SG11201606136UA - Method and device for bonding substrates - Google Patents
Method and device for bonding substratesInfo
- Publication number
- SG11201606136UA SG11201606136UA SG11201606136UA SG11201606136UA SG11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA
- Authority
- SG
- Singapore
- Prior art keywords
- bonding substrates
- substrates
- bonding
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/447—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of pressure, e.g. thermo-compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2014/052037 WO2015113641A1 (en) | 2014-02-03 | 2014-02-03 | Method and device for bonding substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201606136UA true SG11201606136UA (en) | 2016-09-29 |
Family
ID=50064594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606136UA SG11201606136UA (en) | 2014-02-03 | 2014-02-03 | Method and device for bonding substrates |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US10014193B2 (en) |
| EP (2) | EP3103135B1 (en) |
| JP (1) | JP6395847B2 (en) |
| KR (3) | KR102186019B1 (en) |
| CN (3) | CN110707026A (en) |
| SG (1) | SG11201606136UA (en) |
| TW (3) | TWI660845B (en) |
| WO (1) | WO2015113641A1 (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6789930B2 (en) | 2016-02-16 | 2020-11-25 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | How to bond the board |
| CN109196351B (en) | 2016-02-17 | 2021-08-20 | Ev 集团 E·索尔纳有限责任公司 | Measuring equipment and measuring methods |
| WO2017168534A1 (en) * | 2016-03-28 | 2017-10-05 | 株式会社ニコン | Substrate bonding device and substrate bonding method |
| CN109416406B (en) | 2016-07-05 | 2023-06-20 | 深圳帧观德芯科技有限公司 | Joining materials with different coefficients of thermal expansion |
| EP3520133B1 (en) | 2016-09-29 | 2020-04-29 | EV Group E. Thallner GmbH | Apparatus and method for bonding of two substrates |
| US10954122B2 (en) | 2017-03-16 | 2021-03-23 | Ev Group E. Thallner Gmbh | Method for bonding of at least three substrates |
| CN110352488A (en) | 2017-03-20 | 2019-10-18 | Ev 集团 E·索尔纳有限责任公司 | Method for being directed at two substrates |
| JP6854696B2 (en) * | 2017-05-02 | 2021-04-07 | 東京エレクトロン株式会社 | Joining device and joining method |
| WO2019057286A1 (en) | 2017-09-21 | 2019-03-28 | Ev Group E. Thallner Gmbh | DEVICE AND METHOD FOR BONDING SUBSTRATES |
| US10872804B2 (en) * | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
| JP6967980B2 (en) * | 2018-01-23 | 2021-11-17 | 東京エレクトロン株式会社 | Joining method and joining device |
| WO2019166078A1 (en) | 2018-02-27 | 2019-09-06 | Ev Group E. Thallner Gmbh | Mark field, method and device for determining positions |
| KR102619624B1 (en) | 2018-11-13 | 2023-12-29 | 삼성전자주식회사 | Apparatus of bonding substrates and method of bonding substrates |
| JP6818076B2 (en) * | 2019-04-17 | 2021-01-20 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Equipment and methods for joining substrates |
| JP7562705B2 (en) | 2020-06-29 | 2024-10-07 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Method and apparatus for bonding substrates - Patents.com |
| JP2020188284A (en) * | 2020-08-04 | 2020-11-19 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Method and device for bonding substrates |
| KR102840203B1 (en) | 2020-09-01 | 2025-08-01 | 삼성전자주식회사 | Semiconductor substrate alignment device and semiconductor substrate bonding system using the same |
| KR20230123494A (en) * | 2020-12-25 | 2023-08-23 | 도쿄엘렉트론가부시키가이샤 | Substrate bonding system and substrate bonding method |
