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SG10201804042RA - Semiconductor Memory Devices - Google Patents

Semiconductor Memory Devices

Info

Publication number
SG10201804042RA
SG10201804042RA SG10201804042RA SG10201804042RA SG10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA
Authority
SG
Singapore
Prior art keywords
semiconductor memory
trench
memory devices
gate electrode
electrode portion
Prior art date
Application number
SG10201804042RA
Inventor
Kim Hui-Jung
Hee Cho Min
Kim Bong-Soo
Kim Junsoo
Yamada Satoru
Lee Wonsok
Hwang Yoosang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201804042RA publication Critical patent/SG10201804042RA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided. FIG. 1
SG10201804042RA 2017-08-10 2018-05-14 Semiconductor Memory Devices SG10201804042RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170101835A KR102358460B1 (en) 2017-08-10 2017-08-10 Semiconductor memory device and method of forming the same

Publications (1)

Publication Number Publication Date
SG10201804042RA true SG10201804042RA (en) 2019-03-28

Family

ID=65084548

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804042RA SG10201804042RA (en) 2017-08-10 2018-05-14 Semiconductor Memory Devices

Country Status (6)

Country Link
US (3) US10615164B2 (en)
JP (1) JP7323991B2 (en)
KR (1) KR102358460B1 (en)
CN (1) CN109390340B (en)
DE (1) DE102018110956B4 (en)
SG (1) SG10201804042RA (en)

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KR102686881B1 (en) * 2019-10-24 2024-07-18 삼성전자주식회사 Semiconductor device and method of manufacturing the semiconductor device
KR102768876B1 (en) * 2019-11-11 2025-02-19 삼성전자주식회사 A semiconductor device and method of manufacturing the same
CN113594237B (en) * 2020-04-30 2023-09-26 长鑫存储技术有限公司 Buried gate preparation method and semiconductor device preparation method
US11862697B2 (en) 2020-04-30 2024-01-02 Changxin Memory Technologies, Inc. Method for manufacturing buried gate and method for manufacturing semiconductor device
US11056175B1 (en) * 2020-07-28 2021-07-06 Winbond Electronics Corp. Semiconductor device and manufacturing method thereof
EP4084073A4 (en) * 2020-08-05 2023-08-30 Changxin Memory Technologies, Inc. Semiconductor structure and manufacturing method therefor
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EP4086960B1 (en) * 2021-03-18 2025-10-01 Changxin Memory Technologies, Inc. Manufacturing method for semiconductor structure, and semiconductor structure
CN115988870B (en) * 2021-10-13 2025-11-21 长鑫存储技术有限公司 Method for manufacturing semiconductor structure and structure thereof
EP4475164A4 (en) * 2022-06-22 2025-06-11 Changxin Memory Technologies, Inc. Semiconductor structure and manufacturing method therefor

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Also Published As

Publication number Publication date
US10991699B2 (en) 2021-04-27
KR102358460B1 (en) 2022-02-07
US20200219885A1 (en) 2020-07-09
KR20190018085A (en) 2019-02-21
US11785761B2 (en) 2023-10-10
JP7323991B2 (en) 2023-08-09
US10615164B2 (en) 2020-04-07
US20210249417A1 (en) 2021-08-12
US20190051652A1 (en) 2019-02-14
DE102018110956A1 (en) 2019-02-14
DE102018110956B4 (en) 2021-10-07
CN109390340B (en) 2024-03-15
CN109390340A (en) 2019-02-26
JP2019036720A (en) 2019-03-07

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