SG10201910772PA - Hydrogenated isotopically enriched boron trifluoride dopant source gas composition - Google Patents
Hydrogenated isotopically enriched boron trifluoride dopant source gas compositionInfo
- Publication number
- SG10201910772PA SG10201910772PA SG10201910772PA SG10201910772PA SG10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA
- Authority
- SG
- Singapore
- Prior art keywords
- source gas
- boron trifluoride
- gas composition
- dopant source
- isotopically enriched
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/06—Boron halogen compounds
- C01B35/061—Halides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662314241P | 2016-03-28 | 2016-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201910772PA true SG10201910772PA (en) | 2020-01-30 |
Family
ID=58668943
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810163VA SG11201810163VA (en) | 2016-03-28 | 2017-03-27 | Hydrogenated isotopically enriched boron trifluoride dopant source gas composition |
| SG10201910772PA SG10201910772PA (en) | 2016-03-28 | 2017-03-27 | Hydrogenated isotopically enriched boron trifluoride dopant source gas composition |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810163VA SG11201810163VA (en) | 2016-03-28 | 2017-03-27 | Hydrogenated isotopically enriched boron trifluoride dopant source gas composition |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10920087B2 (en) |
| EP (1) | EP3436404B1 (en) |
| KR (1) | KR102194518B1 (en) |
| CN (1) | CN109195910B (en) |
| SG (2) | SG11201810163VA (en) |
| TW (1) | TWI636013B (en) |
| WO (1) | WO2017172618A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170141265A (en) * | 2015-05-12 | 2017-12-22 | 엔테그리스, 아이엔씨. | Valve assembly and fluid storage and dispensing package including the same |
| KR102623884B1 (en) * | 2018-12-15 | 2024-01-10 | 엔테그리스, 아이엔씨. | Fluoride ion implantation system and method of use using non-tungsten materials |
| KR102220239B1 (en) | 2019-05-13 | 2021-02-25 | 주식회사 에프알디 | Boron trifluoride yielding apparatus |
| KR102330961B1 (en) | 2019-11-29 | 2021-11-25 | 주식회사 에프알디 | High purity boron trifluoride manufacturing apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6343476B1 (en) | 1998-04-28 | 2002-02-05 | Advanced Technology Materials, Inc. | Gas storage and dispensing system comprising regulator interiorly disposed in fluid containment vessel and adjustable in situ therein |
| US6101816A (en) | 1998-04-28 | 2000-08-15 | Advanced Technology Materials, Inc. | Fluid storage and dispensing system |
| CA2460928A1 (en) | 2001-09-18 | 2003-03-27 | Eidgenossische Technische Hochschule Zurich | Methods and apparatus for coating surfaces |
| US7033879B2 (en) | 2004-04-29 | 2006-04-25 | Texas Instruments Incorporated | Semiconductor device having optimized shallow junction geometries and method for fabrication thereof |
| KR101297917B1 (en) | 2005-08-30 | 2013-08-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
| GB0901857D0 (en) | 2009-02-05 | 2009-03-11 | Nanoco Technologies Ltd | Encapsulated nanoparticles |
| US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8138071B2 (en) * | 2009-10-27 | 2012-03-20 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| US8598022B2 (en) * | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| TWI585042B (en) * | 2010-02-26 | 2017-06-01 | 恩特葛瑞斯股份有限公司 | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
| US9984855B2 (en) * | 2010-11-17 | 2018-05-29 | Axcelis Technologies, Inc. | Implementation of co-gases for germanium and boron ion implants |
| TWI592461B (en) | 2011-09-23 | 2017-07-21 | 納諾柯技術有限公司 | Semiconductor nanoparticle-based light emitting materials |
| US20130243874A1 (en) | 2012-03-06 | 2013-09-19 | Imra Of America, Inc. | Nanoparticles coated with amphiphilic block copolymers |
| SG11201509425QA (en) * | 2013-05-17 | 2015-12-30 | Entegris Inc | Preparation of high pressure bf3/h2 mixtures |
| US9524849B2 (en) * | 2013-07-18 | 2016-12-20 | Varian Semiconductor Equipment Associates, Inc. | Method of improving ion beam quality in an implant system |
| US9570271B2 (en) * | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
-
2017
- 2017-03-27 SG SG11201810163VA patent/SG11201810163VA/en unknown
- 2017-03-27 WO PCT/US2017/024312 patent/WO2017172618A1/en not_active Ceased
- 2017-03-27 SG SG10201910772PA patent/SG10201910772PA/en unknown
- 2017-03-27 CN CN201780033136.4A patent/CN109195910B/en active Active
- 2017-03-27 EP EP17721225.5A patent/EP3436404B1/en active Active
- 2017-03-27 US US16/098,728 patent/US10920087B2/en active Active
- 2017-03-27 KR KR1020187031266A patent/KR102194518B1/en active Active
- 2017-03-28 TW TW106110395A patent/TWI636013B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201810163VA (en) | 2018-12-28 |
| CN109195910B (en) | 2022-05-24 |
| WO2017172618A1 (en) | 2017-10-05 |
| EP3436404B1 (en) | 2020-08-26 |
| KR102194518B1 (en) | 2020-12-23 |
| EP3436404A1 (en) | 2019-02-06 |
| CN109195910A (en) | 2019-01-11 |
| US10920087B2 (en) | 2021-02-16 |
| KR20180134932A (en) | 2018-12-19 |
| TW201805240A (en) | 2018-02-16 |
| US20190136069A1 (en) | 2019-05-09 |
| TWI636013B (en) | 2018-09-21 |
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