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SG10201906679RA - Chip manufacturing method - Google Patents

Chip manufacturing method

Info

Publication number
SG10201906679RA
SG10201906679RA SG10201906679RA SG10201906679RA SG10201906679RA SG 10201906679R A SG10201906679R A SG 10201906679RA SG 10201906679R A SG10201906679R A SG 10201906679RA SG 10201906679R A SG10201906679R A SG 10201906679RA SG 10201906679R A SG10201906679R A SG 10201906679RA
Authority
SG
Singapore
Prior art keywords
chip manufacturing
chip
manufacturing
Prior art date
Application number
SG10201906679RA
Inventor
Genda Satoshi
Ogawa Yuki
Odanaka Kentaro
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201906679RA publication Critical patent/SG10201906679RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201906679RA 2018-07-31 2019-07-18 Chip manufacturing method SG10201906679RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018143126A JP7072993B2 (en) 2018-07-31 2018-07-31 Chip manufacturing method

Publications (1)

Publication Number Publication Date
SG10201906679RA true SG10201906679RA (en) 2020-02-27

Family

ID=69383822

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201906679RA SG10201906679RA (en) 2018-07-31 2019-07-18 Chip manufacturing method

Country Status (5)

Country Link
JP (1) JP7072993B2 (en)
KR (1) KR102699722B1 (en)
CN (1) CN110783185B (en)
SG (1) SG10201906679RA (en)
TW (1) TWI800668B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7273756B2 (en) * 2020-03-18 2023-05-15 株式会社東芝 Semiconductor device and its manufacturing method
JP7450426B2 (en) * 2020-03-24 2024-03-15 株式会社ディスコ Processing method of workpiece
KR102405460B1 (en) 2020-06-26 2022-06-07 매그나칩 반도체 유한회사 Semiconductor Die Forming and Packaging Method Using Ultrashort pulse Laser Micromachining
KR20220167106A (en) 2021-06-11 2022-12-20 삼성전자주식회사 Semiconductor chip, and semiconductor package
CN113649709A (en) * 2021-08-16 2021-11-16 湖北三维半导体集成创新中心有限责任公司 Wafer cutting method
TWI888749B (en) * 2021-08-19 2025-07-01 大陸商合肥創發微電子有限公司 Method for manufacturing semiconductor chips

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3583279B2 (en) * 1998-01-13 2004-11-04 三菱電機株式会社 Drilling method
JP4694845B2 (en) 2005-01-05 2011-06-08 株式会社ディスコ Wafer division method
JP2011035302A (en) * 2009-08-05 2011-02-17 Renesas Electronics Corp Method of manufacturing semiconductor device
US8383984B2 (en) 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
JP2014093445A (en) * 2012-11-05 2014-05-19 Disco Abrasive Syst Ltd Processing method of optical device wafer
US9919380B2 (en) 2013-02-23 2018-03-20 Coherent, Inc. Shaping of brittle materials with controlled surface and bulk properties
JP2015020195A (en) 2013-07-19 2015-02-02 アイシン精機株式会社 Laser processing apparatus, laser processing method, and laser oscillation apparatus
JP6189700B2 (en) * 2013-10-03 2017-08-30 株式会社ディスコ Wafer processing method
JP2015138857A (en) * 2014-01-22 2015-07-30 株式会社ディスコ Wafer processing method
JP2016162809A (en) * 2015-02-27 2016-09-05 株式会社ディスコ Wafer processing method
CN104716066B (en) * 2015-03-20 2018-03-30 上海华力微电子有限公司 One kind detects the defects of figure bottom photoetching glue residua detection method
JP6587911B2 (en) 2015-11-16 2019-10-09 株式会社ディスコ Wafer division method
CN106229309B (en) * 2016-07-20 2019-05-07 日月光半导体(上海)有限公司 Package substrate and manufacturing method thereof

Also Published As

Publication number Publication date
TW202008452A (en) 2020-02-16
CN110783185B (en) 2023-10-10
TWI800668B (en) 2023-05-01
JP7072993B2 (en) 2022-05-23
KR20200014195A (en) 2020-02-10
JP2020021786A (en) 2020-02-06
CN110783185A (en) 2020-02-11
KR102699722B1 (en) 2024-08-27

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