SG11201407086TA - Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate - Google Patents
Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrateInfo
- Publication number
- SG11201407086TA SG11201407086TA SG11201407086TA SG11201407086TA SG11201407086TA SG 11201407086T A SG11201407086T A SG 11201407086TA SG 11201407086T A SG11201407086T A SG 11201407086TA SG 11201407086T A SG11201407086T A SG 11201407086TA SG 11201407086T A SG11201407086T A SG 11201407086TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- substrate
- solution
- slurry
- solution set
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012116867 | 2012-05-22 | ||
| PCT/JP2013/058831 WO2013175859A1 (en) | 2012-05-22 | 2013-03-26 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201407086TA true SG11201407086TA (en) | 2015-02-27 |
Family
ID=49623563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201407086TA SG11201407086TA (en) | 2012-05-22 | 2013-03-26 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10557059B2 (en) |
| JP (1) | JP5943074B2 (en) |
| KR (1) | KR102034329B1 (en) |
| CN (1) | CN104321852B (en) |
| SG (1) | SG11201407086TA (en) |
| TW (1) | TWI576418B (en) |
| WO (1) | WO2013175859A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130136593A (en) | 2010-03-12 | 2013-12-12 | 히타치가세이가부시끼가이샤 | Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same |
| US9881801B2 (en) | 2010-11-22 | 2018-01-30 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| SG11201405091TA (en) * | 2012-02-21 | 2014-09-26 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| JP5943074B2 (en) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid and polishing method for substrate |
| KR102034328B1 (en) | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| JP6233296B2 (en) * | 2014-12-26 | 2017-11-22 | 株式会社Sumco | Abrasive grain evaluation method and silicon wafer manufacturing method |
| JP6775453B2 (en) * | 2017-03-23 | 2020-10-28 | 山口精研工業株式会社 | Abrasive composition for magnetic disk substrates |
Family Cites Families (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3123452A (en) | 1964-03-03 | Glass polish and process of polishing | ||
| US3097083A (en) | 1959-07-02 | 1963-07-09 | American Potash & Chem Corp | Polishing composition and process of forming same |
| BR9104844A (en) | 1991-11-06 | 1993-05-11 | Solvay | PROCESS FOR THE SELECTIVE EXTRACTION OF CERIO FROM AN Aqueous SOLUTION OF ELEMENTS FROM RARE LANDS |
| FR2684662B1 (en) | 1991-12-09 | 1994-05-06 | Rhone Poulenc Chimie | COMPOSITION BASED ON CERIC OXIDE, PREPARATION AND USE. |
| FR2714370B1 (en) | 1993-12-24 | 1996-03-08 | Rhone Poulenc Chimie | Precursor of a composition and composition based on a mixed oxide of cerium and zirconium, method of preparation and use. |
| JP3278532B2 (en) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | Method for manufacturing semiconductor device |
| AU1670597A (en) | 1996-02-07 | 1997-08-28 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates |
| JPH09270402A (en) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | Cerium oxide abrasive and substrate manufacturing method |
| CN1245471C (en) | 1996-09-30 | 2006-03-15 | 日立化成工业株式会社 | Cerium oxide abrasive and method of polishing substrates |
| JPH10154672A (en) | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | Cerium oxide abrasive material and polishing method of substrate |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| JPH10106994A (en) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | Cerium oxide abrasive agent and polishing method of substrate |
| AU6116098A (en) | 1997-03-03 | 1998-09-22 | Nissan Chemical Industries Ltd. | Process for producing composite sols, coating composition, and optical member |
| JP2000160138A (en) | 1998-12-01 | 2000-06-13 | Fujimi Inc | Grinding composition |
| JP3992402B2 (en) | 1999-05-25 | 2007-10-17 | 株式会社コーセー | Ultraviolet screening agent comprising metal oxide solid solution cerium oxide, resin composition and cosmetic containing the same |
| US6440856B1 (en) | 1999-09-14 | 2002-08-27 | Jsr Corporation | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