| TWI776665B (en) * | 2021-09-03 | 2022-09-01 | 天虹科技股份有限公司 | Alignment mechanism and bonding machine using the alignment mechanism |
| CN217817981U (en) * | 2021-12-07 | 2022-11-15 | 志圣科技（广州）有限公司 | Heating device and oven |
| KR20250057782A (en) | 2022-09-02 | 2025-04-29 | 에베 그룹 에. 탈너 게엠베하 | Vacuum substrate holder optimized for vacuum sealing |
| DE102023110438B4 (en) * | 2023-04-24 | 2025-05-15 | Besi Switzerland Ag | Device with an improved hold-down device |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002237375A (en) | 2000-12-05 | 2002-08-23 | Ibiden Co Ltd | Ceramic plate for semiconductor manufacturing/testing device, and manufacturing method of the same |
| EP1341216A1 (en) * | 2000-12-05 | 2003-09-03 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacturing and inspecting devices, and method of manufacturing the ceramic substrate |
| US7102726B2 (en) * | 2002-03-15 | 2006-09-05 | Lg. Philips Lcd Co., Ltd. | System for fabricating liquid crystal display and method of fabricating liquid crystal display using the same |
| JP2004119554A (en) | 2002-09-25 | 2004-04-15 | Rorze Corp | Device for holding a thin plate and manufacturing equipment provided with the same |
| TW588202B (en) * | 2002-12-27 | 2004-05-21 | Chi Mei Optoelectronics Corp | Curing method and apparatus |
| JP2004253789A (en) * | 2003-01-29 | 2004-09-09 | Kyocera Corp | Electrostatic chuck |
| KR20040070008A (en) * | 2003-01-29 | 2004-08-06 | 쿄세라 코포레이션 | Electrostatic chuck |
| US20070125489A1 (en) * | 2005-09-08 | 2007-06-07 | Oregon State University | Microfluidic welded devices or components thereof and method for their manufacture |
| JP2007201068A (en) | 2006-01-25 | 2007-08-09 | Taiheiyo Cement Corp | Electrostatic chuck |
| JP4670677B2 (en) * | 2006-02-17 | 2011-04-13 | 東京エレクトロン株式会社 | Heating device, heating method, coating device, and storage medium |
| JP2008103544A (en) | 2006-10-19 | 2008-05-01 | Yaskawa Electric Corp | Aligner device |
| JP4953784B2 (en) | 2006-12-01 | 2012-06-13 | 信越ポリマー株式会社 | Clamp jig for semiconductor wafer |
| KR100879760B1 (en) * | 2007-08-06 | 2009-01-21 | 주식회사 실트론 | Substrate pair cleaving device and substrate pair cleaving method |
| JP5299837B2 (en) * | 2007-12-05 | 2013-09-25 | 株式会社ニコン | SUPPORT DEVICE, HEAT / PRESSURE DEVICE, AND HEAT / PRESSURE METHOD |
| WO2009091189A2 (en) * | 2008-01-16 | 2009-07-23 | Sosul Co., Ltd. | Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same |
| KR100917798B1 (en) * | 2008-01-30 | 2009-09-18 | 주식회사 에이디피엔지니어링 | Board Bonding Device and Board Bonding Method |
| TWI475594B (en) * | 2008-05-19 | 2015-03-01 | Entegris Inc | Electrostatic chuck |
| KR20100108418A (en) * | 2008-11-14 | 2010-10-06 | 도쿄엘렉트론가부시키가이샤 | Bonding apparatus and bonding method |
| TW201131689A (en) * | 2009-07-21 | 2011-09-16 | Nikon Corp | Substrate holder system, substrate joining apparatus and method for manufacturing a device |
| JP4831842B2 (en) * | 2009-10-28 | 2011-12-07 | 三菱重工業株式会社 | Joining device control device and multilayer joining method |
| JP4801769B2 (en) | 2009-11-30 | 2011-10-26 | 三菱重工業株式会社 | Joining method, joining device control device, joining device |
| JP5671799B2 (en) * | 2010-01-05 | 2015-02-18 | 株式会社ニコン | Holder rack |
| JP5314607B2 (en) * | 2010-01-20 | 2013-10-16 | 東京エレクトロン株式会社 | Joining apparatus, joining method, program, and computer storage medium |
| JP5549343B2 (en) * | 2010-03-18 | 2014-07-16 | 株式会社ニコン | Substrate bonding apparatus, substrate holder, substrate bonding method, device manufacturing method, and alignment apparatus |
