[go: up one dir, main page]

SG10201910772PA - Hydrogenated isotopically enriched boron trifluoride dopant source gas composition - Google Patents

Hydrogenated isotopically enriched boron trifluoride dopant source gas composition

Info

Publication number
SG10201910772PA
SG10201910772PA SG10201910772PA SG10201910772PA SG10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA SG 10201910772P A SG10201910772P A SG 10201910772PA
Authority
SG
Singapore
Prior art keywords
source gas
boron trifluoride
gas composition
dopant source
isotopically enriched
Prior art date
Application number
SG10201910772PA
Inventor
Steven Bishop
Sharad N Yedave
Oleg Bly
Joseph Sweeney
Ying Tang
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201910772PA publication Critical patent/SG10201910772PA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/06Boron halogen compounds
    • C01B35/061Halides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412Plasma immersion ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/0203Protection arrangements
    • H01J2237/0206Extinguishing, preventing or controlling unwanted discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Electron Sources, Ion Sources (AREA)
SG10201910772PA 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition SG10201910772PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201662314241P 2016-03-28 2016-03-28

Publications (1)

Publication Number Publication Date
SG10201910772PA true SG10201910772PA (en) 2020-01-30

Family

ID=58668943

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201810163VA SG11201810163VA (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition
SG10201910772PA SG10201910772PA (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201810163VA SG11201810163VA (en) 2016-03-28 2017-03-27 Hydrogenated isotopically enriched boron trifluoride dopant source gas composition

Country Status (7)

Country Link
US (1) US10920087B2 (en)
EP (1) EP3436404B1 (en)
KR (1) KR102194518B1 (en)
CN (1) CN109195910B (en)
SG (2) SG11201810163VA (en)
TW (1) TWI636013B (en)
WO (1) WO2017172618A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170141265A (en) * 2015-05-12 2017-12-22 엔테그리스, 아이엔씨. Valve assembly and fluid storage and dispensing package including the same
KR102623884B1 (en) * 2018-12-15 2024-01-10 엔테그리스, 아이엔씨. Fluoride ion implantation system and method of use using non-tungsten materials
KR102220239B1 (en) 2019-05-13 2021-02-25 주식회사 에프알디 Boron trifluoride yielding apparatus
KR102330961B1 (en) 2019-11-29 2021-11-25 주식회사 에프알디 High purity boron trifluoride manufacturing apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6343476B1 (en) 1998-04-28 2002-02-05 Advanced Technology Materials, Inc. Gas storage and dispensing system comprising regulator interiorly disposed in fluid containment vessel and adjustable in situ therein
US6101816A (en) 1998-04-28 2000-08-15 Advanced Technology Materials, Inc. Fluid storage and dispensing system
CA2460928A1 (en) 2001-09-18 2003-03-27 Eidgenossische Technische Hochschule Zurich Methods and apparatus for coating surfaces
US7033879B2 (en) 2004-04-29 2006-04-25 Texas Instruments Incorporated Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
KR101297917B1 (en) 2005-08-30 2013-08-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
GB0901857D0 (en) 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) * 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI585042B (en) * 2010-02-26 2017-06-01 恩特葛瑞斯股份有限公司 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants
TWI592461B (en) 2011-09-23 2017-07-21 納諾柯技術有限公司 Semiconductor nanoparticle-based light emitting materials
US20130243874A1 (en) 2012-03-06 2013-09-19 Imra Of America, Inc. Nanoparticles coated with amphiphilic block copolymers
SG11201509425QA (en) * 2013-05-17 2015-12-30 Entegris Inc Preparation of high pressure bf3/h2 mixtures
US9524849B2 (en) * 2013-07-18 2016-12-20 Varian Semiconductor Equipment Associates, Inc. Method of improving ion beam quality in an implant system
US9570271B2 (en) * 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

Also Published As

Publication number Publication date
SG11201810163VA (en) 2018-12-28
CN109195910B (en) 2022-05-24
WO2017172618A1 (en) 2017-10-05
EP3436404B1 (en) 2020-08-26
KR102194518B1 (en) 2020-12-23
EP3436404A1 (en) 2019-02-06
CN109195910A (en) 2019-01-11
US10920087B2 (en) 2021-02-16
KR20180134932A (en) 2018-12-19
TW201805240A (en) 2018-02-16
US20190136069A1 (en) 2019-05-09
TWI636013B (en) 2018-09-21

Similar Documents

Publication Publication Date Title
GEP20217239B (en) Pharmaceutical composition
PH12016502142B1 (en) Anti-ptk7 antibody-drug conjugates
IL253746A0 (en) Compositions and methods using same for carbon doped silicon containing films
CL2016002772A1 (en) Fast-acting insulin compositions
IL248284A0 (en) Crispr-cas-related methods, compositions and components for cancer immunotherapy
MX2015008999A (en) Mk2 inhibitors and uses thereof.
IL247469B (en) Il-15/il-15r alpha based conjugates purification methods, compositions containing products obtained thereby and uses thereof
GB201517770D0 (en) Improvements in or relating to gas bearings
MX2018000715A (en) Methods for treating cancer using apilimod.
GB201610599D0 (en) Immunogenic Composition
GEP20217240B (en) Pharmaceutical composition
GB201513020D0 (en) Radiation-curable compositions, membranes and the manufacture and use of such membranes
PH12017501864A1 (en) Compositions and methods for treating autism
MX2015008588A (en) Compositions and methods for polynucleotide transfection.
SG10201910772PA (en) Hydrogenated isotopically enriched boron trifluoride dopant source gas composition
EP3397277C0 (en) Immunogenic composition
IL254770A0 (en) Boron-containing small molecules as antiprotozoal agents
GB201614485D0 (en) Immunogenic composition
SG11201803070SA (en) Intermediate-medium-type gas vaporizer
ZA201802565B (en) New adjuvant and vaccine composition containing the same
HUE055278T2 (en) Cryogenic composition
GB201911959D0 (en) Immunogenic compositions and uses therefor
ZA201806445B (en) Antiperspirant composition
GB2544295B (en) Improvements in or relating to gas generating apparatus
UA101750U (en) Use of omega as organoprotector in toxic hepatitis