| JP2002241739A (en) | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | Polishing agent and method for polishing substrate |
| CN1746255B (en) | 2001-02-20 | 2010-11-10 | 日立化成工业株式会社 | Polishing compound and method for polishing substrate |
| JP2002329688A (en) | 2001-02-28 | 2002-11-15 | Kyoeisha Chem Co Ltd | Polishing suspension containing moisture holding agent |
| JP4231632B2 (en) | 2001-04-27 | 2009-03-04 | 花王株式会社 | Polishing liquid composition |
| KR100704690B1 (en) | 2001-10-31 | 2007-04-10 | 히다치 가세고교 가부시끼가이샤 | Polishing solution and polishing method |
| JP4083502B2 (en) | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | Polishing method and polishing composition used therefor |
| JP3782771B2 (en) | 2002-11-06 | 2006-06-07 | ユシロ化学工業株式会社 | Abrasive grain and method for producing abrasive |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| JPWO2004061925A1 (en) | 2002-12-31 | 2006-05-18 | 株式会社Sumco | Slurry composition for chemical mechanical polishing, method for planarizing surface of semiconductor device using the same, and method for controlling selection ratio of slurry composition |
| CN100373556C (en) | 2003-05-28 | 2008-03-05 | 日立化成工业株式会社 | Polishing agent and polishing method |
| CN1221146C (en) | 2003-07-07 | 2005-09-28 | 华为技术有限公司 | A method for using a distribution frame for enabling broadband services on narrowband services |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| CN101885959B (en) | 2003-09-12 | 2012-06-13 | 日立化成工业株式会社 | Cerium grinding agent |
| US20050056810A1 (en) | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
| ATE463838T1 (en) | 2003-09-30 | 2010-04-15 | Fujimi Inc | POLISHING COMPOSITION AND POLISHING METHOD |
| US7563383B2 (en) | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
| JP5013671B2 (en) | 2004-12-28 | 2012-08-29 | 日揮触媒化成株式会社 | Method for producing metal oxide sol and metal oxide sol |
| JP2006249129A (en) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | Method for producing polishing agent and polishing agent |
| US20060278614A1 (en) | 2005-06-08 | 2006-12-14 | Cabot Microelectronics Corporation | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| KR20070041330A (en) | 2005-10-14 | 2007-04-18 | 가오가부시끼가이샤 | Polishing liquid composition for semiconductor substrate |
| US20070175104A1 (en) | 2005-11-11 | 2007-08-02 | Hitachi Chemical Co., Ltd. | Polishing slurry for silicon oxide, additive liquid and polishing method |
| JP4243307B2 (en) | 2006-04-14 | 2009-03-25 | 昭和電工株式会社 | Glass substrate processing method and glass substrate processing rinse agent composition |
| SG136886A1 (en) | 2006-04-28 | 2007-11-29 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk, and magnetic disk |
| JP2008091524A (en) | 2006-09-29 | 2008-04-17 | Fujifilm Corp | Polishing liquid for metal |
| JP2008112990A (en) | 2006-10-04 | 2008-05-15 | Hitachi Chem Co Ltd | Polishing agent and method for polishing substrate |
| FR2906800B1 (en) * | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | LIQUID SUSPENSION AND POWDER OF CERIUM OXIDE PARTICLES, PROCESSES FOR PREPARING THE SAME, AND USE IN POLISHING |
| CN102690607B (en) | 2007-02-27 | 2015-02-11 | 日立化成株式会社 | Metal polishing slurry and application thereof |
| JP5281758B2 (en) * | 2007-05-24 | 2013-09-04 | ユシロ化学工業株式会社 | Polishing composition |
| JP4294710B2 (en) | 2007-09-13 | 2009-07-15 | 三井金属鉱業株式会社 | Cerium oxide and method for producing the same |
| JP2009099819A (en) | 2007-10-18 | 2009-05-07 | Daicel Chem Ind Ltd | Polishing composition for CMP and device wafer manufacturing method using the polishing composition for CMP |
| JP5444625B2 (en) | 2008-03-05 | 2014-03-19 | 日立化成株式会社 | CMP polishing liquid, substrate polishing method, and electronic component |
| CN105368397B (en) | 2008-04-23 | 2017-11-03 | 日立化成株式会社 | Grinding agent, grinding agent component and the substrate Ginding process using the grinding agent |
| JP5287174B2 (en) | 2008-04-30 | 2013-09-11 | 日立化成株式会社 | Abrasive and polishing method |
| US8383003B2 (en) | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