| US8500182B2 (en) * | 2010-06-17 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vacuum wafer carriers for strengthening thin wafers |
| US8826693B2 (en) * | 2010-08-30 | 2014-09-09 | Corning Incorporated | Apparatus and method for heat treating a glass substrate |
| JP6014302B2 (en) * | 2010-09-06 | 2016-10-25 | 東京応化工業株式会社 | Bonding apparatus and bonding method |
| JP2012250230A (en) * | 2011-06-02 | 2012-12-20 | Tokyo Ohka Kogyo Co Ltd | Heating device, coating device and heating method |
| JP2013004609A (en) * | 2011-06-14 | 2013-01-07 | Nikon Corp | Substrate bonding method |
| EP2979298B9 (en) | 2013-03-27 | 2017-07-26 | EV Group E. Thallner GmbH | Receptacle device, device and method for handling substrate stacks |
| CN104364882B (en) | 2013-05-29 | 2018-11-16 | Ev 集团 E·索尔纳有限责任公司 | Apparatus and method for bonding substrates |
| WO2014202106A1 (en) | 2013-06-17 | 2014-12-24 | Ev Group E. Thallner Gmbh | Device and method for aligning substrates |
| US20160126085A1 (en) | 2013-07-04 | 2016-05-05 | Ev Group E. Thallner Gmbh | Method and device for treating a substrate surface |
| WO2015082020A1 (en) | 2013-12-06 | 2015-06-11 | Ev Group E. Thallner Gmbh | Device and method for aligning substrates |
-
2014
- 2014-02-03 JP JP2016549744A patent/JP6395847B2/en active Active
- 2014-02-03 WO PCT/EP2014/052037 patent/WO2015113641A1/en not_active Ceased
- 2014-02-03 KR KR1020197022838A patent/KR102186019B1/en active Active
- 2014-02-03 KR KR1020207034144A patent/KR102259484B1/en active Active
- 2014-02-03 CN CN201910992351.8A patent/CN110707026A/en active Pending
- 2014-02-03 EP EP14702826.0A patent/EP3103135B1/en active Active
- 2014-02-03 US US15/110,417 patent/US10014193B2/en active Active
- 2014-02-03 SG SG11201606136UA patent/SG11201606136UA/en unknown
- 2014-02-03 CN CN201910992358.XA patent/CN110707027B/en active Active
- 2014-02-03 CN CN201480074793.XA patent/CN105960703B/en active Active
- 2014-02-03 EP EP17200753.6A patent/EP3312871B1/en active Active
- 2014-02-03 KR KR1020167021336A patent/KR102009551B1/en active Active
-
2015
- 2015-02-03 TW TW104103608A patent/TWI660845B/en active
- 2015-02-03 TW TW110100490A patent/TWI752791B/en active
- 2015-02-03 TW TW108109184A patent/TWI750463B/en active
-
2018
- 2018-05-30 US US15/992,274 patent/US10971378B2/en active Active
-
2021
- 2021-03-01 US US17/188,114 patent/US20210183666A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN110707026A (en) | 2020-01-17 |
| EP3312871A1 (en) | 2018-04-25 |
| US20160336203A1 (en) | 2016-11-17 |
| TW201927577A (en) | 2019-07-16 |
| JP6395847B2 (en) | 2018-09-26 |
| EP3312871B1 (en) | 2024-09-25 |
| EP3103135B1 (en) | 2021-05-12 |
| KR20200138415A (en) | 2020-12-09 |
| KR102009551B1 (en) | 2019-08-09 |
| CN105960703B (en) | 2019-12-03 |
| EP3103135A1 (en) | 2016-12-14 |
| CN110707027B (en) | 2023-10-31 |
| KR102186019B1 (en) | 2020-12-04 |
| US20210183666A1 (en) | 2021-06-17 |
| TW201534476A (en) | 2015-09-16 |
| KR20190093708A (en) | 2019-08-09 |
| TWI750463B (en) | 2021-12-21 |
| TW202118639A (en) | 2021-05-16 |
| CN105960703A (en) | 2016-09-21 |
| TWI660845B (en) | 2019-06-01 |
| WO2015113641A1 (en) | 2015-08-06 |
| CN110707027A (en) | 2020-01-17 |
| KR20160115930A (en) | 2016-10-06 |
| JP2017511970A (en) | 2017-04-27 |
| TWI752791B (en) | 2022-01-11 |
| KR102259484B1 (en) | 2021-06-02 |
| US10971378B2 (en) | 2021-04-06 |
| US10014193B2 (en) | 2018-07-03 |
| US20180277403A1 (en) | 2018-09-27 |
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