SG116475A1 - Bonded soi wafer with <100> device layer and <110>substrate for performance improvement. - Google Patents

Bonded soi wafer with <100> device layer and <110>substrate for performance improvement.

Info

Publication number: SG116475A1
Authority: SG; Singapore
Prior art keywords: substrate; device layer; soi wafer; performance improvement; bonded soi
Prior art date: 2002-02-05

Application number

SG200300325A

Inventor

Chen Haur-Ywh

Chan Yi-Ling

Yang Kuo-Nan

Yang Fu-Liang

Hu Chen-Ming

Original Assignee

Taiwan Semiconductor Mfg

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-02-05

Filing date

2003-02-05

Publication date

2005-11-28

2002-02-05 Priority claimed from TW91102030A external-priority patent/TW543150B/en

2003-01-31 Priority claimed from US10/355,872 external-priority patent/US6784071B2/en

2003-02-05 Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg

2005-11-28 Publication of SG116475A1 publication Critical patent/SG116475A1/en

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
TW91102030A TW543150B (en)	2002-02-05	2002-02-05	Structure of bonded wafer
US10/355,872 US6784071B2 (en)	2003-01-31	2003-01-31	Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement

Publications (1)

Publication Number	Publication Date
SG116475A1 true SG116475A1 (en)	2005-11-28

Family

ID=35542878

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SG200300325A SG116475A1 (en)	2002-02-05	2003-02-05	Bonded soi wafer with <100> device layer and <110>substrate for performance improvement.

Country Status (1)

Country	Link
SG (1)	SG116475A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5869386A (en) *	1995-09-28	1999-02-09	Nec Corporation	Method of fabricating a composite silicon-on-insulator substrate
US6159824A (en) *	1997-05-12	2000-12-12	Silicon Genesis Corporation	Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6271101B1 (en) *	1998-07-29	2001-08-07	Semiconductor Energy Laboratory Co., Ltd.	Process for production of SOI substrate and process for production of semiconductor device

2003
- 2003-02-05 SG SG200300325A patent/SG116475A1/en unknown

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5869386A (en) *	1995-09-28	1999-02-09	Nec Corporation	Method of fabricating a composite silicon-on-insulator substrate
US6159824A (en) *	1997-05-12	2000-12-12	Silicon Genesis Corporation	Silicon-on-silicon wafer bonding process using a thin film blister-separation method
US6271101B1 (en) *	1998-07-29	2001-08-07	Semiconductor Energy Laboratory Co., Ltd.	Process for production of SOI substrate and process for production of semiconductor device

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