SG11201503354XA - Heat actuated and projected lithography systems and methods - Google Patents
Heat actuated and projected lithography systems and methodsInfo
- Publication number
- SG11201503354XA SG11201503354XA SG11201503354XA SG11201503354XA SG11201503354XA SG 11201503354X A SG11201503354X A SG 11201503354XA SG 11201503354X A SG11201503354X A SG 11201503354XA SG 11201503354X A SG11201503354X A SG 11201503354XA SG 11201503354X A SG11201503354X A SG 11201503354XA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- lithography systems
- heat actuated
- projected lithography
- projected
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2049—Exposure; Apparatus therefor using a cantilever
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261719907P | 2012-10-29 | 2012-10-29 | |
| US201261719918P | 2012-10-29 | 2012-10-29 | |
| PCT/US2013/064959 WO2014070444A1 (en) | 2012-10-29 | 2013-10-15 | Heat actuated and projected lithography systems and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201503354XA true SG11201503354XA (en) | 2015-06-29 |
Family
ID=50627937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201503354XA SG11201503354XA (en) | 2012-10-29 | 2013-10-15 | Heat actuated and projected lithography systems and methods |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9766551B2 (en) |
| EP (1) | EP2926197A4 (en) |
| CN (1) | CN104903793A (en) |
| SG (1) | SG11201503354XA (en) |
| WO (1) | WO2014070444A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105631810B (en) * | 2016-01-20 | 2018-09-11 | 北京邮电大学 | A kind of printing process and system based on the multiplexing of pixel site |
| US10060736B1 (en) * | 2016-04-21 | 2018-08-28 | Appled Materials Israel Ltd. | Near-field sensor height control |
| KR102510967B1 (en) * | 2016-12-07 | 2023-03-16 | 노오쓰웨스턴 유니버시티 | Liquid Masks for Micromanufacturing Processes |
| US10228670B2 (en) * | 2016-12-15 | 2019-03-12 | Woodward, Inc. | Characterization using multiplexed resistance reading |
| CN110720108A (en) * | 2017-06-02 | 2020-01-21 | 泰拉印刷有限责任公司 | Fabrication of micro/nano-scale barcodes using cantilever-free scanning probe lithography |
| US11640152B2 (en) | 2017-09-28 | 2023-05-02 | Siemens Aktiengesellschaft | Method and device for providing service for a programmable logic controller |
| KR102098867B1 (en) * | 2018-09-12 | 2020-04-09 | (주)아이테드 | Imprinting apparatus and imprinting method |
| DE102019001137B3 (en) | 2019-02-15 | 2020-08-06 | Karlsruher Institut für Technologie | Patterned, dendrimeric substrate surfaces and their manufacture and use |
| JP7587863B2 (en) * | 2019-05-30 | 2024-11-21 | マイクロタウ アイピー ピーティーワイ リミテッド | Systems and methods for manufacturing microstructures - Patents.com |
| CN111710754B (en) * | 2020-05-11 | 2023-01-06 | 桂林理工大学 | A two-phase one-step solvothermal preparation method of Bi2S3-graphene-ZnS optoelectronic composite materials |
| DE102021108647A1 (en) | 2021-04-07 | 2022-10-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | DEVICE AND METHOD FOR MEASURING AT LEAST ONE CHARACTERISTIC OF AN OPTOELECTRONIC COMPONENT |
| WO2023224652A2 (en) * | 2021-10-01 | 2023-11-23 | Northwestern University | Methods of forming bioactive patterns using beam pen lithograpy-controlled cross-linking photopolymerization |
| WO2025206969A1 (en) * | 2024-03-29 | 2025-10-02 | Institutul Naţional De Cercetare-Dezvoltare Pentru Microtehnologie - Imt Bucureşti | Nanolithography system based on electric current |
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| JP3268797B2 (en) | 1991-10-09 | 2002-03-25 | オリンパス光学工業株式会社 | Light introduction device |
