SG11201503368TA - Method of fabricating semiconductor devices - Google Patents
Method of fabricating semiconductor devicesInfo
- Publication number
- SG11201503368TA SG11201503368TA SG11201503368TA SG11201503368TA SG11201503368TA SG 11201503368T A SG11201503368T A SG 11201503368TA SG 11201503368T A SG11201503368T A SG 11201503368TA SG 11201503368T A SG11201503368T A SG 11201503368TA SG 11201503368T A SG11201503368T A SG 11201503368TA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor devices
- fabricating semiconductor
- fabricating
- devices
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361757931P | 2013-01-29 | 2013-01-29 | |
| US201361847295P | 2013-07-17 | 2013-07-17 | |
| PCT/SG2013/000542 WO2014120086A1 (en) | 2013-01-29 | 2013-12-19 | Method of fabricating semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201503368TA true SG11201503368TA (en) | 2015-05-28 |
Family
ID=51262672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201503368TA SG11201503368TA (en) | 2013-01-29 | 2013-12-19 | Method of fabricating semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9530930B2 (en) |
| SG (1) | SG11201503368TA (en) |
| TW (1) | TWI617052B (en) |
| WO (1) | WO2014120086A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9653647B2 (en) * | 2013-06-14 | 2017-05-16 | Micron Technology, Inc. | Ultrathin solid state dies and methods of manufacturing the same |
| DE102014111106A1 (en) * | 2014-08-05 | 2016-02-11 | Osram Opto Semiconductors Gmbh | Electronic component, optoelectronic component, component arrangement and method for producing an electronic component |
| DE102014116999B4 (en) * | 2014-11-20 | 2025-09-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing an optoelectronic semiconductor chip |
| DE102016114550B4 (en) | 2016-08-05 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Component and method for manufacturing components |
| DE102017104752B4 (en) | 2017-03-07 | 2022-10-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Process for transferring semiconductor bodies and semiconductor chip |
| US10763135B2 (en) * | 2018-01-30 | 2020-09-01 | Facebook Technologies, Llc | Integrated elastomeric interface layer formation and singulation for light emitting diodes |
| CN113299802B (en) * | 2021-05-06 | 2022-09-09 | 深圳市思坦科技有限公司 | Preparation method of LED chip structure and obtained LED chip structure |
| EP4524276A4 (en) * | 2022-05-13 | 2025-09-17 | Yunnan Zhongxuan Liquid Metal Tech Co Ltd | Metal structural element for use in conjunction with gallium-based liquid metal, manufacturing method therefor, and application thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| US6562648B1 (en) | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
| US6830990B1 (en) * | 2001-07-06 | 2004-12-14 | Lightconnect, Inc. | Method and apparatus for dicing released MEMS wafers |
| US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
| KR20050082040A (en) | 2004-02-17 | 2005-08-22 | 어드밴스드 에피텍시 테크날리지 | Method of forming light emitting diode |
| US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
| US7432119B2 (en) | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
| KR100691111B1 (en) | 2005-08-09 | 2007-03-09 | 엘지전자 주식회사 | Vertical Light Emitting Diode and Manufacturing Method Thereof |
| US7968379B2 (en) * | 2006-03-09 | 2011-06-28 | SemiLEDs Optoelectronics Co., Ltd. | Method of separating semiconductor dies |
| US8936969B2 (en) * | 2012-03-21 | 2015-01-20 | Stats Chippac, Ltd. | Semiconductor device and method of singulating semiconductor wafer along modified region within non-active region formed by irradiating energy through mounting tape |
-
2013
- 2013-12-19 SG SG11201503368TA patent/SG11201503368TA/en unknown
- 2013-12-19 US US14/762,842 patent/US9530930B2/en not_active Expired - Fee Related
- 2013-12-19 WO PCT/SG2013/000542 patent/WO2014120086A1/en not_active Ceased
- 2013-12-27 TW TW102148851A patent/TWI617052B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201445768A (en) | 2014-12-01 |
| US20150325742A1 (en) | 2015-11-12 |
| TWI617052B (en) | 2018-03-01 |
| US9530930B2 (en) | 2016-12-27 |
| WO2014120086A8 (en) | 2015-01-15 |
| WO2014120086A1 (en) | 2014-08-07 |
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