| JP5403957B2 (en) | 2008-07-01 | 2014-01-29 | 花王株式会社 | Polishing liquid composition |
| US20100107509A1 (en) | 2008-11-04 | 2010-05-06 | Guiselin Olivier L | Coated abrasive article for polishing or lapping applications and system and method for producing the same. |
| JP5499556B2 (en) | 2008-11-11 | 2014-05-21 | 日立化成株式会社 | Slurry and polishing liquid set, and substrate polishing method and substrate using CMP polishing liquid obtained therefrom |
| JP2010153782A (en) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | Polishing method for substrate |
| JP2010153781A (en) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | Polishing method for substrate |
| KR101268615B1 (en) | 2008-12-11 | 2013-06-04 | 히타치가세이가부시끼가이샤 | Polishing solution for cmp and polishing method using the polishing solution |
| JP5355099B2 (en) | 2009-01-08 | 2013-11-27 | ニッタ・ハース株式会社 | Polishing composition |
| JP5418590B2 (en) | 2009-06-09 | 2014-02-19 | 日立化成株式会社 | Abrasive, abrasive set and substrate polishing method |
| JP2011171689A (en) | 2009-07-07 | 2011-09-01 | Kao Corp | Polishing liquid composition for silicon wafer |
| JP5781287B2 (en) | 2009-10-01 | 2015-09-16 | ニッタ・ハース株式会社 | Polishing composition |
| WO2011048889A1 (en) | 2009-10-22 | 2011-04-28 | 日立化成工業株式会社 | Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate |
| JP2011142284A (en) | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| TWI472601B (en) | 2009-12-31 | 2015-02-11 | Cheil Ind Inc | Chemical mechanical polishing slurry compositions and polishing method using the same |
| KR20130136593A (en) * | 2010-03-12 | 2013-12-12 | 히타치가세이가부시끼가이샤 | Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same |
| JP5648567B2 (en) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Polishing liquid for CMP and polishing method using the same |
| CN103497733B (en) * | 2010-11-22 | 2016-11-23 | 日立化成株式会社 | The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of substrate and substrate |
| US9881801B2 (en) | 2010-11-22 | 2018-01-30 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
| KR101243331B1 (en) | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same |
| CN102408836A (en) | 2011-10-20 | 2012-04-11 | 天津理工大学 | A kind of nano-polishing liquid for chemical mechanical planarization of titanium oxide thin film and its application |
| WO2013125445A1 (en) | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | Abrasive, abrasive set, and method for abrading substrate |
| KR102034330B1 (en) | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| KR102034328B1 (en) | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| JP5943074B2 (en) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid and polishing method for substrate |
| US9932497B2 (en) | 2012-05-22 | 2018-04-03 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| CN105453235B (en) | 2013-08-30 | 2018-04-13 | 日立化成株式会社 | Slurry, polishing liquid set, polishing liquid, grinding method of substrate and substrate |
| US10752807B2 (en) | 2013-09-10 | 2020-08-25 | Hitachi Chemical Company, Ltd | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
-
2013
- 2013-03-26 JP JP2014516708A patent/JP5943074B2/en active Active
- 2013-03-26 US US14/401,246 patent/US10557059B2/en active Active
- 2013-03-26 WO PCT/JP2013/058831 patent/WO2013175859A1/en not_active Ceased
- 2013-03-26 KR KR1020147034780A patent/KR102034329B1/en active Active
- 2013-03-26 CN CN201380026398.XA patent/CN104321852B/en active Active
- 2013-03-26 SG SG11201407086TA patent/SG11201407086TA/en unknown
- 2013-04-11 TW TW102112789A patent/TWI576418B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102034329B1 (en) | 2019-10-18 |
| US20150098887A1 (en) | 2015-04-09 |
| JPWO2013175859A1 (en) | 2016-01-12 |
| TWI576418B (en) | 2017-04-01 |
| JP5943074B2 (en) | 2016-06-29 |
| CN104321852A (en) | 2015-01-28 |
| US10557059B2 (en) | 2020-02-11 |
| TW201348420A (en) | 2013-12-01 |
| WO2013175859A1 (en) | 2013-11-28 |
| CN104321852B (en) | 2016-12-28 |
| KR20150014958A (en) | 2015-02-09 |
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