| US5472881A (en) | 1992-11-12 | 1995-12-05 | University Of Utah Research Foundation | Thiol labeling of DNA for attachment to gold surfaces |
| US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
| JPH07106229A (en) * | 1993-10-05 | 1995-04-21 | Hitachi Ltd | Optical lithography method and apparatus |
| US6339217B1 (en) | 1995-07-28 | 2002-01-15 | General Nanotechnology Llc | Scanning probe microscope assembly and method for making spectrophotometric, near-field, and scanning probe measurements |
| US5846909A (en) | 1995-05-22 | 1998-12-08 | University Of Texas System | Molecular level, precision control over the interfacial properties of high-TC superconductor structures and devices |
| US5942397A (en) | 1996-12-11 | 1999-08-24 | Tarlov; Michael J. | Surface immobilization of biopolymers |
| US5859937A (en) | 1997-04-04 | 1999-01-12 | Neomecs Incorporated | Minimally invasive sensor |
| JP3194363B2 (en) | 1997-06-25 | 2001-07-30 | 財団法人神奈川科学技術アカデミー | Patterning method and patterning apparatus |
| JP3524343B2 (en) | 1997-08-26 | 2004-05-10 | キヤノン株式会社 | Method for forming minute opening, projection having minute opening, probe or multi-probe using the same, surface observation apparatus, exposure apparatus, and information processing apparatus using the probe |
| JP3697034B2 (en) | 1997-08-26 | 2005-09-21 | キヤノン株式会社 | Method of manufacturing protrusions having minute openings, and probes or multiprobes using them |
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| US6794296B1 (en) | 1998-09-12 | 2004-09-21 | Universitat Gesamthochschule Kassel | Aperture in a semiconductor material, and the production and use thereof |
| DE69939005D1 (en) | 1998-10-13 | 2008-08-14 | Gambro Lundia Ab | BIOKOMPATIBLE POLYMER FILM |
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| JP2002005810A (en) | 2000-06-16 | 2002-01-09 | Canon Inc | Probe and manufacturing method thereof, surface observation device, exposure device, information processing device |
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| KR100792385B1 (en) | 2005-12-14 | 2008-01-09 | 주식회사 하이닉스반도체 | Nano tip electron emission source, method for manufacturing the same, and nano tip lithography apparatus having the same |
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| JP2011519168A (en) * | 2008-04-25 | 2011-06-30 | ノースウェスターン ユニヴァーシティ | Polymer pen lithography |
| WO2010096593A2 (en) * | 2009-02-18 | 2010-08-26 | Northwestern University | Beam pen lithography |
| US8753813B2 (en) | 2009-12-07 | 2014-06-17 | Northwestern University | Generation of combinatorial patterns by deliberate tilting of a polymer-pen array |
| KR101345337B1 (en) * | 2011-06-13 | 2013-12-30 | 한국생명공학연구원 | Preparation apparatus and method of nanopositioning for one-tip multicomponent nano-inking system in the dip-pen nanolithography |
| US20150309073A1 (en) * | 2012-07-13 | 2015-10-29 | Northwestern University | Multifunctional graphene coated scanning tips |
-
2013
- 2013-10-15 EP EP13851211.6A patent/EP2926197A4/en not_active Withdrawn
- 2013-10-15 SG SG11201503354XA patent/SG11201503354XA/en unknown
- 2013-10-15 CN CN201380068718.8A patent/CN104903793A/en active Pending
- 2013-10-15 WO PCT/US2013/064959 patent/WO2014070444A1/en not_active Ceased
- 2013-10-15 US US14/439,252 patent/US9766551B2/en active Active
-
2017
- 2017-09-01 US US15/693,942 patent/US20180059550A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20150286148A1 (en) | 2015-10-08 |
| EP2926197A1 (en) | 2015-10-07 |
| EP2926197A4 (en) | 2016-09-07 |
| WO2014070444A1 (en) | 2014-05-08 |
| US20180059550A1 (en) | 2018-03-01 |
| US9766551B2 (en) | 2017-09-19 |
| CN104903793A (en) | 2015-09-09 |
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