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SG11201504522TA - Enhanced adhesion of seed layer for solar cell conductive contact - Google Patents

Enhanced adhesion of seed layer for solar cell conductive contact

Info

Publication number
SG11201504522TA
SG11201504522TA SG11201504522TA SG11201504522TA SG11201504522TA SG 11201504522T A SG11201504522T A SG 11201504522TA SG 11201504522T A SG11201504522T A SG 11201504522TA SG 11201504522T A SG11201504522T A SG 11201504522TA SG 11201504522T A SG11201504522T A SG 11201504522TA
Authority
SG
Singapore
Prior art keywords
solar cell
seed layer
conductive contact
enhanced adhesion
cell conductive
Prior art date
Application number
SG11201504522TA
Inventor
Junbo Wu
Michael C Johnson
Michael Cudzinovic
Joseph Behnke
Xi Zhu
David D Smith
Richard Hamilton Sewell
Xiuwen Tu
Seung Bum Rim
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of SG11201504522TA publication Critical patent/SG11201504522TA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
SG11201504522TA 2012-12-21 2013-11-27 Enhanced adhesion of seed layer for solar cell conductive contact SG11201504522TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/723,901 US9263601B2 (en) 2012-12-21 2012-12-21 Enhanced adhesion of seed layer for solar cell conductive contact
PCT/US2013/072421 WO2014099322A1 (en) 2012-12-21 2013-11-27 Enhanced adhesion of seed layer for solar cell conductive contact

Publications (1)

Publication Number Publication Date
SG11201504522TA true SG11201504522TA (en) 2015-07-30

Family

ID=50973256

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504522TA SG11201504522TA (en) 2012-12-21 2013-11-27 Enhanced adhesion of seed layer for solar cell conductive contact

Country Status (10)

Country Link
US (1) US9263601B2 (en)
EP (1) EP2936561A4 (en)
JP (1) JP6447926B2 (en)
KR (1) KR102291450B1 (en)
CN (1) CN105122462B (en)
AU (2) AU2013363570A1 (en)
MY (1) MY186737A (en)
SG (1) SG11201504522TA (en)
TW (1) TWI602317B (en)
WO (1) WO2014099322A1 (en)

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US9385000B2 (en) * 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
CN104362216B (en) * 2014-10-23 2017-02-15 云南大学 Production method of front grid line electrode of crystalline silicon solar cell
US10535790B2 (en) * 2015-06-25 2020-01-14 Sunpower Corporation One-dimensional metallization for solar cells
DE102015115765B4 (en) * 2015-09-18 2019-06-27 Hanwha Q Cells Gmbh Solar cell and solar cell manufacturing process
US10840394B2 (en) * 2015-09-25 2020-11-17 Total Marketing Services Conductive strip based mask for metallization of semiconductor devices
EP3206233A1 (en) * 2016-02-12 2017-08-16 Lg Electronics Inc. Solar cell and method of manufacturing the same
US11424373B2 (en) * 2016-04-01 2022-08-23 Sunpower Corporation Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells
US9871150B1 (en) * 2016-07-01 2018-01-16 Sunpower Corporation Protective region for metallization of solar cells
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USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
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USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
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USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
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DE102019006096B4 (en) * 2019-08-29 2024-12-24 Azur Space Solar Power Gmbh Stacked multi-junction solar cell with a dielectric insulation layer system

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Also Published As

Publication number Publication date
TW201438261A (en) 2014-10-01
US20140174518A1 (en) 2014-06-26
MY186737A (en) 2021-08-16
KR20150097580A (en) 2015-08-26
JP2016502284A (en) 2016-01-21
WO2014099322A1 (en) 2014-06-26
CN105122462A (en) 2015-12-02
US9263601B2 (en) 2016-02-16
EP2936561A1 (en) 2015-10-28
KR102291450B1 (en) 2021-08-18
JP6447926B2 (en) 2019-01-09
CN105122462B (en) 2018-08-17
TWI602317B (en) 2017-10-11
AU2018205118A1 (en) 2018-07-26
EP2936561A4 (en) 2015-12-23
AU2013363570A1 (en) 2015-06-18

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