacturing apparatus for semiconductor device
AU2003195A (en) * 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
KR100252210B1 (en) * 1996-12-24 2000-04-15 윤종용 Dry etching facility for manufacturing semiconductor devices
JPH10289881A (en) * 1997-04-15 1998-10-27 Kokusai Electric Co Ltd Plasma CVD equipment
KR100271767B1 (en) * 1998-06-09 2001-02-01 윤종용 Semiconductor device manufacturing equipment using plasma
JP2002009043A (en) * 2000-06-23 2002-01-11 Hitachi Ltd Etching apparatus and method for manufacturing semiconductor device using the same
US6741446B2 (en) 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
DE10152101A1 (en) 2001-10-23 2003-05-22 Infineon Technologies Ag Electrostatic wafer holder
US20060278339A1 (en) * 2005-06-13 2006-12-14 Lam Research Corporation, A Delaware Corporation Etch rate uniformity using the independent movement of electrode pieces
JP2007184476A (en) * 2006-01-10 2007-07-19 Hitachi Kokusai Electric Inc Substrate processing equipment
KR100823302B1 (en) * 2006-12-08 2008-04-17 주식회사 테스 Plasma processing equipment
KR100978754B1 (en) * 2008-04-03 2010-08-30 주식회사 테스 Plasma processing equipment
US20080202689A1 (en) * 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
US20080277064A1 (en) * 2006-12-08 2008-11-13 Tes Co., Ltd. Plasma processing apparatus
KR20080053167A (en) * 2006-12-08 2008-06-12 주식회사 테스 Plasma processing equipment
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US20120164834A1 (en) * 2010-12-22 2012-06-28 Kevin Jennings Variable-Density Plasma Processing of Semiconductor Substrates
JP6120527B2 (en) * 2012-11-05 2017-04-26 東京エレクトロン株式会社 Plasma processing method
WO2015113591A1 (en) * 2014-01-28 2015-08-06 Ev Group E. Thallner Gmbh Device and method for removing a first substrate

Also Published As

Publication number Publication date
WO2015169385A1 (en) 2015-11-12
EP3140850A1 (en) 2017-03-15
CN107078013B (en) 2019-06-21
EP3140850B1 (en) 2019-10-16
JP6470313B2 (en) 2019-02-13
KR20170002396A (en) 2017-01-06
TWI677006B (en) 2019-11-11
TW201543532A (en) 2015-11-16
CN107078013A (en) 2017-08-18
JP2017520080A (en) 2017-07-20
US20170047203A1 (en) 2017-02-16
US10707059B2 (en) 2020-07-07
KR102161873B1 (en) 2020-10-06

Similar Documents

Publication Publication Date Title
KR102342131B9 (en) Substrate treatment apparatus and substrate treatment method
SG11201606935VA (en) System and method for bi-facial processing of substrates
EP3113736A4 (en) Method for treatment of migraine and other headaches
SG10201508119XA (en) Substrate processing apparatus and processing method
TWI799710B (en) Method and device for surface treatment of substrates
SG11201609143TA (en) Plasma processing method and plasma processing apparatus
SG11201607719TA (en) Method and device for the surface treatment of substrates
ES3050210T3 (en) Plasma treatment device and method of treating items
SG11201710053SA (en) Substrate treatment device and substrate treatment method
EP3191185A4 (en) Device for targeted treatment of dermastoses
EP3133919A4 (en) Agents and methods for treatment of pathogens
SG11201702404XA (en) Plasma processing method and plasma processing apparatus
GB201410116D0 (en) Method of treatment
EP3228150A4 (en) Apparatus and method for executing task of electronic device
GB201421197D0 (en) Apparatus and method of use thereof
IL253028A0 (en) Method of treatment
SG10201505886XA (en) Plasma processing apparatus and plasma processing method
SG11201608771WA (en) Method and device for plasma treatment of substrates
EP3206698A4 (en) Methods and apparatus for treating sites of infection
EP3215038A4 (en) Apparatus and method of treating spinous processes
GB2528379B (en) Panel apparatus and method of use thereof
IL249654A0 (en) Apparatus and method for vacuum vibro-compression of mixes
IL248847A0 (en) Dosage of dasotraline and method for treatment of adhd
SG10201703430RA (en) Method and device for surface treatment of substrates
GB201416545D0 (en) Novel Method For Treatment Of Substrates